As compared to power MOSFET, a BJT has

As compared to power MOSFET, a BJT has 

(a) Lower switching losses but higher conduction losses (b) Higher switching losses and higher conduction losses (c) Higher switching losses but lower conduction losses (d) Lower switching losses and lower conduction losses. 
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1 Answer

Answer :

As compared to power MOSFET, a BJT has Higher switching losses but lower conduction losses 

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Related questions

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What is the difference between BJT and FET?

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Last Answer : A MOSFET like a BJT has alternating layers of p and n type semiconductors. However, unlike BJT the p type body region of a MOSFET does not have an external electrical connection. The gate ... .  Distributed under Creative Commons Attribution-ShareAlike - CC BY-SA. Version 2 EE IIT, Kharagpur

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State 2 advantages of JFET over BJT.

Description : State 2 advantages of JFET over BJT.

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Name two types of BJT &draw their symbols.

Description : Name two types of BJT &draw their symbols. 

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List the types of coupling used in BJT amplifier.

Description : List the types of coupling used in BJT amplifier. 

Last Answer : Types of coupling used in BJT amplifier: i. Resistance capacitance (RC)coupling ii. Impedance coupling iii. Transformer coupling iv. Direct coupling

Comparison of three configuration of BJT

Description : Comparison of three configuration of BJT

Last Answer : Parameter Common Base(CB) Common Emitter (CE) Common collector (CC) Input terminal  Emitter Base Base Common terminal Base Emitter Collector Output terminal Collector Collector Emitter Gain factor Alpha(Ic/Ie) Beta(Ic/Ib) Gamma(Ie/Ib)

Comparison of BJT and FET

Description : Comparison of BJT and FET

Last Answer : FET BJT It is unipolar device i.e. current in the device is carried either by electrons or holes It is bipolar device i.e. current in the device is carried either by both ... is comparatively more noisy. It is relatively immune to radiation. It is susceptible to radiation

Draw circuit diagram of two stage RC coupled amplifier using BJT

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Last Answer : * The bipolar junction transistor (BJT) has small signal current gain, α (hfb). * Maximum collector current Ic (max). * Maximum collector to emitter voltage, VCE (max). * Collector to emitter ... . * Collector to emitter cut off voltage, VCEO. * Base emitter saturation voltage, VBE (sat).

State reason BJT is called as bipolar junction transistor.

Description : State reason BJT is called as bipolar junction transistor.

Last Answer : BJT is called bipolar junction transistor because in BJT current conduction takes place due to majority as well as minority charge carriers.

Identify type of BJT configuration having following features : (i) BJT configuration having the least current gain. (ii) KIT configuration called as voltage follower. (iii) BJT configuration having current gain less than one. (iv) BJT configuration suitable for impedance matching. (v) BIT configuration suitable for voltage amplification. (vi) BJT configuration having the least output impedance.

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Last Answer : (i) BJT configuration having the least current gain : Common Base Configuration  (ii) KIT configuration called as voltage follower: Common Collector Configuration  (iii) BJT ... Emitter Configuration  (vi) BJT configuration having the least output impedance: Common Collector Configuration

List configurations of BJT.

Description : List configurations of BJT. 

Last Answer : Configurations of BJT : 1) Common Base (CB) configuration 2) Common Emitter (CE) configuration 3) Common Collector (CC) configuration

State the need of biasing of BJT.

Description : State the need of biasing of BJT.

Last Answer : Need of biasing: The basic need of transistor biasing is to keep the base-emitter (B-E) junction properly forward biased and the collector-emitter (C-E) junction properly reverse biased ... transistor biasing is necessary for normal and proper operation of transistor to be used for amplification.