Describe with neat sketch the constructional details of IGBT.
Last Answer : Construction: Insulated gate bipolar transistor or IGBT, is a solid state devices primarily used as an electronic switch which, as it was developed, came to combine high efficiency and fast ... layer and p+ emitter constitute a BJT with a wide base region and hence small current gain.
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248 views
1 answer
asked
May 21, 2020
by
anonymous

Draw construction of IGBT.
Last Answer : construction of IGBT
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362 views
1 answer
asked
Oct 13, 2019
by
anonymous

Which phenomenon is present in thyristors but absent in BJT, MOSFET and IGBT ? (A) forward conduction (B) latching (C) forward blocking (D) reverse breakdown
Last Answer : Which phenomenon is present in thyristors but absent in BJT, MOSFET and IGBT ? (A) forward conduction (B) latching (C) forward blocking (D) reverse breakdown
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3.2k views
1 answer
asked
Apr 28, 2018
by
anonymous

Compare BJT, MOSFET and IGBT .
Last Answer : BJT MOSFET IGBT BJT is a current controlled device. MOSFET is a voltage controlled device. IGBT is a voltage controlled device. The input impedance of BJT is low. ... is minority carrier device. MOSFET is majority carrier device. IGBT is minority carrier device.
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448 views
1 answer
asked
Nov 10, 2017
by
anonymous
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Last Answer : Because it has a higher switching frequency and heat tolerance.
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143 views
1 answer
asked
Sep 15, 2017
by
anonymous

Also, highlight the problem faced during parallel operation.
Last Answer : Parallel operation of IGBT: Parallel operation of IGBT is done for obtaining high current rating. Paralleling of IGBT reduces conduction losses and thermal stress. IGBT combines the qualities of ... . IGBTs must share losses equally otherwise IGBT may get failure due to thermal differences.
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223 views
1 answer
asked
Sep 15, 2017
by
anonymous

Last Answer : No, IGBT is not the current controlled device. IGBT is a voltage controlled device. IGBT have combine qualities of MOSFET and BJT. The high switching speed of MOSFET and low conduction losses of BJT. Also, IGBT which stands for Insulated Gate Bipolar Transistor have high input impedance.
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216 views
1 answer
asked
Sep 13, 2017
by
anonymous

Last Answer : IGBT is a bipolar device.
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322 views
1 answer
asked
Sep 13, 2017
by
anonymous

Last Answer : IGBT or Insulated Gate Bi-polar Transistors are typically semiconductor devices aka. controlled switches, which find their applications in Power Electronics circuits such as Inverters, and electrical ... ( buy implementing suitable Pulse Width Modulation scheme ) * Lower cost
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95 views
1 answer
asked
Sep 13, 2017
by
anonymous

Last Answer : IGBT is a bipolar device because current is carried by both holes and electrons.
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136 views
1 answer
asked
Sep 13, 2017
by
anonymous

Last Answer : ON state losses of IGBT is less as compared to MOSFET and BJT.
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141 views
1 answer
asked
Sep 13, 2017
by
anonymous

What is the permissible flux density in case of cold rolled grained oriented steel?
Last Answer : The permissible flux density in case of cold rolled grained oriented steel is 1.7 Wb/m2.
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136 views
1 answer
asked
Mar 19, 2018
by
anonymous

Give the applications of IGBT
Last Answer : 1) AC and DC motor drives 2) SMPS 3) Inverters 4) Choppers 5) Solid-state Relays 6) solid-state Contactors
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69 views
1 answer
asked
Oct 13, 2019
by
anonymous

The number of terminals present in IGBT is A) 2 B) 3 C) 4 D) 5
Last Answer : The number of terminals present in IGBT is 3
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83 views
1 answer
asked
Jun 18, 2018
by
anonymous

Last Answer : Yes IGBT is costlier than BJT and MOSFET.
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2.6k views
1 answer
asked
Sep 29, 2017
by
anonymous
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Describe IS – 95 forward link channel structure.
Last Answer : The IS-95 forward Channel structure consists of four types of logical Channels - pilot Channel, synchronization Channel, paging Channel, and forward traffic Channels. Each forward carrier Channel contains one ... . This code is known as the channel identifier. This code is different for each user
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90 views
1 answer
asked
Aug 6, 2019
by
anonymous

Last Answer : The torque produced in induction type relay (shaded pole structure) is inversely proportional to the square of the current.
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829 views
1 answer
asked
Mar 20, 2018
by
anonymous

EPROM internal structure
Last Answer : EPROM (Erasable Programmable ROM): EPROM stands for Erasable Programmable ROM.Data is stored in EPROM memory cell as an electrostatic charge on highly insulated conductor. The charge can remain for ... figure shows EPROM memory cell consisting of a single NMOS filed effect transistor.
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1.2k views
2 answers
asked
Aug 3, 2017
by
anonymous

Operating frequency of power MOSFET is higher than that of power BJT. Justify the statement.
Last Answer : Power MOSFET have high turning on and turning off capability high switching speed of MOSFET is due to the high rate of change of drain voltage. The switching losses of power MOSFET ... lower frequency. Hence, operating frequency of power MOSFET is higher than that of power BJT.
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983 views
1 answer
asked
Feb 3, 2018
by
anonymous

Justify the statement. Antiparallel diode is connected across MOSFET.
Last Answer : In MOSFET current is flow from drain to source but when the load is inductive the current may flow in opposite direction. To avoid the opposite flow of current and to protect MOSFET the antiparallel diode is connected across MOSFET.
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160 views
1 answer
asked
Feb 2, 2018
by
anonymous

IGBT uses IGBT uses
Last Answer : Applications of IGBT: 1. The insulated gate bipolar transistor (IGBT) is used Ac and DC motor drivers. 2. The IGBT is used in unregulated power supply (UPS) system. 3. The IGBT is used to ... an isolated-gate FET for the control input and a bipolar power transistor as a switch in a single device.
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25 views
1 answer
asked
Jun 11, 2020
by
anonymous

State weather the following statement is true or false for Stream Control Transmission Protocol (SCTP). 1). SCTP uses only few known ports in the TCP space. 2).SCTP is a new transport protocol at the same layer as TCP and ... , 3. false C. 1. false, 2. false, 3. false D. 1.false, 2. true, 3. true
Last Answer : D. 1.false, 2. true, 3. true
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16 views
1 answer

Justify. Power MOSFET is operated at high enough gate source voltage to minimize the conduction losses.
Last Answer : MOSFET is metal oxide field effect transistor. MOSFET is a voltage controlled device. MOSFET is majority carrier device. MOSFET are of two one is n-channel MOSFET and p-channel MOSFET. Gate, ... . Hence, power MOSFET is operated at high enough gate-source voltage to minimize the conduction losses.
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842 views
1 answer
asked
Dec 7, 2017
by
anonymous
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For IGBT, which of the following statement is true? (a) Switching speed of IGBT is more than bipolar transistor (b) IGBT is a current-controlled device (c) On-state collector- ... transistor (d) It combines voltage control features of MOSFET gate and high power capability of bipolar transistor
Last Answer : For IGBT, which of the following statement is true? (a) Switching speed of IGBT is more than bipolar transistor (b) IGBT is a current-controlled device (c) On-state collector- ... transistor (d) It combines voltage control features of MOSFET gate and high power capability of bipolar transistor
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298 views
1 answer
asked
May 15, 2018
by
anonymous

The transnational structure is: a) dominated by hierarchy. b) not dominated by hierarchy c) designed for vertically integrated international firm. d) appropriate for export firms.
Last Answer : appropriate for export firms.
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3 views
1 answer

Transmission control protocol ___________ a. is a connection-oriented protocol b. uses a three way handshake to establish a connection c. receives data from application as a single stream d. all of the mentioned
Last Answer : d. all of the mentioned
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33 views
1 answer

Transmission control protocol ___________ a. is a connection-oriented protocol b. uses a three way handshake to establish a connection c. receives data from application as a single stream d. all of the mentioned
Last Answer : d. all of the mentioned
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473 views
1 answer

Transmission control protocol is a) connection oriented protocol b) uses a three way handshake to establish a connection c) recievs data from application as a single stream d) all of the mentioned
Last Answer : d) all of the mentioned
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16 views
1 answer

Binary symmetric channel uses (A) Half duplex protocol (B) Full duplex protocol (C) Bit oriented protocol (D) None of the above
Last Answer : (A) Half duplex protocol
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26 views
1 answer
asked
Feb 10, 2021
by
anonymous

One of the major disadvantages of the Matrix form of organization structure is that– (A) it does not pinpoint product profit responsibility (B) it is not oriented towards results (C) there is possibility of disunity of command (D) it generates rivalry between line and staff members
Last Answer : Answer: there is possibility of disunity of command
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3 views
1 answer

What is a requirement for setting pricing objectives? A)The objectives should be short-term oriented. B)There should be only one pricing objective. C)An evaluation of competitors' prices should be made. D)The cost structure should be identified. E)The objectives should be explicitly stated.
Last Answer : E)The objectives should be explicitly stated.
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6 views
1 answer
asked
Jul 30, 2021
by
anonymous

Superficially the term object-oriented , means that, we organize software as a (A) collection of continuous objects that incorporates both data structure and behaviour. (B) collection of ... and behaviour. (D) collection of objects that incorporates both discrete data structure and behaviour.
Last Answer : (C) collection of discrete objects that incorporates both data structure and behaviour.
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31 views
1 answer
asked
Feb 9, 2021
by
anonymous
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The database in which records are organised in a tree-like structure is (1) Network database (2) Hierarchical database (3) Relational database (4) Object-oriented database
Last Answer : Hierarchical database
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106 views
1 answer
asked
Jan 31, 2021
by
anonymous

IGBT is a voltage controlled device. Why?
Last Answer : Because the controlling parameter is gate-emitter voltage.
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3 views
1 answer

Why IGBT is very popular nowadays?
Last Answer : a. Lower hEAT requirements b. Lower switching losses c. Smaller snubber circuit requirements
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2 views
1 answer

What are the various parameters we have to consider, while selecting IGBT?
Last Answer : In IGBT datasheet, we have to focus on following parameters Collector to emitter voltage VCESCollector Current ICCollector Dissipation PCJunction Temperature Tj
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7 views
1 answer

For High frequency applications will you prefer MOSFET or IGBT? Why?
Last Answer : For High frequency applications, MOSFET is the right choice of the device.Because MOSFET has low switching losses compare to that of IGBT.General rule of thumb is for low-frequency applications ... For high frequency applications having frequency range of more than 200kHz, we have to use MOSFET
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4 views
1 answer

For High voltage applications will you prefer MOSFET or IGBT?
Last Answer : For High voltage applications we have to use IGBT. Because MOSFETs are low voltage devices. ie, Their voltage rating is lesser than IGBT. General rule is MOSFETs are suitable for applications ... voltage less than 250V. The IGBTs are suitable for applications which has breakdown voltage upto 1000V.
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3 views
1 answer

A modern power semiconductor device IGBT is combines the characteristics of a) BJT and MOSFET b) FCT and GTO c) SCR and MOSFET d) SCR and BJT
Last Answer : Ans: BJT and MOSFET
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6 views
1 answer

IGBT V-I characteristics
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18 views
0 answers
asked
Jun 11, 2020
by
anonymous

IGBT working principle
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22 views
0 answers
asked
Jun 11, 2020
by
anonymous

IGBT Construction
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30 views
0 answers
asked
Jun 11, 2020
by
anonymous

What is IGBT (Insulated Gate Bipolar Transistor) ?
Last Answer : As compare to BJT and MOSFET, IGBT have very low on state voltage drop. IGBT require low driving power. IGBT have wide SOA (Safe Operating Area). The current conduction capability of ... very useful for improving dynamic performance and efficiency. IGBT also very good in reducing audible noise.
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365 views
2 answers
asked
May 18, 2018
by
anonymous
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The requirement of the gate drive circuits for power MOSFET and IGBT is (a) high source capability (b) high sink capability (c) both (a) and (b) (d) high voltage capability
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68 views
0 answers
asked
Apr 14, 2018
by
anonymous

An IGBT has three terminals called (a) Collector, Emitter and Base (b) Drain, Source and Base (c) Drain, Source and Gate (d) Collector, Emitter and Gate
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126 views
0 answers
asked
Apr 10, 2018
by
anonymous

Consider the following statements in respect of important features of IGBT. P. It has high input impedance gate as that of a MOSFET Q. It has low ON state voltage drop as that of a BJT R. Turn-off time is significantly less ... are correct? A) P and Q B) P and R C) Q and R D) P, Q and R
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97 views
0 answers
asked
Apr 9, 2018
by
anonymous

The switching time (in µS) of IGBT is in the range of A) 20 B) 10 C) 2 D) 0.5
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65 views
0 answers
asked
Apr 9, 2018
by
anonymous

Last Answer : IGBT is used as High frequency switching device.
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73 views
1 answer
asked
Mar 29, 2018
by
anonymous

Last Answer : Igbt alone cant convert dc to ac. igbt half bridge or full bridge or three phase topology could be used to convert dc to ac. also igbt gates should be driven by microcontroller or pwm/spwm gate driving signals ... e4(-) and g4 c2e1 and c4e3 pins are AC output pins. its name is igbt inverter.
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185 views
1 answer
asked
Feb 24, 2018
by
Amit Sharma

Is one of the reasons the terrorist group Alleged uses to justify committing acts of terrorism against the US?
Last Answer : Need answer
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0 views
1 answer
