IGBT (Insulated Gate Bipolar Transistor)
•IGBT combines the advantages of BJT and MOSFET.
•High switching speed of MOSFET
•Low conduction losses of BJT
•No second breakdown problem
•Three terminal (Gate, emitter and collector)
•High efficiency
•Fast switching
•Four layers PNPN
•Controlled by MOS gate structure
•Topologically same as thyristor with MOS gate
•IGBT is a voltage controlled device.
•The input impedance of IGBT is high.
•The drive circuit of IGBT is simple.
•Switching speed of IGBT is more than BJT but less than MOSFET.
•IGBT shows negative temperature coefficient up to 70% after that it shows positive temperature coefficient.
•Conduction losses are low.
•Switching losses are low for high frequency.
•IGBT is bipolar device.
•IGBT is minority carrier device.
•IGBT have input characteristics of MOSFET and output characteristics of BJT.