Description : What kind of battery panels are used in some advance satellites? A. Gallium Arsenide solar panel B. Germanium based panels C. Silicon based panels D. Gallium Phosphate solar panel
Last Answer : A. Gallium Arsenide solar panel
Description : It is the made from semiconductor material such as aluminum-galium-arsenide or gallium-arsenide-phosphide. A. APD B. Injection laser diode C. Light emitting diode D. Positive-intrinsic-negative
Last Answer : C. Light emitting diode
Description : Between silicon and gallium arsenide, which has the greatest index of refraction? ∙ A. Gallium arsenide ∙ B. Neither of silicon nor gallium arsenide ∙ C. Silicon ∙ D. They are equal
Last Answer : Gallium arsenide
Description : Mendeleev proposed the existence of an unknown element that he called eka-aluminum. The element is now called: w) magnesium x) silicon y) gallium z) germanium
Last Answer : ANSWER: C -- GALLIUM
Description : Silicon diodes designed for a specific reverse breakdown voltage, become useful as an electronic power supply voltage regulator, called _____________. A. tunnel diodes B. hot-carrier diodes C. compensating diodes D. Zener diodes
Last Answer : Answer: D
Description : The domain in a gallium-arsenide semiconductor has what type of electrical field when compared to the other regions across the body of a semiconductor?
Last Answer : A field of much greater intensity.
Description : The point on the current curve of a gallium-arsenide semiconductor at which it begins to exhibit negative resistance is called what?
Last Answer : Threshold.
Description : What happens to the electrons of a gallium-arsenide semiconductor when they move from the normal low-energy conduction band to the high-energy conduction band?
Last Answer : The electrons become immobile.
Description : The width of depletion layer of a P-N junction – (1) decreases with light doping (2) increases with heavy doping (3) is independent of applied voltage (4) is increased under reverse bias
Last Answer : (4) is increased under reverse bias Explanation: The total width of the depletion region is a function of applied reverse-bias and impurity concentration. Forward bias decreases the depletion region width whilst reverse bias increases it.
Description : The width of depletion layer of a P-N junction (1) decreases with light doping (2) increases with heavy doping (3) is independent of applied voltage (4) is increased under reverse bias
Last Answer : is increased under reverse bias
Description : ‘Germanium diode knee voltage is lower than silicon diode knee voltage.' Justify.
Last Answer : Justification: The band gap between conduction and valence band for Germanium (0.66eV) is less as compared to Silicon (1.11eV).Hence less energy is required to start conduction in Germanium diode.
Description : Which of the following elements replaced eka-Aluminium in Mendeleev's Periodic Table? (1) Scandium (2) Gallium (3) Titanium (4) Germanium
Last Answer : (2) Gallium
Description : The purpose of a heat sink, as frequently used with transistors, is to ____________. A. prevent excessive temperature rise B. compensate for excessive doping C. increase the reverse current D. decrease the forward current
Last Answer : Answer: A
Description : The illustrated circuit is a _____________. EL-0024 A. megohm meter B. Gauss meter C. wheatstone bridge D. germanium diode tester
Last Answer : Answer: C
Description : Which of the listed pairs of materials make the best insulators? A. dry air and a vacuum B. tin and lead C. doped silicon and germanium D. paper and oil
Description : Which of the listed pairs of materials make the best insulators? A. copper and aluminum B. glass and mica C. dry air and a vacuum D. doped silicon and germanium
Last Answer : Answer: B
Description : In the illustration, the component VR2 on the A1 AMPLIFIER MODULE is _________. EL-0060 A. a zener diode to regulate the +9 volt power supply from common B. a variable resistor diode to control the output to terminal ... 2 at 9.1 volts DC D. a tunnel diode with a breakdown voltage of 6.6 Volts DC
Description : In the illustration, the component VR1 on the A1 AMPLIFIER MODULE is _________. EL-0060 A. a zener diode to regulate the +9 volt power supply from common B. a variable resistor diode to control the output to ... terminal 9 at 6.6 volts DC D. a tunnel diode with a breakdown voltage of 6.6 Volts DC
Description : In the illustration, the component VR1 on the A1A1 PCB is _________. EL-0060 A. a zener diode to regulate the +9 volt power supply B. a variable resistor diode to control the output to terminal 9 that controls ... terminal 9 at 6.6 volts DC D. a tunnel diode with a breakdown voltage of 6.6 Volts DC
Description : An integrated circuit is A) A complicated circuit B) An integrating device C) Much costlier than a single transistor D) Fabricated on a tiny silicon chip
Last Answer : Answer : D
Description : An integrated circuit is a. A complicated circuit b. An integrating device c. Much costlier than a single transistor d. Fabricated on a tiny silicon chip
Last Answer : Fabricated on a tiny silicon chip
Last Answer : d. Fabricated on a tiny silicon chip
Description : Figure 'C' shown in the illustration represents a _________. EL-0078 A. silicon controlled rectifier B. light emitting diode C. photosensitive diode D. Zener diode
Description : Figure 'D' shown in the illustration represents a _________. EL-0067 A. silicon controlled rectifier B. light emitting diode C. photosensitive diode D. Zener diode
Description : Which of the following statements represents an application of a silicon controlled rectifier? A. To provide DC power for a main propulsion motor. B. For use as a voltage reference diode. C. For sensing flame in an automated burner. D. To eliminate power supply hum.
Description : Which of the following metals is in a liquid state at normal room temperature? (a) Sodium (b) Radium (c) Gallium (d) Silicon
Last Answer : Ans:(c)
Description : How depletion region get thin by increasing doping level in a zener diode?
Last Answer : Doping is a process of mixing sum impurity in a iinsulator andthen that acts like conductor...The materials which are said tobehave like this are called semi conductor . it is very often toknow ... theDepletion region remains there but it never ends....i-e depletionregion can not be removed finally
Description : What is the doping level of an avalanche effect diode when compared to the doping level of a Zener-effect diode?
Last Answer : The doping level of an avalanche effect diode is lower.
Description : Silicon crystal can be converted to p-type semi-conductor by doping with (A) Phosphorous (B) Nitrogen (C) Carbon (D) Boron
Last Answer : Option D
Description : Both LEDs and ILDs operate correctly with ∙ A. forward bias ∙ B. reverse bias ∙ C. neither forward nor reverse bias ∙ D. either forward or reverse bias
Last Answer : A. forward bias
Description : Both LEDs and ILDs operate correctly with ∙ a. Forward bias ∙ b. Reverse bias ∙ c. Neither A or B ∙ d. Either A or B
Last Answer : a. Forward bias
Description : Why is silicon and germanium used in semiconductors.pdf?
Last Answer : Feel Free to Answer
Description : Name two elements that find wide application in transistor industry – (1) Silicon and Germanium (2) Carbon and Platinum (3) Iridium and Germanium (4) Tungsten and Platinum
Last Answer : (1) Silicon and Germanium Explanation: A transistor is a semiconductor device used to amplify and switch electronic signals and electrical power. Semiconductor material (date first used): the metalloids ... -germanium (1989), the allotrope of carbon graphene (research ongoing since 2004), etc.
Description : Which one of the following is an ohmic conductor? (1) Germanium (2) Silicon (3) Carbon (4) Silver
Last Answer : (4) Silver Explanation: Ohmic conductors are conductors that obey Ohm's law, that is Voltage/Current ratio is constant; in other words, the equation Resistance = Voltage/Current is obeyed. ... s resistance does not change with varying current. Metallic conductors such as silver are Ohmic conductors.
Description : why silicon type transistor are more often used than germanium?
Last Answer : because silicon has smaller cutoff current Icbo, small variations in Icbo due to variation in temperature as compared to those in case of germanium.
Description : Why cannot thousands of compounds of Boron or silicon or germanium not possible?
Last Answer : Even though B-B, Si-Si, Ge-Ge bonds exits, these compounds are unstable and very reactive and do not last long.
Description : Give reason: Silicon is used widely even through Germanium is a better semiconductor material.
Last Answer : Silicon is the second most abundantly available material and it can be used at higher temperature. Hence it widely used than Germanium.
Description : Which of the following is not an example of elemental solid dielectric? a) Diamond b) Sulphur c) Silicon d) Germanium
Last Answer : c) Silicon
Description : Metalloids (A) Are good conductor of heat & electricity (B) Act as electron donors with metals & as electron acceptor with non metals (C) Are not necessarily solids at room temperature ... & non-metallic properties to some extent and are exemplified by elements like germanium, silicon & boron
Last Answer : D) Are compounds that exhibit both metallic & non-metallic properties to some extent and are exemplified by elements like germanium, silicon & boron
Description : When a sample of germanium and silicon having same impurity density are kept at room temperature then Resistivity of silicon will be higher than that of germanium, Why?
Last Answer : Ans-The answer is simple. Consider the PN diode for Ge 0.3eV is the breakdown voltage and in the case of Si its 0.7eV since the impurities are added in the same amount the bond due to the other atoms of the Si makes it resistive compared to the Ge.. thats all!
Description : Semiconductor germanium and silicon are (a) Pentavalent (b) trivalent (c) divalent (d) tetravalent
Last Answer : (d) tetravalent
Description : Pure semiconductors silicon and germanium are a) Extrinsic b) Intrinsic c) Insulator d) Diodes
Last Answer : b) Intrinsic
Description : Name two elements that find wide application in transistor industry (1) Silicon and Germanium (2) Carbon and Platinum (3) Iridium and Germanium (4) Tungsten and Platinum
Last Answer : Silicon and Germanium
Last Answer : Silver
Description : The Maximum spectral response of the germanium and silicon is in the (A) infrared region (B) ultraviolet region (C) visible region (D) x-ray region
Last Answer : The Maximum spectral response of the germanium and silicon is in the ultraviolet region
Description : Which of the following elements are used as dopants in silicon or germanium semiconductors? A) Antimony B) Phosphorus C) Arsenic D) All the above
Last Answer : Which of the following elements are used as dopants in silicon or germanium semiconductors? A) Antimony B) Phosphorus C) Arsenic D) All the above
Description : Which one of the following elements is metalloid? (1) Si (2) Pb (3) Ge (4) C
Last Answer : (3) Ge Explanation: A metalloid is a chemical element with properties in between metals and nonmetals. Germanium (Ge) is a chemical element. It is a lustrous, hard, grayish-white metalloid in the carbon group.
Description : Why silicon is preferred over Ge?
Last Answer : 1) Silicon is plenty available compared to Ge. 2) Extraction process of Si is easy and less expensive. 3) Si has more thermal stability as compared to Ge. 4) Si has more breakdown voltage as compared to Ge.