# What is channel length modulation in MOSFET?

What is channel length modulation in MOSFET?

313 views

Channel length modulation (CLM) is a shortening of the length of the inverted channelregion with increase in drain bias for large drain biases. The result of CLM is an increase in current with drain bias and a reduction of output resistance.

Shortening of lenght of the inverted channel region with increase in drain bias for large drain biases due to which current increases with drain bias and output resistance decreases is called channel length modulation in MOSFET.

## Related Questions

The threshold voltage of an n- channel enhancement mode MOSFET is 0.5V when the device is biased at a gate voltage of 3V. Pinch off would be occurs at a drain voltage of (A) 1.5V (B) 2.5V (C) 3.5V (D) 4.5V
Last Answer : The threshold voltage of an n- channel enhancement mode MOSFET is 0.5V when the device is biased at a gate voltage of 3V. Pinch off would be occurs at a drain voltage of 2.5V When does the Body bias effect occur in an n-channel MOSFET?  A) When the Source voltage is less the Bulk voltage B) When the Source voltage is equal to or greater the Bulk voltage C) When the Drain voltage is equal to the Bulk voltage D) When the Gate voltage is equal to the Bulk Voltage
Last Answer : When does the Body bias effect occur in an n-channel MOSFET?  A) When the Source voltage is less the Bulk voltage B) When the Source voltage is equal to or greater the Bulk voltage C) ... voltage is equal to the Bulk voltage D) When the Gate voltage is equal to the Bulk Voltage The transit time of the current carriers through the channel of a JFET decides it's?
Last Answer : The transit time of the current carriers through the channel of a JFET decides it's gate characteristics. A certain power MOSFET has a maximum junction temperature specification of 1500o C, a junction-to-case thermal resistance of 1.00 C/W, and a junction-to ambient thermal resistance of 600 C/W. If the ambient temperature is 300o C ... the device will be A) 1.52 W B) 1.72 W C) 1.92W D) 2.00 W
Last Answer : A certain power MOSFET has a maximum junction temperature specification of 1500o C, a junction-to-case thermal resistance of 1.00 C/W, and a junction-to ambient thermal resistance of  ... 300o C, then the maximum allowable power dissipation in the device will be 2.00 W A MOSFET has how many terminals?
Last Answer : A MOSFET having three terminals 1st one is Gate (insulated), 2nd one is Source and 3rd one is Drain. What is the transconductance of a MOSFET? What is meant by pinch off voltage in MOSFET? What is meant by body effect in MOSFET? How can we check a Mosfet? What is the use of a Mosfet? Why Mosfet is called Mosfet?
Last Answer : Why Mosfet is called Mosfet? What is the work of MOSFET? In MOSFET, the polarity of the inversion layers is the same as that of?
Last Answer : In MOSFET, the polarity of the inversion layers is the same as that of majority carriers in the source. MOSFET uses the electric field of?
Last Answer : MOSFET uses the electric field of gate capacitance. Is the input impedance of MOSFET more than BJT and FET?
Last Answer : Yes, the input impedance of MOSFET more than BJT and FET. i) State the significance of modulation index in AM transmission. ii) Explain the effect of modulation index on AM wave with waveforms.
Last Answer : Significance of modulation index in AM transmission  It is used to determine the strength and quality of transmitted signal. If the modulation index is small, then the amount of variation in ... amplitude part of its information is lost in the process of modulation which is undesirable. State the need of modulation in communication system.
Last Answer : Need of modulation:- 1. To reduce the height of antenna 2. To avoids mixing of signals 3. To increases the range of communication 4. To make multiplexing of maximum signal is possible 5. To improve the quality of reception The total power of an AM transmitter having a carrier power of 50 W and the percentage of modulation at 80% is A) 50 W B) 66 W C) 68 W D) 70 W
Last Answer : The total power of an AM transmitter having a carrier power of 50 W and the percentage of modulation at 80% is 66 W Explain the pulse width modulation technique for control of AC output voltage. Explain the significance of over modulation. Describe the operation of N channel enhancement type MOSFET with diagram.
Last Answer : As its name indicates, this MOSFET operates only in the enhancement mode and has no depletion mode. It operates with large positive gate voltage only. It does not conduct when the ... of charge carriers attracted to the positive gate. Thus drain current is controlled by the gate potential. Describe IS – 95 forward link channel structure.
Last Answer : The IS-95 forward Channel structure consists of four types of logical Channels - pilot Channel, synchronization Channel, paging Channel, and forward traffic Channels. Each forward carrier Channel contains one ... . This code is known as the channel identifier. This code is different for each user Define the following terms : (i) Base Station (ii) Control Channel (iii) Mobile Station (iv) Page
Last Answer : i) Base Station: - A fixed station in a mobile radio system used for radio communication with mobile stations. Base stations are located at the center or on the edge of a coverage region ... the page throughout the service area using base stations which broadcast the page on a radio carrier. Explain estimation of channel capacitance of CMOS.
Last Answer : Capacitance estimation: The dynamic response i.e. switching speed of MOS system depends on capacitance associated with the MOS devices which are formed by different layers in MOS transistors ... are due to three dimensional, distributed charge voltage relations within the device structure. What is the channel capacity of a noisy channel with conditional probability of error p = 1/2? A) 0 B) 1 C) Infinity D) 2
Last Answer : What is the channel capacity of a noisy channel with conditional probability of error p = 1/2?  A) 0 B) 1 C) Infinity D) 2 As per Shannon’s channel capacity theorem, if samples are transmitted in ‘T’ seconds over a noisy channel which is bandlimited to ‘B’ Hz. The number of samples ‘n’ is given by (symbols/notations carry their usual meaning) A) B/T B) T/B C) 2BT D) BT/2
Last Answer : As per Shannon’s channel capacity theorem, if samples are transmitted in ‘T’ seconds over a noisy channel which is bandlimited to ‘B’ Hz. The number of samples ‘n’ is given by ( ... /notations carry their usual meaning) A) B/T B) T/B C) 2BT D) BT/2 If the insulation resistance of a cable of length 10 km is 1 mega ohm, its insulation resistance for 50 km length will be
Last Answer : If the insulation resistance of a cable of length 10 km is 1 mega ohm, its insulation resistance for 50 km length will be 0.2 mega ohm What happens to the resistance of a wire when its length as well as the cross-sectional area are doubled? A) It doubles B) It becomes 4 times C) It becomes 2π times D) It remains the same
Last Answer : Automatically the resistivity will increase as they are the factors affecting the resistivity lt the length, number of turns and area of a coil are  doubled, the inductance of the coil
Last Answer : lt the length, number of turns and area of a coil are  doubled, the inductance of the coil is quadrupled Last Answer : Advantages of MOSFET * MOSFETs provide greater efficiency while operating at lower voltages. * Absence of gate current results in high input impedance. * High switching speed. * They operate at lower ... due to lower resistance of channel. * They are easy to manufacture. * They are portable.  What parameters are to be considered when choosing a MOSFET? Describe with neat sketch the construction and working principle of MOSFET.
Last Answer : Construction and working principle of MOSFET:  A) Depletion type MOSFET: Construction: The N-channel depletion type MOSFET is formed on P-type silicon substrate with two heavily ... accumulation of electrons and hence more current. Thus the MOSFET is a gate voltage controlled device. State the applications of MOSFET
Last Answer : Applications of MOSFET: i) Switching-mode-power-supplies (SMPS) and linear power supplies. ii) Brushless DC motor drives iii) Solid state DC relay iv) Automobile applications v) Stepper motor controller vi) Lighting controls vii) Solenoid drivers viii) Robotics ix) Induction heating Compare JFET with MOSFET.
Last Answer : Particulars JFET MOSFET 1) Type Voltage controlled device Voltage controlled device 2) Mode of operation Operates only in depletion mode Operates in depletion and enhancement ... 6) Gate connection Not isolated from substrate Isolated by SiO2 layer from substrate Which phenomenon is present in thyristors but absent in BJT, MOSFET and IGBT ? (A) forward conduction (B) latching (C) forward blocking (D) reverse breakdown
Last Answer : Which phenomenon is present in thyristors but absent in BJT, MOSFET and IGBT ? (A) forward conduction (B) latching (C) forward blocking (D) reverse breakdown Explain switching model of MOSFET. Explain MOSFET gate drive circuit and totem pole configuration.
Last Answer : MOSFET gate drive circuit: The turning on and turning off of MOSFET can be controlled from gate to source voltage signal. If the gate to source voltage of MOSFET exceeds threshold ... this configuration, the two switches (transistors) are used in totem pole arrangement with a comparator. Explain the formation of parasitic BJT and parasitic diode in Power MOSFET. Can parasitic diode be used in same power electronics applications?
Last Answer : Parasitic Diode: The parasitic diode is in between drain and source. The MOSFET structure itself contains parasitic diode or body drain diode. This parasitic diode allows the reverse flow of current when the ... of MOSFET as a BJT collector. Parasitic BJT operates in the cut-off region. Operating frequency of power MOSFET is higher than that of power BJT. Justify the statement.
Last Answer : Power MOSFET have high turning on and turning off capability high switching speed of MOSFET is due to the high rate of change of drain voltage. The switching losses of power MOSFET ... lower frequency. Hence, operating frequency of power MOSFET is higher than that of power BJT. Justify the statement. Antiparallel diode is connected across MOSFET.
Last Answer : In MOSFET current is flow from drain to source but when the load is inductive the current may flow in opposite direction. To avoid the opposite flow of current and to protect MOSFET the antiparallel diode is connected across MOSFET. parallel operation of MOSFET can be done more easily as compared to thyristor. why?
Last Answer : Parallel operation of MOSFET can be done more easily as compared to thyristor because the resistance of MOSFET is increases with increase in temperature. MOSFET have the positive temperature coefficient. In ... the parallel operation of MOSFET can be done more easily as compared to the thyristor. Justify. Power MOSFET is operated at high enough gate source voltage to minimize the conduction losses.
Last Answer : MOSFET is metal oxide field effect transistor. MOSFET is a voltage controlled device. MOSFET is majority carrier device. MOSFET are of two one is n-channel MOSFET and p-channel MOSFET. Gate, ... . Hence, power MOSFET is operated at high enough gate-source voltage to minimize the conduction losses. Explain difference between enhancement MOSFET and depletion type MOSFET.
Last Answer : In enhancement MOSFET channel is not initially exists but in depletion MOSFET channel is already exists. In case of depletion MOSFET if the voltage is applied between drain and source the drain current will flow ... a channel. depletion MOSFET & enhancement MOSFET Compare BJT, MOSFET and IGBT .
Last Answer : BJT MOSFET IGBT BJT is a current controlled device. MOSFET is a voltage controlled device. IGBT is a voltage controlled device. The input impedance of BJT is low. ... is minority carrier device. MOSFET is majority carrier device. IGBT is minority carrier device. Last Answer : Yes IGBT is costlier than BJT and MOSFET. Last Answer : No MOSFET do not have a second breakdown problem. Last Answer : MOSFET  are voltage controlled devices. Last Answer : MOSFETs are of two types namely  1) enhancement type MOSFET  or  E-MOSFET 2) depletion type MOSFET  or  D-MOSFET Last Answer : MOSFET have high current losses due to High on state resistance. Hence MOSFET is used for low power applications. 