Construction of p-channel D-MOSFET:
Working principle:
The gate to source voltage is set to zero volts by the direct connection from one terminal to the other & voltage VDS is applied across the drain to source terminals. This result the flow of current is positively charged holes.
When gate is negative with respect to source then the electrons present under the oxide layer are pushed downward into the substrate with a repulsive force and draws additional holes from the N type substrate. Thus drain current (ID) increases as increase in negative value.
For positive voltage at gate, the gate will tend to repel holes towards N type substrate and attract electrons from the substrate toward insulated layer. Recombination occurs between electron & holes that will reduce the number of free carriers in the channel for conduction. So drain current reduces. The value of voltage of VGS at which drain current nearly becomes zero is called cut off voltage.