n-type semiconductor can be made by adding ____ to intrinsic semiconductor

n-type semiconductor can be made by adding ____ to intrinsic semiconductor

(A) Boron (B) Arsenic

(C) Carbon (D) Germanium
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n-type semiconductor can be made by adding Arsenic to intrinsic semiconductor

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Related questions

n-type semiconductor is an example of (A) extrinsic semiconductor. (B) intrinsic semiconductor. (C) super conductor. (D) insulators..

Description : n-type semiconductor is an example of (A) extrinsic semiconductor. (B) intrinsic semiconductor. (C) super conductor. (D) insulators..

Last Answer : (A) extrinsic semiconductor.

State the impurities for obtaining p-type and n-type semiconductor from intrinsic semi conductor.

Description : State the impurities for obtaining p-type and n-type semiconductor from intrinsic semi conductor. 

Last Answer : Crystals of Silicon and Germanium are doped using two types of dopants:  1. The impurities for obtaining n-type semiconductor from intrinsic semiconductor are pentavalent impurity; like Arsenic (As), Antimony ... semiconductor are trivalent impurity; like Indium (In), Boron (B), Aluminum (Al), etc.

It is the made from semiconductor material such as aluminum-galium-arsenide or gallium-arsenide-phosphide. A. APD B. Injection laser diode C. Light emitting diode D. Positive-intrinsic-negative

Description : It is the made from semiconductor material such as aluminum-galium-arsenide or gallium-arsenide-phosphide. A. APD B. Injection laser diode C. Light emitting diode D. Positive-intrinsic-negative

Last Answer : C. Light emitting diode

What is the effect of temperature on an intrinsic semiconductor?

Description : What is the effect of temperature on an intrinsic semiconductor?

Last Answer : An intrinsic semiconductor is basically a pure semiconductor, though some might argue that a small amount of doping can still yield an intrinsic semiconductor. In the crystal structure of ... semiconductor has a positive temperature coefficient. More heat, more conduction under the same conditions.

When Arsenic atoms are added Germanium lattice, it becomes a/an - (1) Insulator (2) Superconductor (3) Intrinsic semiconductor (4) Extrinsic semiconductor

Description : When Arsenic atoms are added Germanium lattice, it becomes a/an - (1) Insulator (2) Superconductor (3) Intrinsic semiconductor (4) Extrinsic semiconductor

Last Answer : (4) Extrinsic semiconductor Explanation: When a peritavalent (donor) impurity, like arsenic, is added to germanium, it will form covalent bonds with thegermanium atoms, leaving 1 electron relatively ... this manner - either with Nor P-type impurities - are referred to as EXTRINSIC semiconductors.

Which of the listed conditions describes the effect on intrinsic semiconductor operation as a result of a temperature increase? A. Additional heat sinks will be required B. Conductivity will increase C. Conductivity will decrease D. Resistivity will increase

Description : Which of the listed conditions describes the effect on intrinsic semiconductor operation as a result of a temperature increase? A. Additional heat sinks will be required B. Conductivity will increase C. Conductivity will decrease D. Resistivity will increase

Last Answer : Answer: B

Differentiate between intrinsic and extrinsic semiconductor

Description : Differentiate between intrinsic and extrinsic semiconductor

Last Answer : Pure form of semiconductors are said to be intrinsic semiconductor. Ex: germanium, silicon. It has poor conductivity If certain amount of impurity atom is added to intrinsic semiconductor the resulting semiconductor is Extrinsic or impure Semiconductor It has good conductivity.

What is an intrinsic semiconductor or pure semiconductor?

Description : What is an intrinsic semiconductor or pure semiconductor?

Last Answer : A semiconductor in which the number of holes and electrons are equal is called intrinsic orpure semiconductor.

A doped semiconductor is called : a) Extrinsic b) Intrinsic c) Insulator d) Conductor

Description : A doped semiconductor is called : a) Extrinsic b) Intrinsic c) Insulator d) Conductor

Last Answer : b) Intrinsic

C and Si both have same lattice structure, having 4 bonding electrons in each. However, C is insulator where as Si is intrinsic semiconductor. This is because (1) The four bonding electrons in the case of C lie in the third orbit, whereas for Si they lie in the fourth orbit (2) In case of C the valance band is not completely filled at absolute zero temperature (3) In case of C the conduction band is partly filled even at absolute zero temperature (4) The four bonding electrons in the case of C lie in the second orbit, whereas in the case of Si they lie in the third

Description : C and Si both have same lattice structure, having 4 bonding electrons in each. However, C is insulator where as Si is intrinsic semiconductor. This is because (1) The four bonding electrons in the case of C ... the case of C lie in the second orbit, whereas in the case of Si they lie in the third

Last Answer : (4) The four bonding electrons in the case of C lie in the second orbit, whereas in the case of Si they lie in the third

When Arsenic atoms are added to Germanium lattice, it becomes a/an (1) Insulator (2) Superconductor (3) Intrinsic semiconductor (4) Extrinsic semiconductor

Description : When Arsenic atoms are added to Germanium lattice, it becomes a/an (1) Insulator (2) Superconductor (3) Intrinsic semiconductor (4) Extrinsic semiconductor

Last Answer : Extrinsic semiconductor

Define intrinsic and extrinsic semiconductor.

Description : Define intrinsic and extrinsic semiconductor. 

Last Answer : Intrinsic – Semiconductor in pure form is called as intrinsic semiconductor. Extrinsic – Semiconductor with added impurity is called as extrinsic semiconductor.

Compare intrinsic and extrinsic semiconductor

Description : Compare intrinsic and extrinsic semiconductor

Last Answer : Intrinsic semiconductor Extrinsic Semiconductor Pure form of semiconductor Impure form of semiconductor No. electrons and holes are equal  No. of electrons and holes are not equal Electrical ... e.g. Ge, Si semiconductor e.g. p-type or n-type semiconductor

Why is an intrinsic semiconductor doped?

Description : Why is an intrinsic semiconductor doped?

Last Answer : Intrinsic semiconductor is doped in order to increase conductivity of semiconductor. Doping increases majority charge carries either electrons or holes and majority charge carriers responsible for electric current. 

Define (i) Intrinsic semiconductor (ii)Fermi energy level

Description : Define (i) Intrinsic semiconductor (ii)Fermi energy level  

Last Answer : (i) Intrinsic semiconductor: The semiconductor in extremely pure form is called as intrinsic semiconductor.  (ii) Fermi energy level : The energy difference between conduction band and valence band is called as fermi energy level.

In a single crystal of an intrinsic semiconductor, the number of free carriers at the Fermi level at room

Description : In a single crystal of an intrinsic semiconductor, the number of free carriers at the Fermi level at room temperature is: A) Half the total number of electrons in the crystal B) Zero C) Half the number of atoms in the crystal D) Half the number of free electrons in the crystal

Last Answer : In a single crystal of an intrinsic semiconductor, the number of free carriers at the Fermi level at room temperature is: Zero 

At very high temperatures, extrinsic semiconductor becomes intrinsic semiconductor because

Description : At very high temperatures, extrinsic semiconductor becomes intrinsic semiconductor because (A) Of drive in diffusion of dopants & carriers. (B) Band to band transition dominates impurity ionization. (C) ... band to band transition. (D) Band to band transition is balanced by impurity ionisation.

Last Answer : At very high temperatures, extrinsic semiconductor becomes intrinsic semiconductor because Impurity ionization dominates band to band transition.

Intrinsic semiconductor material is characterized by a valence shell of how many electrons?

Description : Intrinsic semiconductor material is characterized by a valence shell of how many electrons? a) 1 b) 2 c) 4 d) 6

Last Answer : Intrinsic semiconductor material is characterized by a valence shell of 4 electrons.

At absolute temperature, an intrinsic semiconductor has ……….

Last Answer : At absolute temperature, an intrinsic semiconductor has No holes or free electrons.

At room temperature, an intrinsic semiconductor has ……….

Last Answer : At room temperature, an intrinsic semiconductor has A few free electrons and holes.

In an intrinsic semiconductor, the number of free electrons ………

Last Answer :  In an intrinsic semiconductor, the number of free electrons Equals the number of holes.

At room temperature the current in an intrinsic semiconductor is due to

Last Answer : At room temperature, the current in an intrinsic semiconductor is due to holes and electrons.

What is meant by intrinsic semiconductor?

Last Answer : The semiconductor of purest form are called intrinsic semiconductor, (eg. Silicon and germinium) where as semiconductor made up by doping of other semiconductor called extrinsic semiconductor.(again extrinsic semiconductor classified as N type n P type semiconductor) 

Intrinsic impedance of free space is given as

Last Answer : Intrinsic impedance of free space is given as 377 ῼ.

In a P type semiconductor

Last Answer : In a P type semiconductor At room temperature the hole concentration equals the acceptor concentration

If a signal x(n)=x(–n), then it is called ____ signal.

Description : If a signal x(n)=x(–n), then it is called ____ signal. (1) Odd (2) Energy (3) Power (4) Even

Last Answer : If a signal x(n)=x(–n), then it is called even signal.

A snubber circuit is connected to the power semiconductor device to reduce the

Description : A snubber circuit is connected to the power semiconductor device to reduce the (A) turn-on time (B) turn-off time (C) electrical stresses (D) thermal resistance

Last Answer : A snubber circuit is connected to the power semiconductor device to reduce the electrical stresses

The Semiconductor strain gauges typically have much higher gauge factors than those of metallic strain

Description : The Semiconductor strain gauges typically have much higher gauge factors than those of metallic strain gauges, primarily due to : (A) higher temperature sensitivity (B) higher Poisson’s ratio (C) higher piezoresitive coefficient (D) higher magnetostrictive coefficient

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When the temperature of a doped semiconductor is increased, its conductivity...

Description : When the temperature of a doped semiconductor is increased, its conductivity  (1) Decreases (2) Increases (3) Does not change (4) Increases or decreases depending on whether it is p-type or n-type

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Which of the following semiconductor materials is (are) used for manufacturing solar cells?

Description : Which of the following semiconductor materials is (are) used for manufacturing solar cells?  (1) Gallium arsenide (2) Indium arsenide (3) Cadmium sulfide (4) All of these

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Avalanche break down in a semiconductor diode occurs when

Last Answer : Avalanche break down in a semiconductor diode occurs when Reverse bias exceeds a certain value

Do holes move in semiconductor?

Description : Do holes move in semiconductor?

Last Answer : Never,holes is just our assumption we say the vacancy of electrons is hole.hole are always remain just electrons move through it.means vacancy change in continuous manner.it look like hole are moving.

Categories of semiconductor components (Integrated circuit families)

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A semiconductor device made up of a single p-n Junction is called a: w) transistor x) diode y) Fet z) integrated circuit

Description : A semiconductor device made up of a single p-n Junction is called a: w) transistor x) diode y) Fet z) integrated circuit

Last Answer : ANSWER: X -- DIODE

What is n- type semiconductor ?

Description : What is n- type semiconductor ?

Last Answer : When a semiconductor substance is mixed with a five-component element as an adulterant or a waste, the negative charge carrier electron in them acts as the maximum charge carrier. Such semiconductors are called n- type semiconductors.

Explain the formation of an n-type semiconductor.

Description : Explain the formation of an n-type semiconductor.

Last Answer : When a small amount of a penta valant impurity like antimony, arsenic or phosphorous is added to a tetra valant element like Silicon or Germanium, four out of five electrons of each impurity ... becomes an n-type semiconductor. In an n-type semiconductor the majority charge carriers are electrons.

Classify each of the following as being either a p-type or an n-type Semiconductor.

Description : Classify each of the following as being either a p-type or an n-type Semiconductor.

Last Answer : (a) Ge dopped with In----p-type. (b) B dopped with Si----n-type.

What type of PN diode is formed by using a fine metal wire and a section of N-type semiconductor material?

Description : What type of PN diode is formed by using a fine metal wire and a section of N-type semiconductor material?

Last Answer : Point-contact.

What are the majority carriers in an N-type semiconductor?

Description : What are the majority carriers in an N-type semiconductor?

Last Answer : Electrons.

In the N-type semiconductor the charge carries are a) Holes b) Neutrons c) Protons d) Electrons

Description : In the N-type semiconductor the charge carries are a) Holes b) Neutrons c) Protons d) Electrons

Last Answer : d) Electrons

A semiconductor formed by addition of trivalent impurity is : a) P–Type b) N–Type c) Q–type d) M–Type

Description : A semiconductor formed by addition of trivalent impurity is : a) P–Type b) N–Type c) Q–type d) M–Type

Last Answer : d) M–Type

Hall effect may be used for which of the following? (A) determining whether the semiconductor is p or n type. (B) determining the carrier concentration. (C) calculating the mobility. (D) All the above.

Description : Hall effect may be used for which of the following? (A) determining whether the semiconductor is p or n type. (B) determining the carrier concentration. (C) calculating the mobility. (D) All the above.

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Distinguish between P-type and N-type semiconductor.

Description : Distinguish between P-type and N-type semiconductor. 

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In an n-type semiconductor, as the donor concentration ND increases, the Fermi level EF:

Description : In an n-type semiconductor, as the donor concentration ND increases, the Fermi level EF: (1) Remains unaltered (2) Moves towards the conduction band (3) Move towards the center of forbidden energy gap (4) May or may not move depending on temperature 

Last Answer : In an n-type semiconductor, as the donor concentration ND increases, the Fermi level EF: Moves towards the conduction band

The material used for ‘doping’ to prepare N - type semiconductor is

Description : The material used for ‘doping’ to prepare N - type semiconductor is

Last Answer : The material used for ‘doping’ to prepare N - type semiconductor is Arsenic

Majority carriers in n type semiconductor are_______.

Description : Majority carriers in n type semiconductor are_______. A. Electrons B. Holes C. Both D. None

Last Answer : Majority carriers in n type semiconductor are Electrons.

An n-type semiconductor is ………

Last Answer : An n-type semiconductor is Electrically neutral.

What does the letter "N" indicate in the semiconductor identification system?

Description : What does the letter "N" indicate in the semiconductor identification system?

Last Answer : A semiconductor.

NMOS stands for: a. N-channel metal-oxide-semiconductor b. P-channel metal-oxide-semiconductor c. N-channel memory-oxide-semiconductor d. All the above

Description : NMOS stands for: a. N-channel metal-oxide-semiconductor b. P-channel metal-oxide-semiconductor c. N-channel memory-oxide-semiconductor d. All the above

Last Answer : a. N-channel metal-oxide-semiconductor

In a semiconductor diode, p-side is earthed and to n-side is applied a potential of -2 volt; the diode shall (a) Conduct (b) Not conduct (c) Conduct partially (d) Break down

Description : In a semiconductor diode, p-side is earthed and to n-side is applied a potential of -2 volt; the diode shall (a) Conduct (b) Not conduct (c) Conduct partially (d) Break down

Last Answer : a) Conduct