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Answer :

When a pure semiconductor is heated, its resistance Goes down.

Related questions

Last Answer : As the doping to a pure semiconductor increases, the bulk resistance of the semiconductor Decreases.

Description : Impurity atoms to be added to pure silicon in order to make a p-type semiconductor belongs to (a) Phosphorous (b) Boron (c) Antimony (d) Aluminium 

Last Answer : Boron  , a  group  three  element.

Last Answer : The impurity level in an extrinsic semiconductor is about 1 atom for 108 atoms of pure semiconductor.

Last Answer : When a pentavalent impurity is added to a pure semiconductor, it becomes n-type semiconductor.

Last Answer : A semiconductor has Negative temperature coefficient of resistance.

Description : In a single crystal of an intrinsic semiconductor, the number of free carriers at the Fermi level at room temperature is: A) Half the total number of electrons in the crystal B) Zero C) Half the number of atoms in the crystal D) Half the number of free electrons in the crystal

Last Answer : In a single crystal of an intrinsic semiconductor, the number of free carriers at the Fermi level at room temperature is: Zero 

Description : In an n-type semiconductor, as the donor concentration ND increases, the Fermi level EF: (1) Remains unaltered (2) Moves towards the conduction band (3) Move towards the center of forbidden energy gap (4) May or may not move depending on temperature 

Last Answer : In an n-type semiconductor, as the donor concentration ND increases, the Fermi level EF: Moves towards the conduction band

Description : The advantage of a semiconductor strain gauge cover the wire round strain gauge is that

Last Answer : The advantage of a semiconductor strain gauge cover the wire round strain gauge is that it is more sensitive

Description : The semiconductor used for LEDs emitting in the visible range is  (a) GaAs (b) GaAlAs (c) GalnAs (d) GaAsP

Last Answer : The semiconductor used for LEDs emitting in the visible range is GaAsP

Description : The polar bonds existing in III-V compound semiconductor, may be considered as equivalent to  (a) 1 ionic bond and 3 covalent bonds (b) 1 ionic bond and 4 covalent bonds (c) 2 ionic bonds and 2 covalent bonds (d) 2 ionic bonds and 4 covalent bonds

Last Answer : The polar bonds existing in III-V compound semiconductor, may be considered as equivalent to 1 ionic bond and 3 covalent bonds

Description : The material used for ‘doping’ to prepare N - type semiconductor is

Last Answer : The material used for ‘doping’ to prepare N - type semiconductor is Arsenic

Description : While comparing doped semiconductor vs. un-doped semiconductor, which of the following statements is NOT true ? (A) Doped semiconductor has smaller band-gap compared to un-doped semiconductor (B) ... to un-doped semiconductor (D) Doped as well as un-doped semiconductor have equal bandwidth

Last Answer : While comparing doped semiconductor vs. un-doped semiconductor, which of the following statements is NOT true ? (A) Doped semiconductor has smaller band-gap compared to un-doped semiconductor (B) ... to un-doped semiconductor (D) Doped as well as un-doped semiconductor have equal bandwidth

Description : To increase mobility of electron in a given piece of semiconductor (A) Increase overall size of the semiconductor (B) Increase length (C) Increase width (D) Small increase in temperature above room temperature value

Last Answer : To increase mobility of electron in a given piece of semiconductor Small increase in temperature above room temperature value

Last Answer : At absolute temperature, an intrinsic semiconductor has No holes or free electrons.

Last Answer : At room temperature, an intrinsic semiconductor has A few free electrons and holes.

Last Answer :  In an intrinsic semiconductor, the number of free electrons Equals the number of holes.

Last Answer : When the temperature of an extrinsic semiconductor is increased, the pronounced effect is on Minority carriers.

Last Answer : In a semiconductor, current conduction is due to Holes and free electrons.

Last Answer : A hole in a semiconductor is defined as The incomplete part of an electron pair bond.

Last Answer : Addition of trivalent impurity to a semiconductor creates many Holes.

Last Answer : An n-type semiconductor is Electrically neutral.

Last Answer : Addition of pentavalent impurity to a semiconductor creates many Free electrons.

Last Answer : The strength of a semiconductor crystal comes from Electron-pair bonds.

Last Answer : The most commonly used semiconductor is Silicon.

Description : Pure silicon is (a) a p-type semiconductor (b) an n-type semiconductor (c) an intrinsic semiconductor (d) an extrinsic semiconductor 

Last Answer : Pure  silicon  is  an  intrinsic  semiconductor because  its  own  electrons   are  responsible   for   conduction.

Description : What is an intrinsic semiconductor or pure semiconductor?

Last Answer : A semiconductor in which the number of holes and electrons are equal is called intrinsic orpure semiconductor.

Description : What is the name given to a piece of pure semiconductor material that has an equal number of electrons and holes?

Last Answer : Intrinsic.

Description : The process of addition of impurity in pure semiconductor is : a) Doping b) Radiating c) Mixing d) Insulating

Last Answer : d) Insulating

Description : A pure semiconductor under ordinary conditions behaves like (A) a conductor. (B) an insulator. (C) a magnetic material. (D) a ferro-electric material.

Last Answer : (B) an insulator.

Description : In a transistor, the base is _______. (1) an insulator (2) a conductor of low resistance (3) a conductor of high resistance (4) an extrinsic semiconductor

Last Answer : (2) a conductor of low resistance Explanation: A transistor is a semiconductor device used to amplify and switch electronic signals and electrical power. It is composed of semiconductor material with at least three terminals for connection to an external circuit.

Description : When using an ohmmeter to test a semiconductor diode, you find a low resistance in both the forward and reverse bias directions. This indicates that the diode has a/an ____________. A. open B. short C. good resistive quality D. good capacitive quality

Last Answer : Answer: B

Description : A semiconductor that decreases in resistance with an increase in temperature is known as a _____________. A. resistor B. thermistor C. diode D. thermopile

Last Answer : Answer: B

Description : A light dependent resistor is made up of A. low resistance semiconductor B. low resistance metal C. high resistance semiconductor D. high resistance metal

Last Answer :  high resistance semiconductor

Description : The point on the current curve of a gallium-arsenide semiconductor at which it begins to exhibit negative resistance is called what?

Last Answer : Threshold.

Description : A semiconductor device made out of a material having very high temperature coefficient of resistance is

Last Answer : A semiconductor device made out of a material having very high temperature coefficient of resistance is Thermistor

Description : what is the temperature coefficient of Resistance of semiconductor ?

Last Answer : semiconductors have negative temperature coefficient of resistance. means as the temperature increases resistance decreases.

Description :  In case of semi-conductors, the ratio of conduction current to displacement current is: A) more than 200 and less than 1000 B) less than 100 but greater than 1/100 C) less than 1/100 D) more than 1000

Last Answer : In case of semi-conductors, the ratio of conduction current to displacement current is:  less than 100 but greater than 1/100

Description : The following property of semiconductors cannot be determined from Hall effect: (1) Semiconductor is n–type or p–type (2) The carrier concentration (3) The mobility of semiconductor (4) The atomic concentration of semiconductor

Last Answer : The following property of semiconductors cannot be determined from Hall effect: The atomic concentration of semiconductor

Description : Gold is often diffused into silicon PN junction devices to   (A) increase the recombination rate (B) reduce the recombination rate (C) make silicon a direct gap semiconductor (D) make silicon semi-metal

Last Answer : To  increase  the  combinational  rate  at  the  pn  junction

Description : The Maximum spectral response of the germanium and silicon is in the   (A) infrared region (B) ultraviolet region (C) visible region (D) x-ray region

Last Answer : The Maximum spectral response of the germanium and silicon is in the ultraviolet region

Description : Silicon has a preference in IC technology because  (a) it is an indirect semiconductor (b) it is a covalent semiconductor (c) it is an elemental semiconductor (d) of the availability of nature oxide SiO

Last Answer : Silicon has a preference in IC technology because of the availability of nature oxide SiO

Description : Most of the transistors are NPN type and not PNP type because  1.NPN transistor gives large voltage gain 2.NPN transistors are more negative than PNP transistors 3.In NPN transistor, the current ... free electrons which are less mobiles than holes 4.We can have high conduction is NPN transistors 

Last Answer : Most of the transistors are NPN type and not PNP type because We can have high conduction is NPN transistors 

Description : When reverse bias is applied to a junction diode, it  1.increases the potential barrier 2.decreases the potential barrier 3.greatly increases the minority carrier current 4.greatly increases the majority carrier current 

Last Answer : When reverse bias is applied to a junction diode, it increases the potential barrier 

Description : When a P - N junction is forward biased  1.only electrons in N-region are injected into P-region 2.only holes in P-region are injected into N-region 3.majority carriers in each region are injected into the other region 4.minority current is reduced to zero 

Last Answer : When a P - N junction is forward biased majority carriers in each region are injected into the other region 

Description : In a P-N diode, assume that P-side is lightly doped and N-side is heavily doped. Based on this information, which of the following statement is true ? (A) Depletion region is more extended in ... (C) Depletion region would be equal on both sides (D) Not enough information provided to give answer

Last Answer : In a P-N diode, assume that P-side is lightly doped and N-side is heavily doped. Based on this information, which of the following statement is true ? (A) Depletion region is more extended ... (C) Depletion region would be equal on both sides (D) Not enough information provided to give answer

Description : Space charge region or depletion region in a P-N diode has (A) No charge (B) No fixed charge (C) No mobile charge (D) Both fixed and mobile charges

Last Answer : Space charge region or depletion region in a P-N diode has No mobile charge

Description : At room temperature in an intrinsic piece of Si there could be (A) No free carriers (B) Some electrons but no holes (C) Some holes but no electrons (D) Equal number of holes and electrons

Last Answer : No  free   carriers.

Description : Which of the following serves as donor impurity in Silicon?  (A) Boron (B) Indium (C) Germanium (D) Antimony 

Last Answer : Which of the following will serve as a donor impurity in silicon?   (A) Boron (B) Indium (C) Germanium (D) Antimony

Last Answer : At room temperature, an intrinsic silicon crystal acts approximately as An insulator.