The potential barrier at a P - N junction is due to 

1. Majority carriers 2. Minority carriers 3. Both majority and minority carriers 4. Fixed donor and acceptor ions 

1 Answer

Answer :

The potential barrier at a P - N junction is due to Fixed donor and acceptor ions 

Related questions

Description : Barrier potential in a P-N junction is caused by (A) Thermally generated electrons and holes. (B) Diffusion of majority carriers across the junction. (C) Migration of minority carriers across the junction. (D) Flow of drift current.

Last Answer : (B) Diffusion of majority carriers across the junction.

Description : Consider the following statements regarding the formation of P-N junctions: 1. Holes diffuse across the junction from P-side to N-side 2. The depletion layer is wiped out. 3. There is continuous flow of current across the junction 4 ... correct? (a) 1 and 3 (b) 2 and 3 (c) 1 and 4 (d) 2 and 4

Last Answer : Ans: (c) When a pn-junction is formed, there will be diffusion of carries across the junctions followed by recombination, and the creation of a depletion layer across which a ... potential is established, which will prevent further diffusion of carries across the junction, leading to equilibrium

Description : Barrier potential in a P-N junction is caused by   (A) thermally generated electrons and holes (B) diffusion of majority carriers across the junction (C) migration of minority carriers across the junction (D) flow of drift current.

Last Answer : Barrier potential in a P-N junction is caused by migration of minority carriers across the junction

Description : Define Depletion region and Barrier voltage of PN junction.

Last Answer : 1. Depletion region : The region consisting of immobile positive charge at n-side and immobile negative charge at p-side near the junction acts like a barrier and prevents the further flow of ... charge formed at the p-n junction is called barrier voltage, barrier potential or junction barrier.

Description :  applications of P-N junction diode

Last Answer : 1.It is used as rectifier in DC power supply 2.It is used as free wheel diode across relay or inductive load 3.It is used as switch in logic circuits used in computers 4.It is used as detector in demodulation circuits of communication receiver 

Last Answer : It is a sandwich of p type and n type semiconductor 

Description : Define i)P-N junction diode ii) Depletion layer iii)Forward bias iv)Reverse bias of P-N junction diode

Last Answer : i)P-N junction diode: It is a semiconductor device in which half of its region is P-type and other half is N-type.  ii) Depletion layer: The region where free electrons and free holes are absent ... and negative terminal is connected to p-side of p-n junction diode, it is said to be reverse bias.

Description : Explain the forward bias characteristics of a P-N Junction diode. 

Last Answer : forward and reverse characteristics of P-N junction diode.

Description : The capacitance of reverse biased P-N junction  1. Decreases with increasing the reverse bias 2. Increases with increasing the reverse bias 3. Depends only on reverse saturation current 4. Makes the P-N junction more effective at high frequencies 

Last Answer : The capacitance of reverse biased P-N junction Decreases with increasing the reverse bias

Description : The following are true about blood-brain barrier: a. it is permeable at birth b. it involves tight junction between endothelial cells and end feet processes of astrocytes c. it is absent in the posterior pituitary d. all above

Last Answer : all above

Description : The blood-brain-barrier: a. contains the foot processes of astrocytes b. contains endothelial cells with tight junction c. allows transport in one direction only ie from the vascular system into the brain d. does not allow diffusion of water

Last Answer : does not allow diffusion of water

Description : The following are true about tight junction: a. it forms a barrier to water b. it is found in the blood-aqueous barrier of the ciliary body c. it is found in the blood-retinal barrier at the apex of the retinal pigment epithelium d. all above

Last Answer : all above

Description : What type of bias opposes the PN junction barrier?

Last Answer : Forward.

Description : In the depletion region in the P-N junction there are: a) No charges b) No current c) No mobile charges d) No electron

Last Answer : Ans: C

Description : The width of depletion layer of a P-N junction – (1) decreases with light doping (2) increases with heavy doping (3) is independent of applied voltage (4) is increased under reverse bias

Last Answer : (4) is increased under reverse bias Explanation: The total width of the depletion region is a function of applied reverse-bias and impurity concentration. Forward bias decreases the depletion region width whilst reverse bias increases it.

Description : When two semiconductors of p-and ntype are brought in contact, they form p-n junction which acts like a/an – (1) Conductor (2) Oscillator (3) Rectifier (4) Amplifier

Last Answer : (3) Rectifier Explanation: P-n junction is a device which flows current in one direction when it is forward biased and when it is reverse biased it doesn't flow any current through it. So it ... (AC), which periodically reverses direction, to direct current (DC), which flows in only one direction.

Description : The waveform of a certain signal can be studied by – (1) Spectrometer (2) Cathode ray oscilloscope (3) p - n junction diode (4) Sonometer

Last Answer : (4) Sonometer Explanation: A spectrometer is an instrument used to measure properties of light over a specific portion of the electromagnetic spectrum. Cathode ray oscilloscope is an electronic display ... electron beam that is used to produce visible patterns or graphs on a phosphorescent screen.

Description : In the illustrated amplifier, the base of the transistor is what type of material? EL-0022 A. N type B. P type C. metal oxide insulator D. alloy junction material

Last Answer : Answer: A

Description : When is a p-n junction said to be forward biased or what is meant by forward biasing of p-n junction? How does it affect resistance?

Last Answer : When the positive terminal of a cell is connected to p-side and negative terminal to the n-side of a p-n junction then it is said to be forward biased. It offers low resistance.

Description : When is a p-n junction said to be biased?

Last Answer : When an external source of e.m.f is connected to a p-n junction, it is said to be biased.

Description : What is a p-n junction?

Last Answer : The junction that is obtained when a p-type semiconductor and an n-type semiconductor are kept in contact is called p-n junction.

Description : Why gold is added to the p-n junction?

Last Answer : Ans-To reflect heat. To reduce the recombination time.

Description : In the reverse biased p-n junction, the current is of the order of (a) Ampere (b) Milliampere (c) Microampere (d) Nano-ampere

Last Answer : (d) Nano-ampere

Description : On increasing the reverse bias to a large value in a p-n junction diode current (a) Increases slowly (b) Remains fixed (c) Suddenly increases (d) Decreases slowly

Last Answer : (c) Suddenly increases

Description : P-n junction when reversed biased acts as a (a) Capacitor (b) inductor (c) on switch (d) off switch

Last Answer : d) off switch

Description : Which is the most important building block of electronic devices? (a) Diode (b) p-n junction (c) transistor (d) rectifier

Last Answer : b) p-n junction

Description : A transistor has (A) One p-n junction. (B) Two p-n junction. (C) Four p-n junction. (D) Five p-n junction.

Last Answer : (B) Two p-n junction.

Description : P-N junction is (A) a rectifier. (B) an amplifier. (C) an Oscillator. (D) a Coupler.

Last Answer : (A) a rectifier.

Description : List four specifications of zener diode or P- N junction diode.

Last Answer : Specifications of zener diode: 1. Zener voltage 2. Power dissipation 3. Maximum power dissipation PD(max) 4. Breakdown current 5. Dynamic resistance 6. Maximum reverse current. (OR) ... Reverse saturation current 5. Power dissipation 6. Junction temperature 7. Peak inverse voltage (PIV)

Description : Write two applications of P-N junction diode and zener diode. 

Last Answer : Application of P-N junction diode: Used in rectifier circuit Used in clipping and clamping circuit. Used for A.M detection Used for voltage multiplier. Application of Zener diode: It is ... . Used in protection circuits for MOSFET. Used in pulse amplifier. Used in clipping circuits.

Description : Draw and explain V-I characteristics of a P-N junction diode.

Last Answer : V-I Characteristics of a P-N junction: V-I characteristics of a Diode: The V-I characteristics can be divided in two parts. 1. Forward characteristics. 2. Reverse ... plot a graph with reverse voltage on horizontal axis and current on vertical axis, we obtain reverse characteristics.

Description : Compare P-N junction and Zener Diode.

Last Answer : P-N junction Zener Diode It conducts in only in one direction.  It conducts in both the directions. It is always operated in forward bias condition. It is always operated in ... . It cannot be used for rectification, but commonly used for voltage regulation

Description : Draw V-I characteristics of p-n junction diode? Define static and dynamic resistance of diode.

Last Answer : Static Resistance: The resistance offered by a p-n junction diode when it is connected to a DC circuit is called static resistance.  (OR) It is the ratio of DC voltage applied across diode ... The dynamic resistance of a diode is the ratio of change in voltage to the change in current. 

Description : A semiconductor device made up of a single p-n Junction is called a: w) transistor x) diode y) Fet z) integrated circuit

Last Answer : ANSWER: X -- DIODE

Description : When two semiconductors of pand n-type are brought in contact, they form p-n junction which acts like a/an (1) Conductor (2) Oscillator (3) Rectifier (4) Amplifier

Last Answer : Rectifier

Description : The waveform of a certain signal can be studied by (1) Spectrometer (2) Cathode ray oscilloscope (3) p – n junction diode (4) Sonometer

Last Answer : Sonometer

Description : The width of depletion layer of a P-N junction (1) decreases with light doping (2) increases with heavy doping (3) is independent of applied voltage (4) is increased under reverse bias

Last Answer :  is increased under reverse bias

Description : The region consisting of holes and electrons near the p-n junction of a diode is (A) diffusion region (B) neutral zone (C) recombination region (D) depletion region 

Last Answer : The  region  consisting  of  holes  and  electrons  in a  pn  junction  is called  depletion layer.The  reason  being  both  holes  and  electrons have neutrolyzed at the  junction  thus  it  is depleated  with  delocalized  charge  carriers.

Description : In a tunnel diode, electrons can tunnel through the P-N junction mainly because  1.impurity level is low 2.they have high energy 3.barrier potential is very low 4.depletion layer is extremely thin 

Last Answer : In a tunnel diode, electrons can tunnel through the P-N junction mainly because depletion layer is extremely thin 

Description : When a P - N junction is forward biased  1.only electrons in N-region are injected into P-region 2.only holes in P-region are injected into N-region 3.majority carriers in each region are injected into the other region 4.minority current is reduced to zero 

Last Answer : When a P - N junction is forward biased majority carriers in each region are injected into the other region 

Description : In a PN-junction with open circuit terminal (equilibrium), with P doping higher as compared to N doping (A) N-side depletion region is small as compared to p-side depletion region (B) N-side ... depletion region (C) N-side depletion region is same as p-side depletion region (D) Cannot say

Last Answer : In a PN-junction with open circuit terminal (equilibrium), with P doping higher as compared to N doping N-side depletion region is small as compared to p-side depletion region

Description : P-N junction is  A) a rectifier B) an amplifier C) an oscillator  D) a coupler

Last Answer : P-N junction is a rectifier.

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Last Answer : Lecture -1: p-n Junction Diode Diode: A pure silicon crystal or germanium crystal is known as an intrinsic semiconductor. There are not enough free electrons and holes in an intrinsic ... . Therefore, there is a flow of carriers and thus flow of current. IIT ROORKEE

Description : What is the potential barrier of metal?

Last Answer : Potential barrier of metal is zero.

Last Answer : The p-type substrates in a conventional pn-junction isolated integrated circuit should be connected to: The most negative potential available in the circuit.

Description : Why can't the potential barrier of a diode be used as a voltage source?

Last Answer : The potential barrier of a diode is caused by the movement ofelectrons to create holes. The electrons and holes create apotential barrier, but as this voltage will not supply current, itcannot be used as a voltage source.

Description : What is barrier potential?

Last Answer : Because of the oppositely charged ions present on both sides of PN junction an electric potential is established across the junction even without any external voltage source which is termed as barrier potential.

Description : Pick out the wrong statement. (A) Exit age description function (E) and internal age distribution function (I) are related as, E = -(dI/dθ) (B) Chemisorption studies are useful in the ... energy (D) A catalyst increases the potential energy barrier over which the reactants must pass to form products

Last Answer : (D) A catalyst increases the potential energy barrier over which the reactants must pass to form products

Description : The potential difference set up across the depletion region is called (a) Absolute potential (b) neutral potential (c) reverse potential (d) potential barrier

Last Answer : (d) potential barrier

Description : In forward bias, the width of potential barrier __________ (a) Increases (b) decreases (c) remains same (d) no effect

Last Answer : (b) decreases