The conduction loss versus device current characteristic of a power MOSFET is best approximated by

The conduction loss versus device current characteristic of a power MOSFET is best approximated by (A) a parabola (B) a straight line (C) a rectangular hyperbola (D) an exponentially decaying function
by

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Answer :

The conduction loss versus device current characteristic of a power MOSFET is best approximated by a parabola

by

Related questions

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When does the Body bias effect occur in an n-channel MOSFET?

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Assume that the n—channel MOSFET shown in figure is ideal and that its threshold voltage is +1 .0 V.

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Last Answer : A depletion MOSFET differs from a JFET in the sense that it has no P-N junctions 

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Last Answer : The MOSFET to act as an amplifier is biased in  saturation region

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Last Answer : In a n-channel MOSFET, an inversion layer is accumulation of electrons near the surface of the substrate under the gate 

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Last Answer : To increase size of a MOSFET transistor Increase width only

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Last Answer : A MOSFET having three terminals 1st one is Gate (insulated), 2nd one is Source and 3rd one is Drain.

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Description : What is channel length modulation in MOSFET?

Last Answer : Shortening of lenght of the inverted channel region with increase in drain bias for large drain biases due to which current increases with drain bias and output resistance decreases is called channel length modulation in MOSFET.

Why Mosfet is called Mosfet?

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Last Answer : Why Mosfet is called Mosfet?

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Last Answer : In MOSFET, the polarity of the inversion layers is the same as that of majority carriers in the source.

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Last Answer : MOSFET uses the electric field of gate capacitance.

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Last Answer : Yes, the input impedance of MOSFET more than BJT and FET.

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is mosfet current controlled device?

Last Answer : No, MOSFET is not the curent controlled device. The current between drain and source which is drain current is controlled by applying a voltage between gate and source hence MOSFET is a voltage controlled device. 

Power MOSFET is a voltage controlled device. Why?

Description : Power MOSFET is a voltage controlled device. Why?

Last Answer : Because the output (drain) current can be controlled by gate-source voltage.

Which is the most suitable power device for high frequency ( more 100 kHz) switching application? a) Power MOSFET b) BJT c) SCR d) UJT

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Last Answer : Ans: Power MOSFET

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Last Answer : A. 0.871 μW

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why mosfet is voltage controlled device?

Last Answer : already answered here is mosfet current controlled device?

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Last Answer : b.approximation curve

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Last Answer : 4v/ 2 ~5.7

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Last Answer : 300 m^2

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When the method of wound healing is one in which wound edges are not surgically approximated and integumentary continuity is restored by granulations, the wound healing is termed a) second intention healing. When wounds dehisce, they will be allowed to heal by secondary intention. b) primary intention healing. Primary or first intention healing is the method of healing in which wound edges are surgically approximated and integumentary continuity is restored without granulating.

Description : When the method of wound healing is one in which wound edges are not surgically approximated and integumentary continuity is restored by granulations, the wound healing is termed a) ... of wound edges is delayed and integumentary continuity is restored by bringing apposing granulations together.

Last Answer : a) second intention healing. When wounds dehisce, they will be allowed to heal by secondary intention.

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Find the loss tangent of a material with conduction current density of 5 units and displacement current density of 10 units. a) 2 b) 0.5 c) 5 d) 10

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Last Answer : b) 0.5

The ratio of conduction to displacement current density is referred to as a) Attenuation constant b) Propagation constant c) Loss tangent d) Dielectric constant

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Last Answer : c) Loss tangent

Which of the following ECG waveforms characterizes conduction of an electrical impulse through the left ventricle? a) QRS complex The QRS complex represents ventricular depolarization b) P wave The P wave is an ECG characteristic reflecting conduction of an electrical impulse through the atria. c) PR interval The PR interval is a component of an ECG tracing reflecting conduction of an electrical impulse through the AV node. d) QT interval The QT interval is an ECG characteristic reflecting the time from ventricular depolarization to repolarization.

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Last Answer : a) QRS complex The QRS complex represents ventricular depolarization

Which of the following ECG characteristics is usually seen when a patient’s serum potassium level is low? a) U wave The U wave is an ECG waveform characteristic that may reflect Purkinje fiber repolarization. It is usually seen when a patient’s serum potassium level is low. b) T wave The T wave is an ECG characteristic reflecting repolarization of the ventricles. It may become tall or “peaked” if a patient’s serum potassium level is high. c) P wave The P wave is an ECG characteristic reflecting conduction of an electrical impulse through the atria. d) QT interval The QT interval is an ECG characteristic reflecting the time from ventricular depolarization to repolarization.

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Last Answer : a) U wave The U wave is an ECG waveform characteristic that may reflect Purkinje fiber repolarization. It is usually seen when a patient’s serum potassium level is low.

The characteristic feature(s) of dihydropyridine calcium channel blockers is/are: A. They have minimal negative inotropic action on the heart B. They have no effect on A-V conduction C. They do not affect the activation-inactivation kinetics of the calcium channels D. All of the above

Description : The characteristic feature(s) of dihydropyridine calcium channel blockers is/are: A. They have minimal negative inotropic action on the heart B. They have no effect on A-V conduction C. They do not affect the activation-inactivation kinetics of the calcium channels D. All of the above

Last Answer : D. All of the above

MOSFET are current controlled or voltage controlled devices?

Last Answer : MOSFET  are voltage controlled devices.

What is the Laplace transform of step signal of 5 units magnitude?

Description : What is the Laplace transform of step signal of 5 units magnitude?  A) 5s B) 5/s C) s/5 D) 1/s 

Last Answer : What is the Laplace transform of step signal of 5 units magnitude?  A) 5s B) 5/s C) s/5 D) 1/s 

The body effect in the MOS technology refers to

Description : The body effect in the MOS technology refers to  (A) size of the drain on the drain current  (B) doping of the drain on the drain current  (C) effect of the reverse bias voltage between ... on the drain current  (D) effect of the reverse bias voltage between drain and body on the drain current

Last Answer : The body effect in the MOS technology refers to effect of the reverse bias voltage between source and body on the drain current 

Fill in the blank(s) with the appropriate word(s)

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What are the different types of power MOSFET?

Description : What are the different types of power MOSFET?

Last Answer : a. N-channel MOSFET b. P-channel MOSFET

As compared to power MOSFET, a BJT has

Description : As compared to power MOSFET, a BJT has  (a) Lower switching losses but higher conduction losses (b) Higher switching losses and higher conduction losses (c) Higher switching losses but lower conduction losses (d) Lower switching losses and lower conduction losses. 

Last Answer : As compared to power MOSFET, a BJT has Higher switching losses but lower conduction losses 

Explain the formation of parasitic BJT and parasitic diode in Power MOSFET.

Description : Explain the formation of parasitic BJT and parasitic diode in Power MOSFET. Can parasitic diode be used in same power electronics applications?

Last Answer : Parasitic Diode: The parasitic diode is in between drain and source. The MOSFET structure itself contains parasitic diode or body drain diode. This parasitic diode allows the reverse flow of current when the ... of MOSFET as a BJT collector. Parasitic BJT operates in the cut-off region.

Operating frequency of power MOSFET is higher than that of power BJT. Justify the statement.

Description : Operating frequency of power MOSFET is higher than that of power BJT. Justify the statement.

Last Answer : Power MOSFET have high turning on and turning off capability high switching speed of MOSFET is due to the high rate of change of drain voltage. The switching losses of power MOSFET ... lower frequency. Hence, operating frequency of power MOSFET is higher than that of power BJT.

Why MOSFET is used for low power applications?

Last Answer : MOSFET have high current losses due to High on state resistance. Hence MOSFET is used for low power applications.