C and Si both have same lattice structure, having 4 bonding electrons in each. However, C is insulator where as Si is intrinsic semiconductor. This is because (1) The four bonding electrons in the case of C lie in the third orbit, whereas for Si they lie in the fourth orbit (2) In case of C the valance band is not completely filled at absolute zero temperature (3) In case of C the conduction band is partly filled even at absolute zero temperature (4) The four bonding electrons in the case of C lie in the second orbit, whereas in the case of Si they lie in the third

C and Si both have same lattice structure, having 4 bonding electrons in each. However, C is insulator
where as Si is intrinsic semiconductor. This is because
(1) The four bonding electrons in the case of C lie in the third orbit, whereas for Si they lie in the
fourth orbit
(2) In case of C the valance band is not completely filled at absolute zero temperature
(3) In case of C the conduction band is partly filled even at absolute zero temperature
(4) The four bonding electrons in the case of C lie in the second orbit, whereas in the case of Si they
lie in the third
by

1 Answer

Answer :

(4) The four bonding electrons in the case of C lie in the second orbit, whereas in the case of Si they
lie in the third
by

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