Description : For the active mode BJT operation (A) Emitter Base Junction is Forward Biased and Collector Base Junction is Forward Biased (B) Emitter Base Junction is Reverse Biased and Collector Base Junction ... Biased (D) Emitter Base Junction is Reverse Biased and Collector Base Junction is Forward Biased
Last Answer : For the active mode BJT operation Emitter Base Junction is Forward Biased and Collector Base Junction is Reverse Biased.
Description : A light emitting diode emits light only when (a) Reversed biased (b) forward biased (c) unbiased (d) none
Last Answer : (b) forward biased
Description : The operation of a transistor requires ______ (a) Emitter is heated (b) base is heated (c) collector be heated (d) none of above
Last Answer : (d) none of above
Description : The device in figure 'B' shown in the illustration will conduct when the ____________. EL-0067 A. base-emitter is forward biased and the collector-base is reverse biased B. anode-cathode is forward ... is reversed biased D. terminal 1-2 is forward biased and the emitter-terminal 1 is reverse biased
Last Answer : Answer: B
Description : In the reverse biased p-n junction, the current is of the order of (a) Ampere (b) Milliampere (c) Microampere (d) Nano-ampere
Last Answer : (d) Nano-ampere
Description : If PN junction is forward biased its resistance is (a) Zero (b) Infinity (c) A few ohm (d) A few kilo ohms
Last Answer : c) A few ohm
Description : A part of transistor which is heavily doped to produce large number of majority carriers is (a) Emitter (b) Base (c) Collector (d) any of above
Last Answer : (a) Emitter
Description : Current gain of a transistor which has collector current of 10 mA and a base current of 40 micro Ampere is: (a) 25 (b) 250 (c) 2500 (d) 25000
Last Answer : b) 250
Description : In the transistor schematic symbol, the arrow ________ (a) located on emitter (b) located on base (c) located on collector (d) points from north to south
Last Answer : a) located on emitter
Description : In n-p-n transistor, p works as ________ (a) Collector (b) emitter (c) base (d) any of above
Last Answer : c) base
Description : The central region of transistor is called (a) Base (b) emitter (c) collector (d) neutral
Last Answer : (b) emitter
Description : Depletion region of a junction is formed _________ (a) during the manufacturing process (b) under forward bias (c) under reverse bias (d) when temperature varies
Last Answer : (a) during the manufacturing process
Description : P-n junction when reversed biased acts as a (a) Capacitor (b) inductor (c) on switch (d) off switch
Last Answer : d) off switch
Description : Which of the following actions can be carried out in order to prevent thermal runaway in a transistor? A. Increase the current through the collector-base junction. B. Install a heat sink. ... point to increase collector current. D. Increase the potential difference between the emitter and the base.
Description : In p-n-p transistor, collector current is (a) Equal to emitter current (b) slightly less than emitter current (c) greater than emitter current (d) any of above
Last Answer : (c) greater than emitter current
Description : Which is the most important building block of electronic devices? (a) Diode (b) p-n junction (c) transistor (d) rectifier
Last Answer : b) p-n junction
Description : In the illustration, the large battery and R(L) are in the circuit to ________. EL-0022 A. forward bias the emitter-base B. reverse bias the emitter-base C. forward bias the emitter/collector D. reverse bias the emitter/collector
Last Answer : Answer: D
Description : On increasing the reverse bias to a large value in a p-n junction diode current (a) Increases slowly (b) Remains fixed (c) Suddenly increases (d) Decreases slowly
Last Answer : (c) Suddenly increases
Description : In a reverse biased PN-junction, which current carriers cause leakage current?
Last Answer : The minority carriers
Description : The capacitance of reverse biased P-N junction 1. Decreases with increasing the reverse bias 2. Increases with increasing the reverse bias 3. Depends only on reverse saturation current 4. Makes the P-N junction more effective at high frequencies
Last Answer : The capacitance of reverse biased P-N junction Decreases with increasing the reverse bias
Description : In a junction transistor, the doping level of collector region is: (1) Higher than emitter region (2) Lower than base region (3) Is higher than base region but lower than emitter region (4) Independent of the doping of base and emitter regions.
Last Answer : In a junction transistor, the doping level of collector region is: Is higher than base region but lower than emitter region.
Description : When is a p-n junction said to be forward biased or what is meant by forward biasing of p-n junction? How does it affect resistance?
Last Answer : When the positive terminal of a cell is connected to p-side and negative terminal to the n-side of a p-n junction then it is said to be forward biased. It offers low resistance.
Description : When a PN junction is forward biased, what happens to the depletion region?
Last Answer : The depletion region decreases.
Description : Describe the working of PN junction diode with neat sketch under forward biased condition.
Last Answer : If the p-region (anode) is connected to the positive terminal of the external DC source and nside (cathode) is connected to the negative terminal of the DC source then the biasing ... The large number of majority carriers crossing the junction constitutes a current called as the forward current.
Description : When a P - N junction is forward biased 1.only electrons in N-region are injected into P-region 2.only holes in P-region are injected into N-region 3.majority carriers in each region are injected into the other region 4.minority current is reduced to zero
Last Answer : When a P - N junction is forward biased majority carriers in each region are injected into the other region
Description : A forward-biased PN-junction, (A) results in increase in diffusion current (B) results in increase in drift current (C) results in decrease in drift current (D) results in decrease in diffusion current
Last Answer : A forward-biased PN-junction, results in increase in diffusion current
Description : Under ideal conditions, the collector current is (a) Equal to base current (b) Nearly equal to emitter current (c) Less than base current (d) always zero
Last Answer : (b) Nearly equal to emitter current
Description : Process of conversion low voltage to high voltage is called _______ (a) Rectification (b)forward bias (c) reverse bias (d) amplification
Last Answer : (d) amplification
Description : In a transistor, the conventional current flows from base to emitter. The transistor is (a) NPN (b) PNP (c) FET (d) None of these
Last Answer : (a) NPN
Description : In transistor, the base region is of the order of _______ (a) 10-5 m (b) 10-2 m (c) 10-8 m (d) 10-6 m
Last Answer : d) 10-6 m
Description : A device used to avoid the relay destroying the op-amp is A. diode B. LED C. reverse bias diode D. forward biased diode
Last Answer : reverse bias diode
Description : When are opinions biased and when are they unbiased?
Last Answer : There is no such thing as unbiased. @mazingerz88: Is there a news channel or internet based company out there that delivers only straight news? What would (or could) that even mean. Every piece of info ... . The concept of unbiased news doesn't make very much sense. It's also not even desirable.
Description : You are performing an out-of-circuit test of the semi-conductor shown in the illustration. Using an ohmmeter on 'low power' position and with leads properly installed, which of the listed results would indicate a good ... lead on 'A' and red lead on 'C'; and a high reading with the leads reversed.
Last Answer : Answer: C
Description : As shown in the illustration, which of the elements listed does the line 'B' represent in the basic schematic symbol of a PNP transistor? EL-0068 A. Base B. Emitter C. Cathode D. Collector
Description : To properly bias an NPN transistor, what polarity voltage is applied to the collector, and what is its relationship to the base voltage?
Last Answer : Positive, more positive.
Description : The common-emitter transistor circuit can amplify a small current signal because a small change in the signal current produces one of the following. Does the change in signal produce a large change in the: w) emitter-base voltage x) base current y) collector current z) collector voltage
Last Answer : ANSWER: Y -- COLLECTOR CURRENT
Description : What are the three elements of a bipolar transistor? Are they the: w) grid, plate, cathode x) suppressor, deflector, target y) energizer, controller, terminus z) emitter, base, collector
Last Answer : ANSWER: Z -- EMITTER, BASE, COLLECTOR
Description : A transistor has a typical value of β = 200 , If the collector current is 15 mA, then base current will be
Last Answer : A transistor has a typical value of β = 200 , If the collector current is 15 mA, then base current will be 0.075 mA
Description : Junction breakdown occurs: a) With forward bias b) With reverse bias c) Under high temperature condition d) Because of excess heating of the diode
Last Answer : Ans: B
Description : Define i)P-N junction diode ii) Depletion layer iii)Forward bias iv)Reverse bias of P-N junction diode
Last Answer : i)P-N junction diode: It is a semiconductor device in which half of its region is P-type and other half is N-type. ii) Depletion layer: The region where free electrons and free holes are absent ... and negative terminal is connected to p-side of p-n junction diode, it is said to be reverse bias.
Description : In the illustrated amplifier, the base of the transistor is what type of material? EL-0022 A. N type B. P type C. metal oxide insulator D. alloy junction material
Last Answer : Answer: A
Description : In the illustrated circuit, the amplifier is connected in what basic configuration? EL-0022 A. common base B. reverse bias, negative feedback C. common emitter D. common collector
Description : Explain working of n-p-n transistor in unbiased condition.
Last Answer : Construction of NPN transistor: For an unbiased transistor no external power supplies are connected to it. Base is sandwiched between collector & emitter terminal. It is thin & lightly doped ... providing external power supply to transistor & this process is known as Biasing.
Description : The emitter of a transistor is doped the heaviest because it: (a) Acts as a supplier of charge carriers (b) Dissipates maximum power c) has a large resistance (d) has a small resistance
Last Answer : (a) Acts as a supplier of charge carriers
Description : When is a p-n junction said to be biased?
Last Answer : When an external source of e.m.f is connected to a p-n junction, it is said to be biased.
Description : Photodiodes used as fiber optic directors are a. Unbiased to generate a voltage same as a solar cell b. Forward bias c. Reversed bias d. Thermoelectrically cooled
Last Answer : c. Reversed bias
Description : Photodiodes used as fiber optic directors are ∙ a. Unbiased to generate a voltage same as a solar cell ∙ b. Forward bias ∙ c. Reversed bias ∙ d. Thermoelectrically cooled
Last Answer : ∙ c. Reversed bias
Description : What is meant by saying at what current is transistor biased?
Last Answer : Ans-Bias current of a transistor is the preset DC current when no input voltage signal is applied to it.
Description : When an NPN transistor is properly biased then most of the electrons from the emitter (A) recombine with holes in the base (B) recombine in the emitter itself (C) pass through the base to the collector (D) are stopped by the junction barrier
Last Answer : a
Description : How do you test reverse power trip, high current trip, preferential trip?
Last Answer : Reverse power trip - refer answer for question 11. Also ask E/O. High current (over load trip) - Set your overload relay high current trip setting to say 75% of the rated current. Run the ... loads to overload the generator. Preferential trip will trip all the non-critical loads. Also ask E/O.