The substrate of an N-channel MOSFET is made of what  material?

1 Answer

Answer :

P-type material.

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Description : The source and drain of an N-channel JFET are made of what type of material?

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Description : Draw symbol for n-channel and p-channel MOSFET.

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Description : Describe the operation of N channel enhancement type MOSFET with diagram.

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Description : When does the Body bias effect occur in an n-channel MOSFET?  A) When the Source voltage is less the Bulk voltage B) When the Source voltage is equal to or greater the Bulk voltage C) When the Drain voltage is equal to the Bulk voltage D) When the Gate voltage is equal to the Bulk Voltage 

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Description : Assume that the n-channel MOSFET shown in figure is ideal and that its threshold voltage is +1 .0 V. The voltage Vab between nodes a and b is A)5V B)2V C)1V D)0V

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Description : In a n-channel MOSFET, an inversion layer is  (A) accumulation of electrons near the surface of the substrate under the gate  (B) accumulation of electrons near the drain  (C) accumulation of electrons near the surface  (D) accumulation of hole in the substrate

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Description : The threshold voltage of an n- channel enhancement mode MOSFET is 0.5V when the device is biased at a gate voltage of 3V. Pinch off would be occurs at a drain voltage of (A) 1.5V (B) 2.5V (C) 3.5V (D) 4.5V

Last Answer : The threshold voltage of an n- channel enhancement mode MOSFET is 0.5V when the device is biased at a gate voltage of 3V. Pinch off would be occurs at a drain voltage of 2.5V

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Last Answer : To prevent damage from static electricity.

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Last Answer : 35 volts.

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Last Answer : Construction of p-channel D-MOSFET: Working principle: The gate to source voltage is set to zero volts by the direct connection from one terminal to the other & voltage VDS is applied ... The value of voltage of VGS at which drain current nearly becomes zero is called cut off voltage. 

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Last Answer : Shortening of lenght of the inverted channel region with increase in drain bias for large drain biases due to which current increases with drain bias and output resistance decreases is called channel length modulation in MOSFET.

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Description : Describe the preparation of a silicon substrate

Last Answer : Crystal is sliced into wafers. Then ground and polished to remove any surface defect.

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Last Answer : From source to drain.

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Last Answer : A power diode has lightly doped n type substrate sandwiched between heavily doped p and n regions  to improve transient behaviour of the diode

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Last Answer : TRACE ROTATE control.

Description : What is MOSFET ?

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Description : What are the different types of power MOSFET?

Last Answer : a. N-channel MOSFET b. P-channel MOSFET

Description : Power MOSFET is a voltage controlled device. Why?

Last Answer : Because the output (drain) current can be controlled by gate-source voltage.

Description : For Selecting MOSFET, what are the major parameters we have to consider in the datasheet?

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Description : For High frequency applications will you prefer MOSFET or IGBT? Why?

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Description : Which of the following low noise transistors is commonly used at microwave frequencies? A. MOSFET B. GASFET C. MESFET D. JFET

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Description : Explain how MOSFET functions?

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Description : What is MOSFET?

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Description : A modern power semiconductor device IGBT is combines the characteristics of a) BJT and MOSFET b) FCT and GTO c) SCR and MOSFET d) SCR and BJT

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