Please Log in or Register for more.

Justify the statements.

1. IGBT uses a vertically oriented structure.

2. IGBT is preferred as a power switch over both power BJT and MOSFET.

3. Punch through IGBT structure are more popular and are widely used.

3.0k views

1 Answer

Answer :

 
✔️✔️Best answer

1. IGBT uses vertically oriented structure.

IGBT use vertically oriented structure to reduce the resistance and to increase the current flow area.
Hence IGBT uses vertically oriented structure.

2. IGBT is preferred as a power switch over both power BJT and MOSFET.
IGBT combines the qualities of BJT and MOSFET. The high switching speed of MOSFET and low conduction losses of BJT. Also, IGBT have low on-state losses as compared to BJT and MOSFET. IGBT have high input impedance. IGBT is a voltage controlled device, so the drive circuit of IGBT is simple. The current rating and voltage rating of IGBT is better as compare to BJT and MOSFET. The turn off time of IGBT is greater than MOSFET. Bipolar Junction transistor (BJT) have the second breakdown problem, but IGBT do not have second breakdown problem. So, IGBT combines the advantages of BJT and MOSFET hence, IGBT is preferred as a power switch over both BJT and MOSFET.

3. Punch through IGBT structure are more popular and are widely used.
Punch through IGBT have n+ buffer layer. In punch through IGBT the n+ buffer layer is in between n- and p+ layer. This n+ layer is for increasing the blocking voltage. Punch through IGBT have faster turn off. The on state losses will be less in punch through IGBT because of small n- drift region. Punch through IGBT is suitable for DC circuit applications. Hence punch through IGBT structure are more popular and are widely used.
Like 0 like

Please log in or register to answer this question.

Related Questions


Describe with neat sketch the constructional details of IGBT.
Last Answer : Construction: Insulated gate bipolar transistor or IGBT, is a solid state devices primarily used as an electronic switch which, as it was developed, came to combine high efficiency and fast ... layer and p+ emitter constitute a BJT with a wide base region and hence small current gain.

Show More

248 views 1 answer







Draw construction of IGBT.
Last Answer : construction of IGBT

Show More

362 views 1 answer







Which phenomenon is present in thyristors but absent in BJT, MOSFET and IGBT ? (A) forward conduction (B) latching (C) forward blocking (D) reverse breakdown
Last Answer : Which phenomenon is present in thyristors but absent in BJT, MOSFET and IGBT ? (A) forward conduction (B) latching (C) forward blocking (D) reverse breakdown

Show More

3.2k views 1 answer







Compare BJT, MOSFET and IGBT .
Last Answer : BJT MOSFET IGBT BJT is a current controlled device. MOSFET is a voltage controlled device. IGBT is a voltage controlled device. The input impedance of BJT is low. ... is minority carrier device. MOSFET is majority carrier device. IGBT is minority carrier device.

Show More

448 views 1 answer








Last Answer : Because it has a higher switching frequency and heat tolerance.

Show More

143 views 1 answer







Also, highlight the problem faced during parallel operation.
Last Answer : Parallel operation of IGBT: Parallel operation of IGBT is done for obtaining high current rating. Paralleling of IGBT reduces conduction losses and thermal stress. IGBT combines the qualities of ... . IGBTs must share losses equally otherwise IGBT may get failure due to thermal differences.

Show More

223 views 1 answer








Last Answer : No, IGBT is not the current controlled device. IGBT is a voltage controlled device. IGBT have combine qualities of MOSFET and BJT. The high switching speed of MOSFET and low conduction losses of BJT. Also, IGBT which stands for Insulated Gate Bipolar Transistor have high input impedance.

Show More

216 views 1 answer








Last Answer : IGBT is a bipolar device.

Show More

322 views 1 answer








Last Answer :  IGBT or Insulated Gate Bi-polar Transistors are typically semiconductor devices aka.  controlled switches,  which find their applications in Power Electronics circuits such as Inverters, and electrical ... ( buy implementing suitable Pulse Width Modulation scheme ) * Lower cost 

Show More

95 views 1 answer








Last Answer : IGBT is a bipolar device because current is carried by both holes and electrons.

Show More

136 views 1 answer








Last Answer : ON state losses of IGBT is less as compared to MOSFET and BJT.

Show More

141 views 1 answer







What is the permissible flux density in case of cold rolled grained oriented steel?
Last Answer : The permissible flux density in case of cold rolled grained oriented steel is 1.7 Wb/m2.

Show More

136 views 1 answer







Give the applications of IGBT
Last Answer : 1) AC and DC motor drives 2) SMPS 3) Inverters 4) Choppers 5) Solid-state Relays 6) solid-state Contactors

Show More

69 views 1 answer







The number of terminals present in IGBT is A) 2 B) 3 C) 4 D) 5
Last Answer : The number of terminals present in IGBT is 3

Show More

83 views 1 answer








Last Answer : Yes IGBT is costlier than BJT and MOSFET.

Show More

2.6k views 1 answer







Describe IS – 95 forward link channel structure.
Last Answer : The IS-95 forward Channel structure consists of four types of logical Channels - pilot Channel, synchronization Channel, paging Channel, and forward traffic Channels. Each forward carrier Channel contains one ... . This code is known as the channel identifier. This code is different for each user

Show More

90 views 1 answer








Last Answer : The torque produced in induction type relay (shaded pole structure) is inversely proportional to the square of the current.

Show More

829 views 1 answer







EPROM internal structure
Last Answer : EPROM (Erasable Programmable ROM): EPROM stands for Erasable Programmable ROM.Data is stored in EPROM memory cell as an electrostatic charge on highly insulated conductor. The charge can remain for ... figure shows EPROM memory cell consisting of a single NMOS filed effect transistor. 

Show More

1.2k views 2 answers







Operating frequency of power MOSFET is higher than that of power BJT. Justify the statement.
Last Answer : Power MOSFET have high turning on and turning off capability high switching speed of MOSFET is due to the high rate of change of drain voltage. The switching losses of power MOSFET ... lower frequency. Hence, operating frequency of power MOSFET is higher than that of power BJT.

Show More

983 views 1 answer







Justify the statement. Antiparallel diode is connected across MOSFET.
Last Answer : In MOSFET current is flow from drain to source but when the load is inductive the current may flow in opposite direction. To avoid the opposite flow of current and to protect MOSFET the antiparallel diode is connected across MOSFET.

Show More

160 views 1 answer







IGBT uses IGBT uses
Last Answer : Applications of IGBT: 1. The insulated gate bipolar transistor (IGBT) is used Ac and DC motor drivers. 2. The IGBT is used in unregulated power supply (UPS) system. 3. The IGBT is used to ... an isolated-gate FET for the control input and a bipolar power transistor as a switch in a single device.

Show More

25 views 1 answer







State weather the following statement is true or false for Stream Control Transmission Protocol (SCTP). 1). SCTP uses only few known ports in the TCP space. 2).SCTP is a new transport protocol at the same layer as TCP and ... , 3. false C. 1. false, 2. false, 3. false D. 1.false, 2. true, 3. true
Last Answer : D. 1.false, 2. true, 3. true

Show More

16 views 1 answer







Justify. Power MOSFET is operated at high enough gate source voltage to minimize the conduction losses. 
Last Answer : MOSFET is metal oxide field effect transistor. MOSFET is a voltage controlled device. MOSFET is majority carrier device. MOSFET are of two one is n-channel MOSFET and p-channel MOSFET. Gate, ... . Hence, power MOSFET is operated at high enough gate-source voltage to minimize the conduction losses.

Show More

842 views 1 answer







For IGBT, which of the following statement is true?  (a) Switching speed of IGBT is more than bipolar transistor (b) IGBT is a current-controlled device (c) On-state collector- ... transistor (d) It combines voltage control features of MOSFET gate and high power capability of bipolar transistor
Last Answer : For IGBT, which of the following statement is true?  (a) Switching speed of IGBT is more than bipolar transistor (b) IGBT is a current-controlled device (c) On-state collector- ... transistor (d) It combines voltage control features of MOSFET gate and high power capability of bipolar transistor

Show More

298 views 1 answer







The transnational structure is: a) dominated by hierarchy. b) not dominated by hierarchy c) designed for vertically integrated international firm. d) appropriate for export firms.
Last Answer : appropriate for export firms.

Show More

3 views 1 answer







Transmission control protocol ___________ a. is a connection-oriented protocol b. uses a three way handshake to establish a connection c. receives data from application as a single stream d. all of the mentioned
Last Answer : d. all of the mentioned

Show More

33 views 1 answer







Transmission control protocol ___________ a. is a connection-oriented protocol b. uses a three way handshake to establish a connection c. receives data from application as a single stream d. all of the mentioned
Last Answer : d. all of the mentioned

Show More

473 views 1 answer







Transmission control protocol is a) connection oriented protocol b) uses a three way handshake to establish a connection c) recievs data from application as a single stream d) all of the mentioned
Last Answer : d) all of the mentioned

Show More

16 views 1 answer







Binary symmetric channel uses (A) Half duplex protocol (B) Full duplex protocol (C) Bit oriented protocol (D) None of the above
Last Answer : (A) Half duplex protocol

Show More

26 views 1 answer







One of the major disadvantages of the Matrix form of organization structure is that– (A) it does not pinpoint product profit responsibility (B) it is not oriented towards results (C) there is possibility of disunity of command (D) it generates rivalry between line and staff members
Last Answer : Answer: there is possibility of disunity of command

Show More

3 views 1 answer







What is a requirement for setting pricing objectives? A)The objectives should be short-term oriented. B)There should be only one pricing objective. C)An evaluation of competitors' prices should be made. D)The cost structure should be identified. E)The objectives should be explicitly stated.
Last Answer : E)The objectives should be explicitly stated.

Show More

6 views 1 answer







Superficially the term object-oriented , means that, we organize software as a (A) collection of continuous objects that incorporates both data structure and behaviour. (B) collection of ... and behaviour. (D) collection of objects that incorporates both discrete data structure and behaviour.
Last Answer : (C) collection of discrete objects that incorporates both data structure and behaviour.

Show More

31 views 1 answer







The database in which records are organised in a tree-like structure is (1) Network database (2) Hierarchical database (3) Relational database (4) Object-oriented database
Last Answer : Hierarchical database

Show More

106 views 1 answer







IGBT is a voltage controlled device. Why?
Last Answer : Because the controlling parameter is gate-emitter voltage.

Show More

3 views 1 answer







Why IGBT is very popular nowadays?
Last Answer : a. Lower hEAT requirements b. Lower switching losses c. Smaller snubber circuit requirements

Show More

2 views 1 answer







What are the various parameters we have to consider, while selecting IGBT?
Last Answer : In IGBT datasheet, we have to focus on following parameters Collector to emitter voltage VCESCollector Current ICCollector Dissipation PCJunction Temperature Tj

Show More

7 views 1 answer







For High frequency applications will you prefer MOSFET or IGBT? Why?
Last Answer : For High frequency applications, MOSFET is the right choice of the device.Because MOSFET has low switching losses compare to that of IGBT.General rule of thumb is for low-frequency applications ... For high frequency applications having frequency range of more than 200kHz, we have to use MOSFET

Show More

4 views 1 answer







For High voltage applications will you prefer MOSFET or IGBT?
Last Answer : For High voltage applications we have to use IGBT. Because MOSFETs are low voltage devices. ie, Their voltage rating is lesser than IGBT. General rule is MOSFETs are suitable for applications ... voltage less than 250V. The IGBTs are suitable for applications which has breakdown voltage upto 1000V.

Show More

3 views 1 answer







A modern power semiconductor device IGBT is combines the characteristics of a) BJT and MOSFET b) FCT and GTO c) SCR and MOSFET d) SCR and BJT
Last Answer : Ans: BJT and MOSFET

Show More

6 views 1 answer







IGBT V-I characteristics

Show More

18 views 0 answers







IGBT working principle

Show More

22 views 0 answers







IGBT Construction

Show More

30 views 0 answers







What is IGBT (Insulated Gate Bipolar Transistor) ?
Last Answer : As compare to BJT and MOSFET, IGBT have very low on state voltage drop. IGBT require low driving power. IGBT have wide SOA (Safe Operating Area). The current conduction capability of ... very useful for improving dynamic performance and efficiency. IGBT also very good in reducing audible noise.

Show More

365 views 2 answers







The requirement of the gate drive circuits for power MOSFET and IGBT is (a) high source capability (b) high sink capability (c) both (a) and (b) (d) high voltage capability

Show More

68 views 0 answers







An IGBT has three terminals called   (a) Collector, Emitter and Base (b) Drain, Source and Base (c) Drain, Source and Gate (d) Collector, Emitter and Gate  

Show More

126 views 0 answers







Consider the following statements in respect of important features of IGBT.  P. It has high input impedance gate as that of a MOSFET  Q. It has low ON state voltage drop as that of a BJT  R. Turn-off time is significantly less ... are correct?  A) P and Q B) P and R C) Q and R D) P, Q and R

Show More

97 views 0 answers







The switching time (in µS) of IGBT is in the range of  A) 20 B) 10 C) 2 D) 0.5

Show More

65 views 0 answers








Last Answer : IGBT is used as High frequency switching device.

Show More

73 views 1 answer








Last Answer : Igbt alone cant convert dc to ac. igbt half bridge or full bridge or three phase topology could be used to convert dc to ac. also igbt gates should be driven by microcontroller or pwm/spwm gate driving signals ... e4(-) and g4 c2e1 and c4e3 pins are AC output pins. its name is igbt inverter.

Show More

185 views 1 answer







Is one of the reasons the terrorist group Alleged uses to justify committing acts of terrorism against the US?
Last Answer : Need answer

Show More

0 views 1 answer






Show More⇦ PreviousNext ⇨