Fill in the blank(s) with the appropriate word(s)
i. A MOSFET is a ________________ controlled ________________ carrier device.
ii. Enhancement type MOSFETs are normally ________________devices while depletion type MOSFETs are normally ________________ devices.
iii. The Gate terminal of a MOSFET is isolated from the semiconductor by a thin layer of ________________.
iv. The MOSFET cell embeds a parasitic ________________ in its structure.
v. The gate-source voltage at which the ________________ layer in a MOSFET is formed is called the ________________ voltage.
vi. The thickness of the ________________ layer remains constant as gate source voltage is increased byond the ________________ voltage.
i. A MOSFET is a ________________ controlled ________________ carrier device.
ii. Enhancement type MOSFETs are normally ________________devices while depletion type MOSFETs are normally ________________ devices.
iii. The Gate terminal of a MOSFET is isolated from the semiconductor by a thin layer of ________________.
iv. The MOSFET cell embeds a parasitic ________________ in its structure.
v. The gate-source voltage at which the ________________ layer in a MOSFET is formed is called the ________________ voltage.
vi. The thickness of the ________________ layer remains constant as gate source voltage is increased byond the ________________ voltage.