If the base current of a BJT is 250 µA and emitter current is 15 mA, then the common base current gain will be A) 0.98 B) 0.41 C) 59 D) 55  

1 Answer

Answer :

 If the base current of a BJT is 250 µA and emitter current is 15 mA, then the common base current gain will be 0.98 

Related questions

Description : Explain open emitter BJT drive circuit.

Last Answer : open emitter BJT drive circuit:

Description : Why common emitter configuration is commonly used?

Last Answer : Common emitter configuration is commonly used for amplifications because 1. The common emitter configuration (CE) provides maximum voltage and current gain and hence provides maximum power gain. The ... automatic impedance matching maximum power transfer will take place from one stage to other.

Description : The ac bypassing of RF by CF in a common emitter configuration :  (A) increases ac signal across emitter -base junction (B) decreases ac signal across emitter -base junction (C) decreases voltage amplification (D) stabilizes the Q -point

Last Answer : The ac bypassing of RF by CF in a common emitter configuration : increases ac signal across emitter -base junction

Last Answer : In  BJT  there  is  movement  of   electrons  and  holes   accros  the  junctions  which  is  basicaly  current  flow.

Description : What is the current gain?

Last Answer : Current gain β = Ic/Ib

Description : Which configuration has the lowest current gain ?

Last Answer : Common base configuration has the lowest current gain.

Description : What is the difference between BJT and FET?

Last Answer : BJT  is  a  current  opperated   transistor  while  FET   is  a  field   opperated  transistor.

Description : What is a BJT amplifier?

Last Answer : Bilpolar Juntion transistor , this fuction is control the current

Description : In BJT, the common emitter gain β is (A) desired to have large value (B) desired to have small value (C) desired to have moderate value (D) the value need not be controlled

Last Answer : In BJT, the common emitter gain β is desired to have large value.  β is the Current gain factor also called transport factor. 

Description : For the active mode BJT operation (A) Emitter Base Junction is Forward Biased and Collector Base Junction is Forward Biased (B) Emitter Base Junction is Reverse Biased and Collector Base Junction ... Biased (D) Emitter Base Junction is Reverse Biased and Collector Base Junction is Forward Biased

Last Answer : For the active mode BJT operation Emitter Base Junction is Forward Biased and Collector Base Junction is Reverse Biased.

Last Answer : BJT is current controlled device.

Description : What is an emitter follower BJT circuit ? (A) Common Collector Amplifier (B) Common Emitter Amplifier (C) Common Base Amplifier (D) None of the above

Last Answer : What is an emitter follower BJT circuit ? (A) Common Collector Amplifier (B) Common Emitter Amplifier (C) Common Base Amplifier (D) None of the above

Description : A differential amplifier has a differential gain of 28000 and CMRR is 60 dB. What will be the value of common mode gain? A) Ac = 0.125 B) Ac = 0.33 C) Ac = 3 D) Ac = 28 

Last Answer : A differential amplifier has a differential gain of 28000 and CMRR is 60 dB. What will be the value of common mode gain? A) Ac = 0.125 B) Ac = 0.33 C) Ac = 3 D) Ac = 28 

Description : A differential amplifier has a differential gain of 20,000, CMRR : 80 dB. The common mode gain is given by

Last Answer : A differential amplifier has a differential gain of 20,000, CMRR : 80 dB. The common mode gain is given by 2

Description : The voltage gain of a common -source JFET amplifier depends up on its  (1) Input impedance (2) Amplification factor (3) Dynamic drain resistance (4) Drain load resistance

Last Answer : B

Description : How to Steal a Base

Last Answer : How to Steal a Base One of the most exciting things about baseball is stealing bases. With proper timing and good skills, you'll be able to go from one base to another without so much effort. Here ... eventually have our own way of stealing a base, but for now, you can stick to these basic steps.

Description : Select insulating materials for following parts : (i) Insulation between heating element and base plate of electric iron. (ii) Insulation used over copper or aluminium conductor used for making coils. (iii) Transformer bushings. (iv) Insulation between transmission line and pole.

Last Answer : Parts Insulating Materials  Insulation between heating element and base plate of electric iron. Mica Insulation used over copper or aluminium conductor used for making coils.  ... Transformer bushings Porcelain  Insulation between transmission line and pole. Porcelain

Description : Define the following terms : (i) Base Station (ii) Control Channel (iii) Mobile Station (iv) Page 

Last Answer : i) Base Station: - A fixed station in a mobile radio system used for radio communication with mobile stations. Base stations are located at the center or on the edge of a coverage region ... the page throughout the service area using base stations which broadcast the page on a radio carrier.

Description : Compare base load plant with peak load plant on any two points.

Last Answer : Points Base load plant Peak load plant Definition The power plant which supplies base load of load curve is known as base load plant  The power plant which supplies ... ,thermal,nuclear power station Small capacity storage hydro,pumped storage hydro,gas,diesel power station.

Description : State why nuclear power plants are used as base load plants and diesel power plants as a peak load plant. 

Last Answer : 1. Because of following points Nuclear power plant used as base load power plant:-  1. Nuclear power plants is very economical for producing bulk amount of electric power 2. Nuclear power plant is reliable ... . The plants can be put on load easily. 4. Diesel engines take less time to make OFF.

Description : What are the seven base units?

Last Answer : Length, mass, time, electric current, temperature, luminous intensity and amount of substance are the seven base units.

Description : The time base signal in Cathode Ray Oscilloscope (CRO) is  (1) A square wave signal (2) A sawtooth signal (3) A triangular wave signal (4) A sinusoidal signal

Last Answer : 2 Saw tooth 

Last Answer : Nuclear power plant is invariably used as base load plant.

Description : State 2 advantages of JFET over BJT.

Last Answer : Advantages of JFET over BJT: 1) High input impedance 2) Better thermal stability 3) Produce less noise 4) Smaller than BJT 5) Rugged in construction and simpler to fabricate 6) High degree of isolation between Input and Output. 

Description : List specification of BJT.

Last Answer : * The bipolar junction transistor (BJT) has small signal current gain, α (hfb). * Maximum collector current Ic (max). * Maximum collector to emitter voltage, VCE (max). * Collector to emitter ... . * Collector to emitter cut off voltage, VCEO. * Base emitter saturation voltage, VBE (sat).

Description : State reason BJT is called as bipolar junction transistor.

Last Answer : BJT is called bipolar junction transistor because in BJT current conduction takes place due to majority as well as minority charge carriers.

Description : List configurations of BJT. 

Last Answer : Configurations of BJT : 1) Common Base (CB) configuration 2) Common Emitter (CE) configuration 3) Common Collector (CC) configuration

Description : State the need of biasing of BJT.

Last Answer : Need of biasing: The basic need of transistor biasing is to keep the base-emitter (B-E) junction properly forward biased and the collector-emitter (C-E) junction properly reverse biased ... transistor biasing is necessary for normal and proper operation of transistor to be used for amplification. 

Description : Draw circuit diagram of voltage divider biasing list two advantages of voltage divider biasing of BJT.

Last Answer : Two advantages of voltage divider biasing of BJT. 1. It is very simple method of transistor biasing. 2. The biasing conditions can be very easily set. 3. there is no loading of ... 5. The resistor RE introduces a negative feedback. So all the advantages of negative feedback are obtained. 

Description : Compare BJT with FET

Last Answer : FET BJT It is unipolar device i.e. current in the device is carried either by electrons or holes It is bipolar device i.e. current in the device is carried either by ... from minority- carrier storage effects & therefore has lower switching speeds & cut-off frequencies. 

Description : Compare between BJT and FET on the basis of (i) Biolar/Unipolar (ii) Tharmal Runaway (iii) Noise (iv) Applications

Last Answer : Parameter BJT FET Bipolar/Unipolar It is bipolar device i.e. current in this device is carried by electrons and holes. It is unipolar device i.e. current ... in oscilloscopes, electronic voltmeters and other measuring and testing equipment because of their high input impedance.

Description : Which phenomenon is present in thyristors but absent in BJT, MOSFET and IGBT ? (A) forward conduction (B) latching (C) forward blocking (D) reverse breakdown

Last Answer : Which phenomenon is present in thyristors but absent in BJT, MOSFET and IGBT ? (A) forward conduction (B) latching (C) forward blocking (D) reverse breakdown

Description : An FET is a better chopper than a BJT because it has (A) lower offset voltage (B) higher series ON resistance (C) lower input current (D) higher input impedance

Last Answer : An FET is a better chopper than a BJT because it has lower offset voltage

Description : Is the input impedance of MOSFET more than BJT and FET?

Last Answer : Yes, the input impedance of MOSFET more than BJT and FET.

Description : What is a BJT?

Last Answer : Bipolar Junction Transistor (BJT): BJT is a Bipolar device. (Uses both electrons and holes charge carrier for current conduction) Two Junctions (Emitter junction & collector ... mode (Current amplification) Cutoff mode (Open switch) Saturation mode (Close switch)

Description : Explain the formation of parasitic BJT and parasitic diode in Power MOSFET. Can parasitic diode be used in same power electronics applications?

Last Answer : Parasitic Diode: The parasitic diode is in between drain and source. The MOSFET structure itself contains parasitic diode or body drain diode. This parasitic diode allows the reverse flow of current when the ... of MOSFET as a BJT collector. Parasitic BJT operates in the cut-off region.

Description : Operating frequency of power MOSFET is higher than that of power BJT. Justify the statement.

Last Answer : Power MOSFET have high turning on and turning off capability high switching speed of MOSFET is due to the high rate of change of drain voltage. The switching losses of power MOSFET ... lower frequency. Hence, operating frequency of power MOSFET is higher than that of power BJT.

Description : Compare BJT, MOSFET and IGBT .

Last Answer : BJT MOSFET IGBT BJT is a current controlled device. MOSFET is a voltage controlled device. IGBT is a voltage controlled device. The input impedance of BJT is low. ... is minority carrier device. MOSFET is majority carrier device. IGBT is minority carrier device.

Last Answer : Yes IGBT is costlier than BJT and MOSFET.

Last Answer : Yes BJT have internal capacitances.

Last Answer : BJT act as switch in saturation and  cutoff region ( ON state in saturation region and OFF state in cut-off region )

Last Answer : In cut-off region of BJT both the emitter-base junction and collector-base junction are reverse biased.

Last Answer : Active region of BJT act as amplifier.

Last Answer : Active , Saturation , Cut-off region of operations in BJT.

Last Answer : Yes BJT have second breakdown problem.

Last Answer : BJT have three terminals Base, emitter and collector.

Description : What is the value of Beta in power BJT?

Last Answer : The beta value in power BJT is 5 to 10.

Description : Explain the on state losses in power BJT.

Last Answer : On state losses in power BJT: Transistor have four types of losses one is turn on state losses second is turn off state losses third is turn on switching losses and fourth is turn ... ON = VCE sat x IC With increasing collector current collector to emitter saturation voltage increases.

Last Answer : Because it has a higher switching frequency and heat tolerance.

Last Answer : ON state losses of IGBT is less as compared to MOSFET and BJT.