Recent questions tagged igbt

Description : Describe with neat sketch the constructional details of IGBT.

Last Answer : Construction: Insulated gate bipolar transistor or IGBT, is a solid state devices primarily used as an electronic switch which, as it was developed, came to combine high efficiency and fast ... layer and p+ emitter constitute a BJT with a wide base region and hence small current gain.

Description : Draw construction of IGBT.

Last Answer : construction of IGBT

Description : Give the applications of IGBT

Last Answer : 1) AC and DC motor drives 2) SMPS 3) Inverters 4) Choppers 5) Solid-state Relays 6) solid-state Contactors

Description : The number of terminals present in IGBT is A) 2 B) 3 C) 4 D) 5

Last Answer : The number of terminals present in IGBT is 3

Description : Which phenomenon is present in thyristors but absent in BJT, MOSFET and IGBT ? (A) forward conduction (B) latching (C) forward blocking (D) reverse breakdown

Last Answer : Which phenomenon is present in thyristors but absent in BJT, MOSFET and IGBT ? (A) forward conduction (B) latching (C) forward blocking (D) reverse breakdown

Description : Compare BJT, MOSFET and IGBT .

Last Answer : BJT MOSFET IGBT BJT is a current controlled device. MOSFET is a voltage controlled device. IGBT is a voltage controlled device. The input impedance of BJT is low. ... is minority carrier device. MOSFET is majority carrier device. IGBT is minority carrier device.

Last Answer : Yes IGBT is costlier than BJT and MOSFET.

Last Answer : Because it has a higher switching frequency and heat tolerance.

Description : Justify the statements. 1. IGBT uses a vertically oriented structure. 2. IGBT is preferred as a power switch over both power BJT and MOSFET. 3. Punch through IGBT structure are more popular and are widely used.

Last Answer : 1. IGBT uses vertically oriented structure. IGBT use vertically oriented structure to reduce the resistance and to increase the current flow area. Hence IGBT uses vertically oriented ... DC circuit applications. Hence punch through IGBT structure are more popular and are widely used.

Description : Also, highlight the problem faced during parallel operation.

Last Answer : Parallel operation of IGBT: Parallel operation of IGBT is done for obtaining high current rating. Paralleling of IGBT reduces conduction losses and thermal stress. IGBT combines the qualities of ... . IGBTs must share losses equally otherwise IGBT may get failure due to thermal differences.

Last Answer : No, IGBT is not the current controlled device. IGBT is a voltage controlled device. IGBT have combine qualities of MOSFET and BJT. The high switching speed of MOSFET and low conduction losses of BJT. Also, IGBT which stands for Insulated Gate Bipolar Transistor have high input impedance.

Last Answer : IGBT is a bipolar device.

Last Answer :  IGBT or Insulated Gate Bi-polar Transistors are typically semiconductor devices aka.  controlled switches,  which find their applications in Power Electronics circuits such as Inverters, and electrical ... ( buy implementing suitable Pulse Width Modulation scheme ) * Lower cost 

Last Answer : IGBT is a bipolar device because current is carried by both holes and electrons.

Last Answer : ON state losses of IGBT is less as compared to MOSFET and BJT.