Impurity atoms to be added to pure silicon in order to make a p-type semiconductor belongs to

Impurity atoms to be added to pure silicon in order to make a p-type semiconductor belongs to (a) Phosphorous (b) Boron (c) Antimony (d) Aluminium 
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1 Answer

Answer :

Boron  , a  group  three  element.
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Related questions

When a pentavalent impurity is added to a pure semiconductor, it becomes ………

Last Answer : When a pentavalent impurity is added to a pure semiconductor, it becomes n-type semiconductor.

The impurity level in an extrinsic semiconductor is about ….. of pure semiconductor.

Last Answer : The impurity level in an extrinsic semiconductor is about 1 atom for 108 atoms of pure semiconductor.

Addition of trivalent impurity to a semiconductor creates many ……..

Last Answer : Addition of trivalent impurity to a semiconductor creates many Holes.

Addition of pentavalent impurity to a semiconductor creates many ……..

Last Answer : Addition of pentavalent impurity to a semiconductor creates many Free electrons.

Which of the following serves as donor impurity in Silicon?

Description : Which of the following serves as donor impurity in Silicon?  (A) Boron (B) Indium (C) Germanium (D) Antimony 

Last Answer : Which of the following will serve as a donor impurity in silicon?   (A) Boron (B) Indium (C) Germanium (D) Antimony

The process of addition of impurity in pure semiconductor is : a) Doping b) Radiating c) Mixing d) Insulating

Description : The process of addition of impurity in pure semiconductor is : a) Doping b) Radiating c) Mixing d) Insulating

Last Answer : d) Insulating

As the doping to a pure semiconductor increases, the bulk resistance of the semiconductor ………..

Last Answer : As the doping to a pure semiconductor increases, the bulk resistance of the semiconductor Decreases.

When a pure semiconductor is heated, its resistance …………..

Last Answer : When a pure semiconductor is heated, its resistance Goes down.

Explain types of impurity added in a semiconductor with one example each.

Description : Explain types of impurity added in a semiconductor with one example each.

Last Answer : There are two types of impurities added in a intrinsic semiconductor which are as follows 1.Donor Impurity 2.Acceptor Impurity 1.Donor Impurity - These are pentavalent which means they have five ... called as Acceptor doping. It is used to manufacture P-type semiconductor Eg:Boron,Gallium,Indium

Pure silicon is

Description : Pure silicon is (a) a p-type semiconductor (b) an n-type semiconductor (c) an intrinsic semiconductor (d) an extrinsic semiconductor 

Last Answer : Pure  silicon  is  an  intrinsic  semiconductor because  its  own  electrons   are  responsible   for   conduction.

A semiconductor formed by addition of trivalent impurity is : a) P–Type b) N–Type c) Q–type d) M–Type

Description : A semiconductor formed by addition of trivalent impurity is : a) P–Type b) N–Type c) Q–type d) M–Type

Last Answer : d) M–Type

When a semiconductor is doped with a P-type impurity, each impurity atom will (A) acquire negative charge. (B) acquire positive charge. (C) remain electrically neutral. (D) give away one electron.

Description : When a semiconductor is doped with a P-type impurity, each impurity atom will (A) acquire negative charge. (B) acquire positive charge. (C) remain electrically neutral. (D) give away one electron.

Last Answer : (A) acquire negative charge.

A trivalent impurity has ….. valence electrons

Last Answer : A trivalent impurity has 3 valence electrons.

A pentavalent impurity has ………. Valence electrons

Last Answer : A pentavalent impurity has 5 Valence electrons.

In an n-type semiconductor, as the donor concentration ND increases, the Fermi level EF:

Description : In an n-type semiconductor, as the donor concentration ND increases, the Fermi level EF: (1) Remains unaltered (2) Moves towards the conduction band (3) Move towards the center of forbidden energy gap (4) May or may not move depending on temperature 

Last Answer : In an n-type semiconductor, as the donor concentration ND increases, the Fermi level EF: Moves towards the conduction band

The material used for ‘doping’ to prepare N - type semiconductor is

Description : The material used for ‘doping’ to prepare N - type semiconductor is

Last Answer : The material used for ‘doping’ to prepare N - type semiconductor is Arsenic

An n-type semiconductor is ………

Last Answer : An n-type semiconductor is Electrically neutral.

Addition of trivalent impurity to a semiconductor creates many (A) holes. (B) free electrons. (C) valance electrons. (D) bound electrons.

Description : Addition of trivalent impurity to a semiconductor creates many (A) holes. (B) free electrons. (C) valance electrons. (D) bound electrons.

Last Answer : (B) free electrons.

When Arsenic atoms are added Germanium lattice, it becomes a/an - (1) Insulator (2) Superconductor (3) Intrinsic semiconductor (4) Extrinsic semiconductor

Description : When Arsenic atoms are added Germanium lattice, it becomes a/an - (1) Insulator (2) Superconductor (3) Intrinsic semiconductor (4) Extrinsic semiconductor

Last Answer : (4) Extrinsic semiconductor Explanation: When a peritavalent (donor) impurity, like arsenic, is added to germanium, it will form covalent bonds with thegermanium atoms, leaving 1 electron relatively ... this manner - either with Nor P-type impurities - are referred to as EXTRINSIC semiconductors.

When Arsenic atoms are added to Germanium lattice, it becomes a/an (1) Insulator (2) Superconductor (3) Intrinsic semiconductor (4) Extrinsic semiconductor

Description : When Arsenic atoms are added to Germanium lattice, it becomes a/an (1) Insulator (2) Superconductor (3) Intrinsic semiconductor (4) Extrinsic semiconductor

Last Answer : Extrinsic semiconductor

In a single crystal of an intrinsic semiconductor, the number of free carriers at the Fermi level at room

Description : In a single crystal of an intrinsic semiconductor, the number of free carriers at the Fermi level at room temperature is: A) Half the total number of electrons in the crystal B) Zero C) Half the number of atoms in the crystal D) Half the number of free electrons in the crystal

Last Answer : In a single crystal of an intrinsic semiconductor, the number of free carriers at the Fermi level at room temperature is: Zero 

The advantage of a semiconductor strain gauge cover the wire round strain gauge is that

Description : The advantage of a semiconductor strain gauge cover the wire round strain gauge is that

Last Answer : The advantage of a semiconductor strain gauge cover the wire round strain gauge is that it is more sensitive

The semiconductor used for LEDs emitting in the visible range is

Description : The semiconductor used for LEDs emitting in the visible range is  (a) GaAs (b) GaAlAs (c) GalnAs (d) GaAsP

Last Answer : The semiconductor used for LEDs emitting in the visible range is GaAsP

The polar bonds existing in III-V compound semiconductor, may be considered as equivalent to

Description : The polar bonds existing in III-V compound semiconductor, may be considered as equivalent to  (a) 1 ionic bond and 3 covalent bonds (b) 1 ionic bond and 4 covalent bonds (c) 2 ionic bonds and 2 covalent bonds (d) 2 ionic bonds and 4 covalent bonds

Last Answer : The polar bonds existing in III-V compound semiconductor, may be considered as equivalent to 1 ionic bond and 3 covalent bonds

While comparing doped semiconductor vs. un-doped semiconductor, which of the following

Description : While comparing doped semiconductor vs. un-doped semiconductor, which of the following statements is NOT true ? (A) Doped semiconductor has smaller band-gap compared to un-doped semiconductor (B) ... to un-doped semiconductor (D) Doped as well as un-doped semiconductor have equal bandwidth

Last Answer : While comparing doped semiconductor vs. un-doped semiconductor, which of the following statements is NOT true ? (A) Doped semiconductor has smaller band-gap compared to un-doped semiconductor (B) ... to un-doped semiconductor (D) Doped as well as un-doped semiconductor have equal bandwidth

To increase mobility of electron in a given piece of semiconductor

Description : To increase mobility of electron in a given piece of semiconductor (A) Increase overall size of the semiconductor (B) Increase length (C) Increase width (D) Small increase in temperature above room temperature value

Last Answer : To increase mobility of electron in a given piece of semiconductor Small increase in temperature above room temperature value

At absolute temperature, an intrinsic semiconductor has ……….

Last Answer : At absolute temperature, an intrinsic semiconductor has No holes or free electrons.

At room temperature, an intrinsic semiconductor has ……….

Last Answer : At room temperature, an intrinsic semiconductor has A few free electrons and holes.

In an intrinsic semiconductor, the number of free electrons ………

Last Answer :  In an intrinsic semiconductor, the number of free electrons Equals the number of holes.

When the temperature of an extrinsic semiconductor is increased, the pronounced effect is on……

Last Answer : When the temperature of an extrinsic semiconductor is increased, the pronounced effect is on Minority carriers.

In a semiconductor, current conduction is due to ……..

Last Answer : In a semiconductor, current conduction is due to Holes and free electrons.

A hole in a semiconductor is defined as …………….

Last Answer : A hole in a semiconductor is defined as The incomplete part of an electron pair bond.

The strength of a semiconductor crystal comes from ……..

Last Answer : The strength of a semiconductor crystal comes from Electron-pair bonds.

The most commonly used semiconductor is ………..

Last Answer : The most commonly used semiconductor is Silicon.

A semiconductor has ………… temperature coefficient of resistance.

Last Answer : A semiconductor has Negative temperature coefficient of resistance.

In order to obtain p-type germanium it should be doped with a (A) Trivalent impurity. (B) Tetravalent impurity. (C) Pentavalent impurity. (D) Any of the above will do.

Description : In order to obtain p-type germanium it should be doped with a (A) Trivalent impurity. (B) Tetravalent impurity. (C) Pentavalent impurity. (D) Any of the above will do.

Last Answer : (A) Trivalent impurity.

When a sample of germanium and silicon having same impurity density are kept at room temperature then Resistivity of silicon will be higher than that of germanium, Why?

Description : When a sample of germanium and silicon having same impurity density are kept at room temperature then Resistivity of silicon will be higher than that of germanium, Why?

Last Answer : Ans-The answer is simple. Consider the PN diode for Ge 0.3eV is the breakdown voltage and in the case of Si its 0.7eV since the impurities are added in the same amount the bond due to the other atoms of the Si makes it resistive compared to the Ge.. thats all!

Gold is often diffused into silicon PN junction devices to

Description : Gold is often diffused into silicon PN junction devices to   (A) increase the recombination rate (B) reduce the recombination rate (C) make silicon a direct gap semiconductor (D) make silicon semi-metal

Last Answer : To  increase  the  combinational  rate  at  the  pn  junction

The Maximum spectral response of the germanium and silicon is in the

Description : The Maximum spectral response of the germanium and silicon is in the   (A) infrared region (B) ultraviolet region (C) visible region (D) x-ray region

Last Answer : The Maximum spectral response of the germanium and silicon is in the ultraviolet region

Silicon has a preference in IC technology because

Description : Silicon has a preference in IC technology because  (a) it is an indirect semiconductor (b) it is a covalent semiconductor (c) it is an elemental semiconductor (d) of the availability of nature oxide SiO

Last Answer : Silicon has a preference in IC technology because of the availability of nature oxide SiO

At room temperature, an intrinsic silicon crystal acts approximately as ……

Last Answer : At room temperature, an intrinsic silicon crystal acts approximately as An insulator.

In n type semi conductor added impurity is (A) pentavalent. (B) divalent. (C) tetravalent. (D) trivalent.

Description : In n type semi conductor added impurity is (A) pentavalent. (B) divalent. (C) tetravalent. (D) trivalent.

Last Answer : (A) pentavalent.

The impurity atoms is semiconductors?

Last Answer : The impurity atoms is semiconductors reduce the energy gap.

If the iron ore contains clay as an impurity, the flux added during calcination, is (A) Clay (B) Lime stone (C) Argillaceous iron ore (D) All the above

Description : If the iron ore contains clay as an impurity, the flux added during calcination, is (A) Clay (B) Lime stone (C) Argillaceous iron ore (D) All the above

Last Answer : Answer: Option B

IBM 7000 digital computer A) Belongs to second generation B) Uses VLSI C) Employs semiconductor memory D) Has modular constructions

Description : IBM 7000 digital computer A) Belongs to second generation B) Uses VLSI C) Employs semiconductor memory D) Has modular constructions

Last Answer : Answer : D

IBM 7000 digital computer a. Belongs to second generation b. Uses VLSI c. Employs semiconductor memory d. Has modular constructions

Description : IBM 7000 digital computer a. Belongs to second generation b. Uses VLSI c. Employs semiconductor memory d. Has modular constructions

Last Answer : Employs semiconductor memory

BM 7000 digital computer a. Belongs to second generation b. Uses VLSI c. Employs semiconductor memory d. Has modular constructions

Description : BM 7000 digital computer a. Belongs to second generation b. Uses VLSI c. Employs semiconductor memory d. Has modular constructions

Last Answer : c. Employs semiconductor memory

Which of the following is a semiconductor? (a) Phosphorus (b) Wood (c) Silicon (d) Glass

Description : Which of the following is a semiconductor? (a) Phosphorus (b) Wood (c) Silicon (d) Glass

Last Answer : Ans:(c)

Give reason: Silicon is used widely even through Germanium is a better semiconductor material.

Description : Give reason: Silicon is used widely even through Germanium is a better semiconductor material.

Last Answer : Silicon is the second most abundantly available material and it can be used at higher temperature. Hence it widely used than Germanium.