What is MOSFET ?

What is MOSFET ?
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1 Answer

Answer :

The full name of Mosfet is Metal oxide semiconductor field effect transistor. The 'gate' of the mosfet is covered with a thin coating of silicon dioxide , which creates capacitors between the gate and the channel. This is why it is called Insulated Gate Field Effect Transistor ( IGFET) . The metal oxide semiconductor field effect transistor is abbreviated as MOSFET. It is a three-ended semiconductor device whose current flows through the flow of electrons or halves .
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Related questions

What are the different types of power MOSFET?

Description : What are the different types of power MOSFET?

Last Answer : a. N-channel MOSFET b. P-channel MOSFET

Power MOSFET is a voltage controlled device. Why?

Description : Power MOSFET is a voltage controlled device. Why?

Last Answer : Because the output (drain) current can be controlled by gate-source voltage.

For Selecting MOSFET, what are the major parameters we have to consider in the datasheet?

Description : For Selecting MOSFET, what are the major parameters we have to consider in the datasheet?

Last Answer : In MOSFET datasheet, we have to focus on following parameters: Drain to Source Voltage VDSSOn state Drain to Source Resistance RDS(ON)Reverse Recovery Current IRRReverse Recovery Charge ... Charge QG Body Diode Characteristics ID at ambient temperature Channel power dissipation Channel temperature

For High frequency applications will you prefer MOSFET or IGBT? Why?

Description : For High frequency applications will you prefer MOSFET or IGBT? Why?

Last Answer : For High frequency applications, MOSFET is the right choice of the device.Because MOSFET has low switching losses compare to that of IGBT.General rule of thumb is for low-frequency applications ... For high frequency applications having frequency range of more than 200kHz, we have to use MOSFET

For High voltage applications will you prefer MOSFET or IGBT?

Description : For High voltage applications will you prefer MOSFET or IGBT?

Last Answer : For High voltage applications we have to use IGBT. Because MOSFETs are low voltage devices. ie, Their voltage rating is lesser than IGBT. General rule is MOSFETs are suitable for applications ... voltage less than 250V. The IGBTs are suitable for applications which has breakdown voltage upto 1000V.

Which of the following low noise transistors is commonly used at microwave frequencies? A. MOSFET B. GASFET C. MESFET D. JFET

Description : Which of the following low noise transistors is commonly used at microwave frequencies? A. MOSFET B. GASFET C. MESFET D. JFET

Last Answer : C. MESFET

The transistor with the lowest noise figure in the microwave region is a A. MOSFET B. Dual-gate MOSFET C. JFET D. MESFET

Description : The transistor with the lowest noise figure in the microwave region is a A. MOSFET B. Dual-gate MOSFET C. JFET D. MESFET

Last Answer : D. MESFET

Explain how MOSFET functions?

Description : Explain how MOSFET functions?

Last Answer : Ans:There are two ways in which a MOSFET can function. The first is known as depletion mode . When there is no voltage on the gate, the channel exhibits its maximum conductance . As the voltage ... application of a voltage to the gate. The greater the gate voltage, the better the device conducts.

Explain working of MOSFET.

Description : Explain working of MOSFET.

Last Answer : MOSFET is a special type of field-effect transistor ( FET ) that works by electronically varying the width of a channel along which charge carriers flow. The wider the channel, the better the ... source and the drain and is insulated from the channel by an extremely thin layer of metal oxide.

What is MOSFET?

Description : What is MOSFET?

Last Answer : MOSFET stands for Metal oxide Semiconductor field effect transistor. A type of transistor that is controlled by voltage rather than current.

Which is the most suitable power device for high frequency ( more 100 kHz) switching application? a) Power MOSFET b) BJT c) SCR d) UJT

Description : Which is the most suitable power device for high frequency ( more 100 kHz) switching application? a) Power MOSFET b) BJT c) SCR d) UJT

Last Answer : Ans: Power MOSFET

A modern power semiconductor device IGBT is combines the characteristics of a) BJT and MOSFET b) FCT and GTO c) SCR and MOSFET d) SCR and BJT

Description : A modern power semiconductor device IGBT is combines the characteristics of a) BJT and MOSFET b) FCT and GTO c) SCR and MOSFET d) SCR and BJT

Last Answer : Ans: BJT and MOSFET

What is the purpose of the spring or wire around the leads of a new MOSFET?

Description : What is the purpose of the spring or wire around the leads of a new MOSFET?

Last Answer : To prevent damage from static electricity.

What type of MOSFET can be independently controlled by two separate signals?

Description : What type of MOSFET can be independently controlled by two separate signals?

Last Answer : The dual-gate MOSFET.

. In a MOSFET, which element is insulated from the channel material?

Description : . In a MOSFET, which element is insulated from the channel material?

Last Answer : The gate terminal.

The substrate of an N-channel MOSFET is made of what material?

Description : The substrate of an N-channel MOSFET is made of what material?

Last Answer : P-type material.

What are the four elements of the MOSFET?

Description : What are the four elements of the MOSFET?

Last Answer : Gate, source, drain, and substrate.

When compared to the JFET, what is the input impedance of the MOSFET?

Description : When compared to the JFET, what is the input impedance of the MOSFET?

Last Answer : The MOSFET has a higher input impedance.

A MOSFET can be damaged by an electrostatic discharge at approximately what minimum potential?

Description : A MOSFET can be damaged by an electrostatic discharge at approximately what minimum potential?

Last Answer : 35 volts.

MOSFET stands for? a. Metal-oxide-semiconductor field effect transistor b. Metal-oxide-semiconductor fan effort transistor c. Both A and B d. None of these

Description : MOSFET stands for? a. Metal-oxide-semiconductor field effect transistor b. Metal-oxide-semiconductor fan effort transistor c. Both A and B d. None of these

Last Answer : a. Metal-oxide-semiconductor field effect transistor

Number of Terminals in a MOSFET are (A) Two (B) Three (C) Four (D) Five

Description : Number of Terminals in a MOSFET are (A) Two (B) Three (C) Four (D) Five

Last Answer : (B) Three

Which type of MOSFET is called Normally ON MOSFET”? Why?

Description : Which type of MOSFET is called Normally ON MOSFET”? Why? 

Last Answer : DMOSFET is called Normally ON MOSFET. In DMOSFET already channel is present and at Vgs = 0v, drain current Id=Idss i.e. drain to source saturation current is flowing. 

Draw the construction of p-channel D-MOSFET and state its working principle.

Description : Draw the construction of p-channel D-MOSFET and state its working principle. 

Last Answer : Construction of p-channel D-MOSFET: Working principle: The gate to source voltage is set to zero volts by the direct connection from one terminal to the other & voltage VDS is applied ... The value of voltage of VGS at which drain current nearly becomes zero is called cut off voltage. 

Draw symbol for n-channel and p-channel MOSFET.

Description : Draw symbol for n-channel and p-channel MOSFET.

Last Answer : Symbol n-channel and p-channel MOSFET :   OR  

State advantages of MOSFET over JFET.

Description : State advantages of MOSFET over JFET.

Last Answer : ➨It can be operated in either enhancement mode or depletion mode. ➨MOSFET have much higher input impedance compare to JFET. ➨They have high drain resistance due to lower resistance of channel. ➨It is easy to manufacture. ➨They support high speed of operation compare to JFETs.

State advantages of MOSFET.

Description : State advantages of MOSFET.

Last Answer : Advantages of MOSFET * MOSFETs provide greater efficiency while operating at lower voltages. * Absence of gate current results in high input impedance. * High switching speed. * They operate at lower ... due to lower resistance of channel. * They are easy to manufacture. * They are portable.

Describe with neat sketch the construction and working principle of MOSFET.

Description : Describe with neat sketch the construction and working principle of MOSFET.

Last Answer : Construction and working principle of MOSFET:  A) Depletion type MOSFET: Construction: The N-channel depletion type MOSFET is formed on P-type silicon substrate with two heavily ... accumulation of electrons and hence more current. Thus the MOSFET is a gate voltage controlled device.

State the applications of MOSFET

Description : State the applications of MOSFET

Last Answer : Applications of MOSFET: i) Switching-mode-power-supplies (SMPS) and linear power supplies. ii) Brushless DC motor drives iii) Solid state DC relay iv) Automobile applications v) Stepper motor controller vi) Lighting controls vii) Solenoid drivers viii) Robotics ix) Induction heating

Working principal of MOSFET ?

Last Answer : MOSFET's having two types i.e 1- Enhancement type, and another one is Depletion type, when +Vgs supply through Gate to field effect transistor it will act as a Enhancement type ... channel increases and size of Depletion layer decreases and also resitance decreases and flow of current increases.

Compare JFET with MOSFET.

Description : Compare JFET with MOSFET.

Last Answer : Particulars JFET MOSFET 1) Type Voltage controlled device Voltage controlled device 2) Mode of operation Operates only in depletion mode Operates in depletion and enhancement ... 6) Gate connection Not isolated from substrate Isolated by SiO2 layer from substrate

Describe the operation of N channel enhancement type MOSFET with diagram.

Description : Describe the operation of N channel enhancement type MOSFET with diagram.

Last Answer : As its name indicates, this MOSFET operates only in the enhancement mode and has no depletion mode. It operates with large positive gate voltage only. It does not conduct when the ... of charge carriers attracted to the positive gate. Thus drain current is controlled by the gate potential.

A certain power MOSFET has a maximum junction temperature specification of 1500o C, a junction-to-case

Description : A certain power MOSFET has a maximum junction temperature specification of 1500o C, a junction-to-case thermal resistance of 1.00 C/W, and a junction-to ambient thermal resistance of 600 C/W. If the ambient temperature is 300o C ... the device will be A) 1.52 W B) 1.72 W C) 1.92W D) 2.00 W

Last Answer : A certain power MOSFET has a maximum junction temperature specification of 1500o C, a junction-to-case thermal resistance of 1.00 C/W, and a junction-to ambient thermal resistance of  ... 300o C, then the maximum allowable power dissipation in the device will be 2.00 W 

When does the Body bias effect occur in an n-channel MOSFET?

Description : When does the Body bias effect occur in an n-channel MOSFET?  A) When the Source voltage is less the Bulk voltage B) When the Source voltage is equal to or greater the Bulk voltage C) When the Drain voltage is equal to the Bulk voltage D) When the Gate voltage is equal to the Bulk Voltage 

Last Answer : When does the Body bias effect occur in an n-channel MOSFET?  A) When the Source voltage is less the Bulk voltage B) When the Source voltage is equal to or greater the Bulk voltage C) ... voltage is equal to the Bulk voltage D) When the Gate voltage is equal to the Bulk Voltage 

Assume that the n—channel MOSFET shown in figure is ideal and that its threshold voltage is +1 .0 V.

Description : Assume that the n-channel MOSFET shown in figure is ideal and that its threshold voltage is +1 .0 V. The voltage Vab between nodes a and b is A)5V B)2V C)1V D)0V

Last Answer : Assume that the n-channel MOSFET shown in figure is ideal and that its threshold voltage is +1 .0 V. The voltage Vab between nodes a and b is 0V

The conduction loss versus device current characteristic of a power MOSFET is best approximated by

Description : The conduction loss versus device current characteristic of a power MOSFET is best approximated by (A) a parabola (B) a straight line (C) a rectangular hyperbola (D) an exponentially decaying function

Last Answer : The conduction loss versus device current characteristic of a power MOSFET is best approximated by a parabola

A depletion MOSFET differs from a JFET in the sense that it has no

Description : A depletion MOSFET differs from a JFET in the sense that it has no   (A) channel (B) gate (C) P-N junctions (D) substrate

Last Answer : A depletion MOSFET differs from a JFET in the sense that it has no P-N junctions 

As compared to power MOSFET, a BJT has

Description : As compared to power MOSFET, a BJT has  (a) Lower switching losses but higher conduction losses (b) Higher switching losses and higher conduction losses (c) Higher switching losses but lower conduction losses (d) Lower switching losses and lower conduction losses. 

Last Answer : As compared to power MOSFET, a BJT has Higher switching losses but lower conduction losses 

The MOSFET to act as an amplifier is biased in

Description : The MOSFET to act as an amplifier is biased in  (A) cut-off region (B) saturation region (C) triode region (D) any of the above regions

Last Answer : The MOSFET to act as an amplifier is biased in  saturation region

In a n-channel MOSFET, an inversion layer is

Description : In a n-channel MOSFET, an inversion layer is  (A) accumulation of electrons near the surface of the substrate under the gate  (B) accumulation of electrons near the drain  (C) accumulation of electrons near the surface  (D) accumulation of hole in the substrate

Last Answer : In a n-channel MOSFET, an inversion layer is accumulation of electrons near the surface of the substrate under the gate 

To increase size of a MOSFET transistor

Description : To increase size of a MOSFET transistor (A) Increase width only (B) Increase length only (C) Increase both width and length (D) None of the above

Last Answer : To increase size of a MOSFET transistor Increase width only

The threshold voltage of an n- channel enhancement mode MOSFET is 0.5V when the device is biased at

Description : The threshold voltage of an n- channel enhancement mode MOSFET is 0.5V when the device is biased at a gate voltage of 3V. Pinch off would be occurs at a drain voltage of (A) 1.5V (B) 2.5V (C) 3.5V (D) 4.5V

Last Answer : The threshold voltage of an n- channel enhancement mode MOSFET is 0.5V when the device is biased at a gate voltage of 3V. Pinch off would be occurs at a drain voltage of 2.5V

Which phenomenon is present in thyristors but absent in BJT, MOSFET and IGBT ?

Description : Which phenomenon is present in thyristors but absent in BJT, MOSFET and IGBT ? (A) forward conduction (B) latching (C) forward blocking (D) reverse breakdown

Last Answer : Which phenomenon is present in thyristors but absent in BJT, MOSFET and IGBT ? (A) forward conduction (B) latching (C) forward blocking (D) reverse breakdown

In a dc-ac 3-phase MOSFET bridge inverter circuit, the switches are marked in a sequence as 1, 2, 3 in the...

Description : In a dc-ac 3-phase MOSFET bridge inverter circuit, the switches are marked in a sequence as 1, 2, 3 in the top-half and 4, 5, 6 in the bottom half of the bridge. The triggering sequence of switches that gives balanced output voltage is (A) 1 ... 3, 4, 2, 6 (C) 1, 6, 2, 4, 3, 5 (D) 1, 4, 2, 5, 3, 6

Last Answer : In a dc-ac 3-phase MOSFET bridge inverter circuit, the switches are marked in a sequence as 1, 2, 3 in the top-half and 4, 5, 6 in the bottom half of the bridge. The triggering sequence of switches that gives balanced output voltage is 1, 6, 2, 4, 3, 5

Fill in the blank(s) with the appropriate word(s) i. A MOSFET operates in the ________________ mode when vGS < vGS(th)

Description : Fill in the blank(s) with the appropriate word(s)  i. A MOSFET operates in the ________________ mode when vGS < vGS(th)  ii. In the ohmic region of operation of a MOSFET vGS - vGS (th) ... ix. The safe operating area of a MOSFET is restricted on the left hand side by the ________________ limit. 

Last Answer : i. A MOSFET operates in the Cut off mode when vGS < vGS(th) ii. In the ohmic region of operation of a MOSFET vGS - vGS (th) is greater than vDS. iii. rDS (ON) of a MOSFET decreases ... Distributed under Creative Commons Attribution-ShareAlike - CC BY-SA. Version 2 EE IIT, Kharagpur

Steady state output i-v characteristics of a MOSFET

Last Answer : Steady state output i-v characteristics of a MOSFET   The MOSFET, like the BJT is a three terminal device where the voltage on the gate terminal controls the flow of current between the ... Distributed under Creative Commons Attribution-ShareAlike - CC BY-SA. Version 2 EE IIT, Kharagpur

What are the main constructional differences between a MOSFET and a BJT? What effect do they ...

Description : What are the main constructional differences between a MOSFET and a BJT? What effect do they have on the current conduction mechanism of a MOSFET? 

Last Answer : A MOSFET like a BJT has alternating layers of p and n type semiconductors. However, unlike BJT the p type body region of a MOSFET does not have an external electrical connection. The gate ... .  Distributed under Creative Commons Attribution-ShareAlike - CC BY-SA. Version 2 EE IIT, Kharagpur

Metal Oxide Semiconductor Field Effect Transistor (MOSFET)

Description : Metal Oxide Semiconductor Field Effect Transistor (MOSFET)

Last Answer : MOSFET (Metal Oxide Semiconductor Field Effect Transistor) Field effect transistor (Electric field control electrical behavior) Change conductivity from applied voltage Switching or amplifying Three terminal ... mode and Depletion mode Subtypes P-channel and N-channel

A MOSFET has how many terminals?

Description : A MOSFET has how many terminals?

Last Answer : A MOSFET having three terminals 1st one is Gate (insulated), 2nd one is Source and 3rd one is Drain.

What is channel length modulation in MOSFET?

Description : What is channel length modulation in MOSFET?

Last Answer : Shortening of lenght of the inverted channel region with increase in drain bias for large drain biases due to which current increases with drain bias and output resistance decreases is called channel length modulation in MOSFET.

Why Mosfet is called Mosfet?

Description : Why Mosfet is called Mosfet?

Last Answer : Why Mosfet is called Mosfet?