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Yes IGBT is costlier than BJT and MOSFET.
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Last Answer : Which phenomenon is present in thyristors but absent in BJT, MOSFET and IGBT ? (A) forward conduction (B) latching (C) forward blocking (D) reverse breakdown

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Last Answer : BJT MOSFET IGBT BJT is a current controlled device. MOSFET is a voltage controlled device. IGBT is a voltage controlled device. The input impedance of BJT is low. ... is minority carrier device. MOSFET is majority carrier device. IGBT is minority carrier device.

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Last Answer : Because it has a higher switching frequency and heat tolerance.

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Last Answer : ON state losses of IGBT is less as compared to MOSFET and BJT.

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Last Answer : Yes, the input impedance of MOSFET more than BJT and FET.

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Explain the formation of parasitic BJT and parasitic diode in Power MOSFET. Can parasitic diode be used in same power electronics applications?
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Last Answer : Construction: Insulated gate bipolar transistor or IGBT, is a solid state devices primarily used as an electronic switch which, as it was developed, came to combine high efficiency and fast ... layer and p+ emitter constitute a BJT with a wide base region and hence small current gain.

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Last Answer : construction of IGBT

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Also, highlight the problem faced during parallel operation.
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Last Answer : No, IGBT is not the current controlled device. IGBT is a voltage controlled device. IGBT have combine qualities of MOSFET and BJT. The high switching speed of MOSFET and low conduction losses of BJT. Also, IGBT which stands for Insulated Gate Bipolar Transistor have high input impedance.

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Last Answer : IGBT is a bipolar device.

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Last Answer :  IGBT or Insulated Gate Bi-polar Transistors are typically semiconductor devices aka.  controlled switches,  which find their applications in Power Electronics circuits such as Inverters, and electrical ... ( buy implementing suitable Pulse Width Modulation scheme ) * Lower cost 

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Last Answer : IGBT is a bipolar device because current is carried by both holes and electrons.

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Last Answer : BJT act as switch in saturation and  cutoff region ( ON state in saturation region and OFF state in cut-off region )

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Last Answer : Yes BJT have second breakdown problem.

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Last Answer : BJT is current controlled device.

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Last Answer : BJT have three terminals Base, emitter and collector.

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Last Answer : In  BJT  there  is  movement  of   electrons  and  holes   accros  the  junctions  which  is  basicaly  current  flow.

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Last Answer : When Q-point is at cut off region means it is just above the horizontal axis VCE

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Last Answer : No MOSFET do not have a second breakdown problem.

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Last Answer : MOSFET  are voltage controlled devices.

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