1 Answer

Answer :

Q pointit is nothing but operating point of transistor which can gives the information about the transistor working in active cutoff or saturation region to the Faithful amplification we have to specified the position of q. Biasing transistor biasing the proper flow of zero signal collector current and the maintenance of proper collector emitter voltage during the passage of signal is known as transistor biasing

Related questions

Last Answer : It is an operating point of transistor.which gives the information of transistor In which region is working

Last Answer : The operating point of devices is known as Q point (quiescent point) Q point are the values of voltages and currents of a circuit when no signal is present.

Last Answer : it is the kircjohoffs Voltage law it can be defined as stated that the summation of applied voltage in loop which follows Ohm's law is equal to the voltage drop in the circuit

Last Answer : as we knowthat capacitor only allow AC current Rs components grounded that components which are coming in the DC form we have to use capacitor capacitor only pass the AC components which have to be amplifier

Last Answer : the RC coupled amplifier are using the following applications first in public address amplifier system  tape recorders TV VCR and CD players stereo amplifier  and these are the voltage amplification amplifiers

Last Answer : the main components of the circuit are as follows register capacitor an inductor and the supply voltage our current source.

Description : The seven segment arrangement for numerical display on consoles, test meters and other applications can be either ________________. A. UJT or BJT B. BCD or OCD C. JFET or IGFET D. LED or LCD

Last Answer : Answer: D

Description : Power BJT is a current controlled device. Why?

Last Answer : Because the output (collector) current can be controlled by base current.

Description : why the bjt is known as current controlled device and fet is known as voltage controlled device ?

Last Answer : Ans- 1. In BJT because of the current the output will vary. 2. Where as in FET by means of Voltage the output is varied.

Description : Which is the most suitable power device for high frequency ( more 100 kHz) switching application? a) Power MOSFET b) BJT c) SCR d) UJT

Last Answer : Ans: Power MOSFET

Description : A modern power semiconductor device IGBT is combines the characteristics of a) BJT and MOSFET b) FCT and GTO c) SCR and MOSFET d) SCR and BJT

Last Answer : Ans: BJT and MOSFET

Description : Draw the output characteristics of BJT in CE configuration and label various regions on it.

Last Answer :  output characteristics of BJT in CE configuration 

Description : State the applications of BJT.

Last Answer : Applications of BJT: 1. As a switch 2. As an amplifier 3. As a multivibrator 4. As a oscillator 5. As a timer circuit 6. As a Logic circuits 7. Delay circuits

Description : Draw the construction of BJT (NPN) and explain its working principle. State and explain different operating regions.

Last Answer : Construction of BJT (NPN): Working of NPN Transistor : The circuit diagram of the NPN transistor is shown in the figure below. The forward biased is applied across the emitter-base ... Zero with input current is Zero transistor in cut off. In this region transistor act as open switch

Description : Define the following with respect to BJT. (i) Input resistance (ii) Output resistance

Last Answer : Input resistance: It is the ratio of small change in emitter -to-base voltage(∆VEB) to the resulting change in emitter current (∆IE) for a constant collector to base voltage(VCB) ... of BJT is ratio of voltage between output terminal and common terminal to current through output terminal. 

Description : State 2 advantages of JFET over BJT.

Last Answer : Advantages of JFET over BJT: 1) High input impedance 2) Better thermal stability 3) Produce less noise 4) Smaller than BJT 5) Rugged in construction and simpler to fabricate 6) High degree of isolation between Input and Output. 

Description : Name two types of BJT &draw their symbols. 

Last Answer : Two types of BJT: * NPN * PNP 

Description : List the types of coupling used in BJT amplifier. 

Last Answer : Types of coupling used in BJT amplifier: i. Resistance capacitance (RC)coupling ii. Impedance coupling iii. Transformer coupling iv. Direct coupling

Description : Comparison of three configuration of BJT

Last Answer : Parameter Common Base(CB) Common Emitter (CE) Common collector (CC) Input terminal  Emitter Base Base Common terminal Base Emitter Collector Output terminal Collector Collector Emitter Gain factor Alpha(Ic/Ie) Beta(Ic/Ib) Gamma(Ie/Ib)

Description : Comparison of BJT and FET

Last Answer : FET BJT It is unipolar device i.e. current in the device is carried either by electrons or holes It is bipolar device i.e. current in the device is carried either by both ... is comparatively more noisy. It is relatively immune to radiation. It is susceptible to radiation

Description : Draw circuit diagram of two stage RC coupled amplifier using BJT

Last Answer : BJT - To amplify input signal. R1 & R2 = Biasing resistor to provide DC biasing voltage RE = Emitter resistor to control gain RL = Load resistor to carry load current Cin = Cout = Coupling capacitors to block DC CE = emitter bypass resistor

Description : Draw symbol of NPN transistor and state three configurations of transistor (BJT)

Last Answer : Configuration - Common Emitter Common Collector Common Base

Description : List specification of BJT.

Last Answer : * The bipolar junction transistor (BJT) has small signal current gain, α (hfb). * Maximum collector current Ic (max). * Maximum collector to emitter voltage, VCE (max). * Collector to emitter ... . * Collector to emitter cut off voltage, VCEO. * Base emitter saturation voltage, VBE (sat).

Description : State reason BJT is called as bipolar junction transistor.

Last Answer : BJT is called bipolar junction transistor because in BJT current conduction takes place due to majority as well as minority charge carriers.

Description : Identify type of BJT configuration having following features : (i) BJT configuration having the least current gain. (ii) KIT configuration called as voltage follower. (iii) BJT ... configuration suitable for voltage amplification. (vi) BJT configuration having the least output impedance.  

Last Answer : (i) BJT configuration having the least current gain : Common Base Configuration  (ii) KIT configuration called as voltage follower: Common Collector Configuration  (iii) BJT ... Emitter Configuration  (vi) BJT configuration having the least output impedance: Common Collector Configuration

Description : List configurations of BJT. 

Last Answer : Configurations of BJT : 1) Common Base (CB) configuration 2) Common Emitter (CE) configuration 3) Common Collector (CC) configuration

Description : State the need of biasing of BJT.

Last Answer : Need of biasing: The basic need of transistor biasing is to keep the base-emitter (B-E) junction properly forward biased and the collector-emitter (C-E) junction properly reverse biased ... transistor biasing is necessary for normal and proper operation of transistor to be used for amplification. 

Description : Draw circuit diagram of voltage divider biasing list two advantages of voltage divider biasing of BJT.

Last Answer : Two advantages of voltage divider biasing of BJT. 1. It is very simple method of transistor biasing. 2. The biasing conditions can be very easily set. 3. there is no loading of ... 5. The resistor RE introduces a negative feedback. So all the advantages of negative feedback are obtained. 

Description : Compare BJT with FET

Last Answer : FET BJT It is unipolar device i.e. current in the device is carried either by electrons or holes It is bipolar device i.e. current in the device is carried either by ... from minority- carrier storage effects & therefore has lower switching speeds & cut-off frequencies. 

Description : Compare between BJT and FET on the basis of (i) Biolar/Unipolar (ii) Tharmal Runaway (iii) Noise (iv) Applications

Last Answer : Parameter BJT FET Bipolar/Unipolar It is bipolar device i.e. current in this device is carried by electrons and holes. It is unipolar device i.e. current ... in oscilloscopes, electronic voltmeters and other measuring and testing equipment because of their high input impedance.

Description : Compare BJT common base configuration with common collector configuration on the basis of (i) Current gain (ii) Voltage gain (iii) Input impedance (iv) Output impedance

Last Answer : Parameter Common Base Common Collector Current gain Low (About 1) High (1+β) Voltage gain High 1  Input impedance  Low High Output impedance High Low

Description :  If the base current of a BJT is 250 µA and emitter current is 15 mA, then the common base current gain will be A) 0.98 B) 0.41 C) 59 D) 55  

Last Answer :  If the base current of a BJT is 250 µA and emitter current is 15 mA, then the common base current gain will be 0.98 

Description : In a BJT circuit a pnp transistor is replaced by npn transistor. To analyse the new circuit (1) All calculations done earlier have to be repeated (2) Replace all calculated voltages by ... all calculated currents by reverse values (4) Replace all calculated voltages and currents by reverse values 

Last Answer : In a BJT circuit a pnp transistor is replaced by npn transistor. To analyse the new circuit  Replace all calculated voltages and currents by reverse values 

Description : A bipolar junction transistor (BJT) is used as a power control switch by biasing it in the cut-off region (OFF state) or in the saturation region (ON state). In the ON state, for ... base-collector junction is reverse biased (D) both the base-emitter and base-collector junctions are forward biased

Last Answer : A BJT is as a power control switch by biasing it in cut-off region (OFF state) or in the saturation region (ON state). In  ON state, for BJT both the base-emitter and base- collector junctions are forward biased

Description : As compared to power MOSFET, a BJT has  (a) Lower switching losses but higher conduction losses (b) Higher switching losses and higher conduction losses (c) Higher switching losses but lower conduction losses (d) Lower switching losses and lower conduction losses. 

Last Answer : As compared to power MOSFET, a BJT has Higher switching losses but lower conduction losses 

Description : For the active mode BJT operation (A) Emitter Base Junction is Forward Biased and Collector Base Junction is Forward Biased (B) Emitter Base Junction is Reverse Biased and Collector Base Junction ... Biased (D) Emitter Base Junction is Reverse Biased and Collector Base Junction is Forward Biased

Last Answer : For the active mode BJT operation Emitter Base Junction is Forward Biased and Collector Base Junction is Reverse Biased.

Description : In BJT, the common emitter gain β is (A) desired to have large value (B) desired to have small value (C) desired to have moderate value (D) the value need not be controlled

Last Answer : In BJT, the common emitter gain β is desired to have large value.  β is the Current gain factor also called transport factor. 

Description : What is an emitter follower BJT circuit ? (A) Common Collector Amplifier (B) Common Emitter Amplifier (C) Common Base Amplifier (D) None of the above

Last Answer : What is an emitter follower BJT circuit ? (A) Common Collector Amplifier (B) Common Emitter Amplifier (C) Common Base Amplifier (D) None of the above

Description : In BJT circuits, bulk of the gain is provided by (A) CE configuration (B) CB configuration (C) CC configuration (D) It is not certain

Last Answer : In BJT circuits, bulk of the gain is provided by CE configuration

Description : Which phenomenon is present in thyristors but absent in BJT, MOSFET and IGBT ? (A) forward conduction (B) latching (C) forward blocking (D) reverse breakdown

Last Answer : Which phenomenon is present in thyristors but absent in BJT, MOSFET and IGBT ? (A) forward conduction (B) latching (C) forward blocking (D) reverse breakdown

Description : An FET is a better chopper than a BJT because it has (A) lower offset voltage (B) higher series ON resistance (C) lower input current (D) higher input impedance

Last Answer : An FET is a better chopper than a BJT because it has lower offset voltage

Description : What are the main constructional differences between a MOSFET and a BJT? What effect do they have on the current conduction mechanism of a MOSFET? 

Last Answer : A MOSFET like a BJT has alternating layers of p and n type semiconductors. However, unlike BJT the p type body region of a MOSFET does not have an external electrical connection. The gate ... .  Distributed under Creative Commons Attribution-ShareAlike - CC BY-SA. Version 2 EE IIT, Kharagpur

Description : What is the difference between BJT and FET?

Last Answer : BJT  is  a  current  opperated   transistor  while  FET   is  a  field   opperated  transistor.

Description : What is a BJT amplifier?

Last Answer : Bilpolar Juntion transistor , this fuction is control the current

Description : Is the input impedance of MOSFET more than BJT and FET?

Last Answer : Yes, the input impedance of MOSFET more than BJT and FET.

Description : What is a BJT?

Last Answer : Bipolar Junction Transistor (BJT): BJT is a Bipolar device. (Uses both electrons and holes charge carrier for current conduction) Two Junctions (Emitter junction & collector ... mode (Current amplification) Cutoff mode (Open switch) Saturation mode (Close switch)

Description : Explain open emitter BJT drive circuit.

Last Answer : open emitter BJT drive circuit:

Description : Explain the formation of parasitic BJT and parasitic diode in Power MOSFET. Can parasitic diode be used in same power electronics applications?

Last Answer : Parasitic Diode: The parasitic diode is in between drain and source. The MOSFET structure itself contains parasitic diode or body drain diode. This parasitic diode allows the reverse flow of current when the ... of MOSFET as a BJT collector. Parasitic BJT operates in the cut-off region.

Description : Operating frequency of power MOSFET is higher than that of power BJT. Justify the statement.

Last Answer : Power MOSFET have high turning on and turning off capability high switching speed of MOSFET is due to the high rate of change of drain voltage. The switching losses of power MOSFET ... lower frequency. Hence, operating frequency of power MOSFET is higher than that of power BJT.

Description : Is BJT unipolar or bipolar Why?

Last Answer : Bipolar Junction Transistor (BJT) is a bipolar device because current is carried by both holes and electrons hence it is called bipolar.