A FET is a - - - transistor

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A FET is a Bi-polar transistor

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Related questions

The base of a transistor serves a purpose similar to what element of the FET

Description : The base of a transistor serves a purpose similar to what element of the FET

Last Answer : Gate.

What is one of the primary advantages of the FET when compared to the bipolar transistor?

Description : What is one of the primary advantages of the FET when compared to the bipolar transistor?

Last Answer : High input impedance.

In a transistor, the conventional current flows from base to emitter. The transistor is (a) NPN (b) PNP (c) FET (d) None of these

Description : In a transistor, the conventional current flows from base to emitter. The transistor is (a) NPN (b) PNP (c) FET (d) None of these

Last Answer : (a) NPN

A semiconductor device made up of a single p-n Junction is called a: w) transistor x) diode y) Fet z) integrated circuit

Description : A semiconductor device made up of a single p-n Junction is called a: w) transistor x) diode y) Fet z) integrated circuit

Last Answer : ANSWER: X -- DIODE

A FET is preferred over an ordinary transistor because it

Description : A FET is preferred over an ordinary transistor because it  1. Permits high degree of isolation between input & output circuits 2. Has low noise level 3. Has very high power gain 4. Has all the above properties 

Last Answer : A FET is preferred over an ordinary transistor because it Has all the above properties 

Pinch off voltage of a J FET is the drain to source voltage above which drain current.

Description : Pinch off voltage of a J FET is the drain to source voltage above which drain current. • Increases • Decreases • Remains constant • Becomes zero

Last Answer : Pinch off voltage of a J FET is the drain to source voltage above which drain current Remains constant

An FET is a better chopper than a BJT because it has

Description : An FET is a better chopper than a BJT because it has (A) lower offset voltage (B) higher series ON resistance (C) lower input current (D) higher input impedance

Last Answer : An FET is a better chopper than a BJT because it has lower offset voltage

A FET is essentially a - - - - driven device

Last Answer : A FET is essentially a Voltage driven device

In an FET _______

Last Answer : In an FET One junction has reverse bias on both sides of the junction.

What are the advantages of FET?

Description : What are the advantages of FET?

Last Answer : FET is a constant current device which is controlled by voltage. By varying the input voltage we can control the output current. There are basically two types of FET one is MOSFET and second is JFET . ... as compare to BJT. These are some advantages of FET (Field Effect Transistor).

In the common–emitter transistor circuit, if the current gain is 100 and the collector current is 10 mA, the

Description : In the common–emitter transistor circuit, if the current gain is 100 and the collector current is 10 mA, the base current is: (1) 10 µA (2) 100 µA (3) 1 A (4) 10 A 

Last Answer : In the common–emitter transistor circuit, if the current gain is 100 and the collector current is 10 mA, the base current is: 100 µA

The set of transistor characteristics which enable α to be determined directly from the slope is

Description : The set of transistor characteristics which enable α to be determined directly from the slope is (a) CB transfer characteristics (b) CE transfer characteristics (c) CB input characteristics (d) CE output characteristics

Last Answer : The common base transfer characteristics

In a transistor Colpitts oscillator, C1 = 0.001 µF, C2 = 0.01 µF and L = 5 µH. The frequency of oscillation in

Description : In a transistor Colpitts oscillator, C1 = 0.001 µF, C2 = 0.01 µF and L = 5 µH. The frequency of oscillation in MHz will be (a) 2.37 MHz (b) 10.00 MHz (c) 11.54 MHz (d) 9.09 MHz 

Last Answer : c

A transistor has a typical value of β = 200 , If the collector current is 15 mA, then base current will be

Description : A transistor has a typical value of β = 200 , If the collector current is 15 mA, then base current will be

Last Answer : A transistor has a typical value of β = 200 , If the collector current is 15 mA, then base current will be 0.075 mA

Beta cut-off frequency of a transistor is the frequency at which the Beta is

Description : Beta cut-off frequency of a transistor is the frequency at which the Beta is • 0.707 of low frequency value • Zero • Equal to low frequency value • None of the above.

Last Answer : Beta cut-off frequency of a transistor is the frequency at which the Beta is 0.707 of low frequency value

If a transistor were operated with emitter and collector interchanged, then

Description : If a transistor were operated with emitter and collector interchanged, then  1 .emitter current will increase  2. Collector current will increase  3. Base current will decrease  4. No current flow will take place 

Last Answer : If a transistor were operated with emitter and collector interchanged, then Collector current will increase 

In a transistor

Description : In a transistor  1. Emitter is heavily doped while the collector is moderately doped 2. Collector base junction is forward biased 3. Emitter is made wider than collector 4. The input resistance is much higher than output resistance 

Last Answer : In a transistor Emitter is heavily doped while the collector is moderately doped

In an npn transistor, _____ are the minority carriers.

Description : In an npn transistor, _____ are the minority carriers.   (a) Free electrons (b) Acceptor ions (c) Donor ions (d) Holes

Last Answer : In an npn transistor, Holes are the minority carriers.

A transistor has ________ number of terminals.

Description : A transistor has ________ number of terminals. (A) 2 (B) 3 (C) 1 (D) 4 

Last Answer : A transistor has 3 number of terminals. 

ICB0 in a transistor can be reduced by reducing:

Description : ICB0 in a transistor can be reduced by reducing:  (1) IB (2) VCC (3) IE (4) Temperature

Last Answer : ICB0 in a transistor can be reduced by reducing: Temperature.

A Transistor has - - - PN junctions

Last Answer : A Transistor has Two PN junctions

The most commonly used transistor circuit arrangement - - -

Last Answer :  The most commonly used transistor circuit arrangement Common emitter

The function of Transistor is to do - - -

Last Answer : The function of Transistor is to do Amplification

The encapsulation of transistor is necessary for

Last Answer : The encapsulation of transistor is necessary for mechanical ruggedness.

In a transistor leakage current mainly depends on

Last Answer : In a transistor leakage current mainly depends on temperature.

When a transistor is connected in common emitter mode, it with have

Last Answer : When a transistor is connected in common emitter mode, it with have medium input resistance and high output resistance.

What is the main use of a transistor?

Description : What is the main use of a transistor?

Last Answer : Main use of a transistor as amplifier and as switch.

can transistor amplify dc?

Description : can transistor amplify dc?

Last Answer : No

What is the full form of FET ?

Description : What is the full form of FET ?

Last Answer : The full name of FET is Field effect Transistor

my adopted son has adhd and is Bipolar mixed and I have had him in and out of physc wards since he was 12, now he is 16,and failing 9th grade and apparently doesnt care.talking doesnt work taking things away ie, tv,phone privaleges,etc , Im also fet up ?

Description : my adopted son has adhd and is Bipolar mixed and I have had him in and out of physc wards since he was 12, now he is 16,and failing 9th grade and apparently doesnt care.talking doesnt work taking things away ie, tv,phone privaleges,etc , Im also fet up ?

Last Answer : Bipolar disorder is a very serious MEDICAL condition, and cannot be treated by taking away phone and TV privileges. Your son is in serious need of help; seek out a well-regarded specialist A.S.A.P.

Why is input impedance of the FET very high?

Description : Why is input impedance of the FET very high?

Last Answer : BECAUSE its input circuit (gate to source) is reverse biased and input gate current is very small.

why the bjt is known as current controlled device and fet is known as voltage controlled device ?

Description : why the bjt is known as current controlled device and fet is known as voltage controlled device ?

Last Answer : Ans- 1. In BJT because of the current the output will vary. 2. Where as in FET by means of Voltage the output is varied.

An FET has a gate source bias of 2 V. The ac input signal is ± 1.2 V. The class of operation is A) A B) B C) C D) AB

Description : An FET has a gate source bias of 2 V. The ac input signal is ± 1.2 V. The class of operation is A) A B) B C) C D) AB

Last Answer : D) AB

Applying a reverse bias to the gate of an FET has what effect?

Description : Applying a reverse bias to the gate of an FET has what effect?

Last Answer : Source-to-drain resistance increases.

What is the key to FET operation?

Description : What is the key to FET operation?

Last Answer : Effective cross-sectional area of the channel.

The FET and the vacuum tube have what in common?

Description : The FET and the vacuum tube have what in common?

Last Answer : Voltage controls conduction.

State the classifications of FET devices.

Description : State the classifications of FET devices.

Last Answer : FET is classified as 1. Junction Field Effect Transistor (JFET) 2. Metal oxide semiconductor family (MOS).

State any two applications of FET.

Description : State any two applications of FET.

Last Answer : Applications of FET : As input amplifiers in oscilloscopes, electronic voltmeters and other measuring and testing equipment because high input impedance reduces loading effect to the minimum. As Constant ... Used as Analog switch. As a Voltage Variable Resistor (VVR) in operational amplifiers. 

State and explain the working principle of FET amplifier and list its applications.

Description : State and explain the working principle of FET amplifier and list its applications.

Last Answer : Operation of FET amplifier: When small a.c. signal is applied to the gate, it produces variation in the gate to source voltage. This results in variation in the drain current. As ... input voltage.  Application: Buffer amplifier Low noise amplifier Cascade amplifier Chopper amplifier

Draw the drain characteristics of p-channel FET and explain.

Description : Draw the drain characteristics of p-channel FET and explain.

Last Answer : Drain characteristics:- As VDS is increased from zero as shown , ID will increased proportionally through the p channel. In this region the channel resistance is constants because the depletion region is ... the depletion layer. (i.e. channel width zero) is called cutoff voltage or VGS(off).

Define with respect to FET:- (i) Static drain resistance (ii) Dynamic resistance (iii) Trans conductance (iv) Pinch-off voltage

Description : Define with respect to FET:- (i) Static drain resistance (ii) Dynamic resistance (iii) Trans conductance (iv) Pinch-off voltage

Last Answer : (i) Static drain resistance- It is the ratio of drain source voltage (ΔVDS) to the drain current (ID) at constant gate-source voltage. It can be expressed as, Rd = (VDS)/(ID) at ... of charge carrier and the value of drain current reaches its constant saturation value is called pinch off voltage.

Sketch circuit diagram of common source FET Amplifier. State working principle of it.

Description : Sketch circuit diagram of common source FET Amplifier. State working principle of it.

Last Answer : Working: -  * When small a.c. signal is applied to the gate, it produces variation in the gate to source voltage. This produces variation in the drain current. As the gate to source ... and we get amplification. Thus the AC output voltage VDS is 180º out of phase with AC input voltage.

Comparison of BJT and FET

Description : Comparison of BJT and FET

Last Answer : FET BJT It is unipolar device i.e. current in the device is carried either by electrons or holes It is bipolar device i.e. current in the device is carried either by both ... is comparatively more noisy. It is relatively immune to radiation. It is susceptible to radiation

construction of P-channel J-FET.

Description :  construction of P-channel J-FET.

Last Answer : Construction of P-channel J-FET : The construction diagram of P channel junction field effect transistor (JFET) is shown in above figure. It consist of a P type silicon ... enter the semiconductor bar and Source (S) is a terminal through which the electrons leave the semiconductor. 

Explain N-channel J-FET with its transfer characteristics.

Description : Explain N-channel J-FET with its transfer characteristics.

Last Answer : Working of Channel JFET: Working: 1. The application of negative gate voltage and positive drain voltage with respect to source, reverse biases the gate- source junction of an N-channel JFET. 2. When a ... symbol VP or VGS(OFF) . The value of VP is negative for N-channel JFET. 

Differentiate between N-channel and P-channel J-FET.

Description : Differentiate between N-channel and P-channel J-FET.

Last Answer : N-Channel JFET P-Channel JFET 1.The current conduction takes place due to electrons 1.The current conduction takes place due to holes. 2.Its switching speed and cut off ... It is most widely used in circuit applications 5.It is comparatively less used in circuit applications

State the application of FET

Description : State the application of FET

Last Answer : Applications of FET : * As input amplifiers in oscilloscopes, electronic voltmeters and other measuring and testing equipment because high input impedance reduces loading effect to the minimum. * As Constant ... Used as Analog switch. * As a Voltage Variable Resistor (VVR) in operational amplifiers.

Compare BJT with FET

Description : Compare BJT with FET

Last Answer : FET BJT It is unipolar device i.e. current in the device is carried either by electrons or holes It is bipolar device i.e. current in the device is carried either by ... from minority- carrier storage effects & therefore has lower switching speeds & cut-off frequencies. 

Compare between BJT and FET on the basis of (i) Biolar/Unipolar (ii) Tharmal Runaway (iii) Noise (iv) Applications

Description : Compare between BJT and FET on the basis of (i) Biolar/Unipolar (ii) Tharmal Runaway (iii) Noise (iv) Applications

Last Answer : Parameter BJT FET Bipolar/Unipolar It is bipolar device i.e. current in this device is carried by electrons and holes. It is unipolar device i.e. current ... in oscilloscopes, electronic voltmeters and other measuring and testing equipment because of their high input impedance.

Define pinch off voltage and drain resistance of FET.

Description : Define pinch off voltage and drain resistance of FET.

Last Answer : 1 . Pinch-off Voltage: It is the value of the drain to source voltage VDS at which the drain current ID reaches its constant saturation value. Any further increase in VDS does not have any ... drain to source voltage to the change in drain current. It is also called AC/dynamic drain resistance.