The material used for ‘doping’ to prepare N - type semiconductor is

The material used for ‘doping’ to prepare N - type semiconductor is
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Answer :

The material used for ‘doping’ to prepare N - type semiconductor is Arsenic

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Related questions

As the doping to a pure semiconductor increases, the bulk resistance of the semiconductor ………..

Last Answer : As the doping to a pure semiconductor increases, the bulk resistance of the semiconductor Decreases.

Which of the following properties distinguish a material as conductor, insulator and semiconductor? a) Free electron charges b) Fermi level after doping c) Energy band gap d) Electron density

Description : Which of the following properties distinguish a material as conductor, insulator and semiconductor? a) Free electron charges b) Fermi level after doping c) Energy band gap d) Electron density

Last Answer : c) Energy band gap

In an n-type semiconductor, as the donor concentration ND increases, the Fermi level EF:

Description : In an n-type semiconductor, as the donor concentration ND increases, the Fermi level EF: (1) Remains unaltered (2) Moves towards the conduction band (3) Move towards the center of forbidden energy gap (4) May or may not move depending on temperature 

Last Answer : In an n-type semiconductor, as the donor concentration ND increases, the Fermi level EF: Moves towards the conduction band

An n-type semiconductor is ………

Last Answer : An n-type semiconductor is Electrically neutral.

Addition of suitable impurities into semiconductor, is called – (1) Doping (2) Mixing (3) Forming (4) Diluting

Description : Addition of suitable impurities into semiconductor, is called – (1) Doping (2) Mixing (3) Forming (4) Diluting

Last Answer : (1) Doping Explanation: In semiconductor production, doping refers to the introduction of impurities into an extremely pure intrinsic semiconductor for the purpose of modulating its electrical properties. ... type of semiconductor and the properties that it needs to have for its intended purpose.

The process of addition of impurity in pure semiconductor is : a) Doping b) Radiating c) Mixing d) Insulating

Description : The process of addition of impurity in pure semiconductor is : a) Doping b) Radiating c) Mixing d) Insulating

Last Answer : d) Insulating

Addition of suitable impurities into semiconductor, is called (1) Doping (2) Mixing (3) Forming (4) Diluting

Description : Addition of suitable impurities into semiconductor, is called (1) Doping (2) Mixing (3) Forming (4) Diluting

Last Answer : Doping

Impurity atoms to be added to pure silicon in order to make a p-type semiconductor belongs to

Description : Impurity atoms to be added to pure silicon in order to make a p-type semiconductor belongs to (a) Phosphorous (b) Boron (c) Antimony (d) Aluminium 

Last Answer : Boron  , a  group  three  element.

In a single crystal of an intrinsic semiconductor, the number of free carriers at the Fermi level at room

Description : In a single crystal of an intrinsic semiconductor, the number of free carriers at the Fermi level at room temperature is: A) Half the total number of electrons in the crystal B) Zero C) Half the number of atoms in the crystal D) Half the number of free electrons in the crystal

Last Answer : In a single crystal of an intrinsic semiconductor, the number of free carriers at the Fermi level at room temperature is: Zero 

The advantage of a semiconductor strain gauge cover the wire round strain gauge is that

Description : The advantage of a semiconductor strain gauge cover the wire round strain gauge is that

Last Answer : The advantage of a semiconductor strain gauge cover the wire round strain gauge is that it is more sensitive

The semiconductor used for LEDs emitting in the visible range is

Description : The semiconductor used for LEDs emitting in the visible range is  (a) GaAs (b) GaAlAs (c) GalnAs (d) GaAsP

Last Answer : The semiconductor used for LEDs emitting in the visible range is GaAsP

The polar bonds existing in III-V compound semiconductor, may be considered as equivalent to

Description : The polar bonds existing in III-V compound semiconductor, may be considered as equivalent to  (a) 1 ionic bond and 3 covalent bonds (b) 1 ionic bond and 4 covalent bonds (c) 2 ionic bonds and 2 covalent bonds (d) 2 ionic bonds and 4 covalent bonds

Last Answer : The polar bonds existing in III-V compound semiconductor, may be considered as equivalent to 1 ionic bond and 3 covalent bonds

While comparing doped semiconductor vs. un-doped semiconductor, which of the following

Description : While comparing doped semiconductor vs. un-doped semiconductor, which of the following statements is NOT true ? (A) Doped semiconductor has smaller band-gap compared to un-doped semiconductor (B) ... to un-doped semiconductor (D) Doped as well as un-doped semiconductor have equal bandwidth

Last Answer : While comparing doped semiconductor vs. un-doped semiconductor, which of the following statements is NOT true ? (A) Doped semiconductor has smaller band-gap compared to un-doped semiconductor (B) ... to un-doped semiconductor (D) Doped as well as un-doped semiconductor have equal bandwidth

To increase mobility of electron in a given piece of semiconductor

Description : To increase mobility of electron in a given piece of semiconductor (A) Increase overall size of the semiconductor (B) Increase length (C) Increase width (D) Small increase in temperature above room temperature value

Last Answer : To increase mobility of electron in a given piece of semiconductor Small increase in temperature above room temperature value

At absolute temperature, an intrinsic semiconductor has ……….

Last Answer : At absolute temperature, an intrinsic semiconductor has No holes or free electrons.

At room temperature, an intrinsic semiconductor has ……….

Last Answer : At room temperature, an intrinsic semiconductor has A few free electrons and holes.

In an intrinsic semiconductor, the number of free electrons ………

Last Answer :  In an intrinsic semiconductor, the number of free electrons Equals the number of holes.

When the temperature of an extrinsic semiconductor is increased, the pronounced effect is on……

Last Answer : When the temperature of an extrinsic semiconductor is increased, the pronounced effect is on Minority carriers.

In a semiconductor, current conduction is due to ……..

Last Answer : In a semiconductor, current conduction is due to Holes and free electrons.

The impurity level in an extrinsic semiconductor is about ….. of pure semiconductor.

Last Answer : The impurity level in an extrinsic semiconductor is about 1 atom for 108 atoms of pure semiconductor.

A hole in a semiconductor is defined as …………….

Last Answer : A hole in a semiconductor is defined as The incomplete part of an electron pair bond.

Addition of trivalent impurity to a semiconductor creates many ……..

Last Answer : Addition of trivalent impurity to a semiconductor creates many Holes.

Addition of pentavalent impurity to a semiconductor creates many ……..

Last Answer : Addition of pentavalent impurity to a semiconductor creates many Free electrons.

When a pentavalent impurity is added to a pure semiconductor, it becomes ………

Last Answer : When a pentavalent impurity is added to a pure semiconductor, it becomes n-type semiconductor.

The strength of a semiconductor crystal comes from ……..

Last Answer : The strength of a semiconductor crystal comes from Electron-pair bonds.

When a pure semiconductor is heated, its resistance …………..

Last Answer : When a pure semiconductor is heated, its resistance Goes down.

The most commonly used semiconductor is ………..

Last Answer : The most commonly used semiconductor is Silicon.

A semiconductor has ………… temperature coefficient of resistance.

Last Answer : A semiconductor has Negative temperature coefficient of resistance.

What type of PN diode is formed by using a fine metal wire and a section of N-type semiconductor material?

Description : What type of PN diode is formed by using a fine metal wire and a section of N-type semiconductor material?

Last Answer : Point-contact.

The width of depletion layer of a P-N junction – (1) decreases with light doping (2) increases with heavy doping (3) is independent of applied voltage (4) is increased under reverse bias

Description : The width of depletion layer of a P-N junction – (1) decreases with light doping (2) increases with heavy doping (3) is independent of applied voltage (4) is increased under reverse bias

Last Answer : (4) is increased under reverse bias Explanation: The total width of the depletion region is a function of applied reverse-bias and impurity concentration. Forward bias decreases the depletion region width whilst reverse bias increases it.

The width of depletion layer of a P-N junction (1) decreases with light doping (2) increases with heavy doping (3) is independent of applied voltage (4) is increased under reverse bias

Description : The width of depletion layer of a P-N junction (1) decreases with light doping (2) increases with heavy doping (3) is independent of applied voltage (4) is increased under reverse bias

Last Answer :  is increased under reverse bias

In a PN-junction with open circuit terminal (equilibrium), with P doping higher as compared to N

Description : In a PN-junction with open circuit terminal (equilibrium), with P doping higher as compared to N doping (A) N-side depletion region is small as compared to p-side depletion region (B) N-side ... depletion region (C) N-side depletion region is same as p-side depletion region (D) Cannot say

Last Answer : In a PN-junction with open circuit terminal (equilibrium), with P doping higher as compared to N doping N-side depletion region is small as compared to p-side depletion region

When a P - N junction is forward biased

Description : When a P - N junction is forward biased  1.only electrons in N-region are injected into P-region 2.only holes in P-region are injected into N-region 3.majority carriers in each region are injected into the other region 4.minority current is reduced to zero 

Last Answer : When a P - N junction is forward biased majority carriers in each region are injected into the other region 

In a P-N diode, assume that P-side is lightly doped and N-side is heavily doped. Based on this

Description : In a P-N diode, assume that P-side is lightly doped and N-side is heavily doped. Based on this information, which of the following statement is true ? (A) Depletion region is more extended in ... (C) Depletion region would be equal on both sides (D) Not enough information provided to give answer

Last Answer : In a P-N diode, assume that P-side is lightly doped and N-side is heavily doped. Based on this information, which of the following statement is true ? (A) Depletion region is more extended ... (C) Depletion region would be equal on both sides (D) Not enough information provided to give answer

Space charge region or depletion region in a P-N diode has

Description : Space charge region or depletion region in a P-N diode has (A) No charge (B) No fixed charge (C) No mobile charge (D) Both fixed and mobile charges

Last Answer : Space charge region or depletion region in a P-N diode has No mobile charge

Give one example of doping which produces p-type of semi-conductors.

Description : Give one example of doping which produces p-type of semi-conductors.

Last Answer : Ge doped with Al.

Silicon crystal can be converted to p-type semi-conductor by doping with (A) Phosphorous (B) Nitrogen (C) Carbon (D) Boron

Description : Silicon crystal can be converted to p-type semi-conductor by doping with (A) Phosphorous (B) Nitrogen (C) Carbon (D) Boron

Last Answer : Option D

What is n- type semiconductor ?

Description : What is n- type semiconductor ?

Last Answer : When a semiconductor substance is mixed with a five-component element as an adulterant or a waste, the negative charge carrier electron in them acts as the maximum charge carrier. Such semiconductors are called n- type semiconductors.

Explain the formation of an n-type semiconductor.

Description : Explain the formation of an n-type semiconductor.

Last Answer : When a small amount of a penta valant impurity like antimony, arsenic or phosphorous is added to a tetra valant element like Silicon or Germanium, four out of five electrons of each impurity ... becomes an n-type semiconductor. In an n-type semiconductor the majority charge carriers are electrons.

Classify each of the following as being either a p-type or an n-type Semiconductor.

Description : Classify each of the following as being either a p-type or an n-type Semiconductor.

Last Answer : (a) Ge dopped with In----p-type. (b) B dopped with Si----n-type.

What are the majority carriers in an N-type semiconductor?

Description : What are the majority carriers in an N-type semiconductor?

Last Answer : Electrons.

In the N-type semiconductor the charge carries are a) Holes b) Neutrons c) Protons d) Electrons

Description : In the N-type semiconductor the charge carries are a) Holes b) Neutrons c) Protons d) Electrons

Last Answer : d) Electrons

A semiconductor formed by addition of trivalent impurity is : a) P–Type b) N–Type c) Q–type d) M–Type

Description : A semiconductor formed by addition of trivalent impurity is : a) P–Type b) N–Type c) Q–type d) M–Type

Last Answer : d) M–Type

Hall effect may be used for which of the following? (A) determining whether the semiconductor is p or n type. (B) determining the carrier concentration. (C) calculating the mobility. (D) All the above.

Description : Hall effect may be used for which of the following? (A) determining whether the semiconductor is p or n type. (B) determining the carrier concentration. (C) calculating the mobility. (D) All the above.

Last Answer : (D) All the above. Ans: D Determining whether the semiconductor is p or n type, determining the carrier concentration, calculating the mobility

n-type semiconductor is an example of (A) extrinsic semiconductor. (B) intrinsic semiconductor. (C) super conductor. (D) insulators..

Description : n-type semiconductor is an example of (A) extrinsic semiconductor. (B) intrinsic semiconductor. (C) super conductor. (D) insulators..

Last Answer : (A) extrinsic semiconductor.

State the impurities for obtaining p-type and n-type semiconductor from intrinsic semi conductor.

Description : State the impurities for obtaining p-type and n-type semiconductor from intrinsic semi conductor. 

Last Answer : Crystals of Silicon and Germanium are doped using two types of dopants:  1. The impurities for obtaining n-type semiconductor from intrinsic semiconductor are pentavalent impurity; like Arsenic (As), Antimony ... semiconductor are trivalent impurity; like Indium (In), Boron (B), Aluminum (Al), etc.

Distinguish between P-type and N-type semiconductor.

Description : Distinguish between P-type and N-type semiconductor. 

Last Answer : N- type Semiconductor P- type Semiconductor When small amount of pentavalent impurity is added to a pure semiconductor is called N-type semiconductor When small amount of trivalent impurity ... of electrons The electrons are majority carriers The holes are majority carriers

n-type semiconductor can be made by adding ____ to intrinsic semiconductor

Description : n-type semiconductor can be made by adding ____ to intrinsic semiconductor (A) Boron (B) Arsenic (C) Carbon (D) Germanium

Last Answer : n-type semiconductor can be made by adding Arsenic to intrinsic semiconductor

Majority carriers in n type semiconductor are_______.

Description : Majority carriers in n type semiconductor are_______. A. Electrons B. Holes C. Both D. None

Last Answer : Majority carriers in n type semiconductor are Electrons.