In a n-channel MOSFET, an inversion layer is
(A) accumulation of electrons near the surface of the substrate under the gate
(B) accumulation of electrons near the drain
(C) accumulation of electrons near the surface
(D) accumulation of hole in the substrate
(A) accumulation of electrons near the surface of the substrate under the gate
(B) accumulation of electrons near the drain
(C) accumulation of electrons near the surface
(D) accumulation of hole in the substrate