What is IGBT (Insulated Gate Bipolar Transistor) ?

2 Answers

Answer :

IGBT (Insulated Gate Bipolar Transistor)

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IGBT combines the advantages of BJT and MOSFET.
High switching speed of MOSFET
Low conduction losses of BJT
No second breakdown problem
Three terminal (Gate, emitter and collector)
High efficiency
Fast switching
Four layers PNPN
Controlled by MOS gate structure
Topologically same as thyristor with MOS gate
IGBT is a voltage controlled device.
The input impedance of IGBT is high.
The drive circuit of IGBT is simple.
Switching speed of IGBT is more than BJT but less than MOSFET.
IGBT shows negative temperature coefficient up to 70% after that it shows positive temperature coefficient.
Conduction losses are low.
Switching losses are low for high frequency.
IGBT is bipolar device.
IGBT is minority carrier device.
IGBT have input characteristics of MOSFET and output characteristics of BJT.

Answer :

As compare to BJT and MOSFET, IGBT have very low on state voltage drop. IGBT require low driving power. IGBT have wide SOA (Safe Operating Area). The current conduction capability of IGBT is better than BJT. But the switching speed of IGBT is less than MOSFET and more than BJT. Because the turning off time of IGBT is bit slow. IGBT is very useful for improving dynamic performance and efficiency. IGBT also very good in reducing audible noise.

Related questions

Description : The number of terminals present in IGBT is A) 2 B) 3 C) 4 D) 5

Last Answer : The number of terminals present in IGBT is 3

Description : For IGBT, which of the following statement is true?  (a) Switching speed of IGBT is more than bipolar transistor (b) IGBT is a current-controlled device (c) On-state collector- ... transistor (d) It combines voltage control features of MOSFET gate and high power capability of bipolar transistor

Last Answer : For IGBT, which of the following statement is true?  (a) Switching speed of IGBT is more than bipolar transistor (b) IGBT is a current-controlled device (c) On-state collector- ... transistor (d) It combines voltage control features of MOSFET gate and high power capability of bipolar transistor

Description : IGBT is a voltage controlled device. Why?

Last Answer : Because the controlling parameter is gate-emitter voltage.

Description : Why IGBT is very popular nowadays?

Last Answer : a. Lower hEAT requirements b. Lower switching losses c. Smaller snubber circuit requirements

Description : What are the various parameters we have to consider, while selecting IGBT?

Last Answer : In IGBT datasheet, we have to focus on following parameters Collector to emitter voltage VCESCollector Current ICCollector Dissipation PCJunction Temperature Tj

Description : For High frequency applications will you prefer MOSFET or IGBT? Why?

Last Answer : For High frequency applications, MOSFET is the right choice of the device.Because MOSFET has low switching losses compare to that of IGBT.General rule of thumb is for low-frequency applications ... For high frequency applications having frequency range of more than 200kHz, we have to use MOSFET

Description : For High voltage applications will you prefer MOSFET or IGBT?

Last Answer : For High voltage applications we have to use IGBT. Because MOSFETs are low voltage devices. ie, Their voltage rating is lesser than IGBT. General rule is MOSFETs are suitable for applications ... voltage less than 250V. The IGBTs are suitable for applications which has breakdown voltage upto 1000V.

Description : A modern power semiconductor device IGBT is combines the characteristics of a) BJT and MOSFET b) FCT and GTO c) SCR and MOSFET d) SCR and BJT

Last Answer : Ans: BJT and MOSFET

Description : IGBT uses IGBT uses

Last Answer : Applications of IGBT: 1. The insulated gate bipolar transistor (IGBT) is used Ac and DC motor drivers. 2. The IGBT is used in unregulated power supply (UPS) system. 3. The IGBT is used to ... an isolated-gate FET for the control input and a bipolar power transistor as a switch in a single device.

Description : Describe with neat sketch the constructional details of IGBT.

Last Answer : Construction: Insulated gate bipolar transistor or IGBT, is a solid state devices primarily used as an electronic switch which, as it was developed, came to combine high efficiency and fast ... layer and p+ emitter constitute a BJT with a wide base region and hence small current gain.

Description : Draw construction of IGBT.

Last Answer : construction of IGBT

Description : Give the applications of IGBT

Last Answer : 1) AC and DC motor drives 2) SMPS 3) Inverters 4) Choppers 5) Solid-state Relays 6) solid-state Contactors

Description : Which phenomenon is present in thyristors but absent in BJT, MOSFET and IGBT ? (A) forward conduction (B) latching (C) forward blocking (D) reverse breakdown

Last Answer : Which phenomenon is present in thyristors but absent in BJT, MOSFET and IGBT ? (A) forward conduction (B) latching (C) forward blocking (D) reverse breakdown

Last Answer : IGBT is used as High frequency switching device.

Last Answer : Igbt alone cant convert dc to ac. igbt half bridge or full bridge or three phase topology could be used to convert dc to ac. also igbt gates should be driven by microcontroller or pwm/spwm gate driving signals ... e4(-) and g4 c2e1 and c4e3 pins are AC output pins. its name is igbt inverter.

Description : Compare BJT, MOSFET and IGBT .

Last Answer : BJT MOSFET IGBT BJT is a current controlled device. MOSFET is a voltage controlled device. IGBT is a voltage controlled device. The input impedance of BJT is low. ... is minority carrier device. MOSFET is majority carrier device. IGBT is minority carrier device.

Last Answer : Yes IGBT is costlier than BJT and MOSFET.

Last Answer : Because it has a higher switching frequency and heat tolerance.

Description : Justify the statements. 1. IGBT uses a vertically oriented structure. 2. IGBT is preferred as a power switch over both power BJT and MOSFET. 3. Punch through IGBT structure are more popular and are widely used.

Last Answer : 1. IGBT uses vertically oriented structure. IGBT use vertically oriented structure to reduce the resistance and to increase the current flow area. Hence IGBT uses vertically oriented ... DC circuit applications. Hence punch through IGBT structure are more popular and are widely used.

Description : Also, highlight the problem faced during parallel operation.

Last Answer : Parallel operation of IGBT: Parallel operation of IGBT is done for obtaining high current rating. Paralleling of IGBT reduces conduction losses and thermal stress. IGBT combines the qualities of ... . IGBTs must share losses equally otherwise IGBT may get failure due to thermal differences.

Last Answer : No, IGBT is not the current controlled device. IGBT is a voltage controlled device. IGBT have combine qualities of MOSFET and BJT. The high switching speed of MOSFET and low conduction losses of BJT. Also, IGBT which stands for Insulated Gate Bipolar Transistor have high input impedance.

Last Answer : IGBT is a bipolar device.

Last Answer :  IGBT or Insulated Gate Bi-polar Transistors are typically semiconductor devices aka.  controlled switches,  which find their applications in Power Electronics circuits such as Inverters, and electrical ... ( buy implementing suitable Pulse Width Modulation scheme ) * Lower cost 

Last Answer : IGBT is a bipolar device because current is carried by both holes and electrons.

Last Answer : ON state losses of IGBT is less as compared to MOSFET and BJT.