A part of transistor which is heavily doped to produce large number of majority carriers is (a) Emitter (b) Base (c) Collector (d) any of above

A part of transistor which is heavily doped to produce large number of majority carriers is
(a) Emitter (b) Base (c) Collector (d) any of above
by

1 Answer

Answer :

(a) Emitter
by

Related questions

The part of transistor which is heavily doped to produce a large number of majority carriers is –

Description : The part of transistor which is heavily doped to produce a large number of majority carriers is –

Last Answer : Emitter

The part of transistor which is heavily doped to produce a large number of majority carriers is

Description : The part of transistor which is heavily doped to produce a large number of majority carriers is

Last Answer : Emitter

The emitter of a transistor is doped the heaviest because it: (a) Acts as a supplier of charge carriers (b) Dissipates maximum power c) has a large resistance (d) has a small resistance

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Under ideal conditions, the collector current is (a) Equal to base current (b) Nearly equal to emitter current (c) Less than base current (d) always zero

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In a transistor, the conventional current flows from base to emitter. The transistor is (a) NPN (b) PNP (c) FET (d) None of these

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Which of the following actions can be carried out in order to prevent thermal runaway in a transistor? A. Increase the current through the collector-base junction. B. Install a heat sink. C. Shift the 'Q' point to increase collector current. D. Increase the potential difference between the emitter and the base.

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N-type region has majority charge carriers as (a) Holes (b) protons (c) neutrons (d) electrons

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In the illustration, the large battery and R(L) are in the circuit to ________. EL-0022 A. forward bias the emitter-base B. reverse bias the emitter-base C. forward bias the emitter/collector D. reverse bias the emitter/collector

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In the common–emitter transistor circuit, if the current gain is 100 and the collector current is 10 mA, the

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What are the majority current carriers in a PNP transistor?

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Is the base region much thinner or much wider than the collector and the emitter regions?

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Description : In the illustrated circuit, the amplifier is connected in what basic configuration? EL-0022 A. common base B. reverse bias, negative feedback C. common emitter D. common collector

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In the illustrated circuit, the amplifier is connected in what basic configuration? EL-0045 A. common emitter B. common collector C. darlington paired, capacitor coupled D. common base

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The device in figure 'B' shown in the illustration will conduct when the ____________. EL-0067 A. base-emitter is forward biased and the collector-base is reverse biased B. anode-cathode is forward biased and the cathode-gate is forward biased C. source-gate is forward biased and the gate-drain is reversed biased D. terminal 1-2 is forward biased and the emitter-terminal 1 is reverse biased

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The leads of the device in figure 'A' shown in the illustration are named the _______________. EL-0065 A. source, gate and drain B. emitter, base and collector C. emitter, base 1 and base 2 D. anode, cathode and gate

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In transistor, the base region is of the order of _______ (a) 10-5 m (b) 10-2 m (c) 10-8 m (d) 10-6 m

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Which breakdown theory explains the action that takes place in a heavily doped PN-junction with a reverse bias of less than 5 volts?

Description : Which breakdown theory explains the action that takes place in a heavily doped PN-junction with a reverse bias of less than 5 volts?

Last Answer : Zener effect.

A power diode has lightly doped n type substrate sandwiched between heavily doped p and n regions

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In a P-N diode, assume that P-side is lightly doped and N-side is heavily doped. Based on this

Description : In a P-N diode, assume that P-side is lightly doped and N-side is heavily doped. Based on this information, which of the following statement is true ? (A) Depletion region is more extended in ... (C) Depletion region would be equal on both sides (D) Not enough information provided to give answer

Last Answer : In a P-N diode, assume that P-side is lightly doped and N-side is heavily doped. Based on this information, which of the following statement is true ? (A) Depletion region is more extended ... (C) Depletion region would be equal on both sides (D) Not enough information provided to give answer

why is zener diode heavily doped?

Last Answer : PN junction of zener diode is heavily doped than ordinary diode. For the occurrence of Zener effect the zener diode is heavily doped. If the zener diode is not heavily doped then Zener effect ... breakdown voltage is sharp. If the diode is lightly doped the diode will have higher breakdown voltage.

To properly bias an NPN transistor, what polarity voltage is applied to the collector, and what is its relationship to the base voltage?

Description : To properly bias an NPN transistor, what polarity voltage is applied to the collector, and what is its relationship to the base voltage?

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A transistor has a typical value of β = 200 , If the collector current is 15 mA, then base current will be

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Last Answer : A transistor has a typical value of β = 200 , If the collector current is 15 mA, then base current will be 0.075 mA

Minority carriers in N-type are a) Holes b) Electrons c) Neutrons d) Protons

Description : Minority carriers in N-type are a) Holes b) Electrons c) Neutrons d) Protons

Last Answer : a) Holes

What causes the change in collector current in an emitter injection modulator?

Description : What causes the change in collector current in an emitter injection modulator?

Last Answer : Gain is varied by changing the voltage on the emitter.

The reverse current through semiconductor diode is due to (a) Minority carrier (b) majority carrier (c) electrons (d) holes

Description : The reverse current through semiconductor diode is due to (a) Minority carrier (b) majority carrier (c) electrons (d) holes

Last Answer : (a) Minority carrier

Which is the most important building block of electronic devices? (a) Diode (b) p-n junction (c) transistor (d) rectifier

Description : Which is the most important building block of electronic devices? (a) Diode (b) p-n junction (c) transistor (d) rectifier

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Which junction of the transistor in the common-emitter detector detects the modulation envelope?

Description : Which junction of the transistor in the common-emitter detector detects the modulation envelope?

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When an NPN transistor is properly biased then most of the electrons from the emitter

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Last Answer : a