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Answer :

No MOSFET do not have a second breakdown problem.

Related questions

Last Answer : Yes BJT have second breakdown problem.

Description : Explain zener breakdown and avalanche breakdown.

Last Answer : The Zener Breakdown and Avalanche Breakdown are two different mechanisms by which a PN junction breaks. The Zener and Avalanche breakdown both occur in diode under reverse bias. The avalanche breakdown ... in the PN junction and causes breakdown. The process is known as the Avalanche breakdown.

Description : Define : (i) Dielectric strength (ii) Breakdown voltage

Last Answer : (i) Dielectric strength: The voltage which a dielectric material can withstand without breaking down (without losing its dielectric property) is called its dielectric strength. It is represented by kV/mm ... or is no longer an insulator) for a specified thickness, is its breakdown voltage. 

Description : The electric breakdown strength of insulating materials depends on  (A) Nature of applied voltage (B) lmperfection of dielectric material (C) Pressure, temperature and humidity (D) All or these

Last Answer : The electric breakdown strength of insulating materials depends on  (A) Nature of applied voltage (B) lmperfection of dielectric material (C) Pressure, temperature and humidity (D) All or these

Description : The second harmonic distortion is defined as the A) Ratio of amplitude of second harmonic component in the output to that of the fundamental frequency B) Harmonic distortion due to only second harmonic component C) Sum of distortion of first and second harmonic components in the output 

Last Answer : The second harmonic distortion is defined as the Ratio of amplitude of second harmonic component in the output to that of the fundamental frequency

Last Answer : Yes IGBT is costlier than BJT and MOSFET.

Last Answer : MOSFET  are voltage controlled devices.

Last Answer : MOSFETs are of two types namely  1) enhancement type MOSFET  or  E-MOSFET 2) depletion type MOSFET  or  D-MOSFET

Last Answer : MOSFET have high current losses due to High on state resistance. Hence MOSFET is used for low power applications.

Last Answer : Because of positive temperature coefficient of mosfet the paralleling of mosfet is easier.

Last Answer : Yes MOSFET can operate at very high frequency.

Description : what are the uses of MOSFET ?

Last Answer : Choppers and inverters and where high switching frequency is required.

Description : what is MOSFET ?

Last Answer : MOSFET is a type of Field Effect Transistor (FET). It is a voltage controlled transistor. MOSFET have very high input impedance. It can be use with very low current circuits. It is very fast ... of Nano ampere. There are two types of MOSFET one is enhancement mode and second is depletion mode.

Description : How to Teach English as a Second Language ?

Last Answer : How to Teach English as a Second Language The English language is fast becoming the language of choice for business, trade, and international relations. Knowledge of the English language is also necessary for ... With these tips, you can help students learn and use English to get ahead in life.

Description : A transfer function has a second order denominator and constant gain in the numerator

Last Answer : A transfer function has a second order denominator and constant gain in the numerator the system has two zeros at infinity

Description : A second order system shows 100% overshoot in its unit step response. It can be categorized as (A) underdamped system. (B) overdamped system. (C) Critically damped system. (D) undamped system.

Last Answer : A second order system shows 100% overshoot in its unit step response. It can be categorized as undamped system.

Description : Joule X second is the unit of?

Last Answer : Joule X second is the unit of power .

Description : State advantages of MOSFET.

Last Answer : Advantages of MOSFET * MOSFETs provide greater efficiency while operating at lower voltages. * Absence of gate current results in high input impedance. * High switching speed. * They operate at lower ... due to lower resistance of channel. * They are easy to manufacture. * They are portable.

Description : Describe with neat sketch the construction and working principle of MOSFET.

Last Answer : Construction and working principle of MOSFET:  A) Depletion type MOSFET: Construction: The N-channel depletion type MOSFET is formed on P-type silicon substrate with two heavily ... accumulation of electrons and hence more current. Thus the MOSFET is a gate voltage controlled device.

Description : State the applications of MOSFET

Last Answer : Applications of MOSFET: i) Switching-mode-power-supplies (SMPS) and linear power supplies. ii) Brushless DC motor drives iii) Solid state DC relay iv) Automobile applications v) Stepper motor controller vi) Lighting controls vii) Solenoid drivers viii) Robotics ix) Induction heating

Description : Compare JFET with MOSFET.

Last Answer : Particulars JFET MOSFET 1) Type Voltage controlled device Voltage controlled device 2) Mode of operation Operates only in depletion mode Operates in depletion and enhancement ... 6) Gate connection Not isolated from substrate Isolated by SiO2 layer from substrate

Description : Describe the operation of N channel enhancement type MOSFET with diagram.

Last Answer : As its name indicates, this MOSFET operates only in the enhancement mode and has no depletion mode. It operates with large positive gate voltage only. It does not conduct when the ... of charge carriers attracted to the positive gate. Thus drain current is controlled by the gate potential.

Description : A certain power MOSFET has a maximum junction temperature specification of 1500o C, a junction-to-case thermal resistance of 1.00 C/W, and a junction-to ambient thermal resistance of 600 C/W. If the ambient temperature is 300o C ... the device will be A) 1.52 W B) 1.72 W C) 1.92W D) 2.00 W

Last Answer : A certain power MOSFET has a maximum junction temperature specification of 1500o C, a junction-to-case thermal resistance of 1.00 C/W, and a junction-to ambient thermal resistance of  ... 300o C, then the maximum allowable power dissipation in the device will be 2.00 W 

Description : When does the Body bias effect occur in an n-channel MOSFET?  A) When the Source voltage is less the Bulk voltage B) When the Source voltage is equal to or greater the Bulk voltage C) When the Drain voltage is equal to the Bulk voltage D) When the Gate voltage is equal to the Bulk Voltage 

Last Answer : When does the Body bias effect occur in an n-channel MOSFET?  A) When the Source voltage is less the Bulk voltage B) When the Source voltage is equal to or greater the Bulk voltage C) ... voltage is equal to the Bulk voltage D) When the Gate voltage is equal to the Bulk Voltage 

Description : The threshold voltage of an n- channel enhancement mode MOSFET is 0.5V when the device is biased at a gate voltage of 3V. Pinch off would be occurs at a drain voltage of (A) 1.5V (B) 2.5V (C) 3.5V (D) 4.5V

Last Answer : The threshold voltage of an n- channel enhancement mode MOSFET is 0.5V when the device is biased at a gate voltage of 3V. Pinch off would be occurs at a drain voltage of 2.5V

Description : Which phenomenon is present in thyristors but absent in BJT, MOSFET and IGBT ? (A) forward conduction (B) latching (C) forward blocking (D) reverse breakdown

Last Answer : Which phenomenon is present in thyristors but absent in BJT, MOSFET and IGBT ? (A) forward conduction (B) latching (C) forward blocking (D) reverse breakdown

Description : A MOSFET has how many terminals?

Last Answer : A MOSFET having three terminals 1st one is Gate (insulated), 2nd one is Source and 3rd one is Drain.

Description : What is channel length modulation in MOSFET?

Last Answer : Shortening of lenght of the inverted channel region with increase in drain bias for large drain biases due to which current increases with drain bias and output resistance decreases is called channel length modulation in MOSFET.

Description : Why Mosfet is called Mosfet?

Last Answer : Why Mosfet is called Mosfet?

Description : In MOSFET, the polarity of the inversion layers is the same as that of?

Last Answer : In MOSFET, the polarity of the inversion layers is the same as that of majority carriers in the source.

Description : MOSFET uses the electric field of?

Last Answer : MOSFET uses the electric field of gate capacitance.

Description : Is the input impedance of MOSFET more than BJT and FET?

Last Answer : Yes, the input impedance of MOSFET more than BJT and FET.

Description : Explain MOSFET gate drive circuit and totem pole configuration.

Last Answer : MOSFET gate drive circuit: The turning on and turning off of MOSFET can be controlled from gate to source voltage signal. If the gate to source voltage of MOSFET exceeds threshold ... this configuration, the two switches (transistors) are used in totem pole arrangement with a comparator.

Description : Explain the formation of parasitic BJT and parasitic diode in Power MOSFET. Can parasitic diode be used in same power electronics applications?

Last Answer : Parasitic Diode: The parasitic diode is in between drain and source. The MOSFET structure itself contains parasitic diode or body drain diode. This parasitic diode allows the reverse flow of current when the ... of MOSFET as a BJT collector. Parasitic BJT operates in the cut-off region.

Description : Operating frequency of power MOSFET is higher than that of power BJT. Justify the statement.

Last Answer : Power MOSFET have high turning on and turning off capability high switching speed of MOSFET is due to the high rate of change of drain voltage. The switching losses of power MOSFET ... lower frequency. Hence, operating frequency of power MOSFET is higher than that of power BJT.

Description : Justify the statement. Antiparallel diode is connected across MOSFET.

Last Answer : In MOSFET current is flow from drain to source but when the load is inductive the current may flow in opposite direction. To avoid the opposite flow of current and to protect MOSFET the antiparallel diode is connected across MOSFET.

Description : parallel operation of MOSFET can be done more easily as compared to thyristor. why?

Last Answer : Parallel operation of MOSFET can be done more easily as compared to thyristor because the resistance of MOSFET is increases with increase in temperature. MOSFET have the positive temperature coefficient. In ... the parallel operation of MOSFET can be done more easily as compared to the thyristor.

Description : Justify. Power MOSFET is operated at high enough gate source voltage to minimize the conduction losses. 

Last Answer : MOSFET is metal oxide field effect transistor. MOSFET is a voltage controlled device. MOSFET is majority carrier device. MOSFET are of two one is n-channel MOSFET and p-channel MOSFET. Gate, ... . Hence, power MOSFET is operated at high enough gate-source voltage to minimize the conduction losses.

Description : Explain difference between enhancement MOSFET and depletion type MOSFET.

Last Answer : In enhancement MOSFET channel is not initially exists but in depletion MOSFET channel is already exists. In case of depletion MOSFET if the voltage is applied between drain and source the drain current will flow ... a channel. depletion MOSFET & enhancement MOSFET

Description : Compare BJT, MOSFET and IGBT .

Last Answer : BJT MOSFET IGBT BJT is a current controlled device. MOSFET is a voltage controlled device. IGBT is a voltage controlled device. The input impedance of BJT is low. ... is minority carrier device. MOSFET is majority carrier device. IGBT is minority carrier device.

Description : Explain the series and parallel operation of MOSFET. Which is suitable and why?

Last Answer : Series operation of MOSFET: To increase voltage handling capability MOSFETs are connected in series. When the MOSFETs are connected in series each MOSFET should turn on and turn off ... on and turn off time and transconductance. Each MOSFET should share current equally.  

Last Answer : Because it has a higher switching frequency and heat tolerance.

Description : What is depletion type MOSFET?..........

Last Answer : Depletion MOSFET: Depletion MOSFET is a MOSFET in which the channel already exists. If we apply a voltage between drain and source then the drain current will flow even if the gate to source ... in figure. The drain current will be reduced as the gate to source voltage made more negative.

Description : What is enhancement MOSFET?...............

Last Answer : Enhancement MOSFET: There are two types of MOSFET one is enhancement MOSFET and second is depletion MOSFET. In enhancement MOSFET channel is created by applying threshold voltage between gate and source ... mode. The enhancement MOSFET will not conduct if the gate to source voltage is zero.

Last Answer : ON state losses of IGBT is less as compared to MOSFET and BJT.

Last Answer : No, MOSFET is not the curent controlled device. The current between drain and source which is drain current is controlled by applying a voltage between gate and source hence MOSFET is a voltage controlled device. 

Last Answer : already answered here is mosfet current controlled device?

Last Answer : MOSFET provides better efficiency at high frequency and its high speed switching losses are less hence MOSFET is used for high frequency.

Description : What do you do when you have a problem that you can't solve until the next morning?

Last Answer : Sleep on it. Go do some exercise, burn yourself out and get rid of the nervous energy.

Description : Sinusoidal Steady-State Analysis - nodal analysis super node problem solution 2

Last Answer : Sinusoidal Steady-State Analysis - nodal analysis super node problem solution 2