# What is the Q point of a BJT?

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Q pointit is nothing but operating point of transistor which can gives the information about the transistor working in active cutoff or saturation region to the Faithful amplification we have to specified the position of q. Biasing transistor biasing the proper flow of zero signal collector current and the maintenance of proper collector emitter voltage during the passage of signal is known as transistor biasing

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Last Answer : Because the output (collector) current can be controlled by base current. why the bjt is known as current controlled device and fet is known as voltage controlled device ?
Last Answer : Ans- 1. In BJT because of the current the output will vary. 2. Where as in FET by means of Voltage the output is varied. Which is the most suitable power device for high frequency ( more 100 kHz) switching application? a) Power MOSFET b) BJT c) SCR d) UJT
Last Answer : Ans: Power MOSFET A modern power semiconductor device IGBT is combines the characteristics of a) BJT and MOSFET b) FCT and GTO c) SCR and MOSFET d) SCR and BJT
Last Answer : Ans: BJT and MOSFET Draw the output characteristics of BJT in CE configuration and label various regions on it.
Last Answer :  output characteristics of BJT in CE configuration State the applications of BJT.
Last Answer : Applications of BJT: 1. As a switch 2. As an amplifier 3. As a multivibrator 4. As a oscillator 5. As a timer circuit 6. As a Logic circuits 7. Delay circuits Draw the construction of BJT (NPN) and explain its working principle. State and explain different operating regions.
Last Answer : Construction of BJT (NPN): Working of NPN Transistor : The circuit diagram of the NPN transistor is shown in the figure below. The forward biased is applied across the emitter-base ... Zero with input current is Zero transistor in cut off. In this region transistor act as open switch Define the following with respect to BJT. (i) Input resistance (ii) Output resistance
Last Answer : Input resistance: It is the ratio of small change in emitter -to-base voltage(∆VEB) to the resulting change in emitter current (∆IE) for a constant collector to base voltage(VCB) ... of BJT is ratio of voltage between output terminal and common terminal to current through output terminal. State 2 advantages of JFET over BJT.
Last Answer : Advantages of JFET over BJT: 1) High input impedance 2) Better thermal stability 3) Produce less noise 4) Smaller than BJT 5) Rugged in construction and simpler to fabricate 6) High degree of isolation between Input and Output. Name two types of BJT &draw their symbols.
Last Answer : Two types of BJT: * NPN * PNP List the types of coupling used in BJT amplifier.
Last Answer : Types of coupling used in BJT amplifier: i. Resistance capacitance (RC)coupling ii. Impedance coupling iii. Transformer coupling iv. Direct coupling Comparison of three configuration of BJT
Last Answer : Parameter Common Base(CB) Common Emitter (CE) Common collector (CC) Input terminal  Emitter Base Base Common terminal Base Emitter Collector Output terminal Collector Collector Emitter Gain factor Alpha(Ic/Ie) Beta(Ic/Ib) Gamma(Ie/Ib) Comparison of BJT and FET
Last Answer : FET BJT It is unipolar device i.e. current in the device is carried either by electrons or holes It is bipolar device i.e. current in the device is carried either by both ... is comparatively more noisy. It is relatively immune to radiation. It is susceptible to radiation Draw circuit diagram of two stage RC coupled amplifier using BJT
Last Answer : BJT - To amplify input signal. R1 & R2 = Biasing resistor to provide DC biasing voltage RE = Emitter resistor to control gain RL = Load resistor to carry load current Cin = Cout = Coupling capacitors to block DC CE = emitter bypass resistor Draw symbol of NPN transistor and state three configurations of transistor (BJT)
Last Answer : Configuration - Common Emitter Common Collector Common Base List specification of BJT.
Last Answer : * The bipolar junction transistor (BJT) has small signal current gain, α (hfb). * Maximum collector current Ic (max). * Maximum collector to emitter voltage, VCE (max). * Collector to emitter ... . * Collector to emitter cut off voltage, VCEO. * Base emitter saturation voltage, VBE (sat). State reason BJT is called as bipolar junction transistor.
Last Answer : BJT is called bipolar junction transistor because in BJT current conduction takes place due to majority as well as minority charge carriers. Identify type of BJT configuration having following features : (i) BJT configuration having the least current gain. (ii) KIT configuration called as voltage follower. (iii) BJT ... configuration suitable for voltage amplification. (vi) BJT configuration having the least output impedance.
Last Answer : (i) BJT configuration having the least current gain : Common Base Configuration  (ii) KIT configuration called as voltage follower: Common Collector Configuration  (iii) BJT ... Emitter Configuration  (vi) BJT configuration having the least output impedance: Common Collector Configuration List configurations of BJT.
Last Answer : Configurations of BJT : 1) Common Base (CB) configuration 2) Common Emitter (CE) configuration 3) Common Collector (CC) configuration State the need of biasing of BJT.
Last Answer : Need of biasing: The basic need of transistor biasing is to keep the base-emitter (B-E) junction properly forward biased and the collector-emitter (C-E) junction properly reverse biased ... transistor biasing is necessary for normal and proper operation of transistor to be used for amplification. Draw circuit diagram of voltage divider biasing list two advantages of voltage divider biasing of BJT.
Last Answer : Two advantages of voltage divider biasing of BJT. 1. It is very simple method of transistor biasing. 2. The biasing conditions can be very easily set. 3. there is no loading of ... 5. The resistor RE introduces a negative feedback. So all the advantages of negative feedback are obtained. Compare BJT with FET
Last Answer : FET BJT It is unipolar device i.e. current in the device is carried either by electrons or holes It is bipolar device i.e. current in the device is carried either by ... from minority- carrier storage effects & therefore has lower switching speeds & cut-off frequencies. Compare between BJT and FET on the basis of (i) Biolar/Unipolar (ii) Tharmal Runaway (iii) Noise (iv) Applications
Last Answer : Parameter BJT FET Bipolar/Unipolar It is bipolar device i.e. current in this device is carried by electrons and holes. It is unipolar device i.e. current ... in oscilloscopes, electronic voltmeters and other measuring and testing equipment because of their high input impedance. Compare BJT common base configuration with common collector configuration on the basis of (i) Current gain (ii) Voltage gain (iii) Input impedance (iv) Output impedance
Last Answer : Parameter Common Base Common Collector Current gain Low (About 1) High (1+β) Voltage gain High 1  Input impedance  Low High Output impedance High Low If the base current of a BJT is 250 µA and emitter current is 15 mA, then the common base current gain will be A) 0.98 B) 0.41 C) 59 D) 55
Last Answer :  If the base current of a BJT is 250 µA and emitter current is 15 mA, then the common base current gain will be 0.98 In a BJT circuit a pnp transistor is replaced by npn transistor. To analyse the new circuit (1) All calculations done earlier have to be repeated (2) Replace all calculated voltages by ... all calculated currents by reverse values (4) Replace all calculated voltages and currents by reverse values
Last Answer : In a BJT circuit a pnp transistor is replaced by npn transistor. To analyse the new circuit  Replace all calculated voltages and currents by reverse values A bipolar junction transistor (BJT) is used as a power control switch by biasing it in the cut-off region (OFF state) or in the saturation region (ON state). In the ON state, for ... base-collector junction is reverse biased (D) both the base-emitter and base-collector junctions are forward biased
Last Answer : A BJT is as a power control switch by biasing it in cut-off region (OFF state) or in the saturation region (ON state). In  ON state, for BJT both the base-emitter and base- collector junctions are forward biased As compared to power MOSFET, a BJT has  (a) Lower switching losses but higher conduction losses (b) Higher switching losses and higher conduction losses (c) Higher switching losses but lower conduction losses (d) Lower switching losses and lower conduction losses.
Last Answer : As compared to power MOSFET, a BJT has Higher switching losses but lower conduction losses For the active mode BJT operation (A) Emitter Base Junction is Forward Biased and Collector Base Junction is Forward Biased (B) Emitter Base Junction is Reverse Biased and Collector Base Junction ... Biased (D) Emitter Base Junction is Reverse Biased and Collector Base Junction is Forward Biased
Last Answer : For the active mode BJT operation Emitter Base Junction is Forward Biased and Collector Base Junction is Reverse Biased. In BJT, the common emitter gain β is (A) desired to have large value (B) desired to have small value (C) desired to have moderate value (D) the value need not be controlled
Last Answer : In BJT, the common emitter gain β is desired to have large value.  β is the Current gain factor also called transport factor. What is an emitter follower BJT circuit ? (A) Common Collector Amplifier (B) Common Emitter Amplifier (C) Common Base Amplifier (D) None of the above
Last Answer : What is an emitter follower BJT circuit ? (A) Common Collector Amplifier (B) Common Emitter Amplifier (C) Common Base Amplifier (D) None of the above In BJT circuits, bulk of the gain is provided by (A) CE configuration (B) CB configuration (C) CC configuration (D) It is not certain
Last Answer : In BJT circuits, bulk of the gain is provided by CE configuration Which phenomenon is present in thyristors but absent in BJT, MOSFET and IGBT ? (A) forward conduction (B) latching (C) forward blocking (D) reverse breakdown
Last Answer : Which phenomenon is present in thyristors but absent in BJT, MOSFET and IGBT ? (A) forward conduction (B) latching (C) forward blocking (D) reverse breakdown An FET is a better chopper than a BJT because it has (A) lower offset voltage (B) higher series ON resistance (C) lower input current (D) higher input impedance
Last Answer : An FET is a better chopper than a BJT because it has lower offset voltage The second break down in power BJT occurs due to (a) The first break down and the formation of hot spot inside (b) excessive collector current and low collector emitter voltage (c) excessive base current and high collector emitter voltage (d) none of thee above FET is advantageous in comparison with BJT because of  A) High input impedance B) High noise C) High gain bandwidth product D) Its current controlled behavior Compared to MOSFET operational amplifier, BJT operational amplifier has  A) Higher input resistance B) Higher slew rate C) Lower input current D) Higher voltage gain What are the main constructional differences between a MOSFET and a BJT? What effect do they have on the current conduction mechanism of a MOSFET?
Last Answer : A MOSFET like a BJT has alternating layers of p and n type semiconductors. However, unlike BJT the p type body region of a MOSFET does not have an external electrical connection. The gate ... .  Distributed under Creative Commons Attribution-ShareAlike - CC BY-SA. Version 2 EE IIT, Kharagpur What is the difference between BJT and FET?
Last Answer : BJT  is  a  current  opperated   transistor  while  FET   is  a  field   opperated  transistor. What is a BJT amplifier?
Last Answer : Bilpolar Juntion transistor , this fuction is control the current How can BJT be used as an amplifier? 