1 Answer

Answer :

An n-type semiconductor is Electrically neutral.

Related questions

Description : In an n-type semiconductor, as the donor concentration ND increases, the Fermi level EF: (1) Remains unaltered (2) Moves towards the conduction band (3) Move towards the center of forbidden energy gap (4) May or may not move depending on temperature 

Last Answer : In an n-type semiconductor, as the donor concentration ND increases, the Fermi level EF: Moves towards the conduction band

Description : The material used for ‘doping’ to prepare N - type semiconductor is

Last Answer : The material used for ‘doping’ to prepare N - type semiconductor is Arsenic

Description : Impurity atoms to be added to pure silicon in order to make a p-type semiconductor belongs to (a) Phosphorous (b) Boron (c) Antimony (d) Aluminium 

Last Answer : Boron  , a  group  three  element.

Description : In a single crystal of an intrinsic semiconductor, the number of free carriers at the Fermi level at room temperature is: A) Half the total number of electrons in the crystal B) Zero C) Half the number of atoms in the crystal D) Half the number of free electrons in the crystal

Last Answer : In a single crystal of an intrinsic semiconductor, the number of free carriers at the Fermi level at room temperature is: Zero 

Description : The advantage of a semiconductor strain gauge cover the wire round strain gauge is that

Last Answer : The advantage of a semiconductor strain gauge cover the wire round strain gauge is that it is more sensitive

Description : The semiconductor used for LEDs emitting in the visible range is  (a) GaAs (b) GaAlAs (c) GalnAs (d) GaAsP

Last Answer : The semiconductor used for LEDs emitting in the visible range is GaAsP

Description : The polar bonds existing in III-V compound semiconductor, may be considered as equivalent to  (a) 1 ionic bond and 3 covalent bonds (b) 1 ionic bond and 4 covalent bonds (c) 2 ionic bonds and 2 covalent bonds (d) 2 ionic bonds and 4 covalent bonds

Last Answer : The polar bonds existing in III-V compound semiconductor, may be considered as equivalent to 1 ionic bond and 3 covalent bonds

Description : While comparing doped semiconductor vs. un-doped semiconductor, which of the following statements is NOT true ? (A) Doped semiconductor has smaller band-gap compared to un-doped semiconductor (B) ... to un-doped semiconductor (D) Doped as well as un-doped semiconductor have equal bandwidth

Last Answer : While comparing doped semiconductor vs. un-doped semiconductor, which of the following statements is NOT true ? (A) Doped semiconductor has smaller band-gap compared to un-doped semiconductor (B) ... to un-doped semiconductor (D) Doped as well as un-doped semiconductor have equal bandwidth

Description : To increase mobility of electron in a given piece of semiconductor (A) Increase overall size of the semiconductor (B) Increase length (C) Increase width (D) Small increase in temperature above room temperature value

Last Answer : To increase mobility of electron in a given piece of semiconductor Small increase in temperature above room temperature value

Last Answer : At absolute temperature, an intrinsic semiconductor has No holes or free electrons.

Last Answer : At room temperature, an intrinsic semiconductor has A few free electrons and holes.

Last Answer :  In an intrinsic semiconductor, the number of free electrons Equals the number of holes.

Last Answer : When the temperature of an extrinsic semiconductor is increased, the pronounced effect is on Minority carriers.

Last Answer : In a semiconductor, current conduction is due to Holes and free electrons.

Last Answer : As the doping to a pure semiconductor increases, the bulk resistance of the semiconductor Decreases.

Last Answer : The impurity level in an extrinsic semiconductor is about 1 atom for 108 atoms of pure semiconductor.

Last Answer : A hole in a semiconductor is defined as The incomplete part of an electron pair bond.

Last Answer : Addition of trivalent impurity to a semiconductor creates many Holes.

Last Answer : Addition of pentavalent impurity to a semiconductor creates many Free electrons.

Last Answer : When a pentavalent impurity is added to a pure semiconductor, it becomes n-type semiconductor.

Last Answer : The strength of a semiconductor crystal comes from Electron-pair bonds.

Last Answer : When a pure semiconductor is heated, its resistance Goes down.

Last Answer : The most commonly used semiconductor is Silicon.

Last Answer : A semiconductor has Negative temperature coefficient of resistance.

Description : When a P - N junction is forward biased  1.only electrons in N-region are injected into P-region 2.only holes in P-region are injected into N-region 3.majority carriers in each region are injected into the other region 4.minority current is reduced to zero 

Last Answer : When a P - N junction is forward biased majority carriers in each region are injected into the other region 

Description : In a P-N diode, assume that P-side is lightly doped and N-side is heavily doped. Based on this information, which of the following statement is true ? (A) Depletion region is more extended in ... (C) Depletion region would be equal on both sides (D) Not enough information provided to give answer

Last Answer : In a P-N diode, assume that P-side is lightly doped and N-side is heavily doped. Based on this information, which of the following statement is true ? (A) Depletion region is more extended ... (C) Depletion region would be equal on both sides (D) Not enough information provided to give answer

Description : Space charge region or depletion region in a P-N diode has (A) No charge (B) No fixed charge (C) No mobile charge (D) Both fixed and mobile charges

Last Answer : Space charge region or depletion region in a P-N diode has No mobile charge

Description : What is n- type semiconductor ?

Last Answer : When a semiconductor substance is mixed with a five-component element as an adulterant or a waste, the negative charge carrier electron in them acts as the maximum charge carrier. Such semiconductors are called n- type semiconductors.

Description : Explain the formation of an n-type semiconductor.

Last Answer : When a small amount of a penta valant impurity like antimony, arsenic or phosphorous is added to a tetra valant element like Silicon or Germanium, four out of five electrons of each impurity ... becomes an n-type semiconductor. In an n-type semiconductor the majority charge carriers are electrons.

Description : Classify each of the following as being either a p-type or an n-type Semiconductor.

Last Answer : (a) Ge dopped with In----p-type. (b) B dopped with Si----n-type.

Description : What type of PN diode is formed by using a fine metal wire and a section of N-type semiconductor material?

Last Answer : Point-contact.

Description : What are the majority carriers in an N-type semiconductor?

Last Answer : Electrons.

Description : In the N-type semiconductor the charge carries are a) Holes b) Neutrons c) Protons d) Electrons

Last Answer : d) Electrons

Description : A semiconductor formed by addition of trivalent impurity is : a) P–Type b) N–Type c) Q–type d) M–Type

Last Answer : d) M–Type

Description : Hall effect may be used for which of the following? (A) determining whether the semiconductor is p or n type. (B) determining the carrier concentration. (C) calculating the mobility. (D) All the above.

Last Answer : (D) All the above. Ans: D Determining whether the semiconductor is p or n type, determining the carrier concentration, calculating the mobility

Description : n-type semiconductor is an example of (A) extrinsic semiconductor. (B) intrinsic semiconductor. (C) super conductor. (D) insulators..

Last Answer : (A) extrinsic semiconductor.

Description : State the impurities for obtaining p-type and n-type semiconductor from intrinsic semi conductor. 

Last Answer : Crystals of Silicon and Germanium are doped using two types of dopants:  1. The impurities for obtaining n-type semiconductor from intrinsic semiconductor are pentavalent impurity; like Arsenic (As), Antimony ... semiconductor are trivalent impurity; like Indium (In), Boron (B), Aluminum (Al), etc.

Description : Distinguish between P-type and N-type semiconductor. 

Last Answer : N- type Semiconductor P- type Semiconductor When small amount of pentavalent impurity is added to a pure semiconductor is called N-type semiconductor When small amount of trivalent impurity ... of electrons The electrons are majority carriers The holes are majority carriers

Description : n-type semiconductor can be made by adding ____ to intrinsic semiconductor (A) Boron (B) Arsenic (C) Carbon (D) Germanium

Last Answer : n-type semiconductor can be made by adding Arsenic to intrinsic semiconductor

Description : Majority carriers in n type semiconductor are_______. A. Electrons B. Holes C. Both D. None

Last Answer : Majority carriers in n type semiconductor are Electrons.

Description : Most of the transistors are NPN type and not PNP type because  1.NPN transistor gives large voltage gain 2.NPN transistors are more negative than PNP transistors 3.In NPN transistor, the current ... free electrons which are less mobiles than holes 4.We can have high conduction is NPN transistors 

Last Answer : Most of the transistors are NPN type and not PNP type because We can have high conduction is NPN transistors 

Description : What does the letter "N" indicate in the semiconductor identification system?

Last Answer : A semiconductor.

Description : NMOS stands for: a. N-channel metal-oxide-semiconductor b. P-channel metal-oxide-semiconductor c. N-channel memory-oxide-semiconductor d. All the above

Last Answer : a. N-channel metal-oxide-semiconductor

Description : In a semiconductor diode, p-side is earthed and to n-side is applied a potential of -2 volt; the diode shall (a) Conduct (b) Not conduct (c) Conduct partially (d) Break down

Last Answer : a) Conduct

Description : A semiconductor device made up of a single p-n Junction is called a: w) transistor x) diode y) Fet z) integrated circuit

Last Answer : ANSWER: X -- DIODE

Description :  In case of semi-conductors, the ratio of conduction current to displacement current is: A) more than 200 and less than 1000 B) less than 100 but greater than 1/100 C) less than 1/100 D) more than 1000

Last Answer : In case of semi-conductors, the ratio of conduction current to displacement current is:  less than 100 but greater than 1/100

Description : The following property of semiconductors cannot be determined from Hall effect: (1) Semiconductor is n–type or p–type (2) The carrier concentration (3) The mobility of semiconductor (4) The atomic concentration of semiconductor

Last Answer : The following property of semiconductors cannot be determined from Hall effect: The atomic concentration of semiconductor

Description : Pure silicon is (a) a p-type semiconductor (b) an n-type semiconductor (c) an intrinsic semiconductor (d) an extrinsic semiconductor 

Last Answer : Pure  silicon  is  an  intrinsic  semiconductor because  its  own  electrons   are  responsible   for   conduction.

Description : Gold is often diffused into silicon PN junction devices to   (A) increase the recombination rate (B) reduce the recombination rate (C) make silicon a direct gap semiconductor (D) make silicon semi-metal

Last Answer : To  increase  the  combinational  rate  at  the  pn  junction