Metal Oxide Semiconductor Field Effect Transistor (MOSFET)

1 Answer

Answer :

MOSFET (Metal Oxide Semiconductor Field Effect Transistor)

Field effect transistor (Electric field control electrical behavior)
Change conductivity from applied voltage
Switching or amplifying
Three terminal device
Voltage controlled device
Majority carrier device (charge carrier present in majority)
Unipolar device (Only one type of charge carrier involved in operation)
Positive temperature coefficient device
Input Impedance is high
Fast switching speed
Conduction losses are high

Simple drive circuit

Very low power consumption

Millions in memory chip or microprocessor

Types Enhancement mode and Depletion mode

Subtypes P-channel and N-channel

image image image image image image

Related questions

Description : MOSFET stands for? a. Metal-oxide-semiconductor field effect transistor b. Metal-oxide-semiconductor fan effort transistor c. Both A and B d. None of these

Last Answer : a. Metal-oxide-semiconductor field effect transistor

Description : To increase size of a MOSFET transistor (A) Increase width only (B) Increase length only (C) Increase both width and length (D) None of the above

Last Answer : To increase size of a MOSFET transistor Increase width only

Description : MOSFET uses the electric field of?

Last Answer : MOSFET uses the electric field of gate capacitance.

Description : When does the Body bias effect occur in an n-channel MOSFET?  A) When the Source voltage is less the Bulk voltage B) When the Source voltage is equal to or greater the Bulk voltage C) When the Drain voltage is equal to the Bulk voltage D) When the Gate voltage is equal to the Bulk Voltage 

Last Answer : When does the Body bias effect occur in an n-channel MOSFET?  A) When the Source voltage is less the Bulk voltage B) When the Source voltage is equal to or greater the Bulk voltage C) ... voltage is equal to the Bulk voltage D) When the Gate voltage is equal to the Bulk Voltage 

Description : What are the main constructional differences between a MOSFET and a BJT? What effect do they have on the current conduction mechanism of a MOSFET? 

Last Answer : A MOSFET like a BJT has alternating layers of p and n type semiconductors. However, unlike BJT the p type body region of a MOSFET does not have an external electrical connection. The gate ... .  Distributed under Creative Commons Attribution-ShareAlike - CC BY-SA. Version 2 EE IIT, Kharagpur

Description : A certain power MOSFET has a maximum junction temperature specification of 1500o C, a junction-to-case thermal resistance of 1.00 C/W, and a junction-to ambient thermal resistance of 600 C/W. If the ambient temperature is 300o C ... the device will be A) 1.52 W B) 1.72 W C) 1.92W D) 2.00 W

Last Answer : A certain power MOSFET has a maximum junction temperature specification of 1500o C, a junction-to-case thermal resistance of 1.00 C/W, and a junction-to ambient thermal resistance of  ... 300o C, then the maximum allowable power dissipation in the device will be 2.00 W 

Description : Assume that the n-channel MOSFET shown in figure is ideal and that its threshold voltage is +1 .0 V. The voltage Vab between nodes a and b is A)5V B)2V C)1V D)0V

Last Answer : Assume that the n-channel MOSFET shown in figure is ideal and that its threshold voltage is +1 .0 V. The voltage Vab between nodes a and b is 0V

Description : The conduction loss versus device current characteristic of a power MOSFET is best approximated by (A) a parabola (B) a straight line (C) a rectangular hyperbola (D) an exponentially decaying function

Last Answer : The conduction loss versus device current characteristic of a power MOSFET is best approximated by a parabola

Description : A depletion MOSFET differs from a JFET in the sense that it has no   (A) channel (B) gate (C) P-N junctions (D) substrate

Last Answer : A depletion MOSFET differs from a JFET in the sense that it has no P-N junctions 

Description : The MOSFET to act as an amplifier is biased in  (A) cut-off region (B) saturation region (C) triode region (D) any of the above regions

Last Answer : The MOSFET to act as an amplifier is biased in  saturation region

Description : In a n-channel MOSFET, an inversion layer is  (A) accumulation of electrons near the surface of the substrate under the gate  (B) accumulation of electrons near the drain  (C) accumulation of electrons near the surface  (D) accumulation of hole in the substrate

Last Answer : In a n-channel MOSFET, an inversion layer is accumulation of electrons near the surface of the substrate under the gate 

Description : Fill in the blank(s) with the appropriate word(s)  i. A MOSFET operates in the ________________ mode when vGS < vGS(th)  ii. In the ohmic region of operation of a MOSFET vGS - vGS (th) ... ix. The safe operating area of a MOSFET is restricted on the left hand side by the ________________ limit. 

Last Answer : i. A MOSFET operates in the Cut off mode when vGS < vGS(th) ii. In the ohmic region of operation of a MOSFET vGS - vGS (th) is greater than vDS. iii. rDS (ON) of a MOSFET decreases ... Distributed under Creative Commons Attribution-ShareAlike - CC BY-SA. Version 2 EE IIT, Kharagpur

Last Answer : Steady state output i-v characteristics of a MOSFET   The MOSFET, like the BJT is a three terminal device where the voltage on the gate terminal controls the flow of current between the ... Distributed under Creative Commons Attribution-ShareAlike - CC BY-SA. Version 2 EE IIT, Kharagpur

Description : A MOSFET has how many terminals?

Last Answer : A MOSFET having three terminals 1st one is Gate (insulated), 2nd one is Source and 3rd one is Drain.

Description : What is channel length modulation in MOSFET?

Last Answer : Shortening of lenght of the inverted channel region with increase in drain bias for large drain biases due to which current increases with drain bias and output resistance decreases is called channel length modulation in MOSFET.

Description : Why Mosfet is called Mosfet?

Last Answer : Why Mosfet is called Mosfet?

Description : In MOSFET, the polarity of the inversion layers is the same as that of?

Last Answer : In MOSFET, the polarity of the inversion layers is the same as that of majority carriers in the source.

Description : Is the input impedance of MOSFET more than BJT and FET?

Last Answer : Yes, the input impedance of MOSFET more than BJT and FET.

Description : The new technology which is emerging in the field of computer is (1) IC-technology (2) Parallel processing system (3) Semiconductor technology (4) Transistor technology

Last Answer : Transistor technology

Description : A modern power semiconductor device IGBT is combines the characteristics of a) BJT and MOSFET b) FCT and GTO c) SCR and MOSFET d) SCR and BJT

Last Answer : Ans: BJT and MOSFET

Description : MOS stands for 1) Metal Oxide Semiconductor 2) Most Often Store 3) Method Organised Stack 4) None of these

Last Answer : 2) Most Often Store

Description : HMOS stands for: a. High performance metal oxide semiconductor b. High processor metal oxide semiconductor c. Both A and b d. None of these

Last Answer : a. High performance metal oxide semiconductor

Description : NMOS stands for: a. N-channel metal-oxide-semiconductor b. P-channel metal-oxide-semiconductor c. N-channel memory-oxide-semiconductor d. All the above

Last Answer : a. N-channel metal-oxide-semiconductor

Description : PMOS stands for: a. P-channel metal-oxide-semiconductor b. P-channel memory –oxide-semiconductor c. Both A and B d. None of these

Last Answer : a. P-channel metal-oxide-semiconductor

Description : MOS stand for: a. Metal oxide semiconductor b. Memory oxide semiconductor c. A and B d. None of these

Last Answer : a. Metal oxide semiconductor

Description : MOS stands for: a. Metal oxide semiconductor b. Memory oxide semiconductor c. Metal oxide select d. None of these

Last Answer : a. Metal oxide semiconductor

Description : The transistor with the lowest noise figure in the microwave region is a A. MOSFET B. Dual-gate MOSFET C. JFET D. MESFET

Last Answer : D. MESFET

Description : In the illustrated amplifier, the base of the transistor is what type of material? EL-0022 A. N type B. P type C. metal oxide insulator D. alloy junction material

Last Answer : Answer: A

Description : In a transistor, the base is _______. (1) an insulator (2) a conductor of low resistance (3) a conductor of high resistance (4) an extrinsic semiconductor

Last Answer : (2) a conductor of low resistance Explanation: A transistor is a semiconductor device used to amplify and switch electronic signals and electrical power. It is composed of semiconductor material with at least three terminals for connection to an external circuit.

Description : The main difference between an electron tube and a transistor is the _____________. A. type of function they can perform B. reaction of electron flow through a gas or vacuum in a transistor C. ... when placed in a tube D. reaction of electron flow through a semiconductor used to form a transistor

Last Answer : Answer: D

Description : What characteristic of a transistor is varied in a semiconductor-reactance modulator?

Last Answer : Collector-to-emitter capacitance.

Description : A semiconductor device made up of a single p-n Junction is called a: w) transistor x) diode y) Fet z) integrated circuit

Last Answer : ANSWER: X -- DIODE

Description : Which semiconductor device acts like a diode and two transistor : -  a) SCR b) Triac c) UJT d) Diac

Last Answer : Which semiconductor device acts like a diode and two transistor : - UJT

Description : The body effect in the MOS technology refers to  (A) size of the drain on the drain current  (B) doping of the drain on the drain current  (C) effect of the reverse bias voltage between ... on the drain current  (D) effect of the reverse bias voltage between drain and body on the drain current

Last Answer : The body effect in the MOS technology refers to effect of the reverse bias voltage between source and body on the drain current 

Description : Figure 'B' shown in the illustration represents a/an ____________. EL-0067 A. silicon controlled rectifier B. junction field effect transistor C. diac thyristor D. IG MOS field effect transistor

Last Answer : Answer: A

Description : Figure 'A' of the diagram shown in the illustration represents a/an ____________. EL-0078 A. silicon controlled rectifier B. IG or MOS field effect transistor C. triac thyristor D. junction field effect transistor

Last Answer : Answer: B

Description : Figure 'B' of the diagram shown in the illustration represents a/an ____________. EL-0065 A. silicon controlled rectifier B. junction field effect transistor C. diac thyristor D. IG or MOS field effect transistor

Last Answer : Answer: B

Description : The symbol in figure 'A' shown in the illustration represents a ____________. EL-0065 A. diac B. field effect transistor C. silicon controlled rectifier D. unijunction transistor

Last Answer : Answer: D

Description : Define junction field effect transistor (JFET) and give an example.

Last Answer : Junction Field-Effect Transistor: It is a semiconductor device having three terminals, namely Gate, Drain and Source, in which the current flow is controlled by an electric field set up by an external voltage applied ... : i) n-channel JFET and ii) p-channel JFET Examples of JFET: BFW 10, BFW 11 

Description : What is the Laplace transform of step signal of 5 units magnitude?  A) 5s B) 5/s C) s/5 D) 1/s 

Last Answer : What is the Laplace transform of step signal of 5 units magnitude?  A) 5s B) 5/s C) s/5 D) 1/s 

Description : Fill in the blank(s) with the appropriate word(s)  i. A MOSFET is a ________________ controlled ________________ carrier device.  ii. Enhancement type MOSFETs are normally ... the ________________ layer remains constant as gate source voltage is increased byond the ________________ voltage. 

Last Answer : i. A MOSFET is a voltage controlled majority carrier device.  ii. Enhancement type MOSFETs are normally off devices while depletion type MOSFETs are normally on devices.   iii ... Distributed under Creative Commons Attribution-ShareAlike - CC BY-SA. Version 2 EE IIT, Kharagpur

Description : The transit time of the current carriers through the channel of a JFET decides it's?

Last Answer : The transit time of the current carriers through the channel of a JFET decides it's gate characteristics.

Description : Pick out the wrong statement. (A) Copper is the metal having the highest electronic conductivity (B) Hardenability & Weldability of metals are inversely related (C) Covalent bonding formed by ... all semiconductor materials (D) Glass transition temperature applies to 'polymers' but not to 'glasses'

Last Answer : Option A

Description : What type of rectifier is constructed by sandwiching a section of semiconductor material between two metal plates?

Last Answer : Metallic rectifier.

Description : What type of PN diode is formed by using a fine metal wire and a section of N-type semiconductor material?

Last Answer : Point-contact.

Description : The domain in a gallium-arsenide semiconductor has what type of electrical field when compared to the other regions across the body of a semiconductor?

Last Answer : A field of much greater intensity.

Description : What is the effect of temperature on an intrinsic semiconductor?

Last Answer : An intrinsic semiconductor is basically a pure semiconductor, though some might argue that a small amount of doping can still yield an intrinsic semiconductor. In the crystal structure of ... semiconductor has a positive temperature coefficient. More heat, more conduction under the same conditions.

Description : Which of the listed conditions describes the effect on intrinsic semiconductor operation as a result of a temperature increase? A. Additional heat sinks will be required B. Conductivity will increase C. Conductivity will decrease D. Resistivity will increase

Last Answer : Answer: B

Description : Hall effect may be used for which of the following? (A) determining whether the semiconductor is p or n type. (B) determining the carrier concentration. (C) calculating the mobility. (D) All the above.

Last Answer : (D) All the above. Ans: D Determining whether the semiconductor is p or n type, determining the carrier concentration, calculating the mobility

Description : (i) Explain the process of diffusion in semiconductor material. (ii) Explain Hall effect.

Last Answer : (i) Diffusion: In a semi conductor bar a concentration gradient exist when either number of electrons or holes is greater in one region of a semi conductor as compared to other region. When ... to determine whether a semiconductor is N type or P type, and to find carrier concentration