A snubber circuit is connected to the power semiconductor device to reduce the electrical stresses
Description : State any four materials used in fabrication of semiconductor device and describe its need.
Last Answer : For fabrication of semiconductor devices like transistors diode, solar cell etc. we have to make use of following types of materials 1. Substrate: o It is used for deposition of thin ... . o Metal cans and sealed glass containers satisfy the extreme requirements of space and military users.
Description : The device which allows reverse power flow and withstands highest switch frequency is (A) GTO (B) MOSFET (C) IGBT (D) Inverter grade SCR
Last Answer : The device which allows reverse power flow and withstands highest switch frequency is MOSFET
Last Answer : Categories of semiconductor components (Integrated circuit families) Integrated circuits are made from semiconductor material These are divided into three main categories A) ... minus, true or false etc. common families include Transistor Transistor Logic (TTL), CMOS, MOSFET.
Description : The Semiconductor strain gauges typically have much higher gauge factors than those of metallic strain gauges, primarily due to : (A) higher temperature sensitivity (B) higher Poisson’s ratio (C) higher piezoresitive coefficient (D) higher magnetostrictive coefficient
Last Answer : The Semiconductor strain gauges typically have much higher gauge factors than those of metallic strain gauges, primarily due to : higher piezoresitive coefficient
Description : (i) Explain the process of diffusion in semiconductor material. (ii) Explain Hall effect.
Last Answer : (i) Diffusion: In a semi conductor bar a concentration gradient exist when either number of electrons or holes is greater in one region of a semi conductor as compared to other region. When ... to determine whether a semiconductor is N type or P type, and to find carrier concentration
Description : State the impurities for obtaining p-type and n-type semiconductor from intrinsic semi conductor.
Last Answer : Crystals of Silicon and Germanium are doped using two types of dopants: 1. The impurities for obtaining n-type semiconductor from intrinsic semiconductor are pentavalent impurity; like Arsenic (As), Antimony ... semiconductor are trivalent impurity; like Indium (In), Boron (B), Aluminum (Al), etc.
Description : Which is a semiconductor: copper, silicon, or neon?
Last Answer : Copper is a metal. Silicon is a semiconductor. Neon is inert gas.
Description : Compare intrinsic and extrinsic semiconductor
Last Answer : Intrinsic semiconductor Extrinsic Semiconductor Pure form of semiconductor Impure form of semiconductor No. electrons and holes are equal No. of electrons and holes are not equal Electrical ... e.g. Ge, Si semiconductor e.g. p-type or n-type semiconductor
Description : Why is an intrinsic semiconductor doped?
Last Answer : Intrinsic semiconductor is doped in order to increase conductivity of semiconductor. Doping increases majority charge carries either electrons or holes and majority charge carriers responsible for electric current.
Description : In a single crystal of an intrinsic semiconductor, the number of free carriers at the Fermi level at room temperature is: A) Half the total number of electrons in the crystal B) Zero C) Half the number of atoms in the crystal D) Half the number of free electrons in the crystal
Last Answer : In a single crystal of an intrinsic semiconductor, the number of free carriers at the Fermi level at room temperature is: Zero
Description : At very high temperatures, extrinsic semiconductor becomes intrinsic semiconductor because (A) Of drive in diffusion of dopants & carriers. (B) Band to band transition dominates impurity ionization. (C) ... band to band transition. (D) Band to band transition is balanced by impurity ionisation.
Last Answer : At very high temperatures, extrinsic semiconductor becomes intrinsic semiconductor because Impurity ionization dominates band to band transition.
Description : What are the number of valence electrons of atoms in semiconductor?
Last Answer : There are four valence electrons in the atom of a semiconductor.
Description : what is semiconductor ?
Last Answer : For simple understanding is that the semiconductor is a partially conductor and partially insulator which depends on the temperature of conductor.
Description : Which of the following device is used for coupling microwave energy? A) Resonator B) Waveguide C) Loop D) Antenna
Last Answer : A
Description : Which of the following is a negative-resistance microwave device for oscillator applications? A) IMPATT Diode B) Gunn Diode C) Snap diode D) Schottky Diode
Last Answer : Which of the following is a negative-resistance microwave device for oscillator applications? A) IMPATT Diode B) Gunn Diode C) Snap diode D) Schottky Diode
Last Answer : No, BJT is a current controlled device .
Description : Briefly explain how the power factor of an inductive circuit can be improved.
Last Answer : As we know that power factor should be corrected to ensure that the current supplied is cost friendly. Meaning the power factor should be around one but not greater than one(0.8-0.9) in a ... an inductive circuit due to the inductive reactance which oppose the change of current in the ac circuit.
Description : State maximum power transfer theorem for DC circuit.
Last Answer : Maximum power transfer theorem for DC circuit: The maximum power transfer theorem states that the source or a network transfers maximum power to load only when the load resistance is equal ... removed (disconnected) ii) All internal independent sources are replaced by their internal resistances.
Description : List any two methods of reactive power measurement in 3 phase circuit.
Last Answer : Methods of reactive power measurement in 3 phase circuit: (i) Two single phase wattmeter method (ii) One single phase wattmeter method
Description : In a pure resistive circuit, the average power Pavg is ______ the peak power Pmax. (1) Double (2) One-half of (3) One-fourth (4) Equal to
Last Answer : In a pure resistive circuit, the average power Pavg is One-half of the peak power Pmax.
Description : The power factor of a D.C. circuit is always?
Last Answer : The power factor of a D.C. circuit is always unity.
Description : In an A.C. circuit power is dissipated in?
Last Answer : In an A.C. circuit power is dissipated in resistance only.
Description : The apparent power drawn by an A.C. circuit is 10 kVA and active power is 8 kW. The reactive power in the circuit is?
Last Answer : The apparent power drawn by an A.C. circuit is 10 kVA and active power is 8 kW. The reactive power in the circuit is 6 kVAR.
Description : The input of an A.C. circuit having power factor of 0.8 lagging is 40 kVA The power drawn by the circuit is?
Last Answer : The input of an A.C. circuit having power factor of 0.8 lagging is 40 kVA The power drawn by the circuit is 32 kW.
Description : Pure inductive circuit takes power from the A.C. line when?
Last Answer : It takes power when voltage decreases and current increases.
Description : The power factor at resonance in R-L- C parallel circuit is?
Last Answer : since a rlc circuit at resonance behaves like a pure resistive circuit, i.e there is no phase difference between current and voltage, hence the power factor is unity.
Description : Power factor of an inductive circuit is usually improved by connecting capacitor to it in?
Last Answer : Power factor of an inductive circuit is usually improved by connecting capacitor to it in parallel.
Description : Power factor of an electrical circuit is equal to?
Last Answer : Power factor of an electrical circuit is equal to R/Z, cosine of phase angle difference between current and voltage, kW/kVA.
Last Answer : Air blast circuit breakers for 400 kV power system are designed to operate in 50 millisecond.
Description : What is the power factor of purely resistive circuit.
Last Answer : Unity that is 1
Description : How do you find power in a circuit?
Last Answer : Power can be find in a circuit by the means of meters .if an individual want to check for a power in a circuit he/she Calabria the meters on a high voltage range and put the meters Lee in parallel with the circuit he /she will know the amount of power within that circuit .
Description : What is drive circuit in power electronics?
Last Answer : Driver is used for Motion Control through the use of power electronics.
Last Answer : MOSFET are voltage controlled devices.
Last Answer : BJT is current controlled device.
Description : Linear and non-linear device
Last Answer : Linear and non-linear device
Description : Why transistor is called as bipolar device.
Last Answer : BJT is called bipolar device because in BJT current conduction takes place due to majority as well as minority charge carriers that is because of electrons as well as holes.
Last Answer : Wagner earthing device is used to eliminate errors due to electrostatic coupling.
Last Answer : Basically a potentiometer is a device for comparing two voltages.
Last Answer : A damping device prevents the oscillation of the moving system and enables the latter to reach its final position quickly.
Last Answer : A switchgear is device used for switching, controlling and protecting the electrical circuit and equipment.
Description : Is FPGA a volatile device?
Last Answer : Yes, FPGA is a volatile device.
Last Answer : No, IGBT is not the current controlled device. IGBT is a voltage controlled device. IGBT have combine qualities of MOSFET and BJT. The high switching speed of MOSFET and low conduction losses of BJT. Also, IGBT which stands for Insulated Gate Bipolar Transistor have high input impedance.
Last Answer : Thyristor can only be turned on by small gate pulse but it cannot be turn off by using gate hence thyristor is called semi controlled device.
Last Answer : Thyristor can be turn on by positive gate pulse and the current will continue to flow through the device even when the gate voltage is low hence thyristor is called latching device.
Last Answer : already answered here is mosfet current controlled device?
Last Answer : Req= (1/1200 +1/560 + 1/2.1)^-1 = 2.1 ohms RT= 2.1 + 7.8 = 9.9 ohms IT = V/R = 24/9.9 = 2.4 A Veq= R I = 2.1 2 ... 7.8 = 12.096 w = 44.928 w _________________________________________ By: Ellis-Junior Kamatjipose [email protected]
Description : Spring.
Last Answer : what is now?
Description : Define Multivibrator. State the types of multivibrator. Which M/V can be used as a flip-flop? Draw the circuit diagram.
Last Answer : Definition:- A multivibrator is an electronic circuit that switches rapidly by means of positive feedback between two or more states. OR A multivibrator is an electronic circuit used to implement a ... Bistable Multivibrator: it can operate as a flip-flop, Circuit diagram
Description : Define Sample and hold period with reference to S/H circuit.
Last Answer : Sample Period:- The time period during which the voltage across the capacitor is equal to the input voltage is called sample period. Hold Period:- The time period during which the voltage across the capacitor is constant is called hold period.
Description : An AC supply of 230 V is applied to a half-wave rectifier circuit through a transformer having primary to secondary turn’s ratio 12:1. The peak inverse voltage is A) 8.62 V B) 12 V C) 19.17 V D) 27.11 V
Last Answer : An AC supply of 230 V is applied to a half-wave rectifier circuit through a transformer having primary to secondary turn’s ratio 12:1. The peak inverse voltage is A) 8.62 V B) 12 V C) 19.17 V D) 27.11 V