Description : For IGBT, which of the following statement is true? (a) Switching speed of IGBT is more than bipolar transistor (b) IGBT is a current-controlled device (c) On-state collector- ... transistor (d) It combines voltage control features of MOSFET gate and high power capability of bipolar transistor
Last Answer : For IGBT, which of the following statement is true? (a) Switching speed of IGBT is more than bipolar transistor (b) IGBT is a current-controlled device (c) On-state collector- ... transistor (d) It combines voltage control features of MOSFET gate and high power capability of bipolar transistor