The threshold voltage of an n- channel enhancement mode MOSFET is 0.5V when the device is biased at a gate voltage of 3V. Pinch off would be occurs at a drain voltage of

(A) 1.5V (B) 2.5V (C) 3.5V (D) 4.5V

1 Answer

Answer :

The threshold voltage of an n- channel enhancement mode MOSFET is 0.5V when the device is biased at a gate voltage of 3V. Pinch off would be occurs at a drain voltage of 2.5V

Related questions

Description : Describe the operation of N channel enhancement type MOSFET with diagram.

Last Answer : As its name indicates, this MOSFET operates only in the enhancement mode and has no depletion mode. It operates with large positive gate voltage only. It does not conduct when the ... of charge carriers attracted to the positive gate. Thus drain current is controlled by the gate potential.

Description : Explain difference between enhancement MOSFET and depletion type MOSFET.

Last Answer : In enhancement MOSFET channel is not initially exists but in depletion MOSFET channel is already exists. In case of depletion MOSFET if the voltage is applied between drain and source the drain current will flow ... a channel. depletion MOSFET & enhancement MOSFET

Description : What is enhancement MOSFET?...............

Last Answer : Enhancement MOSFET: There are two types of MOSFET one is enhancement MOSFET and second is depletion MOSFET. In enhancement MOSFET channel is created by applying threshold voltage between gate and source ... mode. The enhancement MOSFET will not conduct if the gate to source voltage is zero.

Description : What is channel length modulation in MOSFET?

Last Answer : Shortening of lenght of the inverted channel region with increase in drain bias for large drain biases due to which current increases with drain bias and output resistance decreases is called channel length modulation in MOSFET.

Last Answer : already answered here is mosfet current controlled device?

Description : What is the threshold voltage?

Last Answer : 440

Description : Justify. Power MOSFET is operated at high enough gate source voltage to minimize the conduction losses. 

Last Answer : MOSFET is metal oxide field effect transistor. MOSFET is a voltage controlled device. MOSFET is majority carrier device. MOSFET are of two one is n-channel MOSFET and p-channel MOSFET. Gate, ... . Hence, power MOSFET is operated at high enough gate-source voltage to minimize the conduction losses.

Description : A 3-phase voltage source inverter operates in 180° conduction mode with a star connected resistive load. If input dc voltage is 100 V, then the peak to peak output line voltage is :

Last Answer : A 3-phase voltage source inverter operates in 180° conduction mode with a star connected resistive load. If input dc voltage is 100 V, then the peak to peak output line voltage is : 200 V

Last Answer : No, MOSFET is not the curent controlled device. The current between drain and source which is drain current is controlled by applying a voltage between gate and source hence MOSFET is a voltage controlled device. 

Description : When does the Body bias effect occur in an n-channel MOSFET?  A) When the Source voltage is less the Bulk voltage B) When the Source voltage is equal to or greater the Bulk voltage C) When the Drain voltage is equal to the Bulk voltage D) When the Gate voltage is equal to the Bulk Voltage 

Last Answer : When does the Body bias effect occur in an n-channel MOSFET?  A) When the Source voltage is less the Bulk voltage B) When the Source voltage is equal to or greater the Bulk voltage C) ... voltage is equal to the Bulk voltage D) When the Gate voltage is equal to the Bulk Voltage 

Description : Describe with neat sketch the construction and working principle of MOSFET.

Last Answer : Construction and working principle of MOSFET:  A) Depletion type MOSFET: Construction: The N-channel depletion type MOSFET is formed on P-type silicon substrate with two heavily ... accumulation of electrons and hence more current. Thus the MOSFET is a gate voltage controlled device.

Description : State the applications of MOSFET

Last Answer : Applications of MOSFET: i) Switching-mode-power-supplies (SMPS) and linear power supplies. ii) Brushless DC motor drives iii) Solid state DC relay iv) Automobile applications v) Stepper motor controller vi) Lighting controls vii) Solenoid drivers viii) Robotics ix) Induction heating

Description : Which phenomenon is present in thyristors but absent in BJT, MOSFET and IGBT ? (A) forward conduction (B) latching (C) forward blocking (D) reverse breakdown

Last Answer : Which phenomenon is present in thyristors but absent in BJT, MOSFET and IGBT ? (A) forward conduction (B) latching (C) forward blocking (D) reverse breakdown

Description : Explain MOSFET gate drive circuit and totem pole configuration.

Last Answer : MOSFET gate drive circuit: The turning on and turning off of MOSFET can be controlled from gate to source voltage signal. If the gate to source voltage of MOSFET exceeds threshold ... this configuration, the two switches (transistors) are used in totem pole arrangement with a comparator.

Description : Explain the formation of parasitic BJT and parasitic diode in Power MOSFET. Can parasitic diode be used in same power electronics applications?

Last Answer : Parasitic Diode: The parasitic diode is in between drain and source. The MOSFET structure itself contains parasitic diode or body drain diode. This parasitic diode allows the reverse flow of current when the ... of MOSFET as a BJT collector. Parasitic BJT operates in the cut-off region.

Description : Operating frequency of power MOSFET is higher than that of power BJT. Justify the statement.

Last Answer : Power MOSFET have high turning on and turning off capability high switching speed of MOSFET is due to the high rate of change of drain voltage. The switching losses of power MOSFET ... lower frequency. Hence, operating frequency of power MOSFET is higher than that of power BJT.

Description : Justify the statement. Antiparallel diode is connected across MOSFET.

Last Answer : In MOSFET current is flow from drain to source but when the load is inductive the current may flow in opposite direction. To avoid the opposite flow of current and to protect MOSFET the antiparallel diode is connected across MOSFET.

Description : parallel operation of MOSFET can be done more easily as compared to thyristor. why?

Last Answer : Parallel operation of MOSFET can be done more easily as compared to thyristor because the resistance of MOSFET is increases with increase in temperature. MOSFET have the positive temperature coefficient. In ... the parallel operation of MOSFET can be done more easily as compared to the thyristor.

Description : Compare BJT, MOSFET and IGBT .

Last Answer : BJT MOSFET IGBT BJT is a current controlled device. MOSFET is a voltage controlled device. IGBT is a voltage controlled device. The input impedance of BJT is low. ... is minority carrier device. MOSFET is majority carrier device. IGBT is minority carrier device.

Description : Explain the series and parallel operation of MOSFET. Which is suitable and why?

Last Answer : Series operation of MOSFET: To increase voltage handling capability MOSFETs are connected in series. When the MOSFETs are connected in series each MOSFET should turn on and turn off ... on and turn off time and transconductance. Each MOSFET should share current equally.  

Last Answer : Because it has a higher switching frequency and heat tolerance.

Description : What is depletion type MOSFET?..........

Last Answer : Depletion MOSFET: Depletion MOSFET is a MOSFET in which the channel already exists. If we apply a voltage between drain and source then the drain current will flow even if the gate to source ... in figure. The drain current will be reduced as the gate to source voltage made more negative.

Last Answer : ON state losses of IGBT is less as compared to MOSFET and BJT.

Last Answer : MOSFET provides better efficiency at high frequency and its high speed switching losses are less hence MOSFET is used for high frequency.

Description : What are the disadvantages of the linear regulator? how are they overcome in the switching regulator? What is continuous and discontinuous mode switching regulator?

Last Answer : Disadvantages of the linear regulator: Linear regulator waste power in the form of heat. Linear regulator has very low efficiency. Linear regulator cannot be used for the step ... between continuous mode and discontinuous mode switching regulator.

Last Answer : MOSFET  are voltage controlled devices.

Description : Mention The Steps In The Interrupt Driven Mode Of Data Transfer.?

Last Answer : Answer :The steps followed in this type of transfer are as follows: The peripheral device would request for an interrupt. The request acknowledgement for the transfer is issued at the end of ... coordinates by the ISS. Again the Interrupt system is enabled and the above steps are repeated.

Description : Compare characteristics of asynchronous and synchronous transmission mode (four points). 

Last Answer : Synchronous transmission Asynchronous transmission 1. Synchronous transmission are synchronized by an external clock. 1. Asynchronous transmission are synchronized by special signals along the transmission ... for transferring a small amount of data as it is simple and economical.

Description : Describe the basic SHA operation with the help of its four mode specifications.

Last Answer : Sample-and-hold amplifier (SHA) is a unity gain amplifier with a mode control switch where the input of the amplifier is connected to a time-varying signal. A trigger pulse at the mode control switch ... but other forms, such as optical and mechanical forms, are possible. Also denoted S/H.

Description : Describe IS – 95 forward link channel structure.

Last Answer : The IS-95 forward Channel structure consists of four types of logical Channels - pilot Channel, synchronization Channel, paging Channel, and forward traffic Channels. Each forward carrier Channel contains one ... . This code is known as the channel identifier. This code is different for each user

Description : Define the following terms : (i) Base Station (ii) Control Channel (iii) Mobile Station (iv) Page 

Last Answer : i) Base Station: - A fixed station in a mobile radio system used for radio communication with mobile stations. Base stations are located at the center or on the edge of a coverage region ... the page throughout the service area using base stations which broadcast the page on a radio carrier.

Description : Explain estimation of channel capacitance of CMOS.

Last Answer : Capacitance estimation: The dynamic response i.e. switching speed of MOS system depends on capacitance associated with the MOS devices which are formed by different layers in MOS transistors ... are due to three dimensional, distributed charge voltage relations within the device structure. 

Description : What is the channel capacity of a noisy channel with conditional probability of error p = 1/2? A) 0 B) 1 C) Infinity D) 2  

Last Answer : What is the channel capacity of a noisy channel with conditional probability of error p = 1/2?  A) 0 B) 1 C) Infinity D) 2  

Description : As per Shannon’s channel capacity theorem, if samples are transmitted in ‘T’ seconds over a noisy channel which is bandlimited to ‘B’ Hz. The number of samples ‘n’ is given by (symbols/notations carry their usual meaning) A) B/T B) T/B C) 2BT D) BT/2 

Last Answer : As per Shannon’s channel capacity theorem, if samples are transmitted in ‘T’ seconds over a noisy channel which is bandlimited to ‘B’ Hz. The number of samples ‘n’ is given by ( ... /notations carry their usual meaning) A) B/T B) T/B C) 2BT D) BT/2 

Description : The transit time of the current carriers through the channel of a JFET decides it's?

Last Answer : The transit time of the current carriers through the channel of a JFET decides it's gate characteristics.

Description : Assume that the n-channel MOSFET shown in figure is ideal and that its threshold voltage is +1 .0 V. The voltage Vab between nodes a and b is A)5V B)2V C)1V D)0V

Last Answer : Assume that the n-channel MOSFET shown in figure is ideal and that its threshold voltage is +1 .0 V. The voltage Vab between nodes a and b is 0V

Description : State advantages of MOSFET.

Last Answer : Advantages of MOSFET * MOSFETs provide greater efficiency while operating at lower voltages. * Absence of gate current results in high input impedance. * High switching speed. * They operate at lower ... due to lower resistance of channel. * They are easy to manufacture. * They are portable.

Description : Compare JFET with MOSFET.

Last Answer : Particulars JFET MOSFET 1) Type Voltage controlled device Voltage controlled device 2) Mode of operation Operates only in depletion mode Operates in depletion and enhancement ... 6) Gate connection Not isolated from substrate Isolated by SiO2 layer from substrate

Description : A certain power MOSFET has a maximum junction temperature specification of 1500o C, a junction-to-case thermal resistance of 1.00 C/W, and a junction-to ambient thermal resistance of 600 C/W. If the ambient temperature is 300o C ... the device will be A) 1.52 W B) 1.72 W C) 1.92W D) 2.00 W

Last Answer : A certain power MOSFET has a maximum junction temperature specification of 1500o C, a junction-to-case thermal resistance of 1.00 C/W, and a junction-to ambient thermal resistance of  ... 300o C, then the maximum allowable power dissipation in the device will be 2.00 W 

Description : A MOSFET has how many terminals?

Last Answer : A MOSFET having three terminals 1st one is Gate (insulated), 2nd one is Source and 3rd one is Drain.

Description : Why Mosfet is called Mosfet?

Last Answer : Why Mosfet is called Mosfet?

Description : In MOSFET, the polarity of the inversion layers is the same as that of?

Last Answer : In MOSFET, the polarity of the inversion layers is the same as that of majority carriers in the source.

Description : MOSFET uses the electric field of?

Last Answer : MOSFET uses the electric field of gate capacitance.

Description : Is the input impedance of MOSFET more than BJT and FET?

Last Answer : Yes, the input impedance of MOSFET more than BJT and FET.

Last Answer : Yes IGBT is costlier than BJT and MOSFET.

Last Answer : No MOSFET do not have a second breakdown problem.

Last Answer : MOSFETs are of two types namely  1) enhancement type MOSFET  or  E-MOSFET 2) depletion type MOSFET  or  D-MOSFET

Last Answer : MOSFET have high current losses due to High on state resistance. Hence MOSFET is used for low power applications.

Last Answer : Because of positive temperature coefficient of mosfet the paralleling of mosfet is easier.

Last Answer : Yes MOSFET can operate at very high frequency.