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Answer :

The leakage current across a pn junction is due to Minority carriers.

Related questions

Description : The leakage current in a pn junction is of the order of

Last Answer : The leakage current in a pn junction is of the order of µA.

Description : In a reverse biased PN-junction, which current carriers cause leakage current?

Last Answer : The minority carriers

Description : The leakage current of PN junction is caused by?

Last Answer : The leakage current of PN junction is caused by heat energy.

Description : Gold is often diffused into silicon PN junction devices to   (A) increase the recombination rate (B) reduce the recombination rate (C) make silicon a direct gap semiconductor (D) make silicon semi-metal

Last Answer : To  increase  the  combinational  rate  at  the  pn  junction

Last Answer : With forward bias to a pn junction , the width of depletion layer Decreases.

Last Answer : A pn junction acts as a Unidirectional switch.

Last Answer : A reverse bias pn junction has Almost no current.

Last Answer : In the depletion region of a pn junction, there is a shortage of Holes and electrons.

Last Answer : The battery connections required to forward bias a pn junction are +ve terminal to p and –ve terminal to n.

Description : The unidirectional property of a pn-junction is useful for its use as which thing? -General Knowledge

Last Answer : The answer is 'Rectifier'

Description : The unidirectional property of a pn-junction is useful for its use as which thing? -General Knowledge

Last Answer : answer:

Description : The unidirectional property of a pn-junction is useful for its use as which thing? -General Knowledge

Last Answer : answer:

Description : What is PN Junction ? What is PN Junction ?

Last Answer : When a P-type semiconductor makes a suitable connection with an N-type semiconductor in a special way, the connection surface is called PN junction.

Description : An ohmmeter used to test for front-to-back resistance of a PN junction diode should produce roughly what ratio? A. 100:01:00 B. 500:01:00 C. 1000:01:00 D. 5000:01:00

Last Answer : Answer: A

Description : The unidirectional property of a pn-junction is useful for its use as which thing

Last Answer : Rectifier

Description : Write some applications of PN junction diode

Last Answer : 1. Rectifier circuit ii. clipping and clamping iii voltage multiplier iv AM detection v. Feedback diodes vi Freewheeling diode

Description : What is depletion region in PN junction?

Last Answer : The region around the junction from which the mobile charge carriers ( electrons and holes) are depleted is called as depletion region.since this region has immobile ions, which are electrically charged , the depletion region is also known as space charge region.

Description : When a PN junction is forward biased, what happens to the depletion region?

Last Answer : The depletion region decreases.

Description : What is the main difference in construction between normal PN junction diodes and tunnel diodes?

Last Answer : The amount of doping.

Description : Which breakdown theory explains the action that takes place in a heavily doped PN-junction with a reverse bias of less than 5 volts?

Last Answer : Zener effect.

Description : The action of a PN-junction during breakdown can be explained by what two theories?

Last Answer : Zener effect and avalanche effect.

Description : What type of bias opposes the PN junction barrier?

Last Answer : Forward.

Description : In order to reverse bias in a PN junction, what terminal of a battery is connected to the P material?

Last Answer : Negative.

Description : What is the name of the area in a PN junction that has a shortage of electrons and holes?

Last Answer : Depletion region

Description : What is the purpose of a PN junction diode?

Last Answer : To convert alternating current into direct current

Description : What is the primary advantage of bulk-effect devices over normal pn-junction semiconductors?

Last Answer : Larger microwave power outputs.

Description : The varactor is a pn junction that acts as what type of electronic device?

Last Answer : Variable capacitor.

Description : A pn-junction diode emits light by spontaneous emission ∙ A. LED ∙ B. APD ∙ C. PIN

Last Answer : A. LED

Description : If PN junction is forward biased its resistance is (a) Zero (b) Infinity (c) A few ohm (d) A few kilo ohms

Last Answer : c) A few ohm

Description : State any Four applications of PN junction diode.

Last Answer : 1. Rectifiers in power supplies, 2. Detectors in RF, 3 .Clippers, 4. In clamping networks used as DC Restorers, 5. As switches in digital logic circuits.

Description : Describe the working of PN junction diode with neat sketch under forward biased condition.

Last Answer : If the p-region (anode) is connected to the positive terminal of the external DC source and nside (cathode) is connected to the negative terminal of the DC source then the biasing ... The large number of majority carriers crossing the junction constitutes a current called as the forward current.

Description : Describe avalanche and zener breakdown of PN junction with neat graph.

Last Answer : Avalanche Breakdown It is observed in diodes having Vz> 8V. is called Avalanche Breakdown It occurs due to accelerating minority carriers. It shows gradual change. Breakdown voltage ... field. Breakdown is very sharp. Breakdown voltage decreases with increase in temperature 

Description : Define Depletion region and Barrier voltage of PN junction.

Last Answer : 1. Depletion region : The region consisting of immobile positive charge at n-side and immobile negative charge at p-side near the junction acts like a barrier and prevents the further flow of ... charge formed at the p-n junction is called barrier voltage, barrier potential or junction barrier.

Description : Plot and explain I -V characteristics of a PN junction diode. 

Last Answer : V-I characteristics of PN junction diode: Explanation:  Forward Bias:  If the external voltage applied on the silicon diode is less than 0.7 volts, the silicon diode ... reverse breakdown voltage.  * Diode breakdown occurs by two mechanisms: Avalanche breakdown and Zener breakdown.

Description : When reverse bias is applied to a junction diode, it  1.increases the potential barrier 2.decreases the potential barrier 3.greatly increases the minority carrier current 4.greatly increases the majority carrier current 

Last Answer : When reverse bias is applied to a junction diode, it increases the potential barrier 

Description : When a P - N junction is forward biased  1.only electrons in N-region are injected into P-region 2.only holes in P-region are injected into N-region 3.majority carriers in each region are injected into the other region 4.minority current is reduced to zero 

Last Answer : When a P - N junction is forward biased majority carriers in each region are injected into the other region 

Description : A forward-biased PN-junction,  (A) results in increase in diffusion current  (B) results in increase in drift current  (C) results in decrease in drift current  (D) results in decrease in diffusion current

Last Answer : A forward-biased PN-junction,  results in increase in diffusion current 

Description : In a PN-junction with open circuit terminal (equilibrium), with P doping higher as compared to N doping (A) N-side depletion region is small as compared to p-side depletion region (B) N-side ... depletion region (C) N-side depletion region is same as p-side depletion region (D) Cannot say

Last Answer : In a PN-junction with open circuit terminal (equilibrium), with P doping higher as compared to N doping N-side depletion region is small as compared to p-side depletion region

Last Answer : The p-type substrates in a conventional pn-junction isolated integrated circuit should be connected to: The most negative potential available in the circuit.

Last Answer : A UJT has one PN Junction

Description : The slot leakage can be calculated by making which of the following assumptions ? (a) The current in the slot conductors is uniformly distributed over their cross-section (b) The leakage path is straight ... is only considered. The reluctance of iron paths is assumed as zero (d) All of the above

Last Answer : (d) All of the above

Last Answer : In a semiconductor, current conduction is due to Holes and free electrons.

Description : Barrier potential in a P-N junction is caused by (A) Thermally generated electrons and holes. (B) Diffusion of majority carriers across the junction. (C) Migration of minority carriers across the junction. (D) Flow of drift current.

Last Answer : (B) Diffusion of majority carriers across the junction.

Description : Consider the following statements regarding the formation of P-N junctions: 1. Holes diffuse across the junction from P-side to N-side 2. The depletion layer is wiped out. 3. There is continuous flow of current across the junction 4 ... correct? (a) 1 and 3 (b) 2 and 3 (c) 1 and 4 (d) 2 and 4

Last Answer : Ans: (c) When a pn-junction is formed, there will be diffusion of carries across the junctions followed by recombination, and the creation of a depletion layer across which a ... potential is established, which will prevent further diffusion of carries across the junction, leading to equilibrium

Last Answer : The random motion of holes and free electrons due to thermal agitation is called Diffusion.

Description : The function of the gap junction is to (a) separate two cells from each other (b) stop substance from leaking across a tissue (c) performing cementing to keep neighbouring cells together ( ... cells by connecting the cytoplasm for rapid transfer of ions, small molecules and some large molecules.

Last Answer : (d) facilitate communication between adjoining cells by connecting the cytoplasm for rapid transfer of ions, small molecules and some large molecules.

Description : What is the capacitive reactance across a point-contact diode as compared to a normal junction diode?

Last Answer : Lower.

Description :  In case of semi-conductors, the ratio of conduction current to displacement current is: A) more than 200 and less than 1000 B) less than 100 but greater than 1/100 C) less than 1/100 D) more than 1000

Last Answer : In case of semi-conductors, the ratio of conduction current to displacement current is:  less than 100 but greater than 1/100