In the depletion region in the P-N junction there are: a) No charges b) No current c) No mobile charges d) No electron

In the depletion region in the P-N junction there are: a) No charges b) No current c) No mobile charges d) No electron
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Consider the following statements regarding the formation of P-N junctions: 1. Holes diffuse across the junction from P-side to N—side 2. The depletion layer is wiped out. 3. There is continuous flow of current across the junction 4. A barrier potential is set up across the junction Which of the above statements are correct? (a) 1 and 3 (b) 2 and 3 (c) 1 and 4 (d) 2 and 4

Description : Consider the following statements regarding the formation of P-N junctions: 1. Holes diffuse across the junction from P-side to N-side 2. The depletion layer is wiped out. 3. There is continuous flow of current across the junction 4 ... correct? (a) 1 and 3 (b) 2 and 3 (c) 1 and 4 (d) 2 and 4

Last Answer : Ans: (c) When a pn-junction is formed, there will be diffusion of carries across the junctions followed by recombination, and the creation of a depletion layer across which a ... potential is established, which will prevent further diffusion of carries across the junction, leading to equilibrium

The width of depletion layer of a P-N junction – (1) decreases with light doping (2) increases with heavy doping (3) is independent of applied voltage (4) is increased under reverse bias

Description : The width of depletion layer of a P-N junction – (1) decreases with light doping (2) increases with heavy doping (3) is independent of applied voltage (4) is increased under reverse bias

Last Answer : (4) is increased under reverse bias Explanation: The total width of the depletion region is a function of applied reverse-bias and impurity concentration. Forward bias decreases the depletion region width whilst reverse bias increases it.

The width of depletion layer of a P-N junction (1) decreases with light doping (2) increases with heavy doping (3) is independent of applied voltage (4) is increased under reverse bias

Description : The width of depletion layer of a P-N junction (1) decreases with light doping (2) increases with heavy doping (3) is independent of applied voltage (4) is increased under reverse bias

Last Answer :  is increased under reverse bias

Define i)P-N junction diode ii) Depletion layer iii)Forward bias iv)Reverse bias of P-N junction diode

Description : Define i)P-N junction diode ii) Depletion layer iii)Forward bias iv)Reverse bias of P-N junction diode

Last Answer : i)P-N junction diode: It is a semiconductor device in which half of its region is P-type and other half is N-type.  ii) Depletion layer: The region where free electrons and free holes are absent ... and negative terminal is connected to p-side of p-n junction diode, it is said to be reverse bias.

What is depletion region in PN junction?

Description : What is depletion region in PN junction?

Last Answer : The region around the junction from which the mobile charge carriers ( electrons and holes) are depleted is called as depletion region.since this region has immobile ions, which are electrically charged , the depletion region is also known as space charge region.

When a PN junction is forward biased, what happens to the depletion region?

Description : When a PN junction is forward biased, what happens to the depletion region?

Last Answer : The depletion region decreases.

Depletion region of a junction is formed _________ (a) during the manufacturing process (b) under forward bias (c) under reverse bias (d) when temperature varies

Description : Depletion region of a junction is formed _________ (a) during the manufacturing process (b) under forward bias (c) under reverse bias (d) when temperature varies

Last Answer : (a) during the manufacturing process

Define Depletion region and Barrier voltage of PN junction.

Description : Define Depletion region and Barrier voltage of PN junction.

Last Answer : 1. Depletion region : The region consisting of immobile positive charge at n-side and immobile negative charge at p-side near the junction acts like a barrier and prevents the further flow of ... charge formed at the p-n junction is called barrier voltage, barrier potential or junction barrier.

In the depletion region of a pn junction, there is a shortage of ……..

Last Answer : In the depletion region of a pn junction, there is a shortage of Holes and electrons.

Space charge region or depletion region in a P-N diode has

Description : Space charge region or depletion region in a P-N diode has (A) No charge (B) No fixed charge (C) No mobile charge (D) Both fixed and mobile charges

Last Answer : Space charge region or depletion region in a P-N diode has No mobile charge

The region consisting of holes and electrons near the p-n junction of a diode is

Description : The region consisting of holes and electrons near the p-n junction of a diode is (A) diffusion region (B) neutral zone (C) recombination region (D) depletion region 

Last Answer : The  region  consisting  of  holes  and  electrons  in a  pn  junction  is called  depletion layer.The  reason  being  both  holes  and  electrons have neutrolyzed at the  junction  thus  it  is depleated  with  delocalized  charge  carriers.

In the illustrated amplifier, the base of the transistor is what type of material? EL-0022 A. N type B. P type C. metal oxide insulator D. alloy junction material

Description : In the illustrated amplifier, the base of the transistor is what type of material? EL-0022 A. N type B. P type C. metal oxide insulator D. alloy junction material

Last Answer : Answer: A

In the reverse biased p-n junction, the current is of the order of (a) Ampere (b) Milliampere (c) Microampere (d) Nano-ampere

Description : In the reverse biased p-n junction, the current is of the order of (a) Ampere (b) Milliampere (c) Microampere (d) Nano-ampere

Last Answer : (d) Nano-ampere

On increasing the reverse bias to a large value in a p-n junction diode current (a) Increases slowly (b) Remains fixed (c) Suddenly increases (d) Decreases slowly

Description : On increasing the reverse bias to a large value in a p-n junction diode current (a) Increases slowly (b) Remains fixed (c) Suddenly increases (d) Decreases slowly

Last Answer : (c) Suddenly increases

Barrier potential in a P-N junction is caused by (A) Thermally generated electrons and holes. (B) Diffusion of majority carriers across the junction. (C) Migration of minority carriers across the junction. (D) Flow of drift current.

Description : Barrier potential in a P-N junction is caused by (A) Thermally generated electrons and holes. (B) Diffusion of majority carriers across the junction. (C) Migration of minority carriers across the junction. (D) Flow of drift current.

Last Answer : (B) Diffusion of majority carriers across the junction.

With forward bias to a pn junction , the width of depletion layer ………

Last Answer : With forward bias to a pn junction , the width of depletion layer Decreases.

When two semiconductors of p-and ntype are brought in contact, they form p-n junction which acts like a/an – (1) Conductor (2) Oscillator (3) Rectifier (4) Amplifier

Description : When two semiconductors of p-and ntype are brought in contact, they form p-n junction which acts like a/an – (1) Conductor (2) Oscillator (3) Rectifier (4) Amplifier

Last Answer : (3) Rectifier Explanation: P-n junction is a device which flows current in one direction when it is forward biased and when it is reverse biased it doesn't flow any current through it. So it ... (AC), which periodically reverses direction, to direct current (DC), which flows in only one direction.

The waveform of a certain signal can be studied by – (1) Spectrometer (2) Cathode ray oscilloscope (3) p - n junction diode (4) Sonometer

Description : The waveform of a certain signal can be studied by – (1) Spectrometer (2) Cathode ray oscilloscope (3) p - n junction diode (4) Sonometer

Last Answer : (4) Sonometer Explanation: A spectrometer is an instrument used to measure properties of light over a specific portion of the electromagnetic spectrum. Cathode ray oscilloscope is an electronic display ... electron beam that is used to produce visible patterns or graphs on a phosphorescent screen.

When is a p-n junction said to be forward biased or what is meant by forward biasing of p-n junction? How does it affect resistance?

Description : When is a p-n junction said to be forward biased or what is meant by forward biasing of p-n junction? How does it affect resistance?

Last Answer : When the positive terminal of a cell is connected to p-side and negative terminal to the n-side of a p-n junction then it is said to be forward biased. It offers low resistance.

When is a p-n junction said to be biased?

Description : When is a p-n junction said to be biased?

Last Answer : When an external source of e.m.f is connected to a p-n junction, it is said to be biased.

What is a p-n junction?

Description : What is a p-n junction?

Last Answer : The junction that is obtained when a p-type semiconductor and an n-type semiconductor are kept in contact is called p-n junction.

Why gold is added to the p-n junction?

Description : Why gold is added to the p-n junction?

Last Answer : Ans-To reflect heat. To reduce the recombination time.

P-n junction when reversed biased acts as a (a) Capacitor (b) inductor (c) on switch (d) off switch

Description : P-n junction when reversed biased acts as a (a) Capacitor (b) inductor (c) on switch (d) off switch

Last Answer : d) off switch

Which is the most important building block of electronic devices? (a) Diode (b) p-n junction (c) transistor (d) rectifier

Description : Which is the most important building block of electronic devices? (a) Diode (b) p-n junction (c) transistor (d) rectifier

Last Answer : b) p-n junction

A transistor has (A) One p-n junction. (B) Two p-n junction. (C) Four p-n junction. (D) Five p-n junction.

Description : A transistor has (A) One p-n junction. (B) Two p-n junction. (C) Four p-n junction. (D) Five p-n junction.

Last Answer : (B) Two p-n junction.

P-N junction is (A) a rectifier. (B) an amplifier. (C) an Oscillator. (D) a Coupler.

Description : P-N junction is (A) a rectifier. (B) an amplifier. (C) an Oscillator. (D) a Coupler.

Last Answer : (A) a rectifier.

List four specifications of zener diode or P- N junction diode.

Description : List four specifications of zener diode or P- N junction diode.

Last Answer : Specifications of zener diode: 1. Zener voltage 2. Power dissipation 3. Maximum power dissipation PD(max) 4. Breakdown current 5. Dynamic resistance 6. Maximum reverse current. (OR) ... Reverse saturation current 5. Power dissipation 6. Junction temperature 7. Peak inverse voltage (PIV)

Write two applications of P-N junction diode and zener diode.

Description : Write two applications of P-N junction diode and zener diode. 

Last Answer : Application of P-N junction diode: Used in rectifier circuit Used in clipping and clamping circuit. Used for A.M detection Used for voltage multiplier. Application of Zener diode: It is ... . Used in protection circuits for MOSFET. Used in pulse amplifier. Used in clipping circuits.

Draw and explain V-I characteristics of a P-N junction diode.

Description : Draw and explain V-I characteristics of a P-N junction diode.

Last Answer : V-I Characteristics of a P-N junction: V-I characteristics of a Diode: The V-I characteristics can be divided in two parts. 1. Forward characteristics. 2. Reverse ... plot a graph with reverse voltage on horizontal axis and current on vertical axis, we obtain reverse characteristics.

Compare P-N junction and Zener Diode.

Description : Compare P-N junction and Zener Diode.

Last Answer : P-N junction Zener Diode It conducts in only in one direction.  It conducts in both the directions. It is always operated in forward bias condition. It is always operated in ... . It cannot be used for rectification, but commonly used for voltage regulation

Draw V-I characteristics of p-n junction diode? Define static and dynamic resistance of diode.

Description : Draw V-I characteristics of p-n junction diode? Define static and dynamic resistance of diode.

Last Answer : Static Resistance: The resistance offered by a p-n junction diode when it is connected to a DC circuit is called static resistance.  (OR) It is the ratio of DC voltage applied across diode ... The dynamic resistance of a diode is the ratio of change in voltage to the change in current. 

A semiconductor device made up of a single p-n Junction is called a: w) transistor x) diode y) Fet z) integrated circuit

Description : A semiconductor device made up of a single p-n Junction is called a: w) transistor x) diode y) Fet z) integrated circuit

Last Answer : ANSWER: X -- DIODE

When two semiconductors of pand n-type are brought in contact, they form p-n junction which acts like a/an (1) Conductor (2) Oscillator (3) Rectifier (4) Amplifier

Description : When two semiconductors of pand n-type are brought in contact, they form p-n junction which acts like a/an (1) Conductor (2) Oscillator (3) Rectifier (4) Amplifier

Last Answer : Rectifier

The waveform of a certain signal can be studied by (1) Spectrometer (2) Cathode ray oscilloscope (3) p – n junction diode (4) Sonometer

Description : The waveform of a certain signal can be studied by (1) Spectrometer (2) Cathode ray oscilloscope (3) p – n junction diode (4) Sonometer

Last Answer : Sonometer

applications of P-N junction diode

Description :  applications of P-N junction diode

Last Answer : 1.It is used as rectifier in DC power supply 2.It is used as free wheel diode across relay or inductive load 3.It is used as switch in logic circuits used in computers 4.It is used as detector in demodulation circuits of communication receiver 

What is p n junction

Last Answer : It is a sandwich of p type and n type semiconductor 

Explain the forward bias characteristics of a P-N Junction diode.

Description : Explain the forward bias characteristics of a P-N Junction diode. 

Last Answer : forward and reverse characteristics of P-N junction diode.

Barrier potential in a P-N junction is caused by

Description : Barrier potential in a P-N junction is caused by   (A) thermally generated electrons and holes (B) diffusion of majority carriers across the junction (C) migration of minority carriers across the junction (D) flow of drift current.

Last Answer : Barrier potential in a P-N junction is caused by migration of minority carriers across the junction

In a tunnel diode, electrons can tunnel through the P-N junction mainly because

Description : In a tunnel diode, electrons can tunnel through the P-N junction mainly because  1.impurity level is low 2.they have high energy 3.barrier potential is very low 4.depletion layer is extremely thin 

Last Answer : In a tunnel diode, electrons can tunnel through the P-N junction mainly because depletion layer is extremely thin 

When a P - N junction is forward biased

Description : When a P - N junction is forward biased  1.only electrons in N-region are injected into P-region 2.only holes in P-region are injected into N-region 3.majority carriers in each region are injected into the other region 4.minority current is reduced to zero 

Last Answer : When a P - N junction is forward biased majority carriers in each region are injected into the other region 

The potential barrier at a P - N junction is due to

Description : The potential barrier at a P - N junction is due to  1. Majority carriers 2. Minority carriers 3. Both majority and minority carriers 4. Fixed donor and acceptor ions 

Last Answer : The potential barrier at a P - N junction is due to Fixed donor and acceptor ions 

The capacitance of reverse biased P-N junction

Description : The capacitance of reverse biased P-N junction  1. Decreases with increasing the reverse bias 2. Increases with increasing the reverse bias 3. Depends only on reverse saturation current 4. Makes the P-N junction more effective at high frequencies 

Last Answer : The capacitance of reverse biased P-N junction Decreases with increasing the reverse bias

In a PN-junction with open circuit terminal (equilibrium), with P doping higher as compared to N

Description : In a PN-junction with open circuit terminal (equilibrium), with P doping higher as compared to N doping (A) N-side depletion region is small as compared to p-side depletion region (B) N-side ... depletion region (C) N-side depletion region is same as p-side depletion region (D) Cannot say

Last Answer : In a PN-junction with open circuit terminal (equilibrium), with P doping higher as compared to N doping N-side depletion region is small as compared to p-side depletion region

P-N junction is....

Description : P-N junction is  A) a rectifier B) an amplifier C) an oscillator  D) a coupler

Last Answer : P-N junction is a rectifier.

p-n Junction Diode

Description : Distributed under Creative Commons Attribution-ShareAlike - CC BY-SA.

Last Answer : Lecture -1: p-n Junction Diode Diode: A pure silicon crystal or germanium crystal is known as an intrinsic semiconductor. There are not enough free electrons and holes in an intrinsic ... . Therefore, there is a flow of carriers and thus flow of current. IIT ROORKEE

Depletion region carries _________ (a) +ve charge (b) –ve charge (c) no charge (d) all of above

Description : Depletion region carries _________ (a) +ve charge (b) –ve charge (c) no charge (d) all of above

Last Answer : (c) no charge

If He charges 17.95 for each CD and his expenses include 1250 for duplicating equipment and 0.65 for each blank CD which equation shows the profit (p) for selling n CD's?

Description : If He charges 17.95 for each CD and his expenses include 1250 for duplicating equipment and 0.65 for each blank CD which equation shows the profit (p) for selling n CD's?

Last Answer : What is the answer ?

Which of the following actions can be carried out in order to prevent thermal runaway in a transistor? A. Increase the current through the collector-base junction. B. Install a heat sink. C. Shift the 'Q' point to increase collector current. D. Increase the potential difference between the emitter and the base.

Description : Which of the following actions can be carried out in order to prevent thermal runaway in a transistor? A. Increase the current through the collector-base junction. B. Install a heat sink. ... point to increase collector current. D. Increase the potential difference between the emitter and the base.

Last Answer : Answer: B

Electric cables are formed of stranded wire to ____________. A. increase the current carrying capability for a given size wire B. increase their flexibility C. decrease the weight for a given size wire D. assure good conductivity at junction points

Description : Electric cables are formed of stranded wire to ____________. A. increase the current carrying capability for a given size wire B. increase their flexibility C. decrease the weight for a given size wire D. assure good conductivity at junction points

Last Answer : Answer: B

How depletion region get thin by increasing doping level in a zener diode?

Description : How depletion region get thin by increasing doping level in a zener diode?

Last Answer : Doping is a process of mixing sum impurity in a iinsulator andthen that acts like conductor...The materials which are said tobehave like this are called semi conductor . it is very often toknow ... theDepletion region remains there but it never ends....i-e depletionregion can not be removed finally