In an intrinsic semiconductor, the number of free electrons ………

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1 Answer

Answer :

 In an intrinsic semiconductor, the number of free electrons Equals the number of holes.

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Related questions

In a single crystal of an intrinsic semiconductor, the number of free carriers at the Fermi level at room

Description : In a single crystal of an intrinsic semiconductor, the number of free carriers at the Fermi level at room temperature is: A) Half the total number of electrons in the crystal B) Zero C) Half the number of atoms in the crystal D) Half the number of free electrons in the crystal

Last Answer : In a single crystal of an intrinsic semiconductor, the number of free carriers at the Fermi level at room temperature is: Zero 

At absolute temperature, an intrinsic semiconductor has ……….

Last Answer : At absolute temperature, an intrinsic semiconductor has No holes or free electrons.

At room temperature, an intrinsic semiconductor has ……….

Last Answer : At room temperature, an intrinsic semiconductor has A few free electrons and holes.

C and Si both have same lattice structure, having 4 bonding electrons in each. However, C is insulator where as Si is intrinsic semiconductor. This is because (1) The four bonding electrons in the case of C lie in the third orbit, whereas for Si they lie in the fourth orbit (2) In case of C the valance band is not completely filled at absolute zero temperature (3) In case of C the conduction band is partly filled even at absolute zero temperature (4) The four bonding electrons in the case of C lie in the second orbit, whereas in the case of Si they lie in the third

Description : C and Si both have same lattice structure, having 4 bonding electrons in each. However, C is insulator where as Si is intrinsic semiconductor. This is because (1) The four bonding electrons in the case of C ... the case of C lie in the second orbit, whereas in the case of Si they lie in the third

Last Answer : (4) The four bonding electrons in the case of C lie in the second orbit, whereas in the case of Si they lie in the third

Intrinsic semiconductor material is characterized by a valence shell of how many electrons?

Description : Intrinsic semiconductor material is characterized by a valence shell of how many electrons? a) 1 b) 2 c) 4 d) 6

Last Answer : Intrinsic semiconductor material is characterized by a valence shell of 4 electrons.

At room temperature in an intrinsic piece of Si there could be

Description : At room temperature in an intrinsic piece of Si there could be (A) No free carriers (B) Some electrons but no holes (C) Some holes but no electrons (D) Equal number of holes and electrons

Last Answer : No  free   carriers.

At room temperature, an intrinsic silicon crystal acts approximately as ……

Last Answer : At room temperature, an intrinsic silicon crystal acts approximately as An insulator.

In an n-type semiconductor, as the donor concentration ND increases, the Fermi level EF:

Description : In an n-type semiconductor, as the donor concentration ND increases, the Fermi level EF: (1) Remains unaltered (2) Moves towards the conduction band (3) Move towards the center of forbidden energy gap (4) May or may not move depending on temperature 

Last Answer : In an n-type semiconductor, as the donor concentration ND increases, the Fermi level EF: Moves towards the conduction band

Impurity atoms to be added to pure silicon in order to make a p-type semiconductor belongs to

Description : Impurity atoms to be added to pure silicon in order to make a p-type semiconductor belongs to (a) Phosphorous (b) Boron (c) Antimony (d) Aluminium 

Last Answer : Boron  , a  group  three  element.

The advantage of a semiconductor strain gauge cover the wire round strain gauge is that

Description : The advantage of a semiconductor strain gauge cover the wire round strain gauge is that

Last Answer : The advantage of a semiconductor strain gauge cover the wire round strain gauge is that it is more sensitive

The semiconductor used for LEDs emitting in the visible range is

Description : The semiconductor used for LEDs emitting in the visible range is  (a) GaAs (b) GaAlAs (c) GalnAs (d) GaAsP

Last Answer : The semiconductor used for LEDs emitting in the visible range is GaAsP

The polar bonds existing in III-V compound semiconductor, may be considered as equivalent to

Description : The polar bonds existing in III-V compound semiconductor, may be considered as equivalent to  (a) 1 ionic bond and 3 covalent bonds (b) 1 ionic bond and 4 covalent bonds (c) 2 ionic bonds and 2 covalent bonds (d) 2 ionic bonds and 4 covalent bonds

Last Answer : The polar bonds existing in III-V compound semiconductor, may be considered as equivalent to 1 ionic bond and 3 covalent bonds

The material used for ‘doping’ to prepare N - type semiconductor is

Description : The material used for ‘doping’ to prepare N - type semiconductor is

Last Answer : The material used for ‘doping’ to prepare N - type semiconductor is Arsenic

While comparing doped semiconductor vs. un-doped semiconductor, which of the following

Description : While comparing doped semiconductor vs. un-doped semiconductor, which of the following statements is NOT true ? (A) Doped semiconductor has smaller band-gap compared to un-doped semiconductor (B) ... to un-doped semiconductor (D) Doped as well as un-doped semiconductor have equal bandwidth

Last Answer : While comparing doped semiconductor vs. un-doped semiconductor, which of the following statements is NOT true ? (A) Doped semiconductor has smaller band-gap compared to un-doped semiconductor (B) ... to un-doped semiconductor (D) Doped as well as un-doped semiconductor have equal bandwidth

To increase mobility of electron in a given piece of semiconductor

Description : To increase mobility of electron in a given piece of semiconductor (A) Increase overall size of the semiconductor (B) Increase length (C) Increase width (D) Small increase in temperature above room temperature value

Last Answer : To increase mobility of electron in a given piece of semiconductor Small increase in temperature above room temperature value

When the temperature of an extrinsic semiconductor is increased, the pronounced effect is on……

Last Answer : When the temperature of an extrinsic semiconductor is increased, the pronounced effect is on Minority carriers.

In a semiconductor, current conduction is due to ……..

Last Answer : In a semiconductor, current conduction is due to Holes and free electrons.

As the doping to a pure semiconductor increases, the bulk resistance of the semiconductor ………..

Last Answer : As the doping to a pure semiconductor increases, the bulk resistance of the semiconductor Decreases.

The impurity level in an extrinsic semiconductor is about ….. of pure semiconductor.

Last Answer : The impurity level in an extrinsic semiconductor is about 1 atom for 108 atoms of pure semiconductor.

A hole in a semiconductor is defined as …………….

Last Answer : A hole in a semiconductor is defined as The incomplete part of an electron pair bond.

Addition of trivalent impurity to a semiconductor creates many ……..

Last Answer : Addition of trivalent impurity to a semiconductor creates many Holes.

An n-type semiconductor is ………

Last Answer : An n-type semiconductor is Electrically neutral.

Addition of pentavalent impurity to a semiconductor creates many ……..

Last Answer : Addition of pentavalent impurity to a semiconductor creates many Free electrons.

When a pentavalent impurity is added to a pure semiconductor, it becomes ………

Last Answer : When a pentavalent impurity is added to a pure semiconductor, it becomes n-type semiconductor.

The strength of a semiconductor crystal comes from ……..

Last Answer : The strength of a semiconductor crystal comes from Electron-pair bonds.

When a pure semiconductor is heated, its resistance …………..

Last Answer : When a pure semiconductor is heated, its resistance Goes down.

The most commonly used semiconductor is ………..

Last Answer : The most commonly used semiconductor is Silicon.

A semiconductor has ………… temperature coefficient of resistance.

Last Answer : A semiconductor has Negative temperature coefficient of resistance.

The random motion of holes and free electrons due to thermal agitation is called ……….

Last Answer : The random motion of holes and free electrons due to thermal agitation is called Diffusion.

What is the effect of temperature on an intrinsic semiconductor?

Description : What is the effect of temperature on an intrinsic semiconductor?

Last Answer : An intrinsic semiconductor is basically a pure semiconductor, though some might argue that a small amount of doping can still yield an intrinsic semiconductor. In the crystal structure of ... semiconductor has a positive temperature coefficient. More heat, more conduction under the same conditions.

When Arsenic atoms are added Germanium lattice, it becomes a/an - (1) Insulator (2) Superconductor (3) Intrinsic semiconductor (4) Extrinsic semiconductor

Description : When Arsenic atoms are added Germanium lattice, it becomes a/an - (1) Insulator (2) Superconductor (3) Intrinsic semiconductor (4) Extrinsic semiconductor

Last Answer : (4) Extrinsic semiconductor Explanation: When a peritavalent (donor) impurity, like arsenic, is added to germanium, it will form covalent bonds with thegermanium atoms, leaving 1 electron relatively ... this manner - either with Nor P-type impurities - are referred to as EXTRINSIC semiconductors.

Which of the listed conditions describes the effect on intrinsic semiconductor operation as a result of a temperature increase? A. Additional heat sinks will be required B. Conductivity will increase C. Conductivity will decrease D. Resistivity will increase

Description : Which of the listed conditions describes the effect on intrinsic semiconductor operation as a result of a temperature increase? A. Additional heat sinks will be required B. Conductivity will increase C. Conductivity will decrease D. Resistivity will increase

Last Answer : Answer: B

Differentiate between intrinsic and extrinsic semiconductor

Description : Differentiate between intrinsic and extrinsic semiconductor

Last Answer : Pure form of semiconductors are said to be intrinsic semiconductor. Ex: germanium, silicon. It has poor conductivity If certain amount of impurity atom is added to intrinsic semiconductor the resulting semiconductor is Extrinsic or impure Semiconductor It has good conductivity.

It is the made from semiconductor material such as aluminum-galium-arsenide or gallium-arsenide-phosphide. A. APD B. Injection laser diode C. Light emitting diode D. Positive-intrinsic-negative

Description : It is the made from semiconductor material such as aluminum-galium-arsenide or gallium-arsenide-phosphide. A. APD B. Injection laser diode C. Light emitting diode D. Positive-intrinsic-negative

Last Answer : C. Light emitting diode

What is an intrinsic semiconductor or pure semiconductor?

Description : What is an intrinsic semiconductor or pure semiconductor?

Last Answer : A semiconductor in which the number of holes and electrons are equal is called intrinsic orpure semiconductor.

A doped semiconductor is called : a) Extrinsic b) Intrinsic c) Insulator d) Conductor

Description : A doped semiconductor is called : a) Extrinsic b) Intrinsic c) Insulator d) Conductor

Last Answer : b) Intrinsic

n-type semiconductor is an example of (A) extrinsic semiconductor. (B) intrinsic semiconductor. (C) super conductor. (D) insulators..

Description : n-type semiconductor is an example of (A) extrinsic semiconductor. (B) intrinsic semiconductor. (C) super conductor. (D) insulators..

Last Answer : (A) extrinsic semiconductor.

When Arsenic atoms are added to Germanium lattice, it becomes a/an (1) Insulator (2) Superconductor (3) Intrinsic semiconductor (4) Extrinsic semiconductor

Description : When Arsenic atoms are added to Germanium lattice, it becomes a/an (1) Insulator (2) Superconductor (3) Intrinsic semiconductor (4) Extrinsic semiconductor

Last Answer : Extrinsic semiconductor

State the impurities for obtaining p-type and n-type semiconductor from intrinsic semi conductor.

Description : State the impurities for obtaining p-type and n-type semiconductor from intrinsic semi conductor. 

Last Answer : Crystals of Silicon and Germanium are doped using two types of dopants:  1. The impurities for obtaining n-type semiconductor from intrinsic semiconductor are pentavalent impurity; like Arsenic (As), Antimony ... semiconductor are trivalent impurity; like Indium (In), Boron (B), Aluminum (Al), etc.

Define intrinsic and extrinsic semiconductor.

Description : Define intrinsic and extrinsic semiconductor. 

Last Answer : Intrinsic – Semiconductor in pure form is called as intrinsic semiconductor. Extrinsic – Semiconductor with added impurity is called as extrinsic semiconductor.

Compare intrinsic and extrinsic semiconductor

Description : Compare intrinsic and extrinsic semiconductor

Last Answer : Intrinsic semiconductor Extrinsic Semiconductor Pure form of semiconductor Impure form of semiconductor No. electrons and holes are equal  No. of electrons and holes are not equal Electrical ... e.g. Ge, Si semiconductor e.g. p-type or n-type semiconductor

Why is an intrinsic semiconductor doped?

Description : Why is an intrinsic semiconductor doped?

Last Answer : Intrinsic semiconductor is doped in order to increase conductivity of semiconductor. Doping increases majority charge carries either electrons or holes and majority charge carriers responsible for electric current. 

Define (i) Intrinsic semiconductor (ii)Fermi energy level

Description : Define (i) Intrinsic semiconductor (ii)Fermi energy level  

Last Answer : (i) Intrinsic semiconductor: The semiconductor in extremely pure form is called as intrinsic semiconductor.  (ii) Fermi energy level : The energy difference between conduction band and valence band is called as fermi energy level.

n-type semiconductor can be made by adding ____ to intrinsic semiconductor

Description : n-type semiconductor can be made by adding ____ to intrinsic semiconductor (A) Boron (B) Arsenic (C) Carbon (D) Germanium

Last Answer : n-type semiconductor can be made by adding Arsenic to intrinsic semiconductor

At very high temperatures, extrinsic semiconductor becomes intrinsic semiconductor because

Description : At very high temperatures, extrinsic semiconductor becomes intrinsic semiconductor because (A) Of drive in diffusion of dopants & carriers. (B) Band to band transition dominates impurity ionization. (C) ... band to band transition. (D) Band to band transition is balanced by impurity ionisation.

Last Answer : At very high temperatures, extrinsic semiconductor becomes intrinsic semiconductor because Impurity ionization dominates band to band transition.

At room temperature the current in an intrinsic semiconductor is due to

Last Answer : At room temperature, the current in an intrinsic semiconductor is due to holes and electrons.

What is meant by intrinsic semiconductor?

Last Answer : The semiconductor of purest form are called intrinsic semiconductor, (eg. Silicon and germinium) where as semiconductor made up by doping of other semiconductor called extrinsic semiconductor.(again extrinsic semiconductor classified as N type n P type semiconductor) 

A trivalent impurity has ….. valence electrons

Last Answer : A trivalent impurity has 3 valence electrons.

A pentavalent impurity has ………. Valence electrons

Last Answer : A pentavalent impurity has 5 Valence electrons.