Addition of pentavalent impurity to a semiconductor creates many ……..

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Addition of pentavalent impurity to a semiconductor creates many Free electrons.

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When a pentavalent impurity is added to a pure semiconductor, it becomes ………

Last Answer : When a pentavalent impurity is added to a pure semiconductor, it becomes n-type semiconductor.

Addition of trivalent impurity to a semiconductor creates many ……..

Last Answer : Addition of trivalent impurity to a semiconductor creates many Holes.

A pentavalent impurity has ………. Valence electrons

Last Answer : A pentavalent impurity has 5 Valence electrons.

Addition of trivalent impurity to a semiconductor creates many (A) holes. (B) free electrons. (C) valance electrons. (D) bound electrons.

Description : Addition of trivalent impurity to a semiconductor creates many (A) holes. (B) free electrons. (C) valance electrons. (D) bound electrons.

Last Answer : (B) free electrons.

Impurity atoms to be added to pure silicon in order to make a p-type semiconductor belongs to

Description : Impurity atoms to be added to pure silicon in order to make a p-type semiconductor belongs to (a) Phosphorous (b) Boron (c) Antimony (d) Aluminium 

Last Answer : Boron  , a  group  three  element.

The impurity level in an extrinsic semiconductor is about ….. of pure semiconductor.

Last Answer : The impurity level in an extrinsic semiconductor is about 1 atom for 108 atoms of pure semiconductor.

In order to obtain p-type germanium it should be doped with a (A) Trivalent impurity. (B) Tetravalent impurity. (C) Pentavalent impurity. (D) Any of the above will do.

Description : In order to obtain p-type germanium it should be doped with a (A) Trivalent impurity. (B) Tetravalent impurity. (C) Pentavalent impurity. (D) Any of the above will do.

Last Answer : (A) Trivalent impurity.

In n type semi conductor added impurity is (A) pentavalent. (B) divalent. (C) tetravalent. (D) trivalent.

Description : In n type semi conductor added impurity is (A) pentavalent. (B) divalent. (C) tetravalent. (D) trivalent.

Last Answer : (A) pentavalent.

A semiconductor formed by addition of trivalent impurity is : a) P–Type b) N–Type c) Q–type d) M–Type

Description : A semiconductor formed by addition of trivalent impurity is : a) P–Type b) N–Type c) Q–type d) M–Type

Last Answer : d) M–Type

The process of addition of impurity in pure semiconductor is : a) Doping b) Radiating c) Mixing d) Insulating

Description : The process of addition of impurity in pure semiconductor is : a) Doping b) Radiating c) Mixing d) Insulating

Last Answer : d) Insulating

Semiconductor germanium and silicon are (a) Pentavalent (b) trivalent (c) divalent (d) tetravalent

Description : Semiconductor germanium and silicon are (a) Pentavalent (b) trivalent (c) divalent (d) tetravalent

Last Answer : (d) tetravalent

Which of the following serves as donor impurity in Silicon?

Description : Which of the following serves as donor impurity in Silicon?  (A) Boron (B) Indium (C) Germanium (D) Antimony 

Last Answer : Which of the following will serve as a donor impurity in silicon?   (A) Boron (B) Indium (C) Germanium (D) Antimony

A trivalent impurity has ….. valence electrons

Last Answer : A trivalent impurity has 3 valence electrons.

When a semiconductor is doped with a P-type impurity, each impurity atom will (A) acquire negative charge. (B) acquire positive charge. (C) remain electrically neutral. (D) give away one electron.

Description : When a semiconductor is doped with a P-type impurity, each impurity atom will (A) acquire negative charge. (B) acquire positive charge. (C) remain electrically neutral. (D) give away one electron.

Last Answer : (A) acquire negative charge.

Explain types of impurity added in a semiconductor with one example each.

Description : Explain types of impurity added in a semiconductor with one example each.

Last Answer : There are two types of impurities added in a intrinsic semiconductor which are as follows 1.Donor Impurity 2.Acceptor Impurity 1.Donor Impurity - These are pentavalent which means they have five ... called as Acceptor doping. It is used to manufacture P-type semiconductor Eg:Boron,Gallium,Indium

In a single crystal of an intrinsic semiconductor, the number of free carriers at the Fermi level at room

Description : In a single crystal of an intrinsic semiconductor, the number of free carriers at the Fermi level at room temperature is: A) Half the total number of electrons in the crystal B) Zero C) Half the number of atoms in the crystal D) Half the number of free electrons in the crystal

Last Answer : In a single crystal of an intrinsic semiconductor, the number of free carriers at the Fermi level at room temperature is: Zero 

In an n-type semiconductor, as the donor concentration ND increases, the Fermi level EF:

Description : In an n-type semiconductor, as the donor concentration ND increases, the Fermi level EF: (1) Remains unaltered (2) Moves towards the conduction band (3) Move towards the center of forbidden energy gap (4) May or may not move depending on temperature 

Last Answer : In an n-type semiconductor, as the donor concentration ND increases, the Fermi level EF: Moves towards the conduction band

The advantage of a semiconductor strain gauge cover the wire round strain gauge is that

Description : The advantage of a semiconductor strain gauge cover the wire round strain gauge is that

Last Answer : The advantage of a semiconductor strain gauge cover the wire round strain gauge is that it is more sensitive

The semiconductor used for LEDs emitting in the visible range is

Description : The semiconductor used for LEDs emitting in the visible range is  (a) GaAs (b) GaAlAs (c) GalnAs (d) GaAsP

Last Answer : The semiconductor used for LEDs emitting in the visible range is GaAsP

The polar bonds existing in III-V compound semiconductor, may be considered as equivalent to

Description : The polar bonds existing in III-V compound semiconductor, may be considered as equivalent to  (a) 1 ionic bond and 3 covalent bonds (b) 1 ionic bond and 4 covalent bonds (c) 2 ionic bonds and 2 covalent bonds (d) 2 ionic bonds and 4 covalent bonds

Last Answer : The polar bonds existing in III-V compound semiconductor, may be considered as equivalent to 1 ionic bond and 3 covalent bonds

The material used for ‘doping’ to prepare N - type semiconductor is

Description : The material used for ‘doping’ to prepare N - type semiconductor is

Last Answer : The material used for ‘doping’ to prepare N - type semiconductor is Arsenic

While comparing doped semiconductor vs. un-doped semiconductor, which of the following

Description : While comparing doped semiconductor vs. un-doped semiconductor, which of the following statements is NOT true ? (A) Doped semiconductor has smaller band-gap compared to un-doped semiconductor (B) ... to un-doped semiconductor (D) Doped as well as un-doped semiconductor have equal bandwidth

Last Answer : While comparing doped semiconductor vs. un-doped semiconductor, which of the following statements is NOT true ? (A) Doped semiconductor has smaller band-gap compared to un-doped semiconductor (B) ... to un-doped semiconductor (D) Doped as well as un-doped semiconductor have equal bandwidth

To increase mobility of electron in a given piece of semiconductor

Description : To increase mobility of electron in a given piece of semiconductor (A) Increase overall size of the semiconductor (B) Increase length (C) Increase width (D) Small increase in temperature above room temperature value

Last Answer : To increase mobility of electron in a given piece of semiconductor Small increase in temperature above room temperature value

At absolute temperature, an intrinsic semiconductor has ……….

Last Answer : At absolute temperature, an intrinsic semiconductor has No holes or free electrons.

At room temperature, an intrinsic semiconductor has ……….

Last Answer : At room temperature, an intrinsic semiconductor has A few free electrons and holes.

In an intrinsic semiconductor, the number of free electrons ………

Last Answer :  In an intrinsic semiconductor, the number of free electrons Equals the number of holes.

When the temperature of an extrinsic semiconductor is increased, the pronounced effect is on……

Last Answer : When the temperature of an extrinsic semiconductor is increased, the pronounced effect is on Minority carriers.

In a semiconductor, current conduction is due to ……..

Last Answer : In a semiconductor, current conduction is due to Holes and free electrons.

As the doping to a pure semiconductor increases, the bulk resistance of the semiconductor ………..

Last Answer : As the doping to a pure semiconductor increases, the bulk resistance of the semiconductor Decreases.

A hole in a semiconductor is defined as …………….

Last Answer : A hole in a semiconductor is defined as The incomplete part of an electron pair bond.

An n-type semiconductor is ………

Last Answer : An n-type semiconductor is Electrically neutral.

The strength of a semiconductor crystal comes from ……..

Last Answer : The strength of a semiconductor crystal comes from Electron-pair bonds.

When a pure semiconductor is heated, its resistance …………..

Last Answer : When a pure semiconductor is heated, its resistance Goes down.

The most commonly used semiconductor is ………..

Last Answer : The most commonly used semiconductor is Silicon.

A semiconductor has ………… temperature coefficient of resistance.

Last Answer : A semiconductor has Negative temperature coefficient of resistance.

What is the Different between a pentavalent atom and a trivalent atom?

Description : What is the Different between a pentavalent atom and a trivalent atom?

Last Answer : Feel Free to Answer

Give two examples of trivalent and pentavalent impurities.

Description : Give two examples of trivalent and pentavalent impurities.

Last Answer : Trivalent Impurities:  1) Gallium (Ga) 2) Indium (In) 3) Aluminium (Al) 4) Boron (B)  Pentavalent Impurities:  1) Phosphorus (P) 2) Antimony (Sb) 3) Arsenic (As) 4) Bismuth (Bi)

Addition of suitable impurities into semiconductor, is called – (1) Doping (2) Mixing (3) Forming (4) Diluting

Description : Addition of suitable impurities into semiconductor, is called – (1) Doping (2) Mixing (3) Forming (4) Diluting

Last Answer : (1) Doping Explanation: In semiconductor production, doping refers to the introduction of impurities into an extremely pure intrinsic semiconductor for the purpose of modulating its electrical properties. ... type of semiconductor and the properties that it needs to have for its intended purpose.

Addition of suitable impurities into semiconductor, is called (1) Doping (2) Mixing (3) Forming (4) Diluting

Description : Addition of suitable impurities into semiconductor, is called (1) Doping (2) Mixing (3) Forming (4) Diluting

Last Answer : Doping

After taking a bath, there is a little impurity on the body .

Last Answer : Yes. লেই Washing the unclean place will make you clean

When the sample of copper with the zinc impurity is to be purified by electrolysis, the appropriate electrodes are

Description : When the sample of copper with the zinc impurity is to be purified by electrolysis, the appropriate electrodes are

Last Answer : When the sample of copper with the zinc impurity is to be purified by electrolysis, the appropriate electrodes ... "),("Pure Zinc","ImPure Zinc"):}`

Which one of the following elements is present as a major impurity in pig iron ?

Description : Which one of the following elements is present as a major impurity in pig iron ?

Last Answer : Which one of the following elements is present as a major impurity in pig iron ? A. graphite B. oxygen C. sulphur D. silicon

Silver is refined by cupellation process, the process removes the impurity of:

Description : Silver is refined by cupellation process, the process removes the impurity of:

Last Answer : Silver is refined by cupellation process, the process removes the impurity of: A. Cu B. Au C. Pb D. Pt

The chief impurity present in bauxite is

Description : The chief impurity present in bauxite is

Last Answer : The chief impurity present in bauxite is A. `SiO_(2)` B. `Fe_(2)O_(3)` C. `K_(2)SO_(4)` D. NaF

Silver containing lead as an impurity is not purified by

Description : Silver containing lead as an impurity is not purified by

Last Answer : Silver containing lead as an impurity is not purified by A. Poling B. Distillation C. cupellation D. Levigation

When the sample of Cu with Zn as impurity is to be purified by electrolysis, the appropriate electrodes are :

Description : When the sample of Cu with Zn as impurity is to be purified by electrolysis, the appropriate electrodes are :

Last Answer : When the sample of Cu with Zn as impurity is to be purified by electrolysis, the appropriate electrodes are ... 4)","Impure zinc","Impure sample"):}`

When copper pyrites is roasted in excess of air, a mixture of `CuO + FeO` is formed. `FeO` is present as impurity. This can be removed as slag during

Description : When copper pyrites is roasted in excess of air, a mixture of `CuO + FeO` is formed. `FeO` is present as impurity. This can be removed as slag during

Last Answer : When copper pyrites is roasted in excess of air, a mixture of `CuO + FeO` is formed. `FeO` is present ... a basic flux D. CaO, which is a basic flux

Cast iron contains phosphorus as impurity. In Bessemerisation of this cast iron the slag formed is

Description : Cast iron contains phosphorus as impurity. In Bessemerisation of this cast iron the slag formed is

Last Answer : Cast iron contains phosphorus as impurity. In Bessemerisation of this cast iron the slag formed is A. `FePO_(4)` B. ` ... (4)` D. `Zn_(3)(PO_(4))_(2)`

If the impurity in a metal has a greater affinity for oxygen and is more easily oxidised than the metal, then the purification of metal may be carried

Description : If the impurity in a metal has a greater affinity for oxygen and is more easily oxidised than the metal, then the purification of metal may be carried

Last Answer : If the impurity in a metal has a greater affinity for oxygen and is more easily oxidised than ... B. electrorefining C. Zone refining D. POILING