A semiconductor device made out of a material having very high temperature coefficient of resistance is

A semiconductor device made out of a material having very high temperature coefficient of resistance is
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A semiconductor device made out of a material having very high temperature coefficient of resistance is Thermistor

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what is the temperature coefficient of Resistance of semiconductor ?

Description : what is the temperature coefficient of Resistance of semiconductor ?

Last Answer : semiconductors have negative temperature coefficient of resistance. means as the temperature increases resistance decreases.

A semiconductor has ………… temperature coefficient of resistance.

Last Answer : A semiconductor has Negative temperature coefficient of resistance.

The temperature coefficient of resistance of the material of a wire is `0.00125^(@)C^(-1)`. Its resistance at `27^(@)C` is `1 Omega`. At what temperat

Description : The temperature coefficient of resistance of the material of a wire is `0.00125^(@)C^(-1)`. Its resistance at `27^(@)C` is `1 Omega`. At what temperat

Last Answer : The temperature coefficient of resistance of the material of a wire is `0.00125^(@)C^(-1)`. Its resistance at ... K B. 1100 K C. 1400 K D. 1127 K

The existing resistance of a conductor is dependent upon its length, cross-sectional area, _____________. A. temperature and insulation B. material and insulation C. resistive coefficient and material D. material and temperature

Description : The existing resistance of a conductor is dependent upon its length, cross-sectional area, _____________. A. temperature and insulation B. material and insulation C. resistive coefficient and material D. material and temperature

Last Answer : Answer: D

Which temperature coefficient indicates a material whose resistance increases as temperature increases?

Description : Which temperature coefficient indicates a material whose resistance increases as temperature increases?

Last Answer : Positive.

The metal having the lowest temperature coefficient of resistance is

Description :  The metal having the lowest temperature coefficient of resistance is

Last Answer : The metal having the lowest temperature coefficient of resistance is gold.

Problem on temperature coefficient of resistance 3

Description : Problem on temperature coefficient of resistance 3

Last Answer : Problem on temperature coefficient of resistance 3

Problem on temperature coefficient of resistance 2

Description : Problem on temperature coefficient of resistance 2

Last Answer : Problem on temperature coefficient of resistance 2

Problem on temperature coefficient of resistance 1

Description : Problem on temperature coefficient of resistance 1

Last Answer : Problem on temperature coefficient of resistance 1

The resistance temperature coefficient is defined as

Last Answer : The resistance temperature coefficient is defined as the ratio of increase in resistance per degree centigrade to the resistance at 0oC.

A metal resistor has resistance of 10 ohm at 0°C and 11 ohms at 160°C, the temperature coefficient is

Last Answer : A metal resistor has resistance of 10 ohm at 0°C and 11 ohms at 160°C, the temperature coefficient is 0.000625 /°C.

what is the temperature coefficient of Resistance of conductor ?

Description : what is the temperature coefficient of Resistance of conductor ?

Last Answer : conductors have positive coefficient. means as the temperature increases resistance also increases.

A light dependent resistor is made up of A. low resistance semiconductor B. low resistance metaC. high resistance semiconductor D. high resistance metall

Description : A light dependent resistor is made up of A. low resistance semiconductor B. low resistance metal C. high resistance semiconductor D. high resistance metal

Last Answer :  high resistance semiconductor

fabrication of semiconductor device and describe its need.

Description : State any four materials used in fabrication of semiconductor device and describe its need.

Last Answer : For fabrication of semiconductor devices like transistors diode, solar cell etc. we have to make use of following types of materials  1. Substrate: o It is used for deposition of thin ... . o Metal cans and sealed glass containers satisfy the extreme requirements of space and military users.

An important characteristic of the device shown in figure 'B' of the illustration as compared with conventional NPN or PNP transistors is its ____________. EL-0065 A. higher temperature sensitivity B. higher power ratings C. very high input resistance D. all of the above

Description : An important characteristic of the device shown in figure 'B' of the illustration as compared with conventional NPN or PNP transistors is its ____________. EL-0065 A. higher temperature sensitivity B. higher power ratings C. very high input resistance D. all of the above

Last Answer : Answer: C

A semiconductor device made up of a single p-n Junction is called a: w) transistor x) diode y) Fet z) integrated circuit

Description : A semiconductor device made up of a single p-n Junction is called a: w) transistor x) diode y) Fet z) integrated circuit

Last Answer : ANSWER: X -- DIODE

Elastomers are (A) Thermosetting material (B) Exemplified by protein derivatives (C) Having high flexural strength (D) Having very high tensile strength and heat resistance

Description : Elastomers are (A) Thermosetting material (B) Exemplified by protein derivatives (C) Having high flexural strength (D) Having very high tensile strength and heat resistance

Last Answer : (C) Having high flexural strength

A semiconductor that decreases in resistance with an increase in temperature is known as a _____________. A. resistor B. thermistor C. diode D. thermopile

Description : A semiconductor that decreases in resistance with an increase in temperature is known as a _____________. A. resistor B. thermistor C. diode D. thermopile

Last Answer : Answer: B

(i) Explain the process of diffusion in semiconductor material. (ii) Explain Hall effect.

Description : (i) Explain the process of diffusion in semiconductor material. (ii) Explain Hall effect.

Last Answer : (i) Diffusion: In a semi conductor bar a concentration gradient exist when either number of electrons or holes is greater in one region of a semi conductor as compared to other region. When ... to determine whether a semiconductor is N type or P type, and to find carrier concentration

Dry etching refers to removal of material, typically a masked pattern of semiconductor material, by exposing...

Description : Dry etching refers to removal of material, typically a masked pattern of semiconductor material, by exposing material to a bombardment of ions which contain (a) Plasma of nitrogen, chlorine and ... of nitrogen, phosphorous and boron trichloride (d) Plasma of nitrogen, chlorine and boron trioxide

Last Answer : Plasma of nitrogen, chlorine and boron trichloride. Other gases include argon and helium.

When hot liquid is poured into a thick glass tumbler, it cracks because glass – (1) is a bad conductor of heat so only inner surface expands (2) has high temperature coefficient of expansion (3) has a very low specific heat (4) has low temperature coefficient of expansion

Description : When hot liquid is poured into a thick glass tumbler, it cracks because glass – (1) is a bad conductor of heat so only inner surface expands (2) has high temperature coefficient of expansion (3) has a very low specific heat (4) has low temperature coefficient of expansion

Last Answer : (1) is a bad conductor of heat so only inner surface expands Explanation: When hot liquid is poured into a thick glass tumbler, it cracks because glass is a bad conductor of heat so only inner surface expands.

Thermistor with high negative temperature coefficient are very accurate for measuring low temperature especially near is a. 10 K b. 70K c. 200K d. 35K

Description : Thermistor with high negative temperature coefficient are very accurate for measuring low temperature especially near is a. 10 K b. 70K c. 200K d. 35K

Last Answer : c. 200K

When hot liquid is poured into a thick glass tumbler, it cracks because glass : (1) is a bad conductor of heat so only inner surface expands (2) has high temperature coefficient of expansion (3) has a very low specific heat (4) has low temperature coefficient of expansion

Description : When hot liquid is poured into a thick glass tumbler, it cracks because glass : (1) is a bad conductor of heat so only inner surface expands (2) has high temperature coefficient of expansion (3) has a very low specific heat (4) has low temperature coefficient of expansion

Last Answer :  is a bad conductor of heat so only inner surface expands 

What device is similar to an RTD but has a negative temperature coefficient?

Description : What device is similar to an RTD but has a negative temperature coefficient?  A) Strain gauge B) Thermistor C) Negative-type RTD D) Thermocouple

Last Answer : What device is similar to an RTD but has a negative temperature coefficients 

Which electronic component was made out of semiconductor material? A) Vacuum tubes B) Transistors C) ICs D) All of above

Description : Which electronic component was made out of semiconductor material? A) Vacuum tubes B) Transistors C) ICs D) All of above

Last Answer : Answer : C

Pick out the wrong statement. (A) Copper is the metal having the highest electronic conductivity (B) Hardenability & Weldability of metals are inversely related (C) Covalent bonding formed by sharing of electrons is present in all semiconductor materials (D) Glass transition temperature applies to 'polymers' but not to 'glasses'

Description : Pick out the wrong statement. (A) Copper is the metal having the highest electronic conductivity (B) Hardenability & Weldability of metals are inversely related (C) Covalent bonding formed by ... all semiconductor materials (D) Glass transition temperature applies to 'polymers' but not to 'glasses'

Last Answer : Option A

Kel-F is a material, which is (A) Chemically known as Polychlorotrifluoroethylene (PTFE) (B) Having excellent chemical & high temperature resistance (upto 200°C) (C) Having elastomeric properties (D) All (A), (B) and (C)

Description : Kel-F is a material, which is (A) Chemically known as Polychlorotrifluoroethylene (PTFE) (B) Having excellent chemical & high temperature resistance (upto 200°C) (C) Having elastomeric properties (D) All (A), (B) and (C)

Last Answer : (D) All (A), (B) and (C)

Define – resistance and resistivity. State relationship between them. Give one material having high resistivity.

Description : Define – resistance and resistivity. State relationship between them. Give one material having high resistivity.

Last Answer : Ans: Resistance and Resistivity: Resistance: It is the opposition offered by the conductor to the flow of current. Resistivity: It is property of the substance by virtue of which it opposes to ... high resistivity: Mica, Nichrom, Rubber, Glass, Plastic Porcelain, Dry wood, Insulating material etc.

In a transistor, the base is _______. (1) an insulator (2) a conductor of low resistance (3) a conductor of high resistance (4) an extrinsic semiconductor

Description : In a transistor, the base is _______. (1) an insulator (2) a conductor of low resistance (3) a conductor of high resistance (4) an extrinsic semiconductor

Last Answer : (2) a conductor of low resistance Explanation: A transistor is a semiconductor device used to amplify and switch electronic signals and electrical power. It is composed of semiconductor material with at least three terminals for connection to an external circuit.

It is the made from semiconductor material such as aluminum-galium-arsenide or gallium-arsenide-phosphide. A. APD B. Injection laser diode C. Light emitting diode D. Positive-intrinsic-negative

Description : It is the made from semiconductor material such as aluminum-galium-arsenide or gallium-arsenide-phosphide. A. APD B. Injection laser diode C. Light emitting diode D. Positive-intrinsic-negative

Last Answer : C. Light emitting diode

Hall probe is made up of A. metals B. non metals C. semiconductor D. radioactive material

Description : Hall probe is made up of A. metals B. non metals C. semiconductor D. radioactive material

Last Answer : semiconductor

C and Si both have same lattice structure, having 4 bonding electrons in each. However, C is insulator where as Si is intrinsic semiconductor. This is because (1) The four bonding electrons in the case of C lie in the third orbit, whereas for Si they lie in the fourth orbit (2) In case of C the valance band is not completely filled at absolute zero temperature (3) In case of C the conduction band is partly filled even at absolute zero temperature (4) The four bonding electrons in the case of C lie in the second orbit, whereas in the case of Si they lie in the third

Description : C and Si both have same lattice structure, having 4 bonding electrons in each. However, C is insulator where as Si is intrinsic semiconductor. This is because (1) The four bonding electrons in the case of C ... the case of C lie in the second orbit, whereas in the case of Si they lie in the third

Last Answer : (4) The four bonding electrons in the case of C lie in the second orbit, whereas in the case of Si they lie in the third

A semiconductor is a material with a _____________. A. conductivity higher than a normal conductor B. conductivity higher than a normal insulator C. high conductivity at low temperatures D. low conductivity at high temperatures

Description : A semiconductor is a material with a _____________. A. conductivity higher than a normal conductor B. conductivity higher than a normal insulator C. high conductivity at low temperatures D. low conductivity at high temperatures

Last Answer : Answer: B

The temperature coefficient of copper is `0.004^(@)C^(-1)`. Find the resistance of a 5 m long copper wire of diameter 0.2 mm at `100^(@)C`, if the res

Description : The temperature coefficient of copper is `0.004^(@)C^(-1)`. Find the resistance of a 5 m long copper wire of diameter 0.2 mm at `100^(@)C`, if the res

Last Answer : The temperature coefficient of copper is `0.004^(@)C^(-1)`. Find the resistance of a 5 m long copper wire of ... `0^(@)C` is `1.7xx10^(-8) Omega` m.

The temperature coefficient of a resistance wire is `0.00 12.5^(@)C^(-1)`. At 300 K, its resistance is `1 Omega`. At what temperature the resistance o

Description : The temperature coefficient of a resistance wire is `0.00 12.5^(@)C^(-1)`. At 300 K, its resistance is `1 Omega`. At what temperature the resistance o

Last Answer : The temperature coefficient of a resistance wire is `0.00 12.5^(@)C^(-1)`. At 300 K, its ... the resistance of the wire will be `2 Omega` ?

The temperature coefficient of resistance of an alloy used for making resistor is

Description : The temperature coefficient of resistance of an alloy used for making resistor is

Last Answer : The temperature coefficient of resistance of an alloy used for making resistor is A. small and ... C. large and positive D. large and negative

The resistance of a bulb filmanet is `100Omega` at a temperature of `100^@C`. If its temperature coefficient of resistance be 0.005 per `.^@C`, its re

Description : The resistance of a bulb filmanet is `100Omega` at a temperature of `100^@C`. If its temperature coefficient of resistance be 0.005 per `.^@C`, its re

Last Answer : The resistance of a bulb filmanet is `100Omega` at a temperature of `100^@C`. If its temperature coefficient of ... . `200^(@)C` D. `400^(@)C`

When temperature rises, resistance of negative temperature coefficient thermistor A. increases B. decreases C. zero D. infinity

Description : When temperature rises, resistance of negative temperature coefficient thermistor A. increases B. decreases C. zero D. infinity

Last Answer : decreases

Define the temperature coefficient of resistance.

Description : Define the temperature coefficient of resistance.

Last Answer : The amount of increase in the resistance of a 1-ohm sample of the conductor per degree of temperature rise above 0º C

The fractional change in resistance per kelvin is known as, a. temperature coefficient of resistance b. coefficient of Voltage of charge c. thermal expansion d. all of above

Description : The fractional change in resistance per kelvin is known as, a. temperature coefficient of resistance b. coefficient of Voltage of charge c. thermal expansion d. all of above

Last Answer : a. temperature coefficient of resistance

Semi-conductors have ________ temperature coefficient of resistance. (A) Negative (B) Positive (C) Both positive and negative (D) None of the above

Description : Semi-conductors have ________ temperature coefficient of resistance. (A) Negative (B) Positive (C) Both positive and negative (D) None of the above

Last Answer : (A) Negative

Which amongst the following has a negative coefficient of temperature for resistance?

Description : Which amongst the following has a negative coefficient of temperature for resistance?  a) Copper b) Lead c) Carbon d) Aluminium

Last Answer : Which amongst the following has a negative coefficient of temperature for resistance? Carbon 

Which is very high speed semiconductor memory which can speed up CPU: a) Secondary Memory b) Cache Memory c) Primary Memory d) None of These

Description : Which is very high speed semiconductor memory which can speed up CPU: a) Secondary Memory b) Cache Memory c) Primary Memory d) None of These

Last Answer : b) Cache Memory

At very high temperatures, extrinsic semiconductor becomes intrinsic semiconductor because

Description : At very high temperatures, extrinsic semiconductor becomes intrinsic semiconductor because (A) Of drive in diffusion of dopants & carriers. (B) Band to band transition dominates impurity ionization. (C) ... band to band transition. (D) Band to band transition is balanced by impurity ionisation.

Last Answer : At very high temperatures, extrinsic semiconductor becomes intrinsic semiconductor because Impurity ionization dominates band to band transition.

A modern power semiconductor device IGBT is combines the characteristics of a) BJT and MOSFET b) FCT and GTO c) SCR and MOSFET d) SCR and BJT

Description : A modern power semiconductor device IGBT is combines the characteristics of a) BJT and MOSFET b) FCT and GTO c) SCR and MOSFET d) SCR and BJT

Last Answer : Ans: BJT and MOSFET

What is the name given to the semiconductor device that has three or more elements?

Description : What is the name given to the semiconductor device that has three or more elements?

Last Answer : Transistor

What semiconductor device produces electrical energy when exposed to light?

Description : What semiconductor device produces electrical energy when exposed to light?

Last Answer : Photovoltaic cell.

Power Semiconductor device - history

Description : Power Semiconductor device - history

Last Answer : Power electronics and converters utilizing them made a head start when the first device the Silicon Controlled Rectifier was proposed by Bell Labs and commercially produced by General Electric in ... IIT, Kharagpur  Distributed under Creative Commons Attribution-ShareAlike - CC BY-SA.

A snubber circuit is connected to the power semiconductor device to reduce the

Description : A snubber circuit is connected to the power semiconductor device to reduce the (A) turn-on time (B) turn-off time (C) electrical stresses (D) thermal resistance

Last Answer : A snubber circuit is connected to the power semiconductor device to reduce the electrical stresses

Which semiconductor device acts like a diode and two transistor : -

Description : Which semiconductor device acts like a diode and two transistor : -  a) SCR b) Triac c) UJT d) Diac

Last Answer : Which semiconductor device acts like a diode and two transistor : - UJT