Explain the formation of parasitic BJT and parasitic diode in Power MOSFET.

🏠 Home⇦ Prev QuestionNext Question ⇨
Explain the formation of parasitic BJT and parasitic diode in Power MOSFET. Can parasitic diode be used in same power electronics applications?
Request Answer
by

1 Answer

Answer :

Parasitic Diode:

The parasitic diode is in between drain and source. The MOSFET structure itself contains parasitic diode or body drain diode. This parasitic diode allows the reverse flow of current when the MOSFET is in off state. The figure shows the internal parasitic diode. This parasitic diode have slow switching characteristics as compare to MOSFET channel. The integral diode have slow reverse recovery characteristics. In parasitic diode, drain acts as cathode and source acts as the anode. The integral diode have pn-n+.


image


Use of parasitic diode:

This parasitic diode is useful in the flow of reverse current in the inverter with an inductive load.


image


Parasitic BJT:

MOSFET structure also have parasitic BJT. The figure shows parasitic BJT. The n-channel MOSFET will have npn parasitic transistor. The body region of MOSFET acts as the base of BJT, the source of MOSFET acts as an emitter, the drain of MOSFET as a BJT collector. Parasitic BJT operates in the cut-off region.

image

Like 0 like
by

Please log in or register to answer this question.

Related Questions

Operating frequency of power MOSFET is higher than that of power BJT. Justify the statement.
Operating frequency of power MOSFET is higher than that of power BJT. Justify the statement.
Last Answer : Power MOSFET have high turning on and turning off capability high switching speed of MOSFET is due to the high rate of change of drain voltage. The switching losses of power MOSFET ... lower frequency. Hence, operating frequency of power MOSFET is higher than that of power BJT. Show Answer
Which phenomenon is present in thyristors but absent in BJT, MOSFET and IGBT ?
Which phenomenon is present in thyristors but absent in BJT, MOSFET and IGBT ? (A) forward conduction (B) latching (C) forward blocking (D) reverse breakdown
Last Answer : Which phenomenon is present in thyristors but absent in BJT, MOSFET and IGBT ? (A) forward conduction (B) latching (C) forward blocking (D) reverse breakdown Show Answer
Compare BJT, MOSFET and IGBT .
Compare BJT, MOSFET and IGBT .
Last Answer : BJT MOSFET IGBT BJT is a current controlled device. MOSFET is a voltage controlled device. IGBT is a voltage controlled device. The input impedance of BJT is low. ... is minority carrier device. MOSFET is majority carrier device. IGBT is minority carrier device. Show Answer
why igbt is used instead of bjt and mosfet?

Last Answer : ON state losses of IGBT is less as compared to MOSFET and BJT. Show Answer
Open in App