Explain the formation of parasitic BJT and parasitic diode in Power MOSFET. Can parasitic diode be used in same power electronics applications?
Last Answer : Parasitic Diode: The parasitic diode is in between drain and source. The MOSFET structure itself contains parasitic diode or body drain diode. This parasitic diode allows the reverse flow of current when the ... of MOSFET as a BJT collector. Parasitic BJT operates in the cut-off region.
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2.6k views
1 answer
asked
Feb 6, 2018
by
anonymous
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Last Answer : Because it has a higher switching frequency and heat tolerance.
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143 views
1 answer
asked
Sep 15, 2017
by
anonymous

Which phenomenon is present in thyristors but absent in BJT, MOSFET and IGBT ? (A) forward conduction (B) latching (C) forward blocking (D) reverse breakdown
Last Answer : Which phenomenon is present in thyristors but absent in BJT, MOSFET and IGBT ? (A) forward conduction (B) latching (C) forward blocking (D) reverse breakdown
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3.2k views
1 answer
asked
Apr 28, 2018
by
anonymous
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Compare BJT, MOSFET and IGBT .
Last Answer : BJT MOSFET IGBT BJT is a current controlled device. MOSFET is a voltage controlled device. IGBT is a voltage controlled device. The input impedance of BJT is low. ... is minority carrier device. MOSFET is majority carrier device. IGBT is minority carrier device.
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448 views
1 answer
asked
Nov 10, 2017
by
anonymous

Last Answer : ON state losses of IGBT is less as compared to MOSFET and BJT.
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141 views
1 answer
asked
Sep 13, 2017
by
anonymous

Is the input impedance of MOSFET more than BJT and FET?
Last Answer : Yes, the input impedance of MOSFET more than BJT and FET.
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544 views
1 answer
asked
Mar 19, 2018
by
anonymous

Last Answer : Yes IGBT is costlier than BJT and MOSFET.
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2.6k views
1 answer
asked
Sep 29, 2017
by
anonymous

Last Answer : MOSFET provides better efficiency at high frequency and its high speed switching losses are less hence MOSFET is used for high frequency.
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114 views
1 answer
asked
Sep 10, 2017
by
anonymous

Last Answer : Active , Saturation , Cut-off region of operations in BJT.
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2.7k views
2 answers
asked
Sep 27, 2017
by
anonymous

Last Answer : Yes MOSFET can operate at very high frequency.
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102 views
1 answer
asked
Sep 22, 2017
by
anonymous
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Justify the statement. Antiparallel diode is connected across MOSFET.
Last Answer : In MOSFET current is flow from drain to source but when the load is inductive the current may flow in opposite direction. To avoid the opposite flow of current and to protect MOSFET the antiparallel diode is connected across MOSFET.
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160 views
1 answer
asked
Feb 2, 2018
by
anonymous

Justify. Power MOSFET is operated at high enough gate source voltage to minimize the conduction losses.
Last Answer : MOSFET is metal oxide field effect transistor. MOSFET is a voltage controlled device. MOSFET is majority carrier device. MOSFET are of two one is n-channel MOSFET and p-channel MOSFET. Gate, ... . Hence, power MOSFET is operated at high enough gate-source voltage to minimize the conduction losses.
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842 views
1 answer
asked
Dec 7, 2017
by
anonymous

Explain the on state losses in power BJT.
Last Answer : On state losses in power BJT: Transistor have four types of losses one is turn on state losses second is turn off state losses third is turn on switching losses and fourth is turn ... ON = VCE sat x IC With increasing collector current collector to emitter saturation voltage increases.
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295 views
1 answer
asked
Sep 15, 2017
by
anonymous

What is the difference between beta and forced beta for BJT?
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554 views
0 answers
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Feb 20, 2018
by
anonymous

Explain open emitter BJT drive circuit.
Last Answer : open emitter BJT drive circuit:
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262 views
1 answer
asked
Feb 19, 2018
by
anonymous

Describe with neat sketch the construction and working principle of MOSFET.
Last Answer : Construction and working principle of MOSFET: A) Depletion type MOSFET: Construction: The N-channel depletion type MOSFET is formed on P-type silicon substrate with two heavily ... accumulation of electrons and hence more current. Thus the MOSFET is a gate voltage controlled device.
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3.5k views
1 answer
asked
Jul 25, 2019
by
anonymous

State the applications of MOSFET
Last Answer : Applications of MOSFET: i) Switching-mode-power-supplies (SMPS) and linear power supplies. ii) Brushless DC motor drives iii) Solid state DC relay iv) Automobile applications v) Stepper motor controller vi) Lighting controls vii) Solenoid drivers viii) Robotics ix) Induction heating
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87 views
1 answer
asked
Jul 25, 2019
by
anonymous

The threshold voltage of an n- channel enhancement mode MOSFET is 0.5V when the device is biased at a gate voltage of 3V. Pinch off would be occurs at a drain voltage of (A) 1.5V (B) 2.5V (C) 3.5V (D) 4.5V
Last Answer : The threshold voltage of an n- channel enhancement mode MOSFET is 0.5V when the device is biased at a gate voltage of 3V. Pinch off would be occurs at a drain voltage of 2.5V
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314 views
1 answer
asked
Apr 28, 2018
by
anonymous

Explain switching model of MOSFET.
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75 views
0 answers
asked
Mar 10, 2018
by
anonymous

Explain MOSFET gate drive circuit and totem pole configuration.
Last Answer : MOSFET gate drive circuit: The turning on and turning off of MOSFET can be controlled from gate to source voltage signal. If the gate to source voltage of MOSFET exceeds threshold ... this configuration, the two switches (transistors) are used in totem pole arrangement with a comparator.
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348 views
1 answer
asked
Feb 19, 2018
by
anonymous

parallel operation of MOSFET can be done more easily as compared to thyristor. why?
Last Answer : Parallel operation of MOSFET can be done more easily as compared to thyristor because the resistance of MOSFET is increases with increase in temperature. MOSFET have the positive temperature coefficient. In ... the parallel operation of MOSFET can be done more easily as compared to the thyristor.
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300 views
1 answer
asked
Dec 7, 2017
by
anonymous

Explain difference between enhancement MOSFET and depletion type MOSFET.
Last Answer : In enhancement MOSFET channel is not initially exists but in depletion MOSFET channel is already exists. In case of depletion MOSFET if the voltage is applied between drain and source the drain current will flow ... a channel. depletion MOSFET & enhancement MOSFET
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548 views
1 answer
asked
Nov 14, 2017
by
anonymous

Explain the series and parallel operation of MOSFET. Which is suitable and why?
Last Answer : Series operation of MOSFET: To increase voltage handling capability MOSFETs are connected in series. When the MOSFETs are connected in series each MOSFET should turn on and turn off ... on and turn off time and transconductance. Each MOSFET should share current equally.
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534 views
1 answer
asked
Sep 15, 2017
by
anonymous

What is depletion type MOSFET?..........
Last Answer : Depletion MOSFET: Depletion MOSFET is a MOSFET in which the channel already exists. If we apply a voltage between drain and source then the drain current will flow even if the gate to source ... in figure. The drain current will be reduced as the gate to source voltage made more negative.
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188 views
1 answer
asked
Sep 15, 2017
by
anonymous

What is enhancement MOSFET?...............
Last Answer : Enhancement MOSFET: There are two types of MOSFET one is enhancement MOSFET and second is depletion MOSFET. In enhancement MOSFET channel is created by applying threshold voltage between gate and source ... mode. The enhancement MOSFET will not conduct if the gate to source voltage is zero.
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175 views
1 answer
asked
Sep 15, 2017
by
anonymous

Last Answer : No, MOSFET is not the curent controlled device. The current between drain and source which is drain current is controlled by applying a voltage between gate and source hence MOSFET is a voltage controlled device.
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201 views
1 answer
asked
Sep 10, 2017
by
anonymous

Last Answer : already answered here is mosfet current controlled device?
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172 views
1 answer
asked
Sep 10, 2017
by
anonymous

Last Answer : In cut-off region of BJT both the emitter-base junction and collector-base junction are reverse biased.
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94 views
2 answers
asked
Sep 27, 2017
by
anonymous

operating principle of PUT.
Last Answer : Constructional diagram & Operating principle of PUT: The PUT is a PNPN device similar to SCR, but its operation is similar to the UJT. The PUT behave like a UJT whose trigger voltage VP can be set ... low resistance and VAK ≈ 1V). The PUT is also referred to as a complementary SCR (CSCR).
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105 views
1 answer
asked
Oct 13, 2019
by
anonymous

In a 230 V, 50 Hz single-phase SCR bridge converter operating at a firing delay angle, α and with large R-L load, the input source current is (A) sinusoidal current (B) constant dc current (C) continuous rectangular pulses (D) alternating rectangular pulses
Last Answer : In a 230 V, 50 Hz single-phase SCR bridge converter operating at a firing delay angle, α and with large R-L load, the input source current is alternating rectangular pulses
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177 views
1 answer
asked
Apr 28, 2018
by
anonymous

Two synchronous generators operating in parallel supply a common load of 2.5 MW. The frequency-power characteristics have a common slope of 1 MW/Hz and the no-load frequencies of the generators are 51.5 Hz and 51.0 Hz, ... system frequency is (A) 50 Hz (B) 51 Hz (C) 51.25 Hz (D) 51.5 Hz
Last Answer : Two synchronous generators operating in parallel supply a common load of 2.5 MW. The frequency-power characteristics have a common slope of 1 MW/Hz and the no-load frequencies of the generators are 51.5 Hz and 51.0 Hz, respectively. Then the system frequency is 50 Hz
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114 views
1 answer
asked
Apr 28, 2018
by
anonymous

What is the value of Beta in power BJT?
Last Answer : The beta value in power BJT is 5 to 10.
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105 views
1 answer
asked
Sep 20, 2017
by
anonymous

The device which allows reverse power flow and withstands highest switch frequency is (A) GTO (B) MOSFET (C) IGBT (D) Inverter grade SCR
Last Answer : The device which allows reverse power flow and withstands highest switch frequency is MOSFET
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89 views
1 answer
asked
Apr 28, 2018
by
anonymous
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A certain power MOSFET has a maximum junction temperature specification of 1500o C, a junction-to-case thermal resistance of 1.00 C/W, and a junction-to ambient thermal resistance of 600 C/W. If the ambient temperature is 300o C ... the device will be A) 1.52 W B) 1.72 W C) 1.92W D) 2.00 W
Last Answer : A certain power MOSFET has a maximum junction temperature specification of 1500o C, a junction-to-case thermal resistance of 1.00 C/W, and a junction-to ambient thermal resistance of ... 300o C, then the maximum allowable power dissipation in the device will be 2.00 W
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148 views
1 answer
asked
Jun 18, 2018
by
anonymous
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Last Answer : MOSFET have high current losses due to High on state resistance. Hence MOSFET is used for low power applications.
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113 views
1 answer
asked
Sep 22, 2017
by
anonymous

An FET is a better chopper than a BJT because it has (A) lower offset voltage (B) higher series ON resistance (C) lower input current (D) higher input impedance
Last Answer : An FET is a better chopper than a BJT because it has lower offset voltage
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676 views
1 answer
asked
Apr 26, 2018
by
anonymous

State 2 advantages of JFET over BJT.
Last Answer : Advantages of JFET over BJT: 1) High input impedance 2) Better thermal stability 3) Produce less noise 4) Smaller than BJT 5) Rugged in construction and simpler to fabricate 6) High degree of isolation between Input and Output.
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235 views
1 answer
asked
Jun 24, 2020
by
anonymous

List specification of BJT.
Last Answer : * The bipolar junction transistor (BJT) has small signal current gain, α (hfb). * Maximum collector current Ic (max). * Maximum collector to emitter voltage, VCE (max). * Collector to emitter ... . * Collector to emitter cut off voltage, VCEO. * Base emitter saturation voltage, VBE (sat).
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109 views
1 answer
asked
May 2, 2020
by
anonymous

State reason BJT is called as bipolar junction transistor.
Last Answer : BJT is called bipolar junction transistor because in BJT current conduction takes place due to majority as well as minority charge carriers.
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5.1k views
1 answer
asked
Jul 24, 2019
by
anonymous

List configurations of BJT.
Last Answer : Configurations of BJT : 1) Common Base (CB) configuration 2) Common Emitter (CE) configuration 3) Common Collector (CC) configuration
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65 views
1 answer
asked
Jul 10, 2019
by
anonymous

State the need of biasing of BJT.
Last Answer : Need of biasing: The basic need of transistor biasing is to keep the base-emitter (B-E) junction properly forward biased and the collector-emitter (C-E) junction properly reverse biased ... transistor biasing is necessary for normal and proper operation of transistor to be used for amplification.
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262 views
2 answers
asked
Sep 5, 2018
by
anonymous

Draw circuit diagram of voltage divider biasing list two advantages of voltage divider biasing of BJT.
Last Answer : Two advantages of voltage divider biasing of BJT. 1. It is very simple method of transistor biasing. 2. The biasing conditions can be very easily set. 3. there is no loading of ... 5. The resistor RE introduces a negative feedback. So all the advantages of negative feedback are obtained.
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778 views
1 answer
asked
Sep 5, 2018
by
anonymous

Compare BJT with FET
Last Answer : FET BJT It is unipolar device i.e. current in the device is carried either by electrons or holes It is bipolar device i.e. current in the device is carried either by ... from minority- carrier storage effects & therefore has lower switching speeds & cut-off frequencies.
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69 views
1 answer
asked
Sep 5, 2018
by
anonymous

Compare between BJT and FET on the basis of (i) Biolar/Unipolar (ii) Tharmal Runaway (iii) Noise (iv) Applications
Last Answer : Parameter BJT FET Bipolar/Unipolar It is bipolar device i.e. current in this device is carried by electrons and holes. It is unipolar device i.e. current ... in oscilloscopes, electronic voltmeters and other measuring and testing equipment because of their high input impedance.
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757 views
1 answer
asked
Sep 5, 2018
by
anonymous

If the base current of a BJT is 250 µA and emitter current is 15 mA, then the common base current gain will be A) 0.98 B) 0.41 C) 59 D) 55
Last Answer : If the base current of a BJT is 250 µA and emitter current is 15 mA, then the common base current gain will be 0.98
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190 views
1 answer
asked
Jun 18, 2018
by
anonymous
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What is the difference between BJT and FET?
Last Answer : BJT is a current opperated transistor while FET is a field opperated transistor.
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2.7k views
1 answer
asked
Mar 19, 2018
by
anonymous
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What is a BJT amplifier?
Last Answer : Bilpolar Juntion transistor , this fuction is control the current
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100 views
1 answer
asked
Mar 19, 2018
by
anonymous
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How can BJT be used as an amplifier?
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86 views
0 answers
asked
Mar 19, 2018
by
anonymous

What is a BJT?
Last Answer : Bipolar Junction Transistor (BJT): BJT is a Bipolar device. (Uses both electrons and holes charge carrier for current conduction) Two Junctions (Emitter junction & collector ... mode (Current amplification) Cutoff mode (Open switch) Saturation mode (Close switch)
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741 views
2 answers
asked
Mar 10, 2018
by
anonymous

Last Answer : Yes BJT have internal capacitances.
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88 views
1 answer
asked
Sep 27, 2017
by
anonymous
