In a P type semiconductor

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In a P type semiconductor At room temperature the hole concentration equals the acceptor concentration

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n-type semiconductor can be made by adding ____ to intrinsic semiconductor

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Description : The Semiconductor strain gauges typically have much higher gauge factors than those of metallic strain gauges, primarily due to : (A) higher temperature sensitivity (B) higher Poisson’s ratio (C) higher piezoresitive coefficient (D) higher magnetostrictive coefficient

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In a p-type semiconductor, Which are the majority charge carriers? -Do You Know?

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Last Answer : answer:

Explain the formation of a p-type semiconductor.

Description : Explain the formation of a p-type semiconductor.

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Classify each of the following as being either a p-type or an n-type Semiconductor.

Description : Classify each of the following as being either a p-type or an n-type Semiconductor.

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What are the majority carriers in a P-type semiconductor?

Description : What are the majority carriers in a P-type semiconductor?

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In a P-type semiconductor the charge carriers are a) Electrons b) Holes c) Protons d) Neutrons

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When a semiconductor is doped with a P-type impurity, each impurity atom will (A) acquire negative charge. (B) acquire positive charge. (C) remain electrically neutral. (D) give away one electron.

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In p-type semiconductor the majority carriers are (A) holes. (B) electrons. (C) positive ions. (D) negative ions.

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Hall effect may be used for which of the following? (A) determining whether the semiconductor is p or n type. (B) determining the carrier concentration. (C) calculating the mobility. (D) All the above.

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State the impurities for obtaining p-type and n-type semiconductor from intrinsic semi conductor.

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Explain the p-type semiconductor.

Description : Explain the p-type semiconductor.  

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Distinguish between P-type and N-type semiconductor.

Description : Distinguish between P-type and N-type semiconductor. 

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Impurity atoms to be added to pure silicon in order to make a p-type semiconductor belongs to

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NMOS stands for: a. N-channel metal-oxide-semiconductor b. P-channel metal-oxide-semiconductor c. N-channel memory-oxide-semiconductor d. All the above

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PMOS stands for: a. P-channel metal-oxide-semiconductor b. P-channel memory –oxide-semiconductor c. Both A and B d. None of these

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In a semiconductor diode, p-side is earthed and to n-side is applied a potential of -2 volt; the diode shall (a) Conduct (b) Not conduct (c) Conduct partially (d) Break down

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A thin P-type silicon sample is uniformly illuminated with light which generates excess carriers.

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What is n- type semiconductor ?

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As shown in the illustration, which electrical symbol represents a PNP type semiconductor? EL-0065 A. A B. B C. C D. D

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The main difference between an electron tube and a transistor is the _____________. A. type of function they can perform B. reaction of electron flow through a gas or vacuum in a transistor C. reaction of electron flow through a semiconductor when placed in a tube D. reaction of electron flow through a semiconductor used to form a transistor

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Which type of laser is the simplest to modulate directly by changing its excitation? a. Semiconductor b. Ruby c. Helium-neon d. Neodymium-YAG

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Conduction in which type of semiconductor material is similar to conduction in a copper wire?

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What type of PN diode is formed by using a fine metal wire and a section of N-type semiconductor material?

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What are the majority carriers in an N-type semiconductor?

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The domain in a gallium-arsenide semiconductor has what type of electrical field when compared to the other regions across the body of a semiconductor?

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Which type of laser is the simplest to modulate directly by changing its excitation? ∙ a. Semiconductor ∙ b. Ruby ∙ c. Helium-neon ∙ d. Neodymium-YAG

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Which type of laser is the simplest to modulate directly by changing its excitation? ∙ a. Semiconductor ∙ b. Ruby ∙ c. Helium-neon ∙ d. Neodymium-YAG

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n-type semiconductor is an example of (A) extrinsic semiconductor. (B) intrinsic semiconductor. (C) super conductor. (D) insulators..

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In an n-type semiconductor, as the donor concentration ND increases, the Fermi level EF:

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Last Answer : In an n-type semiconductor, as the donor concentration ND increases, the Fermi level EF: Moves towards the conduction band

The material used for ‘doping’ to prepare N - type semiconductor is

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Majority carriers in n type semiconductor are_______.

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Last Answer : Majority carriers in n type semiconductor are Electrons.

An n-type semiconductor is ………

Last Answer : An n-type semiconductor is Electrically neutral.

What is the channel capacity of a noisy channel with conditional probability of error p = 1/2?

Description : What is the channel capacity of a noisy channel with conditional probability of error p = 1/2? A) 0 B) 1 C) Infinity D) 2  

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