At room temperature, an intrinsic silicon crystal acts approximately as ……

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Answer :

At room temperature, an intrinsic silicon crystal acts approximately as An insulator.

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In a single crystal of an intrinsic semiconductor, the number of free carriers at the Fermi level at room

Description : In a single crystal of an intrinsic semiconductor, the number of free carriers at the Fermi level at room temperature is: A) Half the total number of electrons in the crystal B) Zero C) Half the number of atoms in the crystal D) Half the number of free electrons in the crystal

Last Answer : In a single crystal of an intrinsic semiconductor, the number of free carriers at the Fermi level at room temperature is: Zero 

At room temperature in an intrinsic piece of Si there could be

Description : At room temperature in an intrinsic piece of Si there could be (A) No free carriers (B) Some electrons but no holes (C) Some holes but no electrons (D) Equal number of holes and electrons

Last Answer : No  free   carriers.

At room temperature, an intrinsic semiconductor has ……….

Last Answer : At room temperature, an intrinsic semiconductor has A few free electrons and holes.

At absolute temperature, an intrinsic semiconductor has ……….

Last Answer : At absolute temperature, an intrinsic semiconductor has No holes or free electrons.

In an intrinsic semiconductor, the number of free electrons ………

Last Answer :  In an intrinsic semiconductor, the number of free electrons Equals the number of holes.

The strength of a semiconductor crystal comes from ……..

Last Answer : The strength of a semiconductor crystal comes from Electron-pair bonds.

Impurity atoms to be added to pure silicon in order to make a p-type semiconductor belongs to

Description : Impurity atoms to be added to pure silicon in order to make a p-type semiconductor belongs to (a) Phosphorous (b) Boron (c) Antimony (d) Aluminium 

Last Answer : Boron  , a  group  three  element.

Pure silicon is

Description : Pure silicon is (a) a p-type semiconductor (b) an n-type semiconductor (c) an intrinsic semiconductor (d) an extrinsic semiconductor 

Last Answer : Pure  silicon  is  an  intrinsic  semiconductor because  its  own  electrons   are  responsible   for   conduction.

Gold is often diffused into silicon PN junction devices to

Description : Gold is often diffused into silicon PN junction devices to   (A) increase the recombination rate (B) reduce the recombination rate (C) make silicon a direct gap semiconductor (D) make silicon semi-metal

Last Answer : To  increase  the  combinational  rate  at  the  pn  junction

The Maximum spectral response of the germanium and silicon is in the

Description : The Maximum spectral response of the germanium and silicon is in the   (A) infrared region (B) ultraviolet region (C) visible region (D) x-ray region

Last Answer : The Maximum spectral response of the germanium and silicon is in the ultraviolet region

Silicon has a preference in IC technology because

Description : Silicon has a preference in IC technology because  (a) it is an indirect semiconductor (b) it is a covalent semiconductor (c) it is an elemental semiconductor (d) of the availability of nature oxide SiO

Last Answer : Silicon has a preference in IC technology because of the availability of nature oxide SiO

Which of the following serves as donor impurity in Silicon?

Description : Which of the following serves as donor impurity in Silicon?  (A) Boron (B) Indium (C) Germanium (D) Antimony 

Last Answer : Which of the following will serve as a donor impurity in silicon?   (A) Boron (B) Indium (C) Germanium (D) Antimony

A pn junction acts as a ……….

Last Answer : A pn junction acts as a Unidirectional switch.

Pure semiconductors silicon and germanium are a) Extrinsic b) Intrinsic c) Insulator d) Diodes

Description : Pure semiconductors silicon and germanium are a) Extrinsic b) Intrinsic c) Insulator d) Diodes

Last Answer : b) Intrinsic

The Hall Effect voltage in intrinsic silicon

Description : The Hall Effect voltage in intrinsic silicon

Last Answer : The Hall Effect voltage in intrinsic silicon is negative

Pick out the wrong statement. (A) Lead can creep under its own weight at room temperature (B) The electrical conductivity of gold is considerably reduced by alloying additions due to the decrease in electron movement (C) Recrystallisation temperature decreases with decrease in strain in a cold worked metal (D) With increase in temperature, the electrical conductivity of intrinsic semi-conductor will increase

Description : Pick out the wrong statement. (A) Lead can creep under its own weight at room temperature (B) The electrical conductivity of gold is considerably reduced by alloying additions due to ... metal (D) With increase in temperature, the electrical conductivity of intrinsic semi-conductor will increase

Last Answer : (C) Recrystallisation temperature decreases with decrease in strain in a cold worked metal

At room temperature the current in an intrinsic semiconductor is due to

Last Answer : At room temperature, the current in an intrinsic semiconductor is due to holes and electrons.

Silicon crystal can be converted to p-type semi-conductor by doping with (A) Phosphorous (B) Nitrogen (C) Carbon (D) Boron

Description : Silicon crystal can be converted to p-type semi-conductor by doping with (A) Phosphorous (B) Nitrogen (C) Carbon (D) Boron

Last Answer : Option D

During the manufacture of a point-contact diode, what is the purpose of passing a relatively large current from the catwhisker to the silicon crystal?

Description : During the manufacture of a point-contact diode, what is the purpose of passing a relatively large current from the catwhisker to the silicon crystal?

Last Answer : . To form a small region of p-type material

Pure nickel is (A) Ferromagnetic above its curie point (i.e., 415°C)(B) Having h.c.p. crystal lattice(C) Ferromagnetic at room temperature(D) Not resistant to oxidation at high temperature

Description : Pure nickel is (A) Ferromagnetic above its curie point (i.e., 415°C) (B) Having h.c.p. crystal lattice (C) Ferromagnetic at room temperature (D) Not resistant to oxidation at high temperature

Last Answer : (C) Ferromagnetic at room temperature

Which of the following metals is in a liquid state at normal room temperature? (a) Sodium (b) Radium (c) Gallium (d) Silicon

Description : Which of the following metals is in a liquid state at normal room temperature? (a) Sodium (b) Radium (c) Gallium (d) Silicon

Last Answer : Ans:(c)

Why is silicon an insulator at room temperature?

Description : Why is silicon an insulator at room temperature?

Last Answer : Silicon has 4 valence electrons. Each atom forms 4 covalent bonds with its fourneighbouring atoms. At room temperature, the electrons are bound to the atom and arenot free. Hence semiconductors behave as insulators at room temperature.

Metalloids (A) Are good conductor of heat & electricity (B) Act as electron donors with metals & as electron acceptor with non metals (C) Are not necessarily solids at room temperature (D) Are compounds that exhibit both metallic & non-metallic properties to some extent and are exemplified by elements like germanium, silicon & boron

Description : Metalloids (A) Are good conductor of heat & electricity (B) Act as electron donors with metals & as electron acceptor with non metals (C) Are not necessarily solids at room temperature ... & non-metallic properties to some extent and are exemplified by elements like germanium, silicon & boron

Last Answer : D) Are compounds that exhibit both metallic & non-metallic properties to some extent and are exemplified by elements like germanium, silicon & boron

When a sample of germanium and silicon having same impurity density are kept at room temperature then Resistivity of silicon will be higher than that of germanium, Why?

Description : When a sample of germanium and silicon having same impurity density are kept at room temperature then Resistivity of silicon will be higher than that of germanium, Why?

Last Answer : Ans-The answer is simple. Consider the PN diode for Ge 0.3eV is the breakdown voltage and in the case of Si its 0.7eV since the impurities are added in the same amount the bond due to the other atoms of the Si makes it resistive compared to the Ge.. thats all!

What is the only non-metal element that is a liquid at room temperature and one atmosphere? w) bromine x) argon y) silicon z) selenium

Description : What is the only non-metal element that is a liquid at room temperature and one atmosphere? w) bromine x) argon y) silicon z) selenium

Last Answer : ANSWER: W -- BROMINE

Which of the following elements would most likely be a silvery solid at room temperature? w) Sodium x) Silicon y) Selenium z) Astatine

Description : Which of the following elements would most likely be a silvery solid at room temperature? w) Sodium x) Silicon y) Selenium z) Astatine

Last Answer : ANSWER: W -- SODIUM

Estimate the number of atoms comprising a silicon chip that is 0.2 millimeters by 0.2 millimeters by 0.1 millimeters, given that the density of silicon is 2.34 grams per cubic centimeter, the number of atoms in a gram-weight is approximately 6 x 1023 atoms, and the atomic weight of silicon is 28:

Description : Estimate the number of atoms comprising a silicon chip that is 0.2 millimeters by 0.2 millimeters by 0.1 millimeters, given that the density of silicon is 2.34 grams per cubic centimeter, the number of atoms in a gram-weight is approximately 6 x 1023 atoms, and the atomic weight of silicon is 28:

Last Answer : ANSWER: 2 x 1017

When the temperature of an extrinsic semiconductor is increased, the pronounced effect is on……

Last Answer : When the temperature of an extrinsic semiconductor is increased, the pronounced effect is on Minority carriers.

A semiconductor has ………… temperature coefficient of resistance.

Last Answer : A semiconductor has Negative temperature coefficient of resistance.

The ratio of population in Kashmir is now _____________ others approximately due to massive killings and other vile acts like settlement of non-Muslim migrants (Hindus and Sikhs) from Punjab. A. 34% Muslims and 66% B. 77% Muslims and 23% C. 66% Muslims and 34% D. Nove of Above

Description : The ratio of population in Kashmir is now _____________ others approximately due to massive killings and other vile acts like settlement of non-Muslim migrants (Hindus and Sikhs) from Punjab. A. 34% Muslims and 66% B. 77% Muslims and 23% C. 66% Muslims and 34% D. Nove of Above

Last Answer : ANSWER: C

The ratio of population in Kashmir is now _____________ others approximately due to massive killings and other vile acts like settlement of non-Muslim migrants (Hindus and Sikhs) from Punjab. A. 34% Muslims and 66% B. 77% Muslims and 23% C. 66% Muslims and 34% D. Nove of Above

Description : The ratio of population in Kashmir is now _____________ others approximately due to massive killings and other vile acts like settlement of non-Muslim migrants (Hindus and Sikhs) from Punjab. A. 34% Muslims and 66% B. 77% Muslims and 23% C. 66% Muslims and 34% D. Nove of Above

Last Answer : ANSWER: C

What is the effect of temperature on an intrinsic semiconductor?

Description : What is the effect of temperature on an intrinsic semiconductor?

Last Answer : An intrinsic semiconductor is basically a pure semiconductor, though some might argue that a small amount of doping can still yield an intrinsic semiconductor. In the crystal structure of ... semiconductor has a positive temperature coefficient. More heat, more conduction under the same conditions.

Which of the listed conditions describes the effect on intrinsic semiconductor operation as a result of a temperature increase? A. Additional heat sinks will be required B. Conductivity will increase C. Conductivity will decrease D. Resistivity will increase

Description : Which of the listed conditions describes the effect on intrinsic semiconductor operation as a result of a temperature increase? A. Additional heat sinks will be required B. Conductivity will increase C. Conductivity will decrease D. Resistivity will increase

Last Answer : Answer: B

C and Si both have same lattice structure, having 4 bonding electrons in each. However, C is insulator where as Si is intrinsic semiconductor. This is because (1) The four bonding electrons in the case of C lie in the third orbit, whereas for Si they lie in the fourth orbit (2) In case of C the valance band is not completely filled at absolute zero temperature (3) In case of C the conduction band is partly filled even at absolute zero temperature (4) The four bonding electrons in the case of C lie in the second orbit, whereas in the case of Si they lie in the third

Description : C and Si both have same lattice structure, having 4 bonding electrons in each. However, C is insulator where as Si is intrinsic semiconductor. This is because (1) The four bonding electrons in the case of C ... the case of C lie in the second orbit, whereas in the case of Si they lie in the third

Last Answer : (4) The four bonding electrons in the case of C lie in the second orbit, whereas in the case of Si they lie in the third

In case of semi-conductors, the ratio of conduction current to displacement current is:

Description :  In case of semi-conductors, the ratio of conduction current to displacement current is: A) more than 200 and less than 1000 B) less than 100 but greater than 1/100 C) less than 1/100 D) more than 1000

Last Answer : In case of semi-conductors, the ratio of conduction current to displacement current is:  less than 100 but greater than 1/100

In an n-type semiconductor, as the donor concentration ND increases, the Fermi level EF:

Description : In an n-type semiconductor, as the donor concentration ND increases, the Fermi level EF: (1) Remains unaltered (2) Moves towards the conduction band (3) Move towards the center of forbidden energy gap (4) May or may not move depending on temperature 

Last Answer : In an n-type semiconductor, as the donor concentration ND increases, the Fermi level EF: Moves towards the conduction band

The following property of semiconductors cannot be determined from Hall effect:

Description : The following property of semiconductors cannot be determined from Hall effect: (1) Semiconductor is n–type or p–type (2) The carrier concentration (3) The mobility of semiconductor (4) The atomic concentration of semiconductor

Last Answer : The following property of semiconductors cannot be determined from Hall effect: The atomic concentration of semiconductor

The advantage of a semiconductor strain gauge cover the wire round strain gauge is that

Description : The advantage of a semiconductor strain gauge cover the wire round strain gauge is that

Last Answer : The advantage of a semiconductor strain gauge cover the wire round strain gauge is that it is more sensitive

The semiconductor used for LEDs emitting in the visible range is

Description : The semiconductor used for LEDs emitting in the visible range is  (a) GaAs (b) GaAlAs (c) GalnAs (d) GaAsP

Last Answer : The semiconductor used for LEDs emitting in the visible range is GaAsP

The polar bonds existing in III-V compound semiconductor, may be considered as equivalent to

Description : The polar bonds existing in III-V compound semiconductor, may be considered as equivalent to  (a) 1 ionic bond and 3 covalent bonds (b) 1 ionic bond and 4 covalent bonds (c) 2 ionic bonds and 2 covalent bonds (d) 2 ionic bonds and 4 covalent bonds

Last Answer : The polar bonds existing in III-V compound semiconductor, may be considered as equivalent to 1 ionic bond and 3 covalent bonds

The material used for ‘doping’ to prepare N - type semiconductor is

Description : The material used for ‘doping’ to prepare N - type semiconductor is

Last Answer : The material used for ‘doping’ to prepare N - type semiconductor is Arsenic

Most of the transistors are NPN type and not PNP type because

Description : Most of the transistors are NPN type and not PNP type because  1.NPN transistor gives large voltage gain 2.NPN transistors are more negative than PNP transistors 3.In NPN transistor, the current ... free electrons which are less mobiles than holes 4.We can have high conduction is NPN transistors 

Last Answer : Most of the transistors are NPN type and not PNP type because We can have high conduction is NPN transistors 

When reverse bias is applied to a junction diode, it

Description : When reverse bias is applied to a junction diode, it  1.increases the potential barrier 2.decreases the potential barrier 3.greatly increases the minority carrier current 4.greatly increases the majority carrier current 

Last Answer : When reverse bias is applied to a junction diode, it increases the potential barrier 

When a P - N junction is forward biased

Description : When a P - N junction is forward biased  1.only electrons in N-region are injected into P-region 2.only holes in P-region are injected into N-region 3.majority carriers in each region are injected into the other region 4.minority current is reduced to zero 

Last Answer : When a P - N junction is forward biased majority carriers in each region are injected into the other region 

While comparing doped semiconductor vs. un-doped semiconductor, which of the following

Description : While comparing doped semiconductor vs. un-doped semiconductor, which of the following statements is NOT true ? (A) Doped semiconductor has smaller band-gap compared to un-doped semiconductor (B) ... to un-doped semiconductor (D) Doped as well as un-doped semiconductor have equal bandwidth

Last Answer : While comparing doped semiconductor vs. un-doped semiconductor, which of the following statements is NOT true ? (A) Doped semiconductor has smaller band-gap compared to un-doped semiconductor (B) ... to un-doped semiconductor (D) Doped as well as un-doped semiconductor have equal bandwidth

To increase mobility of electron in a given piece of semiconductor

Description : To increase mobility of electron in a given piece of semiconductor (A) Increase overall size of the semiconductor (B) Increase length (C) Increase width (D) Small increase in temperature above room temperature value

Last Answer : To increase mobility of electron in a given piece of semiconductor Small increase in temperature above room temperature value

In a P-N diode, assume that P-side is lightly doped and N-side is heavily doped. Based on this

Description : In a P-N diode, assume that P-side is lightly doped and N-side is heavily doped. Based on this information, which of the following statement is true ? (A) Depletion region is more extended in ... (C) Depletion region would be equal on both sides (D) Not enough information provided to give answer

Last Answer : In a P-N diode, assume that P-side is lightly doped and N-side is heavily doped. Based on this information, which of the following statement is true ? (A) Depletion region is more extended ... (C) Depletion region would be equal on both sides (D) Not enough information provided to give answer

Space charge region or depletion region in a P-N diode has

Description : Space charge region or depletion region in a P-N diode has (A) No charge (B) No fixed charge (C) No mobile charge (D) Both fixed and mobile charges

Last Answer : Space charge region or depletion region in a P-N diode has No mobile charge

The leakage current in a pn junction is of the order of

Description : The leakage current in a pn junction is of the order of

Last Answer : The leakage current in a pn junction is of the order of µA.

With forward bias to a pn junction , the width of depletion layer ………

Last Answer : With forward bias to a pn junction , the width of depletion layer Decreases.