At very high temperatures, extrinsic semiconductor becomes intrinsic semiconductor because
(A) Of drive in diffusion of dopants & carriers.
(B) Band to band transition dominates impurity ionization.
(C) Impurity ionization dominates band to band transition.
(D) Band to band transition is balanced by impurity ionisation.
(A) Of drive in diffusion of dopants & carriers.
(B) Band to band transition dominates impurity ionization.
(C) Impurity ionization dominates band to band transition.
(D) Band to band transition is balanced by impurity ionisation.