parallel operation of mosfet can be done more easily as compared to thyristor. why?

parallel operation of MOSFET can be done more easily as compared to thyristor. why?
by
recategorized

1 Answer

Answer :

Parallel operation of MOSFET can be done more easily as compared to thyristor because the resistance of MOSFET is increases with increase in temperature. MOSFET have the positive temperature coefficient. In positive temperature coefficient, the resistance increases with increase in temperature and in case of negative temperature coefficient resistance decrease with increase in temperature. Due to the positive temperature coefficient of MOSFET if we connect MOSFET in parallel and if the current in particular MOSFET increases then due to losses the temperature in that particular MOSFET will be increased. This increase in temperature will also increase the internal resistance of that particular MOSFET, therefore, the current in that particular MOSFET will also decrease this thing will balance the current in MOSFETs.

But in case of a thyristor which is a negative temperature coefficient device. So due to negative temperature coefficient, the resistance in the thyristor will decrease when the temperature of thyristor will increase this causes more current to flow due to low resistance.Hence the parallel operation of MOSFET can be done more easily as compared to the thyristor.
by
selected

Related questions

Explain the series and parallel operation of MOSFET. Which is suitable and why ?

Description : Explain the series and parallel operation of MOSFET. Which is suitable and why?

Last Answer : Series operation of MOSFET: To increase voltage handling capability MOSFETs are connected in series. When the MOSFETs are connected in series each MOSFET should turn on and turn off ... on and turn off time and transconductance. Each MOSFET should share current equally.  

An additional condition for parallel operation of three-phase transformers over single-phase transformers is that

Description : An additional condition for parallel operation of three-phase transformers over single-phase transformers is that

Last Answer : An additional condition for parallel operation of three-phase transformers over single-phase transformers is that the transformers should belong to the same vector group

explain the parallel operation of IGBT?

Description : Also, highlight the problem faced during parallel operation.

Last Answer : Parallel operation of IGBT: Parallel operation of IGBT is done for obtaining high current rating. Paralleling of IGBT reduces conduction losses and thermal stress. IGBT combines the qualities of ... . IGBTs must share losses equally otherwise IGBT may get failure due to thermal differences.

Describe the operation of N channel enhancement type MOSFET with diagram.

Description : Describe the operation of N channel enhancement type MOSFET with diagram.

Last Answer : As its name indicates, this MOSFET operates only in the enhancement mode and has no depletion mode. It operates with large positive gate voltage only. It does not conduct when the ... of charge carriers attracted to the positive gate. Thus drain current is controlled by the gate potential.

For the parallel operation of two or more D.C. compound generators, we should ensure that?

Last Answer : For the parallel operation of two or more D.C. compound generators, we should ensure that series fields of all generators should be either on positive side or negative side of the armature.

For the parallel operation of single phase transformers it is necessary that they should have?

Last Answer : Necessary conditions required to be satisfied in order to ensure successful parallel operation of single phase transformers:  1. Only transformers having the same phase displacement between primary and secondary ... . 7. The phase sequence must be followed strictly on HV and LV side connection.

Thyristor can be protected from over voltages by using

Description : Thyristor can be protected from over voltages by using

Last Answer : Thyristor can be protected from over voltages by using Voltage clamping device

Leakage current flows through the thyristor in

Description : Leakage current flows through the thyristor in

Last Answer : Leakage current flows through the thyristor in Forward blocking mode and Reverse blocking mode.

What is a phase control thyristor?

Description : What is a phase control thyristor?

Why thyristor are not preferred for inverter?

Description : Why thyristor are not preferred for inverter?

What is thyristor family?

Description : What is thyristor family?

What is meant by firing angle of thyristor?

Description : What is meant by firing angle of thyristor?

Last Answer : The point at which SCR is triggered is known as firings angle of thyristor.

What is the use of a thyristor in a circuit?

Description : What is the use of a thyristor in a circuit?

What is a reverse conducting thyristor?

Description : What is a reverse conducting thyristor?

What is the function of a thyristor?

Description : What is the function of a thyristor?

Why SCR is called as thyristor?

Description : Why SCR is called as thyristor?

Is a SCR a thyristor?

Description : Is a SCR a thyristor?

Last Answer : Yes, SCR is a thyristor. Thyristor is the family and SCR is the member of that family but SCR is universally known as thyristor.

How is a thyristor used to convert AC to DC?

Description : How is a thyristor used to convert AC to DC?

Last Answer : thyristor

What is the application of thyristor?

Description : What is the application of thyristor?

Is thyristor a DC switch?

Last Answer : Yes ,it is one of the main advantage using thristors as a  switch in DC  circuit ,it has a high current gain

Explain thyristor gate drive circuit.

Description : Explain thyristor gate drive circuit.

Last Answer : Thyristor Gate Drive Circuit: The thyristor can be turned on by pulse voltage signal at gate terminal and it does not require continuous drive signal like the transistor. The gate ... circuit provide required minimum gate voltage and gate current then the thyristor conducts properly.

what are the disadvantages of thyristor?

Description : what are the disadvantages of thyristor?

Last Answer : Disadvantages of thyristor The silicon controlled rectifier (SCR) is unidirectional devices, so it can control power only in DC power during positive half cycle of AC supply. Thus only DC power is ... cycle. It cannot be used at higher frequencies. The gate current cannot be negative

write short notes on thyristor CSI .

Description : write short notes on thyristor CSI .

Last Answer : Current-source inverter (CSI) is an inverter with a DC current input. Current source inverters are most commonly used in very high power AC motor drives.

what is gate turn off thyristor (GTO)?

Description : Draw the structural diagram of GTO. Explain briefly the switching behavior of GTO with the help of appropriate voltage and current waveform.

Last Answer : Gate Turn Off Thyristor (GTO) Conventional Thyristor can be turned on with gate terminal but can not turn off from gate terminal. But in case of Gate Turn Off Thyristor (GTO), we can turn it on and off ... subdivided as storage period (Ts), fall period (Tp) and tail period (Tt).

Describe with neat sketch the construction and working principle of MOSFET.

Description : Describe with neat sketch the construction and working principle of MOSFET.

Last Answer : Construction and working principle of MOSFET:  A) Depletion type MOSFET: Construction: The N-channel depletion type MOSFET is formed on P-type silicon substrate with two heavily ... accumulation of electrons and hence more current. Thus the MOSFET is a gate voltage controlled device.

State the applications of MOSFET

Description : State the applications of MOSFET

Last Answer : Applications of MOSFET: i) Switching-mode-power-supplies (SMPS) and linear power supplies. ii) Brushless DC motor drives iii) Solid state DC relay iv) Automobile applications v) Stepper motor controller vi) Lighting controls vii) Solenoid drivers viii) Robotics ix) Induction heating

The threshold voltage of an n- channel enhancement mode MOSFET is 0.5V when the device is biased at

Description : The threshold voltage of an n- channel enhancement mode MOSFET is 0.5V when the device is biased at a gate voltage of 3V. Pinch off would be occurs at a drain voltage of (A) 1.5V (B) 2.5V (C) 3.5V (D) 4.5V

Last Answer : The threshold voltage of an n- channel enhancement mode MOSFET is 0.5V when the device is biased at a gate voltage of 3V. Pinch off would be occurs at a drain voltage of 2.5V

Which phenomenon is present in thyristors but absent in BJT, MOSFET and IGBT ?

Description : Which phenomenon is present in thyristors but absent in BJT, MOSFET and IGBT ? (A) forward conduction (B) latching (C) forward blocking (D) reverse breakdown

Last Answer : Which phenomenon is present in thyristors but absent in BJT, MOSFET and IGBT ? (A) forward conduction (B) latching (C) forward blocking (D) reverse breakdown

Explain switching model of MOSFET.

Description : Explain switching model of MOSFET.

Explain MOSFET gate drive circuit and totem pole configuration.

Description : Explain MOSFET gate drive circuit and totem pole configuration.

Last Answer : MOSFET gate drive circuit: The turning on and turning off of MOSFET can be controlled from gate to source voltage signal. If the gate to source voltage of MOSFET exceeds threshold ... this configuration, the two switches (transistors) are used in totem pole arrangement with a comparator.

Explain the formation of parasitic BJT and parasitic diode in Power MOSFET.

Description : Explain the formation of parasitic BJT and parasitic diode in Power MOSFET. Can parasitic diode be used in same power electronics applications?

Last Answer : Parasitic Diode: The parasitic diode is in between drain and source. The MOSFET structure itself contains parasitic diode or body drain diode. This parasitic diode allows the reverse flow of current when the ... of MOSFET as a BJT collector. Parasitic BJT operates in the cut-off region.

Operating frequency of power MOSFET is higher than that of power BJT. Justify the statement.

Description : Operating frequency of power MOSFET is higher than that of power BJT. Justify the statement.

Last Answer : Power MOSFET have high turning on and turning off capability high switching speed of MOSFET is due to the high rate of change of drain voltage. The switching losses of power MOSFET ... lower frequency. Hence, operating frequency of power MOSFET is higher than that of power BJT.

Justify the statement. Antiparallel diode is connected across MOSFET.

Description : Justify the statement. Antiparallel diode is connected across MOSFET.

Last Answer : In MOSFET current is flow from drain to source but when the load is inductive the current may flow in opposite direction. To avoid the opposite flow of current and to protect MOSFET the antiparallel diode is connected across MOSFET.

Justify. Power MOSFET is operated at high enough gate source voltage to minimize the conduction losses.

Description : Justify. Power MOSFET is operated at high enough gate source voltage to minimize the conduction losses. 

Last Answer : MOSFET is metal oxide field effect transistor. MOSFET is a voltage controlled device. MOSFET is majority carrier device. MOSFET are of two one is n-channel MOSFET and p-channel MOSFET. Gate, ... . Hence, power MOSFET is operated at high enough gate-source voltage to minimize the conduction losses.

Explain difference between enhancement MOSFET and depletion type MOSFET.

Description : Explain difference between enhancement MOSFET and depletion type MOSFET.

Last Answer : In enhancement MOSFET channel is not initially exists but in depletion MOSFET channel is already exists. In case of depletion MOSFET if the voltage is applied between drain and source the drain current will flow ... a channel. depletion MOSFET & enhancement MOSFET

Compare BJT, MOSFET and IGBT .

Description : Compare BJT, MOSFET and IGBT .

Last Answer : BJT MOSFET IGBT BJT is a current controlled device. MOSFET is a voltage controlled device. IGBT is a voltage controlled device. The input impedance of BJT is low. ... is minority carrier device. MOSFET is majority carrier device. IGBT is minority carrier device.

why IGBT is preferred as a power switch over both power BJT and MOSFET?

Last Answer : Because it has a higher switching frequency and heat tolerance.

what is depletion type MOSFET?

Description : What is depletion type MOSFET?..........

Last Answer : Depletion MOSFET: Depletion MOSFET is a MOSFET in which the channel already exists. If we apply a voltage between drain and source then the drain current will flow even if the gate to source ... in figure. The drain current will be reduced as the gate to source voltage made more negative.

what is enhancement MOSFET?

Description : What is enhancement MOSFET?...............

Last Answer : Enhancement MOSFET: There are two types of MOSFET one is enhancement MOSFET and second is depletion MOSFET. In enhancement MOSFET channel is created by applying threshold voltage between gate and source ... mode. The enhancement MOSFET will not conduct if the gate to source voltage is zero.

why igbt is used instead of bjt and mosfet?

Last Answer : ON state losses of IGBT is less as compared to MOSFET and BJT.