In a p-type semiconductor, Which are the majority charge carriers? -Do You Know?

In a p-type semiconductor, Which are the majority charge carriers? -Do You Know?
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What are the majority carriers in a P-type semiconductor?

Description : What are the majority carriers in a P-type semiconductor?

Last Answer : Holes.

In p-type semiconductor the majority carriers are (A) holes. (B) electrons. (C) positive ions. (D) negative ions.

Description : In p-type semiconductor the majority carriers are (A) holes. (B) electrons. (C) positive ions. (D) negative ions.

Last Answer : (A) holes.

In a P-type semiconductor the charge carriers are a) Electrons b) Holes c) Protons d) Neutrons

Description : In a P-type semiconductor the charge carriers are a) Electrons b) Holes c) Protons d) Neutrons

Last Answer : b) Holes

The majority charge carriers in p-type silicon are (A) Free electrons (B) Ions (C) Conduction electrons (D) Holes

Description : The majority charge carriers in p-type silicon are (A) Free electrons (B) Ions (C) Conduction electrons (D) Holes

Last Answer : Option D

What are the majority carriers in an N-type semiconductor?

Description : What are the majority carriers in an N-type semiconductor?

Last Answer : Electrons.

Majority carriers in n type semiconductor are_______.

Description : Majority carriers in n type semiconductor are_______. A. Electrons B. Holes C. Both D. None

Last Answer : Majority carriers in n type semiconductor are Electrons.

N-type region has majority charge carriers as (a) Holes (b) protons (c) neutrons (d) electrons

Description : N-type region has majority charge carriers as (a) Holes (b) protons (c) neutrons (d) electrons

Last Answer : (d) electrons

Holes are majority carriers in (A) P-type semiconductors. (B) N-type semiconductors. (C) Insulators. (D) Superconductors.

Description : Holes are majority carriers in (A) P-type semiconductors. (B) N-type semiconductors. (C) Insulators. (D) Superconductors.

Last Answer : (A) P-type semiconductors.

Barrier potential in a P-N junction is caused by (A) Thermally generated electrons and holes. (B) Diffusion of majority carriers across the junction. (C) Migration of minority carriers across the junction. (D) Flow of drift current.

Description : Barrier potential in a P-N junction is caused by (A) Thermally generated electrons and holes. (B) Diffusion of majority carriers across the junction. (C) Migration of minority carriers across the junction. (D) Flow of drift current.

Last Answer : (B) Diffusion of majority carriers across the junction.

The dominant charge carriers in p-type semiconductors are: w) neutrons x) electrons y) protons z) holes

Description : The dominant charge carriers in p-type semiconductors are: w) neutrons x) electrons y) protons z) holes

Last Answer : ANSWER: Z -- HOLES

The majority carriers in N-type substance are a) Holes b) Protons c) Neutrons d) Electrons

Description : The majority carriers in N-type substance are a) Holes b) Protons c) Neutrons d) Electrons

Last Answer : d) Electrons

In N-type semiconductors the majority of the carriers are: w) holes x) electrons y) protons z) neutrons

Description : In N-type semiconductors the majority of the carriers are: w) holes x) electrons y) protons z) neutrons 

Last Answer : ANSWER: X -- ELECTRONS

In a single crystal of an intrinsic semiconductor, the number of free carriers at the Fermi level at room

Description : In a single crystal of an intrinsic semiconductor, the number of free carriers at the Fermi level at room temperature is: A) Half the total number of electrons in the crystal B) Zero C) Half the number of atoms in the crystal D) Half the number of free electrons in the crystal

Last Answer : In a single crystal of an intrinsic semiconductor, the number of free carriers at the Fermi level at room temperature is: Zero 

The part of transistor which is heavily doped to produce a large number of majority carriers is –

Description : The part of transistor which is heavily doped to produce a large number of majority carriers is –

Last Answer : Emitter

The part of transistor which is heavily doped to produce a large number of majority carriers is

Description : The part of transistor which is heavily doped to produce a large number of majority carriers is

Last Answer : Emitter

What are the majority current carriers in a PNP transistor?

Description : What are the majority current carriers in a PNP transistor?

Last Answer : Holes.

A part of transistor which is heavily doped to produce large number of majority carriers is (a) Emitter (b) Base (c) Collector (d) any of above

Description : A part of transistor which is heavily doped to produce large number of majority carriers is (a) Emitter (b) Base (c) Collector (d) any of above

Last Answer : (a) Emitter

Forward current through a semi-conductor diode circuit is due to ________ (a) Minority carriers (b) majority carriers (c) holes (d) electrons

Description : Forward current through a semi-conductor diode circuit is due to ________ (a) Minority carriers (b) majority carriers (c) holes (d) electrons

Last Answer : (b) majority carriers

When a semiconductor is doped with a P-type impurity, each impurity atom will (A) acquire negative charge. (B) acquire positive charge. (C) remain electrically neutral. (D) give away one electron.

Description : When a semiconductor is doped with a P-type impurity, each impurity atom will (A) acquire negative charge. (B) acquire positive charge. (C) remain electrically neutral. (D) give away one electron.

Last Answer : (A) acquire negative charge.

The reverse current through semiconductor diode is due to (a) Minority carrier (b) majority carrier (c) electrons (d) holes

Description : The reverse current through semiconductor diode is due to (a) Minority carrier (b) majority carrier (c) electrons (d) holes

Last Answer : (a) Minority carrier

A current of 5 ampere is passing through a metallic wire of cross-sectional area `4xx10^(-6) m^(2)`. If the density of the charge-carriers in the wire

Description : A current of 5 ampere is passing through a metallic wire of cross-sectional area `4xx10^(-6) m^(2)`. If the density of the charge-carriers in the wire

Last Answer : A current of 5 ampere is passing through a metallic wire of cross-sectional area `4xx10^(-6) m^(2)`. If the ... ms^(-1)` D. `1xx10^(-2)ms^(-1)`

The dimensions of mobility of charge carriers are

Description : The dimensions of mobility of charge carriers are

Last Answer : The dimensions of mobility of charge carriers are A. `[M^(-2)T^(2)A]` B. `[M^(-1)T^(2)A]` C. `M^(-2)T^(3)A]` D. `[M^(-1)T^(3)A]`

A conducting wire of cross-sectional area `1 cm^(2)` has `3 xx 10^(23)` charge carriers per m3. If wire carries a current of `24 mA`, then drift veloc

Description : A conducting wire of cross-sectional area `1 cm^(2)` has `3 xx 10^(23)` charge carriers per m3. If wire carries a current of `24 mA`, then drift veloc

Last Answer : A conducting wire of cross-sectional area `1 cm^(2)` has `3 xx 10^(23)` charge carriers per m3. If wire carries ... 3)ms^(-1)` D. `5xx10^(-6)ms^(-1)`

In free space, the charge carriers will be a) 0 b) 1 c) 100 d) Infinity

Description : In free space, the charge carriers will be a) 0 b) 1 c) 100 d) Infinity

Last Answer : a) 0

The emitter of a transistor is doped the heaviest because it: (a) Acts as a supplier of charge carriers (b) Dissipates maximum power c) has a large resistance (d) has a small resistance

Description : The emitter of a transistor is doped the heaviest because it: (a) Acts as a supplier of charge carriers (b) Dissipates maximum power c) has a large resistance (d) has a small resistance

Last Answer : (a) Acts as a supplier of charge carriers

How the charge Carriers are created?

Description : How the charge Carriers are created?

Last Answer : Charge Carriers are created if the electrons is removed from atom .

A thin P-type silicon sample is uniformly illuminated with light which generates excess carriers.

Description : A thin P-type silicon sample is uniformly illuminated with light which generates excess carriers. The recombination rate is directly proportional to (A) the minority carrier mobility (B ... lifetime (C) the majority carrier concentration (D) the excess minority carrier concentration

Last Answer : A thin P-type silicon sample is uniformly illuminated with light which generates excess carriers. The recombination rate is directly proportional to the excess minority carrier concentration

In the given types of polarisation, which type exists in the semiconductor? a) Electronic b) Ionic c) Orientational d) Interfacial or space charge

Description : In the given types of polarisation, which type exists in the semiconductor? a) Electronic b) Ionic c) Orientational d) Interfacial or space charge

Last Answer : d) Interfacial or space charge

In the N-type semiconductor the charge carries are a) Holes b) Neutrons c) Protons d) Electrons

Description : In the N-type semiconductor the charge carries are a) Holes b) Neutrons c) Protons d) Electrons

Last Answer : d) Electrons

6 The blood-brain barrier, which restricts entry of many drugs into brain, is constituted by: A. P-glycoprotein efflux carriers in brain capillary cells B. Tight junctions between endothelial cells of brain capillaries C. Enzymes present in brain capillary walls D. All of the above

Description : 6 The blood-brain barrier, which restricts entry of many drugs into brain, is constituted by: A. P-glycoprotein efflux carriers in brain capillary cells B. Tight junctions between endothelial cells of brain capillaries C. Enzymes present in brain capillary walls D. All of the above

Last Answer : D. All of the above

The blood-brain barrier, which restricts entry of many drugs into brain, is constituted by: A. P-glycoprotein efflux carriers in brain capillary cells B. Tight junctions between endothelial cells of brain capillaries C. Enzymes present in brain capillary walls D. All of the above

Description : The blood-brain barrier, which restricts entry of many drugs into brain, is constituted by: A. P-glycoprotein efflux carriers in brain capillary cells B. Tight junctions between endothelial cells of brain capillaries C. Enzymes present in brain capillary walls D. All of the above

Last Answer : D. All of the above

The blood-brain barrier, which restricts entry of many drugs into brain, is constituted by: A. P-glycoprotein efflux carriers in brain capillary cells B. Tight junctions between endothelial cells of brain capillaries C. Enzymes present in brain capillary walls D. All of the above

Description : The blood-brain barrier, which restricts entry of many drugs into brain, is constituted by: A. P-glycoprotein efflux carriers in brain capillary cells B. Tight junctions between endothelial cells of brain capillaries C. Enzymes present in brain capillary walls D. All of the above

Last Answer : D. All of the above

Explain the formation of a p-type semiconductor.

Description : Explain the formation of a p-type semiconductor.

Last Answer : When a small amount of a trivalent impurity like Boron, Indium, Aluminium or Gallium is added to a tetra valant element like Silicon or Germanium, three electrons of each impurity atoms ... and becomes n-type semiconductor. In an ntype semiconductor the majority charge carriers are holes.

Classify each of the following as being either a p-type or an n-type Semiconductor.

Description : Classify each of the following as being either a p-type or an n-type Semiconductor.

Last Answer : (a) Ge dopped with In----p-type. (b) B dopped with Si----n-type.

A semiconductor formed by addition of trivalent impurity is : a) P–Type b) N–Type c) Q–type d) M–Type

Description : A semiconductor formed by addition of trivalent impurity is : a) P–Type b) N–Type c) Q–type d) M–Type

Last Answer : d) M–Type

Hall effect may be used for which of the following? (A) determining whether the semiconductor is p or n type. (B) determining the carrier concentration. (C) calculating the mobility. (D) All the above.

Description : Hall effect may be used for which of the following? (A) determining whether the semiconductor is p or n type. (B) determining the carrier concentration. (C) calculating the mobility. (D) All the above.

Last Answer : (D) All the above. Ans: D Determining whether the semiconductor is p or n type, determining the carrier concentration, calculating the mobility

A P-type semiconductor is doped to produce one of the following. Will it produce: w) both holes and electrons x) positive electrons y) negative electrons z) holes

Description : A P-type semiconductor is doped to produce one of the following. Will it produce: w) both holes and electrons x) positive electrons y) negative electrons z) holes

Last Answer : ANSWER: Z -- HOLES

State the impurities for obtaining p-type and n-type semiconductor from intrinsic semi conductor.

Description : State the impurities for obtaining p-type and n-type semiconductor from intrinsic semi conductor. 

Last Answer : Crystals of Silicon and Germanium are doped using two types of dopants:  1. The impurities for obtaining n-type semiconductor from intrinsic semiconductor are pentavalent impurity; like Arsenic (As), Antimony ... semiconductor are trivalent impurity; like Indium (In), Boron (B), Aluminum (Al), etc.

Explain the p-type semiconductor.

Description : Explain the p-type semiconductor.  

Last Answer : 1) Trivalent impurity is added to a pure semiconductor it is called P-type semiconductor. 2) Some trivalent impurities are gallium , indium ,boron, aluminium etc. These impurities provide large ... )So they are called as majority carriers and electrons are called minority charge carriers.

Distinguish between P-type and N-type semiconductor.

Description : Distinguish between P-type and N-type semiconductor. 

Last Answer : N- type Semiconductor P- type Semiconductor When small amount of pentavalent impurity is added to a pure semiconductor is called N-type semiconductor When small amount of trivalent impurity ... of electrons The electrons are majority carriers The holes are majority carriers

Impurity atoms to be added to pure silicon in order to make a p-type semiconductor belongs to

Description : Impurity atoms to be added to pure silicon in order to make a p-type semiconductor belongs to (a) Phosphorous (b) Boron (c) Antimony (d) Aluminium 

Last Answer : Boron  , a  group  three  element.

In a P type semiconductor

Last Answer : In a P type semiconductor At room temperature the hole concentration equals the acceptor concentration

NMOS stands for: a. N-channel metal-oxide-semiconductor b. P-channel metal-oxide-semiconductor c. N-channel memory-oxide-semiconductor d. All the above

Description : NMOS stands for: a. N-channel metal-oxide-semiconductor b. P-channel metal-oxide-semiconductor c. N-channel memory-oxide-semiconductor d. All the above

Last Answer : a. N-channel metal-oxide-semiconductor

PMOS stands for: a. P-channel metal-oxide-semiconductor b. P-channel memory –oxide-semiconductor c. Both A and B d. None of these

Description : PMOS stands for: a. P-channel metal-oxide-semiconductor b. P-channel memory –oxide-semiconductor c. Both A and B d. None of these

Last Answer : a. P-channel metal-oxide-semiconductor

In a semiconductor diode, p-side is earthed and to n-side is applied a potential of -2 volt; the diode shall (a) Conduct (b) Not conduct (c) Conduct partially (d) Break down

Description : In a semiconductor diode, p-side is earthed and to n-side is applied a potential of -2 volt; the diode shall (a) Conduct (b) Not conduct (c) Conduct partially (d) Break down

Last Answer : a) Conduct

A semiconductor device made up of a single p-n Junction is called a: w) transistor x) diode y) Fet z) integrated circuit

Description : A semiconductor device made up of a single p-n Junction is called a: w) transistor x) diode y) Fet z) integrated circuit

Last Answer : ANSWER: X -- DIODE

Minority carriers in N-type are a) Holes b) Electrons c) Neutrons d) Protons

Description : Minority carriers in N-type are a) Holes b) Electrons c) Neutrons d) Protons

Last Answer : a) Holes

Why do cell phone carriers push you to always upgrade your phone?

Description : Why do cell phone carriers push you to always upgrade your phone?

Last Answer : This last guy couldn't understand why I didn't have a smartphone, I told him very abruptly my dislike for smartphones, and he told me , well they still make the flip at least up grade to a new flip ... with my phone and if it dies I will upgrade then and not before, he just couldn't understand that.

What do you think of the US Navy's new carrier's price tag?(Details)

Description : What do you think of the US Navy's new carrier's price tag?(Details)

Last Answer : I think we should hold off on naval expansion and use the money for investigating government corruption by corporations, and for education and environmental protection, instead.

Do you know the steps to switching cellular carriers?

Description : Do you know the steps to switching cellular carriers?

Last Answer : What is Project Fi?