In a semiconductor, current conduction is due to ……..

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1 Answer

Answer :

In a semiconductor, current conduction is due to Holes and free electrons.

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Related questions

In case of semi-conductors, the ratio of conduction current to displacement current is:

Description :  In case of semi-conductors, the ratio of conduction current to displacement current is: A) more than 200 and less than 1000 B) less than 100 but greater than 1/100 C) less than 1/100 D) more than 1000

Last Answer : In case of semi-conductors, the ratio of conduction current to displacement current is:  less than 100 but greater than 1/100

In a single crystal of an intrinsic semiconductor, the number of free carriers at the Fermi level at room

Description : In a single crystal of an intrinsic semiconductor, the number of free carriers at the Fermi level at room temperature is: A) Half the total number of electrons in the crystal B) Zero C) Half the number of atoms in the crystal D) Half the number of free electrons in the crystal

Last Answer : In a single crystal of an intrinsic semiconductor, the number of free carriers at the Fermi level at room temperature is: Zero 

In an n-type semiconductor, as the donor concentration ND increases, the Fermi level EF:

Description : In an n-type semiconductor, as the donor concentration ND increases, the Fermi level EF: (1) Remains unaltered (2) Moves towards the conduction band (3) Move towards the center of forbidden energy gap (4) May or may not move depending on temperature 

Last Answer : In an n-type semiconductor, as the donor concentration ND increases, the Fermi level EF: Moves towards the conduction band

Impurity atoms to be added to pure silicon in order to make a p-type semiconductor belongs to

Description : Impurity atoms to be added to pure silicon in order to make a p-type semiconductor belongs to (a) Phosphorous (b) Boron (c) Antimony (d) Aluminium 

Last Answer : Boron  , a  group  three  element.

The advantage of a semiconductor strain gauge cover the wire round strain gauge is that

Description : The advantage of a semiconductor strain gauge cover the wire round strain gauge is that

Last Answer : The advantage of a semiconductor strain gauge cover the wire round strain gauge is that it is more sensitive

The semiconductor used for LEDs emitting in the visible range is

Description : The semiconductor used for LEDs emitting in the visible range is  (a) GaAs (b) GaAlAs (c) GalnAs (d) GaAsP

Last Answer : The semiconductor used for LEDs emitting in the visible range is GaAsP

The polar bonds existing in III-V compound semiconductor, may be considered as equivalent to

Description : The polar bonds existing in III-V compound semiconductor, may be considered as equivalent to  (a) 1 ionic bond and 3 covalent bonds (b) 1 ionic bond and 4 covalent bonds (c) 2 ionic bonds and 2 covalent bonds (d) 2 ionic bonds and 4 covalent bonds

Last Answer : The polar bonds existing in III-V compound semiconductor, may be considered as equivalent to 1 ionic bond and 3 covalent bonds

The material used for ‘doping’ to prepare N - type semiconductor is

Description : The material used for ‘doping’ to prepare N - type semiconductor is

Last Answer : The material used for ‘doping’ to prepare N - type semiconductor is Arsenic

While comparing doped semiconductor vs. un-doped semiconductor, which of the following

Description : While comparing doped semiconductor vs. un-doped semiconductor, which of the following statements is NOT true ? (A) Doped semiconductor has smaller band-gap compared to un-doped semiconductor (B) ... to un-doped semiconductor (D) Doped as well as un-doped semiconductor have equal bandwidth

Last Answer : While comparing doped semiconductor vs. un-doped semiconductor, which of the following statements is NOT true ? (A) Doped semiconductor has smaller band-gap compared to un-doped semiconductor (B) ... to un-doped semiconductor (D) Doped as well as un-doped semiconductor have equal bandwidth

To increase mobility of electron in a given piece of semiconductor

Description : To increase mobility of electron in a given piece of semiconductor (A) Increase overall size of the semiconductor (B) Increase length (C) Increase width (D) Small increase in temperature above room temperature value

Last Answer : To increase mobility of electron in a given piece of semiconductor Small increase in temperature above room temperature value

At absolute temperature, an intrinsic semiconductor has ……….

Last Answer : At absolute temperature, an intrinsic semiconductor has No holes or free electrons.

At room temperature, an intrinsic semiconductor has ……….

Last Answer : At room temperature, an intrinsic semiconductor has A few free electrons and holes.

In an intrinsic semiconductor, the number of free electrons ………

Last Answer :  In an intrinsic semiconductor, the number of free electrons Equals the number of holes.

When the temperature of an extrinsic semiconductor is increased, the pronounced effect is on……

Last Answer : When the temperature of an extrinsic semiconductor is increased, the pronounced effect is on Minority carriers.

As the doping to a pure semiconductor increases, the bulk resistance of the semiconductor ………..

Last Answer : As the doping to a pure semiconductor increases, the bulk resistance of the semiconductor Decreases.

The impurity level in an extrinsic semiconductor is about ….. of pure semiconductor.

Last Answer : The impurity level in an extrinsic semiconductor is about 1 atom for 108 atoms of pure semiconductor.

A hole in a semiconductor is defined as …………….

Last Answer : A hole in a semiconductor is defined as The incomplete part of an electron pair bond.

Addition of trivalent impurity to a semiconductor creates many ……..

Last Answer : Addition of trivalent impurity to a semiconductor creates many Holes.

An n-type semiconductor is ………

Last Answer : An n-type semiconductor is Electrically neutral.

Addition of pentavalent impurity to a semiconductor creates many ……..

Last Answer : Addition of pentavalent impurity to a semiconductor creates many Free electrons.

When a pentavalent impurity is added to a pure semiconductor, it becomes ………

Last Answer : When a pentavalent impurity is added to a pure semiconductor, it becomes n-type semiconductor.

The strength of a semiconductor crystal comes from ……..

Last Answer : The strength of a semiconductor crystal comes from Electron-pair bonds.

When a pure semiconductor is heated, its resistance …………..

Last Answer : When a pure semiconductor is heated, its resistance Goes down.

The most commonly used semiconductor is ………..

Last Answer : The most commonly used semiconductor is Silicon.

A semiconductor has ………… temperature coefficient of resistance.

Last Answer : A semiconductor has Negative temperature coefficient of resistance.

Conduction in which type of semiconductor material is similar to conduction in a copper wire?

Description : Conduction in which type of semiconductor material is similar to conduction in a copper wire?

Last Answer : N-type material.

What happens to the electrons of a gallium-arsenide semiconductor when they move from the normal low-energy conduction band to the high-energy conduction band?

Description : What happens to the electrons of a gallium-arsenide semiconductor when they move from the normal low-energy conduction band to the high-energy conduction band?

Last Answer : The electrons become immobile.

C and Si both have same lattice structure, having 4 bonding electrons in each. However, C is insulator where as Si is intrinsic semiconductor. This is because (1) The four bonding electrons in the case of C lie in the third orbit, whereas for Si they lie in the fourth orbit (2) In case of C the valance band is not completely filled at absolute zero temperature (3) In case of C the conduction band is partly filled even at absolute zero temperature (4) The four bonding electrons in the case of C lie in the second orbit, whereas in the case of Si they lie in the third

Description : C and Si both have same lattice structure, having 4 bonding electrons in each. However, C is insulator where as Si is intrinsic semiconductor. This is because (1) The four bonding electrons in the case of C ... the case of C lie in the second orbit, whereas in the case of Si they lie in the third

Last Answer : (4) The four bonding electrons in the case of C lie in the second orbit, whereas in the case of Si they lie in the third

The leakage current across a pn junction is due to …………..

Last Answer : The leakage current across a pn junction is due to Minority carriers.

The random motion of holes and free electrons due to thermal agitation is called ……….

Last Answer : The random motion of holes and free electrons due to thermal agitation is called Diffusion.

The leakage current in a pn junction is of the order of

Description : The leakage current in a pn junction is of the order of

Last Answer : The leakage current in a pn junction is of the order of µA.

The reverse current through semiconductor diode is due to (a) Minority carrier (b) majority carrier (c) electrons (d) holes

Description : The reverse current through semiconductor diode is due to (a) Minority carrier (b) majority carrier (c) electrons (d) holes

Last Answer : (a) Minority carrier

At room temperature the current in an intrinsic semiconductor is due to

Last Answer : At room temperature, the current in an intrinsic semiconductor is due to holes and electrons.

The charge build up in a capacitor is due to a) Conduction current density b) Displacement current density c) Polarisation d) Magnetization

Description : The charge build up in a capacitor is due to a) Conduction current density b) Displacement current density c) Polarisation d) Magnetization

Last Answer : b) Displacement current density

The charge build up in the capacitor is due to which quantity? a) Conduction current b) Displacement current c) Convection current d) Direct current

Description : The charge build up in the capacitor is due to which quantity? a) Conduction current b) Displacement current c) Convection current d) Direct current

Last Answer : d) Direct current

The current in a metal at any frequency is due to a) Conduction current b) Displacement current c) Both conduction and displacement current d) Neither conduction nor displacement current

Description : The current in a metal at any frequency is due to a) Conduction current b) Displacement current c) Both conduction and displacement current d) Neither conduction nor displacement current

Last Answer : a) Conduction current

The following property of semiconductors cannot be determined from Hall effect:

Description : The following property of semiconductors cannot be determined from Hall effect: (1) Semiconductor is n–type or p–type (2) The carrier concentration (3) The mobility of semiconductor (4) The atomic concentration of semiconductor

Last Answer : The following property of semiconductors cannot be determined from Hall effect: The atomic concentration of semiconductor

Pure silicon is

Description : Pure silicon is (a) a p-type semiconductor (b) an n-type semiconductor (c) an intrinsic semiconductor (d) an extrinsic semiconductor 

Last Answer : Pure  silicon  is  an  intrinsic  semiconductor because  its  own  electrons   are  responsible   for   conduction.

Gold is often diffused into silicon PN junction devices to

Description : Gold is often diffused into silicon PN junction devices to   (A) increase the recombination rate (B) reduce the recombination rate (C) make silicon a direct gap semiconductor (D) make silicon semi-metal

Last Answer : To  increase  the  combinational  rate  at  the  pn  junction

The Maximum spectral response of the germanium and silicon is in the

Description : The Maximum spectral response of the germanium and silicon is in the   (A) infrared region (B) ultraviolet region (C) visible region (D) x-ray region

Last Answer : The Maximum spectral response of the germanium and silicon is in the ultraviolet region

Silicon has a preference in IC technology because

Description : Silicon has a preference in IC technology because  (a) it is an indirect semiconductor (b) it is a covalent semiconductor (c) it is an elemental semiconductor (d) of the availability of nature oxide SiO

Last Answer : Silicon has a preference in IC technology because of the availability of nature oxide SiO

Most of the transistors are NPN type and not PNP type because

Description : Most of the transistors are NPN type and not PNP type because  1.NPN transistor gives large voltage gain 2.NPN transistors are more negative than PNP transistors 3.In NPN transistor, the current ... free electrons which are less mobiles than holes 4.We can have high conduction is NPN transistors 

Last Answer : Most of the transistors are NPN type and not PNP type because We can have high conduction is NPN transistors 

When reverse bias is applied to a junction diode, it

Description : When reverse bias is applied to a junction diode, it  1.increases the potential barrier 2.decreases the potential barrier 3.greatly increases the minority carrier current 4.greatly increases the majority carrier current 

Last Answer : When reverse bias is applied to a junction diode, it increases the potential barrier 

When a P - N junction is forward biased

Description : When a P - N junction is forward biased  1.only electrons in N-region are injected into P-region 2.only holes in P-region are injected into N-region 3.majority carriers in each region are injected into the other region 4.minority current is reduced to zero 

Last Answer : When a P - N junction is forward biased majority carriers in each region are injected into the other region 

In a P-N diode, assume that P-side is lightly doped and N-side is heavily doped. Based on this

Description : In a P-N diode, assume that P-side is lightly doped and N-side is heavily doped. Based on this information, which of the following statement is true ? (A) Depletion region is more extended in ... (C) Depletion region would be equal on both sides (D) Not enough information provided to give answer

Last Answer : In a P-N diode, assume that P-side is lightly doped and N-side is heavily doped. Based on this information, which of the following statement is true ? (A) Depletion region is more extended ... (C) Depletion region would be equal on both sides (D) Not enough information provided to give answer

Space charge region or depletion region in a P-N diode has

Description : Space charge region or depletion region in a P-N diode has (A) No charge (B) No fixed charge (C) No mobile charge (D) Both fixed and mobile charges

Last Answer : Space charge region or depletion region in a P-N diode has No mobile charge

At room temperature in an intrinsic piece of Si there could be

Description : At room temperature in an intrinsic piece of Si there could be (A) No free carriers (B) Some electrons but no holes (C) Some holes but no electrons (D) Equal number of holes and electrons

Last Answer : No  free   carriers.

Which of the following serves as donor impurity in Silicon?

Description : Which of the following serves as donor impurity in Silicon?  (A) Boron (B) Indium (C) Germanium (D) Antimony 

Last Answer : Which of the following will serve as a donor impurity in silicon?   (A) Boron (B) Indium (C) Germanium (D) Antimony

At room temperature, an intrinsic silicon crystal acts approximately as ……

Last Answer : At room temperature, an intrinsic silicon crystal acts approximately as An insulator.