Description : Dry etching refers to removal of material, typically a masked pattern of semiconductor material, by exposing material to a bombardment of ions which contain (a) Plasma of nitrogen, chlorine and ... of nitrogen, phosphorous and boron trichloride (d) Plasma of nitrogen, chlorine and boron trioxide
Last Answer : Plasma of nitrogen, chlorine and boron trichloride. Other gases include argon and helium.