Compare BJT, MOSFET and IGBT .
BJT | MOSFET | IGBT |
BJT is a current controlled device. | MOSFET is a voltage controlled device. | IGBT is a voltage controlled device. |
The input impedance of BJT is low. | The input impedance of MOSFET is high. | The input impedance of IGBT is high. |
The drive circuit of BJT is complex. | The drive circuit of MOSFET is simple. | The drive circuit of IGBT is simple. |
Switching speed of BJT is in the range of microseconds means slow switching speed. | Switching speed of MOSFET is in the range of nanoseconds means fast switching speed. | Switching speed of IGBT is more than BJT but less than MOSFET. |
BJT is the negative temperature coefficient device. | MOSFET is the positive temperature coefficient device. | IGBT shows negative temperature coefficient up to 70% after that it shows positive temperature coefficient. |
Conduction losses are low. | Conduction losses are high. | Conduction losses are low. |
Switching losses are high for high frequency. | Switching losses are low for high frequency. | Switching losses are low for high frequency. |
BJT is a bipolar device. | MOSFET is a unipolar device. | IGBT if bipolar device. |
BJT is minority carrier device. | MOSFET is majority carrier device. | IGBT is minority carrier device. |