Construction
A PIN diode is made up of three semiconductor materials; two heavily doped P- and N- type material separated by an intrinsic (undoped) semiconductor (I) as shown in above figure.
The wide intrinsic region is in contrast to an ordinary PN diode. The wide intrinsic region makes the PIN diode an inferior rectifier (one typical function of a diode), but it makes the PIN diode suitable for attenuators, fast switches, photo detectors, and high voltage power electronics applications.
The Intrinsic region offers a high resistance to the current flowing through it.
The capacitance between the P and N region decreases because of the increased separation between the P and N region. This advantage allows the PIN diode to have fast response time.
Hence these diodes are used at very high frequencies (i.e. above 300 MHz).
There is a greater electron-home pair generation because of the increased electric field between the P and N region. This advantage allows the PIN diode to process even weak signals.
Characteristics