For IGBT, which of the following statement is true?
(a) Switching speed of IGBT is more than bipolar transistor (b) IGBT is a current-controlled device (c) On-state collector-emitter voltage is less than that of bipolar junction transistor (d) It combines voltage control features of MOSFET gate and high power capability of bipolar transistor
(a) Switching speed of IGBT is more than bipolar transistor (b) IGBT is a current-controlled device (c) On-state collector-emitter voltage is less than that of bipolar junction transistor (d) It combines voltage control features of MOSFET gate and high power capability of bipolar transistor