The width of depletion layer of a P-N junction (1) decreases with light doping (2) increases with heavy doping (3) is independent of applied voltage (4) is increased under reverse bias

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 is increased under reverse bias

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Description : The width of depletion layer of a P-N junction – (1) decreases with light doping (2) increases with heavy doping (3) is independent of applied voltage (4) is increased under reverse bias

Last Answer : (4) is increased under reverse bias Explanation: The total width of the depletion region is a function of applied reverse-bias and impurity concentration. Forward bias decreases the depletion region width whilst reverse bias increases it.

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Last Answer : i)P-N junction diode: It is a semiconductor device in which half of its region is P-type and other half is N-type.  ii) Depletion layer: The region where free electrons and free holes are absent ... and negative terminal is connected to p-side of p-n junction diode, it is said to be reverse bias.

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Last Answer : (c) Suddenly increases

Last Answer : With forward bias to a pn junction , the width of depletion layer Decreases.

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Last Answer : (a) during the manufacturing process

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Last Answer : When reverse bias is applied to a junction diode, it increases the potential barrier 

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Last Answer : A reverse bias pn junction has Almost no current.

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