Is the input impedance of MOSFET more than BJT and FET?

1 Answer

Answer :

Yes, the input impedance of MOSFET more than BJT and FET.

Related questions

Description : An FET is a better chopper than a BJT because it has (A) lower offset voltage (B) higher series ON resistance (C) lower input current (D) higher input impedance

Last Answer : An FET is a better chopper than a BJT because it has lower offset voltage

Description : Compare BJT with FET

Last Answer : FET BJT It is unipolar device i.e. current in the device is carried either by electrons or holes It is bipolar device i.e. current in the device is carried either by ... from minority- carrier storage effects & therefore has lower switching speeds & cut-off frequencies. 

Description : Compare between BJT and FET on the basis of (i) Biolar/Unipolar (ii) Tharmal Runaway (iii) Noise (iv) Applications

Last Answer : Parameter BJT FET Bipolar/Unipolar It is bipolar device i.e. current in this device is carried by electrons and holes. It is unipolar device i.e. current ... in oscilloscopes, electronic voltmeters and other measuring and testing equipment because of their high input impedance.

Description : What is the difference between BJT and FET?

Last Answer : BJT  is  a  current  opperated   transistor  while  FET   is  a  field   opperated  transistor.

Description : A linear network has a current input 4cos(ω t + 20º)A and a voltage output 10 cos(ωt +110º) V. Determine the associated impedance.

Last Answer : Solution

Description : Operating frequency of power MOSFET is higher than that of power BJT. Justify the statement.

Last Answer : Power MOSFET have high turning on and turning off capability high switching speed of MOSFET is due to the high rate of change of drain voltage. The switching losses of power MOSFET ... lower frequency. Hence, operating frequency of power MOSFET is higher than that of power BJT.

Last Answer : Yes IGBT is costlier than BJT and MOSFET.

Description : Which phenomenon is present in thyristors but absent in BJT, MOSFET and IGBT ? (A) forward conduction (B) latching (C) forward blocking (D) reverse breakdown

Last Answer : Which phenomenon is present in thyristors but absent in BJT, MOSFET and IGBT ? (A) forward conduction (B) latching (C) forward blocking (D) reverse breakdown

Description : Explain the formation of parasitic BJT and parasitic diode in Power MOSFET. Can parasitic diode be used in same power electronics applications?

Last Answer : Parasitic Diode: The parasitic diode is in between drain and source. The MOSFET structure itself contains parasitic diode or body drain diode. This parasitic diode allows the reverse flow of current when the ... of MOSFET as a BJT collector. Parasitic BJT operates in the cut-off region.

Description : Compare BJT, MOSFET and IGBT .

Last Answer : BJT MOSFET IGBT BJT is a current controlled device. MOSFET is a voltage controlled device. IGBT is a voltage controlled device. The input impedance of BJT is low. ... is minority carrier device. MOSFET is majority carrier device. IGBT is minority carrier device.

Last Answer : Because it has a higher switching frequency and heat tolerance.

Last Answer : ON state losses of IGBT is less as compared to MOSFET and BJT.

Description : A certain power MOSFET has a maximum junction temperature specification of 1500o C, a junction-to-case thermal resistance of 1.00 C/W, and a junction-to ambient thermal resistance of 600 C/W. If the ambient temperature is 300o C ... the device will be A) 1.52 W B) 1.72 W C) 1.92W D) 2.00 W

Last Answer : A certain power MOSFET has a maximum junction temperature specification of 1500o C, a junction-to-case thermal resistance of 1.00 C/W, and a junction-to ambient thermal resistance of  ... 300o C, then the maximum allowable power dissipation in the device will be 2.00 W 

Description : When does the Body bias effect occur in an n-channel MOSFET?  A) When the Source voltage is less the Bulk voltage B) When the Source voltage is equal to or greater the Bulk voltage C) When the Drain voltage is equal to the Bulk voltage D) When the Gate voltage is equal to the Bulk Voltage 

Last Answer : When does the Body bias effect occur in an n-channel MOSFET?  A) When the Source voltage is less the Bulk voltage B) When the Source voltage is equal to or greater the Bulk voltage C) ... voltage is equal to the Bulk voltage D) When the Gate voltage is equal to the Bulk Voltage 

Description : A MOSFET has how many terminals?

Last Answer : A MOSFET having three terminals 1st one is Gate (insulated), 2nd one is Source and 3rd one is Drain.

Description : What is the transconductance of a MOSFET?

Description : What is meant by pinch off voltage in MOSFET?

Description : What is channel length modulation in MOSFET?

Last Answer : Shortening of lenght of the inverted channel region with increase in drain bias for large drain biases due to which current increases with drain bias and output resistance decreases is called channel length modulation in MOSFET.

Description : What is meant by body effect in MOSFET?

Description : How can we check a Mosfet?

Description : What is the use of a Mosfet?

Description : Why Mosfet is called Mosfet?

Last Answer : Why Mosfet is called Mosfet?

Description : What is the work of MOSFET?

Description : In MOSFET, the polarity of the inversion layers is the same as that of?

Last Answer : In MOSFET, the polarity of the inversion layers is the same as that of majority carriers in the source.

Description : MOSFET uses the electric field of?

Last Answer : MOSFET uses the electric field of gate capacitance.

Description : State the application of FET

Last Answer : Applications of FET : * As input amplifiers in oscilloscopes, electronic voltmeters and other measuring and testing equipment because high input impedance reduces loading effect to the minimum. * As Constant ... Used as Analog switch. * As a Voltage Variable Resistor (VVR) in operational amplifiers.

Description : Define pinch off voltage and drain resistance of FET.

Last Answer : 1 . Pinch-off Voltage: It is the value of the drain to source voltage VDS at which the drain current ID reaches its constant saturation value. Any further increase in VDS does not have any ... drain to source voltage to the change in drain current. It is also called AC/dynamic drain resistance.

Description : List different types of FET.

Last Answer : Types of FETs:  1. Junction FET (JFET) i. N-Channel JFET ii. P-Channel JFET  2. MOSFET i. E-MOSFET ii. D-MOSFET 

Description : Define impedance diagram and reactance diagram.

Last Answer : Impedance diagram: Impedance diagram is the simplified equivalent circuits of single line or one line diagrams of power system in which all components are represented by their equivalent circuit.  ... machines are neglected and is used only for fault current calculation is called reactance diagram.

Description : Give the effect of source impedance on converter operation.

Last Answer : Effect of source impedance on converter operation: For single-phase fully controlled bridge converter, the SCRs are triggered in pairs alternately. During positive half-cycle of input, SCRs T1 and T2 are triggered ... increases and as a consequence, the output dc voltage decreases. 

Description : Impedance ratio

Last Answer : Impedance ratio

Description : How to find total impedance Z, current I and Impedance angle ?

Last Answer : How to find total impedance Z, current I and Impedance angle ?

Description : A 50Ω transmission line is terminated in an impedance of 20-j50. What will be the reflection coefficient? A) 0.69 B) 1.69 C) 6.9 D) 16.9 

Last Answer : A 50Ω transmission line is terminated in an impedance of 20-j50. What will be the reflection coefficient? A) 0.69 B) 1.69 C) 6.9 D) 16.9 

Description :  An independent voltage source in series with an impedance ZS=R+jXS delivers a maximum average power to a load impedance ZL when A) ZL = R B) ZL = jXS C) ZL = R-jXS D) ZL = R+jXS 

Last Answer :  An independent voltage source in series with an impedance ZS=R+jXS delivers a maximum average power to a load impedance ZL when ZL = R-jXS

Description : The rotor impedance of a slip ring induction motor is (0.1 + j0.6)Ohm/ ph . The resistance/ph to be inserted into rotor to get maximum torque at starting should be

Last Answer : The rotor impedance of a slip ring induction motor is (0.1 + j0.6)Ohm/ ph . The resistance/ph to be inserted into rotor to get maximum torque at starting should be 0.5 Ohm

Description : A transmission line has 1 P.0 impedance on a base of 11 KV, 100 MVA. On a base of 55 KV. it will have a P.0 impedance of

Last Answer : A transmission line has 1 P.0 impedance on a base of 11 KV, 100 MVA. On a base of 55 KV. it will have a P.0 impedance of 0.02 P.U

Description : The surge impedance for over head line is taken as  (1) 10-20 ohms (2) 50-60 ohms (3) 100-200 ohms (4) 1000-2000 ohms

Last Answer : The surge impedance for over head line is taken as 100-200 ohms

Description : Which of the following is true for a bus impedance matrix ?  (A) It is sparse  (B) It has diagonally dominant elements  (C) It is the inverse of the bus admittance matrix  (D) Each element of it is the reciprocal of the corresponding element in admittance matrix

Last Answer : Which of the following is true for a bus impedance matrix ?  (A) It is sparse  (B) It has diagonally dominant elements  (C) It is the inverse of the bus admittance matrix  (D) Each element of it is the reciprocal of the corresponding element in admittance matrix

Description : In a series resonant circuit, the impedance of the circuit is?

Last Answer : In a series resonant circuit, the impedance of the circuit is minimum.

Description : How the low impedance at input of mosfet drivers is good in suppressing transients?